njg1157pcd gps and glonass front-end module · gps and glonass front-end module ... the njg1157pcd...

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NJG1157PCD - 1 - Ver.2016-04-18 Pre-Filter RF OUT RF IN V DD V CTL LNA Post-Filter GPS and GLONASS Front-End Module GENERAL DESCRIPTION PACKAGE OUTLINE The NJG1157PCD is a front-end module (FEM) designed for GPS and GLONASS applications. This FEM offers high gain, low noise figure, high linearity and high out-band rejection characteristics brought by included high performance pre-SAW filter, low noise amplifier (LNA) and post-SAW filter. This FEM can operate from 1.5V to 3.3V single voltage in -40 to 105°C. This FEM has stand-by mode to save current consumption. This FEM offers very small mounting area by included two SAW filters, only two external components and very small HFFP10-CD package that is 2.5x2.5mm. FEATURES Available for GPS and GLONASS Low supply voltage 1.8/ 2.8V typ. Low current consumption 2.6/3.3mA typ. @V DD =1.8/ 2.8V, V CTL =1.8V 0.1μA typ. @V DD =1.8/ 2.8V, V CTL =0V (Stand-by mode) High gain 17.5/18.5dB typ. @V DD =1.8/ 2.8V, V CTL =1.8V, f=1575MHz, 1597 to 1606MHz Low noise figure 1.65/1.60dB typ. @V DD =1.8/ 2.8V, V CTL =1.8V, f=1575MHz 1.75/1.70dB typ. @V DD =1.8/ 2.8V, V CTL =1.8V, f=1597 to 1606MHz High out band rejection 85dBc typ. @f=704 to 915MHz, relative to 1575MHz 75dBc typ. @f=1710 to 1980MHz, relative to 1575MHz Small package size HFFP10-CD: 2.5mmx2.5mmx0.63mm max. RoHS compliant and Halogen Free, MSL1 PIN CONFIGURATION BLOCK DIAGRAM TRUTH TABLE “H”=V CTL (H), “L”=V CTL (L) VCTL Mode H Active mode L Stand-by mode Note: Specifications and description listed in this datasheet are subject to change without notice. (Top View) Pin connection 1. GND 2. VCTL 3. VDD 4. NC(GND) 5. PreIN 6. GND 7. PreOUT 8. LNAIN 9. NC(GND) 10. PostOUT Exposed pad: GND NJG1157PCD Pre-Filter LNA Post-Filter GND 3 2 4 VCTL 5 1 8 9 7 6 10 VDD NC(GND) PreIN PreOUT GND LNAIN NC (GND) PostOUT

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NJG1157PCD

- 1 - Ver.2016-04-18

Pre-FilterRF OUTRF IN

VDDVCTL

LNA

Post-Filter

GPS and GLONASS Front-End Module GENERAL DESCRIPTION PACKAGE OUTLINE

The NJG1157PCD is a front-end module (FEM) designed for GPS and GLONASS applications. This FEM offers high gain, low noise figure, high linearity and high out-band rejection characteristics brought by included high performance pre-SAW filter, low noise amplifier (LNA) and post-SAW filter. This FEM can operate from 1.5V to 3.3V single voltage in -40 to 105°C. This FEM has stand-by mode to save current consumption.

This FEM offers very small mounting area by included two SAW filters, only two external components and very small HFFP10-CD package that is 2.5x2.5mm.

FEATURES

Available for GPS and GLONASS

Low supply voltage 1.8/ 2.8V typ.

Low current consumption 2.6/3.3mA typ. @VDD=1.8/ 2.8V, VCTL=1.8V

0.1µA typ. @VDD=1.8/ 2.8V, VCTL=0V (Stand-by mode)

High gain 17.5/18.5dB typ. @VDD=1.8/ 2.8V, VCTL=1.8V,

f=1575MHz, 1597 to 1606MHz

Low noise figure 1.65/1.60dB typ. @VDD=1.8/ 2.8V, VCTL=1.8V, f=1575MHz

1.75/1.70dB typ. @VDD=1.8/ 2.8V, VCTL=1.8V, f=1597 to 1606MHz

High out band rejection 85dBc typ. @f=704 to 915MHz, relative to 1575MHz

75dBc typ. @f=1710 to 1980MHz, relative to 1575MHz

Small package size HFFP10-CD: 2.5mmx2.5mmx0.63mm max.

