p-channel 30 v, 24 mΩ typ., 6 a stripfet h6 power mosfet · vdd = 16 v, tj = 150 °c - 15 ns qrr...
TRANSCRIPT
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AM01475v4
D(5, 6, 7, 8)
G(4)
S(1, 2, 3)
FeaturesOrder code VDS RDS(on) max. ID PTOT
STL6P3LLH6 30 V 30 mΩ 6 A 2.9 W
• Very low on-resistance• Very low gate charge• High avalanche ruggedness• Low gate drive power loss
Applications• Switching applications
DescriptionThis device is a P-channel Power MOSFET developed using the STripFET H6technology with a new trench gate structure. The resulting Power MOSFET exhibitsvery low RDS(on) in all packages.
Product status link
STL6P3LLH6
Product summary
Order code STL6P3LLH6
Marking 6P3L
Package PowerFLAT3.3 x 3.3
Packing Tape and reel
Note: For the P-channel PowerMOSFETs the actual polarity of thevoltages and the current must be
reversed.
P-channel 30 V, 24 mΩ typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package
STL6P3LLH6
Datasheet
DS9257 - Rev 4 - March 2020For further information contact your local STMicroelectronics sales office.
www.st.com
https://www.st.com/en/product/STL6P3LLH6?ecmp=tt9470_gl_link_feb2019&rt=ds&id=DS9257
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1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage 30 V
VGS Gate-source voltage ±20 V
ID(1)Drain current (continuous) at TC = 25 °C 6 A
Drain current (continuous) at TC = 100 °C 3.8 A
IDM(1)(2) Drain current (pulsed) 24 A
PTOT Total power dissipation at TC = 25 °C 2.9 W
Tstg Storage temperature - 55 to 150 °C
TJ Max. operating junction temperature 150 °C
1. The value is rated according Rthj-pcb.
2. Pulse width limited by safe operating area.
Table 2. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 2.50 °C/W
Rthj-pcb(1) Thermal resistance junction-pcb, single operation 42.8 °C/W
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec.
Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.
STL6P3LLH6Electrical ratings
DS9257 - Rev 4 page 2/12
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2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 3. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 250 µA 30 V
IDSS Zero gate voltage drain currentVGS = 0 V, VDS = 30 V 1 µA
VGS = 0 V, VDS = 30 V, TC = 125 °C 10 µA
IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1 V
RDS(on) Static drain-source on-resistanceVGS = 10 V, ID = 3 A 24 30 mΩ
VGS = 4.5 V, ID = 3 A 38 50 mΩ
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VDS = 25 V, f = 1 MHz, VGS = 0 V
- 1450 - pF
Coss Output capacitance - 178 - pF
Crss Reverse transfer capacitance - 120 - pF
Qg Total gate charge VDD = 24 V, ID = 6 A, VGS = 4.5 V
(see Figure 12. Switching times testcircuit for resistive load)
- 12 - nC
Qgs Gate-source charge - 4.4 - nC
Qgd Gate-drain charge - 5 - nC
Table 5. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time
VDD = 24 V, ID = 3 A,
RG = 4.7 Ω, VGS = 10 V
- 15 - ns
tr Rise time - 15 - ns
td(off) Turn-off delay time - 24 - ns
tf Fall time - 21 - ns
Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.
STL6P3LLH6Electrical characteristics
DS9257 - Rev 4 page 3/12
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Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
VSD Forward on voltage ISD = 6 A, VGS = 0 V - 1.1 V
trr Reverse recovery timeISD = 6 A, di/dt = 100 A/µs
VDD = 16 V, TJ = 150 °C
- 15 ns
Qrr Reverse recovery charge - 6.5 nC
IRRM Reverse recovery current - 0.9 A
Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.
