Hetero-structure FETs: Modeling, Characterization and Analysis Introduction

Mehdi AnwarUniversity of Connecticut

Material Properties: HeterojunctionMaterial/Device Fundamentals

Band StructureBasis FETs

Introduction to HEMTsCharge ControlTransport

Parameter Extraction & Circuit RepresentationPerformance Analysis

NoisePower

Advanced HFETs/HEMTsAdvanced ConceptsConclusion

Reading Assignments: Band StructureC. G. Van de Walle, “Band lineups and deformation potentials in model-solid theory,” PRB 39, p. 1871, 15 January 1989-IIS. L. Chuang and C. S. Chang, “k.p method for strained wurzite semiconductors,” PRB 54, p. 2491, 15 July 1996-IISemiconductors – Basic Data; Otfried Madelung(Ed.); 2nd Revised Edition, Springer

C. T. Sah and H. C. Pao, “The effects of fixed bulk charge on the characteristics of metal oxide semiconductor transistors,” IEEE TED-13, p. 393, 1966J. R. Brews, “A charge sheet model of the MOSFET,” Solid-State Electron., Vol. 21, p. 345, 1978Any standard text on Semiconductor Devices

Reading Assignments: Basic FETs

P. M. Solomon and H. Morkoc, “Modulation doped GaAs/AlGaAs heterojunction field-effect transistors (MODFET’s), ultrahigh speed device for supercomputers,” IEEE TED-31, p. 1015, 1984D. Delagebeaudeuf and N. T. Linh, “Metal-(n) AlGaAs-GaAs two dimensional electron Gas FET,” IEEE TED-29, p. 955, 1982T. J. Drummond, H. Morkoc, K. Lee and M. Shur, “Model for modulation doped field effect transistor,” IEEE EDL-3, p. 338, 1982A. F. M. Anwar and A. N. Khondker, "An envelope function description of double-heterojunction quantum wells," Jour. Appl. Phys., vol. 62, No. 10, pp. 4200-4203, 15th November 1987.A. N. Khondker and A. F. M. Anwar, "Analytical model for AlGaAs/GaAs heterojunction quantum wells," Solid-State Electronics, vol. 30, pp. 847-852, August 1987.C. Z. Cil and S. Tansal, “A new model for modulation doped FETs,” IEEE EDL-6, p. 434, 1985C-S Chang and H. R. Fetterman, “An analytical model for HEMT’s using new velocity-field dependence,”IEEE TED-34, p. 1456, 1987A. N. Khondker and A. F. M. Anwar," Approximate current-voltage models for MODFETs", IEEE Trans. Elect. Dev., vol. 37, No. 1, pp. 314-317, Jan. 1990.A. F. M. Anwar, Shangli Wu and Richard T. Webster, “Temperature dependent transport parameters in short GaN structures,” phys. stat. sol. (b) 228, No. 2, p. 575, November 2001.A. F. M. Anwar, Shangli Wu and Richard T. Webster, “Temperature dependent transport parameters in short GaN structures,” phys. stat. sol. (b) 228, No. 2, p. 575, November 2001.

Reading Assignments: HEMTs

Benjamin D. Huebschman, Pankaj B. Shah and Romeo Del Rosario, “Theory and operation of Cold Field Effect Transistor External Parasitic Parameter Extraction,” ARL Report, May 2009.J. Michael Golio, Monte G. Miller, George G. Maracas and David A. Johnson, “Frequency dependent electrical characteristics of GaAsMESFET’s,” IEEE ED-37, No. 5, p. 1217, 1990.

Reading Assignments: Parameter Extraction

Syed S. Islam and A.F.M. Anwar, “SPICE model of AlGaN/GaN HEMTs and simulation of VCO and power amplifier,”International Journal of High Speed Electronics and Systems, Vol. 14, No. 3, pp. 853-859, 2004Elias W. Faraclas, Syed S. Islam and A. F. M. Anwar, “Growth Parameter Dependence of Gain Compression in AlGaN/GaN HFETs,” Solid-State Electronics, vol. 48, p. 1849, 2004.Syed S. Islam, A. F. M. Anwar and Richard T. Webster, “A Physics Based Frequency Dispersion Model of GaN MESFETs,”IEEE TED, vol. 51, p. 846, June 2004.Syed S. Islam and A. F. M. Anwar, “Self-heating and trapping effects on the RF performance of GaN MESFETs,” IEEE MTT, vol. 52, No. 4, pp. 1229-1236, 2004. Arif Ahmed, Syed S. Islam and A. F. M. Anwar, “Frequency and temperature dependence of gain compression in GaN/AlGaNHEMT amplifiers,” Solid-State Electronics, vol. 47, No. 2, p. 339, February 2003. Syed S. Islam and A. F. M. Anwar, “Nonlinear analysis of GaN MESFETs with Volterra series using large-signal models including trapping effects,” IEEE Trans. Microwave Theory and Tech., vol. 50, no. 11, p. 2474, November 2002.Syed S. Islam and A. F. M. Anwar, “High Frequency GaN/AlGaN HEMT Class-E Power Amplifier,” Solid-State Electronics, vol. 46, p. 1621, October 2002A. F. M. Anwar and Syed S. Islam, “Frequency Dependence of GaN/AlGaN HEMT Amplifier Using Time Domain Analysis,”Solid-State Electronics, vol. 46, p. 1507, October 2002.Syed S. Islam and A, F. M. Anwar, “Temperature dependent nonlinearities in GaN/AlGaN HEMTs,” IEEE Trans. Electron. Dev., vol. 49, no. 5, p. 710, May 2002.Arif Ahmed, Syed S. Islam and A. F. M. Anwar, “A temperature-dependent nonlinear analysis of GaN/AlGaN HEMTs using Volterra series,” IEEE Trans. Microwave Theory and Tech., vol. 49, no. 9, p. 1518, September 2001.A. F. M. Anwar, Shangli Wu and Richard T. Webster, “Temperature dependent transport properties in GaN, AlxGa1-xN, and InxGa1-xN semiconductors,” IEEE Trans. Electron Dev., March 2001.