RoHS compliant and Halogen Free, MSL1 PIN CONFIGURATION BLOCK DIAGRAM

TRUTH TABLE

“H”=VCTL(H), “L”=VCTL(L)

VCTL Mode

H Active mode

L Stand-by mode

Note: Specifications and description listed in this datasheet are subject to change without notice.

(Top View)

Pin connection 1. GND 2. VCTL 3. VDD 4. NC(GND) 5. PreIN 6. GND 7. PreOUT 8. LNAIN 9. NC(GND) 10. PostOUT Exposed pad: GND

NJG1157PCD

Pre-Filter

LNA

Post-Filter

GND

3

2

4

VCTL

5

1

8

9

7

6

10

VDD

NC(GND)

PreIN

PreOUT

GND

LNAIN

NC (GND)

PostOUT

- 2 -

NJG1157PCD

ABSOLUTE MAXIMUM RATINGS

Ta=+25°C, Zs=Zl=50Ω

PARAMETERS SYMBOL CONDITIONS RATINGS UNITS

Supply voltage VDD 5.0 V

Control voltage VCTL 5.0 V

Input power

PIN (inband) VDD=2.8V,

f=1575, 1597 to 1606MHz +15 dBm

PIN (outband) VDD=2.8V, f=50 to 1460, 1710 to 4000MHz

+27 dBm

Power dissipation PD 4-layer FR4 PCB with through-hole (101.5x114.5mm), Tj=110°C

580 mW

Operating temperature Topr -40 to +105 °C

Storage temperature Tstg -40 to +110 °C

ELECTRICAL CHARACTERISTICS 1 (DC)

(General conditions: Ta=+25°C)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Supply Voltage VDD 1.5 - 3.3 V

Control Voltage (High) VCTL(H) 1.5 1.8 3.3 V

Control Voltage (Low) VCTL(L) 0 0 0.3 V

Supply Current 1 IDD1 RF OFF, VDD=2.8V, VCTL=1.8V

- 3.3 6.4 mA

Supply Current 2 IDD2 RF OFF, VDD=1.8V, VCTL=1.8V

- 2.6 5.9 mA

Supply Current 3 IDD3 RF OFF, VDD=2.8V, VCTL=0V

- 0.1 5.0 µA

Supply Current 4 IDD4 RF OFF, VDD=1.8V, VCTL=0V

- 0.1 5.0 µA

Control Current ICTL VCTL=1.8V - 5.0 15.0 µA

NJG1157PCD

- 3 -

ELECTRICAL CHARACTERISTICS 2 (RF)

General conditions: VDD=2.8V, VCTL=1.8V, fRF=1575MHz, 1597 to 1606MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Small Signal Gain (GPS)1

GainGPS1 f=1575MHz (GPS), Exclude PCB, Connector Losses (0.19dB)

17.0 18.5 - dB

Small Signal Gain (GLONASS)1

GainGLN1 f=1597 to 1606MHz (GLONASS) Exclude PCB, Connector Losses (0.19dB)

17.0 18.5 - dB

Noise Figure (GPS)1

NFGPS1 f=1575MHz (GPS) Exclude PCB, Connector Losses (0.09dB)

- 1.6 2.1 dB

Noise Figure (GLONASS)1

NFGLN1 f=1597 to 1606MHz (GLONASS) Exclude PCB, Connector Losses (0.09dB)

