onebat meeting november 17, 2005
DESCRIPTION
ONEBAT Meeting November 17, 2005. EPFL contribution Samuel Rey-Mermet, Paul Muralt. Outline. New design for PEN New photolithographic masks for PEN Process flow CGO dry etching Lift-off Ni plating Patent Main achievements Milestones Future work. New designs for PEN. - PowerPoint PPT PresentationTRANSCRIPT
17.11.05 ONEBAT MeetingNovember 17, 2005
EPFL contribution
Samuel Rey-Mermet, Paul Muralt
17.11.05Outline
- New design for PEN- New photolithographic masks for PEN- Process flow- CGO dry etching- Lift-off- Ni plating- Patent- Main achievements- Milestones- Future work
17.11.05 New designs for PEN
PATENT PENDING
Ni grid without current collector
Ni grid with current collector
17.11.05
New photolithographic masks6 Masks:
Current collector, electrolyte, seed layer, mould, anode and membrane.
Grid and current collector line width: 5 um
Hexagone side: 50 umHexagone diagonal: 100 um
Contact anode(4 x 6 mm2)
Contact cathode(6 x 4 mm2)
Membrane(diam.5 mm)
2.4
cm
Connecting linesfor eplating
Ni grid
Current collector
17.11.05 Process Flow
Current collectordeposition
Photo. Mask 1CC etch
Dry etch CC
Deposition ofelectrolyte
PATENT PENDING
17.11.05 Process Flow
Photo. Mask 2Electrolyte etch
Electrolyte dryetch
Photo. Mask 3Seed layer
Deposition seedlayer
PATENT PENDING
17.11.05 Process Flow
Lift-off seed layer
Photo. Mask 4Mould eplating
Grid eplating
Resist removal
PATENT PENDING
17.11.05 Process Flow
Depostion porousanode (anode etch ?)
Photo. Mask 6Si etch
Si backside etch
Depostion porouscathode
PATENT PENDING
17.11.05 Process Flow Summary
16 main steps: Wafer 1 is before step 13
Critical points:
Lift-off definition
Cr/Au must be replaced by Ni
Cathode & Anode deposition
(LC Ni-CGO ~Ok, NMW)
Si dry etch (first test ok)
Dicing (Laser?)
17.11.05 CGO dry etching
ECRPlasma
RF chuck
2.45 GHz
RF 13.56 MHzWater cooled
Effect of the working pressure and rf power (chuck) on the etching rate of PZT thin film, selectivity for 60 W.
0
20
40
60
80
100
0.0001 0.0010 0.0100 0.1000 1.0000
PRESSURE [Pa]
Etc
hin
g R
ate
[nm
/min
]
0
1
2
3
4
5
Sel
ecti
vity
PZ
T/P
R
100 W RF60 W RF40 W RFSelectivity PZT/PR
Vbeam
Vacc
Ar, CF4, CCl4
17.11.05 CGO dry etching
Etching rate for Vbeam/Vacc=2, at 5 x 10-4 mBar, with 16 sccm Ar, 2 sccm CCl4, 4 sccm CF4, 80 W RF bias power
17.11.05 Evaporation
1 m
Designed for lift-off
1.5 10-6 mBar after 1h.
Cr, Au, Ti, Al, Ni
17.11.05 Lift-off
Lift-off is improved
Remaining parts of the seed-layer, broken grids…
100 um
100 um
17.11.05Ni eplating
100 um
Pt CC 100 nm thick
CGO 150-200 nm thick
Ni grid 5 um thick
17.11.05 PatentA PCT patent application is being prepared and filed before
December 16.
Annoying: Patent on grid by semiconductor process (CVD) US 2005/0115889 (Liliput?) filed in 9/2003, 8 months after our invention.
Lucky: No conductive grid, no electrolytic deposition claimed
17.11.05 Main achievements
100 m
50 m
Ni grids
Ni grids with CGO
17.11.05Milestones
• WP 1.1 Electrolyte– Dense, crack free, CGO 80/20 OK
– Conductivity=0.5 S/m @500°C OK
– Microstructure charact. OK
– Electrical charac. of membrane not OK
– Stress measur. OK
• WP 1.2 Anode– Ni-CGO, 500 S/cm @ RT in air, ~OK
porosity?
– Thermal stability not tested, grid ok
– Stress measur. not tested, no problem
• WP 1.3 Cathode– LSCF tested by PLD, not OK
– Stress not tested,
– Stress measur. not tested,
17.11.05Milestones
• WP 1.4 Microfab. and electrical testing– PEN with contacts in progress (anode, cathode from NMW)– 1st PEN in progress (step 12 of 16)– Concept Ni grid OK– Redesign PEN and contact Mask OK, Process Flow in progress– Integration of Ni grid Improvement in progress
17.11.05Next
Fabrication of a PEN including Ni-grid and NMW electrodes wafer 1: status:step #12/16
13=anode dep (NMW), 14/15=Si-etch, 16=cathode dep (NMW)
wafers 2-3: with better seed layer lift off and better Ni-grid
Thermal stability testing of this 1st PEN.
Electrical testing of this 1st PEN.