STL6P3LLH6Electrical characteristics
DS9257 - Rev 4 page 4/12
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2.1 Electrical characteristics (curves)
Figure 1. Safe operating area
ID
10
1
0.1
0.1 1 VDS(V)10
(A)
Opera
tion i
n this
area
is
Limite
d by m
ax RD
S(on)
10ms
1s100ms
0.01
Tj=150°CTc=25°CSingle pulse
GIPG171120141448MT
Figure 2. Thermal impedance
Single pulse
d=0.5
0.05
0.02
0.01
0.1
0.2
K
10 tp(s)-4 10 -3
10 -2
10 -1
10 -510 -3
10 -2 10 -1 10 0
case
10 1
GIPG171120141449MT
Figure 3. Output characteristics
ID
25
15
5
00 1 VDS(V)2
(A)
32V
3V
VGS=6, 7, 8, 9, 10V
10
20
30 4V
5V35
40
GIPG171120141450MT
Figure 4. Transfer characteristics
ID
30
20
10
00 4 VGS(V)7
(A)
2 6
5
15
25
35
VDS=2V
1 3 5
GIPG171120141451MT
Figure 5. Gate charge vs gate-source voltage
VGS
6
4
2
00 8 Qg(nC)
(V)
24
8
12 16
10
28
12
4 20
ID=6A
GIPG171120141452MT
Figure 6. Static drain-source on-resistance
RDS(on)
24.0
23.5
23.00 2 ID(A)
(mΩ)
1 3
24.5
VGS=10V
4 5 6
GIPG171120141453MT
STL6P3LLH6Electrical characteristics (curves)
DS9257 - Rev 4 page 5/12
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Figure 7. Capacitance variations
C
600
400
200
00 10 VDS(V)
(pF)
5 15
Ciss
CossCrss
20 25
800
1000
1200
1400
1600
GIPG171120141452MT
Figure 8. Normalized gate threshold voltage vstemperature
VGS(th)
1.0
0.8
0.6
0.4-50 0 TJ(°C)
(norm)
-25
1.2
7525 50 100
ID=250µA
-75 125 150
GIPG171120141455MT
Figure 9. Normalized on-resistance vs temperature
1.2
RDS(on)
TJ(°C)
(norm)
-50 0-25 7525 50 100-75 125 150
1.0
0.8
0.6
0.4
1.6
1.4
GIPG171120141456MT
ID=3A
Figure 10. Normalized VDS vs temperature
VDS
TJ(°C)
(norm)
0.94
0.96
0.98
1.00
1.02
1.04
1.06
ID=1mA1.08
-50 0-25 7525 50 100-75 125 150
GIPG171120141457MT
Figure 11. Source-drain diode forward characteristics
VSD
0 4 ISD(A)
(V)
2 60.4
0.5
0.6
0.7
TJ=-55°C
TJ=175°C
TJ=25°C
0.8
0.9
1.0
GIPG171120141458MT
STL6P3LLH6Electrical characteristics (curves)
DS9257 - Rev 4 page 6/12
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3 Test circuits
Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load switching and diode recovery times
STL6P3LLH6Test circuits
DS9257 - Rev 4 page 7/12
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4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.
4.1 PowerFLAT 3.3 x 3.3 type F mechanical data
Figure 15. PowerFLAT 3.3 x 3.3 type F drawing
BOTTOM VIEW
SIDE VIEW
TOP VIEW
8465286_Rev2
STL6P3LLH6Package information
DS9257 - Rev 4 page 8/12
https://www.st.com/ecopackhttp://www.st.com
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Table 7. PowerFLAT 3.3 x 3.3 type F mechanical data
Dim.mm
Min. Typ. Max.
A 0.70 0.80 0.90
b 0.25 0.30 0.39
c 0.14 0.15 0.20
D 3.10 3.30 3.50
D1 3.05 3.15 3.25
D2 2.15 2.25 2.35
e 0.55 0.65 0.75
E 3.10 3.30 3.50
E1 2.90 3.00 3.10
E2 1.60 1.70 1.80
H 0.25 0.40 0.55
K 0.65 0.75 0.85
L 0.30 0.45 0.60
L1 0.05 0.15 0.25
L2 0.15
J 8° 10° 12°
Figure 16. PowerFLAT 3.3 x 3.3 type F recommended footprint
8465286_Rev2_footprint
STL6P3LLH6PowerFLAT 3.3 x 3.3 type F mechanical data
DS9257 - Rev 4 page 9/12
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Revision history
Table 8. Document revision history
Date Revision Changes
04-Mar-2013 1 First release.
28-Nov-2013 2
• Modified: PTOT value, silhouette and not found in cover page• Modified: VGS and PTOT values in not found
• Modified: Rthj-pcb value and note (1) in Table 3: "Thermal data"• Modified: IGSS test conditions value• Modified: Qg in Table 5: "Dynamic"• Added: Table 9: "PowerFLAT™ 3.3 x 3.3 type F mechanical data", Figure 18:
"PowerFLAT™ 3.3 x 3.3 type F drawing" and Figure 19: "PowerFLAT™ 3.3 x 3.3 type Frecommended footprint".
• Minor text changes
26-Nov-2014 3
Updated Figure 1: "Internal schematic diagram".
Added Section 4.1: "PowerFLAT™ 3.3 x 3.3 type C package information" and Section 4.2:"PowerFLAT™ 3.3 x 3.3 type F package information".
Minor text changes.
09-Mar-2020 4Updated Section 4 Package information.
Minor text changes.
STL6P3LLH6
DS9257 - Rev 4 page 10/12
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Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1 PowerFLAT 3.3 x 3.3 type F mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
STL6P3LLH6Contents
DS9257 - Rev 4 page 11/12
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© 2020 STMicroelectronics – All rights reserved
STL6P3LLH6
DS9257 - Rev 4 page 12/12
http://www.st.com/trademarks
1 Electrical ratings2 Electrical characteristics2.1 Electrical characteristics (curves)
3 Test circuits4 Package information4.1 PowerFLAT 3.3 x 3.3 type F mechanical data
Revision history