- 1.7 2.2 dB

Input Power at 1dB Gain Compression Point 1

P-1dB(IN)1 f=1575, 1597 to 1606MHz - -15.0 - dBm

Input 3rd Order Intercept Point 1

IIP3_1 f1=1575MHz, f2=f1+/- 1MHz, Pin=-30dBm

- -3.0 - dBm

Out of Band Input 2nd Order

Intercept Point 1 IIP2_OB1

f1=824.6MHz at +15dBm, f2=2400MHz at +15dBm, fmeas=1575.4MHz

- +72 - dBm

Out of Band Input 3rd Order

Intercept Point 1 IIP3_OB1

f1=1712.7MHz at +15dBm, f2=1850MHz at +15dBm, fmeas=1575.4MHz

- +50 - dBm

700MHz Harmonic1 2fo1

Input jammer tone: 787.76MHz at +15dBm Measure the harmonic tone at 1575.52MHz

- -30 - dBm

Out-of-Band Input Power 1dB Compression 1

P-1dB(IN) _OB1-1

fjam=900MHz, fmeas=1575MHz at Pin=-40dBm

- +24 - dBm

P-1dB(IN) _OB1-2

fjam=1710MHz, fmeas=1575MHz at Pin=-40dBm

- +24 - dBm

Low Band Rejection 1 BR_L1 f=704 to 915MHz, relative to 1575MHz

- 85 - dBc

High Band Rejection 1 BR_H1 f=1710 to 1980MHz, relative to 1575MHz

- 75 - dBc

WLAN Band Rejection 1 BR_W1 f=2400 to 2500MHz, relative to 1575MHz

- 72 - dBc

RF IN Return Loss (GPS)1

RLiGPS1 f=1575MHz (GPS) - 7.5 - dB

RF IN Return Loss (GLONASS)1

RLiGLN1 f=1597 to 1606MHz (GLONASS) - 7.5 - dB

RF OUT Return Loss (GPS)1

RLoGPS1 f=1575MHz (GPS) - 11 - dB

RF OUT Return Loss (GLONASS)1

RLoGLN1 f=1597 to 1606MHz (GLONASS) - 15 - dB

Group Delay Time Deviation 1

GDTD1 f=1597 to 1606MHz (GLONASS) - 8.0 - ns

- 4 -

NJG1157PCD

ELECTRICAL CHARACTERISTICS 3 (RF)

General conditions: VDD=1.8V, VCTL=1.8V, fRF=1575MHz, 1597 to 1606MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Small Signal Gain (GPS)2

GainGPS2 f=1575MHz (GPS) Exclude PCB, Connector Losses (0.19dB)

15.5 17.5 - dB

Small Signal Gain (GLONASS)2

GainGLN2 f=1597 to 1606MHz (GLONASS) Exclude PCB, Connector Losses (0.19dB)

15.5 17.5 - dB

Noise Figure (GPS)2

NFGPS2 f=1575MHz (GPS) Exclude PCB, Connector Losses (0.09dB)

- 1.65 2.20 dB

Noise Figure (GLONASS)2

NFGLN2 f=1597 to 1606MHz (GLONASS) Exclude PCB, Connector Losses (0.09dB)