Reading Assignments: Power and Noise

Richard T. Webster and A. F. M. Anwar, “Noise in Metamorphic AlGaAsSb/InGaAs/AlGAAsSb HEMTs,” Solid-State Electronics, vol. 48, p. 2007, 2004.Kuo-Wei Liu and A. F. M. Anwar, “A self-consistent model for small-signal parameters and noise performance of InAlAs/InGaAs/InAlAs/InP HEMTs,” Solid-State Electronics, vol. 47, pp. 763-768, 2003.M. M. Jahan, K.-W. Liu and A. F. M. Anwar, "Bias Dependence of high frequency noise in heterojunction bipolar transistors," IEEE Trans. Microwave Theory and Tech., vol. 51, p. 677, March 2003. Richard T. Webster, Shangli Wu and A. F. M. Anwar, “Impact ionization in InAlAs/InGaAs/InAlAs HEMTs,” IEEE Electron Dev. Lett., vol. 21, no. 5, p. 193, May 2000.216, 1999. A. F. M. Anwar, K. W. Liu and V. P. Kesan," Noise performance of SiGe/Si MODFETs", IEEE Trans. Elect. Dev., ED-42, p. 1841-1846, Oct. 1995.M. M. Jahan and A. F. M. Anwar, "Shot noise in double barrier quantum structures," Solid-State Electronics, vol. 38, pp. 429-432, February 1995.K.-W. Liu and A. F. M. Anwar," Noise modeling for high electron mobility transistors," IEEE Trans. Electron Dev., vol. 41, no. 11, pp. 2087-2092, 1994.A. F. M. Anwar and K.-W. Liu, "Noise temperature modeling of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs," Solid-State Electronics, vol. 37, no. 9, p. 1585-1588, 1994.K.-W. Liu and A. F. M. Anwar, "An analytical model of current-voltage and dc, small-signal parameters for Si/Si1-xGex FETs," Solid-State Electronics, vol. 37, no. 8, pp. 1570-1572, 1994.A. F. M. Anwar, K. W. Liu and M. M. Jahan, “Noise in Si/Si1-xGex n-challen HEMTs and p-channel FETs,“ Simulation of Semiconductor Devices and Processes Vol. 5, Ed. S. Selberherr, H. Stippel, E. Strasser, pp. 273-276, September 1993.

Reading Assignments: Power and Noise

A. F. M. Anwar, Richard T. Webster and Kurt V. Smith, “Bias induced strain in AlGaN/GaN heterojunction field effect transistors and its implication,” Applied Physics Letters, vol. 88, pp. 203510-1 – 203510-3, May 15, 2006.Elias W. Faraclas and A. F. M. Anwar, “AlGaN/GaN HEMTs: Experiment and simulation of DC characteristics,” Solid-State Electronics, vol. 50, pp. 1051-1056, May/June 2006.Richard T. Webster and A. F. M. Anwar, “Noise in Metamorphic AlGaAsSb/InGaAs/AlGAAsSb HEMTs,” Solid-State Electronics, vol. 48, p. 2007, 2004.A.F.M. Anwar and Richard T. Webster, “ On the possible effects of AlGaAsSbgrowth parameters on the 2DEG concentration in AlGaAsSb/InGaAs/AlGaAsSbQW’s,” IEEE Trans. Electron Dev., vol. 45, No. 6, pp. 1170-1175, 1998 A. F. M. Anwar and Richard Webster, “An envelope function description of the quantum well form in AlGaAsSb/InAs/AlGaAsSb heterostructures,” J. Appl. Phys., vol. 80, pp. 6827-6830, December 1996.

Reading Assignments: Advanced HFETs

http://www.darpa.mil/mto/solicitations/baa11-09/index.htmlhttp://www.nsf.gov/pubs/2010/nsf10614/nsf10614.htmKen David, “Silicon Nanotechnology,” February 2004Victor V. Zhirnov and Ralph K. Cavin, “Negative capacitance to the rescue?,” Nature Nanotechnolgy, vol. 3, p. 77, February 2008

Reading Assignments: Advanced Concepts