- 1.75 2.35 dB

Input Power at 1dB Gain Compression Point 2

P-1dB(IN)2 f=1575, 1597 to 1606MHz - -17.0 - dBm

Input 3rd Order Intercept Point 2

IIP3_2 f1=1575MHz, f2=f1+/- 1MHz, Pin=-30dBm

- -6.0 - dBm

Out of Band Input 2nd Order

Intercept Point 2 IIP2_OB2

f1=824.6MHz at +15dBm, f2=2400MHz at +15dBm, fmeas=1575.4MHz

- +72 - dBm

Out of Band Input 3rd Order

Intercept Point 2 IIP3_OB2

f1=1712.7MHz at +15dBm, f2=1850MHz at +15dBm, fmeas=1575.4MHz

- +50 - dBm

700MHz Harmonic2 2fo2

Input jammer tone: 787.76MHz at +15dBm Measure the harmonic tone at 1575.52MHz

- -30 - dBm

Out-of-Band Input Power 1dB Compression 2

P-1dB(IN) _OB2-1

fjam=900MHz, fmeas=1575MHz at Pin=-40dBm

- +24 - dBm

P-1dB(IN) _OB2-2

fjam=1710MHz, fmeas=1575MHz at Pin=-40dBm

- +24 - dBm

Low Band Rejection 2 BR_L2 f=704 to 915MHz, relative to 1575MHz

- 85 - dBc

High Band Rejection 2 BR_H2 f=1710 to 1980MHz, relative to 1575MHz

- 75 - dBc

WLAN Band Rejection 2 BR_W2 f=2400 to 2500MHz, relative to 1575MHz

- 72 - dBc

RF IN Return Loss (GPS)2

RLiGPS2 f=1575MHz (GPS) - 7.5 - dB

RF IN Return Loss (GLONASS)2

RLiGLN2 f=1597 to 1606MHz (GLONASS) - 7.5 - dB

RF OUT Return Loss (GPS)2

RLoGPS2 f=1575MHz (GPS) - 10 - dB

RF OUT Return Loss (GLONASS)2

RLoGLN2 f=1597 to 1606MHz (GLONASS) - 13 - dB

Group Delay Time Deviation 2

GDTD2 f=1597 to 1606MHz (GLONASS) - 8.0 - ns

NJG1157PCD

- 5 -

TERMINAL INFORMATION

No. SYMBOL DESCRIPTION

1 GND Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance.

2 VCTL Control voltage terminal.

3 VDD Supply voltage terminal. Please connect bypass capacitor C1 with ground as close as possible.

4 NC(GND) No connected terminal. This terminal is not connected with internal circuit. Please connect to the PCB ground Plane.

5 PreIN RF input terminal. This terminal connects to input of pre-SAW filter.

6 GND Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance.

7 PreOUT Pre-SAW filter output terminal. This terminal connects to LNAIN with L1.

8 LNAIN RF input terminal. This terminal requires only a matching inductor L1, and does not require DC blocking capacitor because of integrated capacitor.

9 NC(GND) No connected terminal. This terminal is not connected with internal circuit. Please connect to the PCB ground Plane.

10 PostOUT RF output terminal. This terminal requires no DC blocking capacitor since this terminal has integrated SAW that also works as DC blocking capacitor in nature.

Exposed Pad

GND Ground terminal.

- 6 -

NJG1157PCD

ELECTRICAL CHARACTERISTICS

Conditions: VDD=2.8V, VCTL=1.8V, Ta=25°C, Zs=Zl=50Ω, with application circuit

S11, S22 S21, S12

VSWR Zin, Zout

NJG1157PCD

- 7 -

0

1

2

3

4

0

5

10

15

20

1.54 1.56 1.58 1.60 1.62 1.64

NF, Gain vs. frequency(VDD=2.8V, VCTL=1.8V)

Noise Figure (dB)

Gain (dB)

frequency (GHz)

Gain

NF

(NF, Gain: Exclude PCB, Connector Losses)

-25

-20

-15

-10

-5

0

5

10

2

3

4

5

6

7

8

9

-40 -30 -20 -10 0 10

Pout, IDD vs. Pin(VDD=2.8V, VCTL=1.8V, fRF=1575MHz)

Pout (dBm)

IDD (mA)

Pin (dBm)

IDD

P-1dB(IN)=-14.1dBm

P-1dB(OUT)=+3.4dBm

Pout

-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10

Pout, IM3 vs. Pin(VDD=2.8V, VCTL=1.8V, f1=1575MHz, f2=1576MHz)

Pout , IM3 (dBm)

Pin (dBm)

Pout

IM3

IIP3=-2.1dBm

OIP3=+15.7dBm

-80

-70

-60

-50

-40

-30

-20

-10

0

10

20

0.5 1.0 1.5 2.0 2.5 3.0

S21 (dB)

Frequency (GHz)

S21 vs. Frequency

(VDD=2.8V, V

CTL=1.8V)

ELECTRICAL CHARACTERISTICS

Conditions: VDD=2.8V, VCTL=1.8V, Ta=25°C, Zs=Zl=50Ω, with application circuit

0

10

20

30

40

50

1.54 1.56 1.58 1.60 1.62 1.64

Group Delay vs. frequency(VDD=2.8V, VCTL=1.8V)

Group Delay (ns)

frequency (GHz)

- 8 -

NJG1157PCD

-100

-80

-60

-40

-20

0

20

40

60

80

100

-40 -20 0 20 40 60 80

Out-of-band IIP2(V

DD=2.8V, V

CTL=1.8V, f

meas=1575.4MHz,

f1=824.6MHz, f2=2400MHz)

Pout , IM2 (dBm)

Pin (dBm)

Pout

IM2

IIP2_OB=+73.2dBm

6

8

10

12

14

16

18

20

22

-40 -30 -20 -10 0 10 20 30

Out-of-band P-1dB (fjam=1710MHz)(VDD=2.8V, VCTL=1.8V, f

meas=1575MHz at Pin=-40dBm)

Gain (dB)

Pin at 1710MHz (dBm)

Gain

P-1dB(IN)_OB > +24.0dBm

(Gain: Exclude PCB, Connector Losses)

6

8

10

12

14

16

18

20

22

-40 -30 -20 -10 0 10 20 30

Out-of-band P-1dB (fjam=900MHz)(VDD=2.8V, VCTL=1.8V, f

meas=1575MHz at Pin=-40dBm)

Gain (dB)

Pin at 900MHz (dBm)

Gain

P-1dB(IN)_OB > +24.0dBm(Gain: Exclude PCB, Connector Losses)

-120

-100

-80

-60

-40

-20

0

-30 -20 -10 0 10 20 30

2nd Harmonics(V

DD=2.8V, V

CTL=1.8V,

fin=787.76MHz, fmeas

=1575.52MHz)

2nd Harm

onics(dBm)

Pin(dBm)

2fo=-30.7dBm

-100

-80

-60

-40

-20

0

20

40

60

80

-40 -20 0 20 40 60

Out-of-band IIP3(VDD=2.8V, VCTL=1.8V, fmeas=1575.4MHz,

f1=1712.7MHz, f2=1850MHz)

Pout , IM3 (dBm)

Pin (dBm)

Pout

IM3

IIP3_OB=+57.8dBm

ELECTRICAL CHARACTERISTICS

Conditions: VDD=2.8V, VCTL=1.8V, Ta=25°C, Zs=Zl=50Ω, with application circuit

NJG1157PCD

- 9 -

ELECTRICAL CHARACTERISTICS

Conditions: VDD=1.8V, VCTL=1.8V, Ta=25°C, Zs=Zl=50Ω, with application circuit

S11, S22 S21, S12

VSWR Zin, Zout

- 10 -

NJG1157PCD

-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10

Pout, IM3 vs. Pin(VDD=1.8V, VCTL=1.8V, f1=1575MHz, f2=1576MHz)

Pout , IM3 (dBm)

Pin (dBm)

Pout

IM3

IIP3=-5.8dBm

OIP3=+11.5dBm

-25

-20

-15

-10

-5

0

5

10

2

3

4

5

6

7

8

9

-40 -30 -20 -10 0 10

Pout, IDD vs. Pin(VDD=1.8V, VCTL=1.8V, fRF=1575MHz)

Pout (dBm)

IDD (mA)

Pin (dBm)

IDD

P-1dB(IN)=-17.0dBm

P-1dB(OUT)=-0.7dBm

Pout

0

10

20

30

40

50

1.54 1.56 1.58 1.60 1.62 1.64

Group Delay vs. frequency(VDD=1.8V, VCTL=1.8V)

Group Delay (ns)

frequency (GHz)

0

1

2

3

4

0

5

10

15

20

1.54 1.56 1.58 1.60 1.62 1.64

NF, Gain vs. frequency(VDD=1.8V, VCTL=1.8V)

Noise Figure (dB)

Gain (dB)

frequency (GHz)

Gain

NF

(NF, Gain: Exclude PCB, Connector Losses)-80

-70

-60

-50

-40

-30

-20

-10

0

10

20

0.5 1.0 1.5 2.0 2.5 3.0

S21 (dB)

Frequency (GHz)

S21 vs. Frequency

(VDD=1.8V, V

CTL=1.8V)

ELECTRICAL CHARACTERISTICS

Conditions: VDD=1.8V, VCTL=1.8V, Ta=25°C, Zs=Zl=50Ω, with application circuit

NJG1157PCD

- 11 -

-100

-80

-60

-40

-20

0

20

40

60

80

100

-40 -20 0 20 40 60 80

Out-of-band IIP2(V

DD=1.8V, V

CTL=1.8V, f

meas=1575.4MHz,

f1=824.6MHz, f2=2400MHz)

Pout , IM2 (dBm)

Pin (dBm)

Pout

IM2

IIP2_OB=+72.1dBm

6

8

10

12

14

16

18

20

22

-40 -30 -20 -10 0 10 20 30

Out-of-band P-1dB (fjam=1710MHz)(VDD=1.8V, VCTL=1.8V, f

meas=1575MHz at Pin=-40dBm)

Gain (dB)

Pin at 1710MHz (dBm)

Gain

P-1dB(IN)_OB > +24.0dBm

(Gain: Exclude PCB, Connector Losses)

6

8

10

12

14

16

18

20

22

-40 -30 -20 -10 0 10 20 30

Out-of-band P-1dB (fjam=900MHz)(VDD=1.8V, VCTL=1.8V, f

meas=1575MHz at Pin=-40dBm)

Gain (dB)

Pin at 900MHz (dBm)

Gain

P-1dB(IN)_OB > +24.0dBm(Gain: Exclude PCB, Connector Losses)

-120

-100

-80

-60

-40

-20

0

-30 -20 -10 0 10 20 30

2nd Harmonics(V

DD=1.8V, V

CTL=1.8V,

fin=787.76MHz, fmeas

=1575.52MHz)

2nd Harm

onics(dBm)

Pin(dBm)

2fo=-30.3dBm

-100

-80

-60

-40

-20

0

20

40

60

80

-40 -20 0 20 40 60

Out-of-band IIP3(VDD=1.8V, VCTL=1.8V, fmeas=1575.4MHz,

f1=1712.7MHz, f2=1850MHz)

Pout , IM3 (dBm)

Pin (dBm)

Pout

IM3

IIP3_OB=+52.6dBm

ELECTRICAL CHARACTERISTICS

Conditions: VDD=1.8V, VCTL=1.8V, Ta=25°C, Zs=Zl=50Ω, with application circuit

- 12 -

NJG1157PCD

ELECTRICAL CHARACTERISTICS

Conditions: VDD=2.8V, VCTL=1.8V, Zs=Zl=50Ω, with application circuit

0

5

10

15

20

-60 -40 -20 0 20 40 60 80 100 120

Return Loss (dB)

Temperature (oC)

RLin

Return Loss vs. Temperature(VDD=2.8V, VCTL=1.8V, fRF=1575MHz)

RLout

50

60

70

80

90

100

-60 -40 -20 0 20 40 60 80 100 120

Rejection (dBc)

Temperature (oC)

1980MHz

Rejection vs. Temperature(VDD=2.8V, VCTL=1.8V)

915MHz

2500MHz

0

5

10

15

20

-60 -40 -20 0 20 40 60 80 100 120

Group Delay Tim

e Deviation (nsec)

Temperature (oC)

Group Delay Time Deviation

vs. Temperature(VDD=2.8V, VCTL=1.8V, fRF=1597~1606MHz)

0

1

2

3

4

5

6

7

0

0.2

0.4

0.6

0.8

1

1.2

1.4

-60 -40 -20 0 20 40 60 80 100 120

IDD (mA) @active m

ode

IDD (uA) @stand-by m

ode

Temperature (oC)

IDD(stand-by mode)

IDD vs. Temperature(VDD=2.8V, VCTL=1.8V/0V, RF OFF)

IDD(active mode)

10

12

14

16

18

20

22

24

0

0.5

1

1.5

2

2.5

3

3.5

-60 -40 -20 0 20 40 60 80 100 120

Gain (dB)

Noise Figure (dB)

Temperature (oC)

NF

Gain, NF vs. Temperature(VDD=2.8V, VCTL=1.8V, fRF=1575MHz)

Gain

(Gain, NF: Exclude PCB, Connector Losses)

0

1

2

3

4

5

0 5 10 15 20

k-factor

frequency(GHz)

k-factor vs. frequency

(VDD=2.8V, VCTL=1.8V)

-40 oC

-25 oC

0 oC

+25 oC

+50 oC

+85 oC

NJG1157PCD

- 13 -

ELECTRICAL CHARACTERISTICS

Conditions: VDD=2.8V, VCTL=1.8V, Zs=Zl=50Ω, with application circuit

-20

-18

-16

-14

-12

-10

-8

-60 -40 -20 0 20 40 60 80 100 120

P-1dB(IN) (dBm)

Temperature (oC)

P-1dB(IN)

P-1dB(IN) vs. Temperature(VDD=2.8V, VCTL=1.8V, fRF=1575MHz)

6

8

10

12

14

16

18

20

22

-8

-6

-4

-2

0

2

4

6

8

-60 -40 -20 0 20 40 60 80 100 120OIP3 (dBm)

IIP3 (dBm)

Temperature (oC)

IIP3

OIP3, IIP3 vs. Temperature(VDD=2.8V, VCTL=1.8V, f1=1575MHz, f2=1576MHz, Pin=-30dBm)

OIP3

30

40

50

60

70

80

-60 -40 -20 0 20 40 60 80 100 120

Out-of-band IIP2 (dBm)

Temperature (oC)

IIP2_OB

Out-of-band IIP2 vs. Temperature(VDD=2.8V, VCTL=1.8V, fmeas=1575.4MHz,

f1=824.6MHz at Pin=+15dBm, f2=2400MHz at Pin=+15dBm)

30

40

50

60

70

80

-60 -40 -20 0 20 40 60 80 100 120

Out-of-band IIP3 (dBm)

Temperature (oC)

IIP3_OB

Out-of-band IIP3 vs. Temperature(VDD=2.8V, VCTL=1.8V, fmeas=1575MHz,

f1=1713MHz at Pin=+15dBm, f2=1851MHz at Pin=+15dBm)

-50

-40

-30

-20

-10

0

-60 -40 -20 0 20 40 60 80 100 120

2nd Harm

onics (dBm)

Temperature (oC)

2fo

2nd Harmonics vs. Temperature(VDD=2.8V, VCTL=1.8V, fRF=787.76MHz)

- 14 -

NJG1157PCD

0

5

10

15

20

1 1.5 2 2.5 3 3.5 4

Group Delay Tim

e Deviation (nsec)

VDD (V)

Group Delay Time Deviation vs. VDD(V

DD=2.8V, V

CTL=1.8V, fRF=1597~1606MHz)

0

5

10

15

20

1 1.5 2 2.5 3 3.5 4

Return Loss (dB)

VDD (V)

RLin

Return Loss vs. VDD(VCTL=1.8V, fRF=1575MHz)

RLout

14

15

16

17

18

19

20

0

0.5

1

1.5

2

2.5

3

1 1.5 2 2.5 3 3.5 4

Gain (dB)

Noise Figure (dB)

VDD (V)

NF

Gain, NF vs. VDD(VCTL=1.8V, fRF=1575MHz)

Gain

(Gain, NF: Exclude PCB, Connector Losses)

0

1

2

3

4

5

6

0

0.1

0.2

0.3

0.4

0.5

0.6

1 1.5 2 2.5 3 3.5 4

IDD (mA) @active m

ode

IDD (uA) @stand-by m

ode

VDD (V)

IDD(stand-by mode)

IDD vs. VDD(VCTL=1.8V/0V, RF OFF)

IDD(active mode)

50

55

60

65

70

75

80

85

90

1 1.5 2 2.5 3 3.5 4

Rejection (dBc)

VDD (V)

Rejection vs. VDD(VCTL=1.8V)

1980MHz

915MHz

2500MHz

ELECTRICAL CHARACTERISTICS

Conditions: VCTL=1.8V, Ta=25°C, Zs=Zl=50Ω, with application circuit

NJG1157PCD

- 15 -

30

40

50

60

70

80

1 1.5 2 2.5 3 3.5 4

Out-of-band IIP3 (dBm)

VDD (V)

IIP3_OB

Out-of-band IIP3 vs. VDD(VCTL=1.8V, fmeas=1575MHz,

f1=1713MHz at Pin=-20dBm, f2=1851MHz at Pin=-20dBm)

30

40

50

60

70

80

1 1.5 2 2.5 3 3.5 4

Out-of-band IIP2 (dBm)

VDD (V)

IIP2_OB

Out-of-band IIP2 vs. VDD(VCTL=1.8V, fmeas=1575.4MHz,

f1=824.6MHz at Pin=+15dBm, f2=2400MHz at Pin=+15dBm)

4

6

8

10

12

14

16

18

20

-8

-6

-4

-2

0

2

4

6

8

1 1.5 2 2.5 3 3.5 4

OIP3 (dBm)

IIP3 (dBm)

VDD (V)

IIP3

OIP3, IIP3 vs. VDD(VCTL=1.8V, f1=1575MHz, f2=1576MHz, Pin=-30dBm)

OIP3

-22

-20

-18

-16

-14

-12

-10

-8

1 1.5 2 2.5 3 3.5 4

P-1dB(IN) (dBm)

VDD (V)

P-1dB(IN)

P-1dB(IN) vs. VDD(VCTL=1.8V, fRF=1575MHz)

-50

-40

-30

-20

-10

0

1 1.5 2 2.5 3 3.5 4

2nd Harm

onics (dBm)

VDD (V)

2fo

2nd Harmonics vs. VDD(VCTL=1.8V, fRF=787.76MHz)

ELECTRICAL CHARACTERISTICS

Conditions: VCTL=1.8V, Ta=25°C, Zs=Zl=50Ω, with application circuit

- 16 -

NJG1157PCD

APPLICATION CIRCUIT

Parts ID Manufacture

L1 LQW15A Series (MURATA)

C1 GRM03 Series (MURATA)

Parts list

(Top View)

8.2nH

1000pF

RF OUT

RF IN

V DD

V CTL

L1

C1

GND

3

2

4

VCTL

5

1

8

9

7

6

10

VDD

NC(GND)

Pre/IN

Pre/OUT

GND

LNAIN

NC(GND)

Post/OUT

Pre-Filter

LNA

Post-Filter

NJG1157PCD

- 17 -

Evaluation board

<PCB LAYOUT GUIDELINE>

PRECAUTIONS • Please layout ground pattern under this FEM in order not to couple with RFIN and RFOUT terminal. • All external parts should be placed as close as possible to the FEM. • For good RF performance, all GND terminals must be connected to PCB ground plane of substrate, and via-holes for GND should be placed near the FEM.

PCB Substrate: FR-4 Thickness: 0.2mm

Microstrip line width: 0.4mm (Z0=50Ω) Size: 14.0mm x 14.0mm

RF IN

(Top View)

RF OUT

L1

C1

VCTL VDD

GND Via Hole

Diameter φ= 0.2mm, 0.4mm

PKG Terminal

PCB

PKG Outline

- 18 -

NJG1157PCD

RECOMMENDED FOOTPRINT PATTERN (HFFP10-CD PACKAGE) <Reference>

: Land

:Mask (Open area) *Metal mask thickness : 100µm :Resist(Open area)

Metal MASK Detail

PKG : 2.5mm x 2.5mm

NJG1157PCD

- 19 -

NOISE FIGURE MEASUREMENT BLOCK DIAGRAM

Calibration setup

Noise Source (Agilent 346A)

NF Analyzer (Agilent N8973A)

Input (50Ω) Noise Source Drive Output

* Preamplifier is used to improve NF

measurement accuracy.

* Noise source, preamplifier and NF

analyzer are connected directly.

Preamplifier NJG1145UA2

Gain 15dB NF 1.5dB

Measurement Setup

Noise Source (Agilent 346A)

DUT

NF Analyzer (Agilent N8973A)

Input (50Ω) Noise Source Drive Output

IN OUT

* Noise source, DUT, preamplifier

and NF analyzer are connected

directly.

Preamplifier NJG1145UA2

Gain 15dB NF 1.5dB

Measuring instruments

NF Analyzer : Agilent N8973A

Noise Source : Agilent 346A

Setting the NF analyzer

Measurement mode form

Device under test : Amplifier

System downconverter : off

Mode setup form

Sideband : LSB

Averages : 16

Average mode : Point

Bandwidth : 4MHz

Loss comp : off

Tcold : setting the temperature of noise source (303.15K)

- 20 -

NJG1157PCD

PACKAGE OUTLINE (HFFP10-CD)

Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material.

• Do NOT eat or put into mouth.

• Do NOT dispose in fire or break up this product.

• Do NOT chemically make gas or powder with this product.

• To waste this product, please obey the relating law of your country.

This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages.

[CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial

rights.

This product is hollow seal package type, and it is with the structure susceptible to stress from the outside. Therefore, note the following in relation to the contents, after conducting an evaluation, please use. 1. After mounting this product, to implement the potting and transfer molding, please the confirmation of resistance to temperature changes and shrinkage stress involved in the molding. 2. When mounted on the product, collet diameter please use more than 1mmφ. In addition, the value of static load is recommended mounting less than 5N. 3. For dynamic load at the time of mounting, please use it after confirming in consideration of the contact area / speed / load.

Package Size :2.5±0.1mm 0.63mm max.

Electrode Dimensions clearance : ±0.05mm

Unit : mm Substrate : Ceramic Terminal treat : Au Lid : SnAg/Kovar/Ni Weight (typ.) : 18.00mg

TOP VIEW

SIDE VIEW

BOTTOM VIEW

Exposed PAD Ground connection is required.