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P-Channel Enhancement Mode Power MOSFET

Description The PE3115 uses advanced trench technology to provide

excellent RDS(ON)

General Features VDS = -30V,ID = -5.5A

RDS(ON) < 31mΩ @ VGS=-4.5V RDS(ON) < 27mΩ @ VGS=-10V

High power and current handing capability

Lead free product is acquired

Surface mount package

Application PWM applications

Load switch

Power management

D

G

S

Schematic diagram

Marking and Pin Assignment

SOT-23-3L

Absolute Maximum Ratings (TA=25

Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V

Gate-Source Voltage VGS ±12 V

Drain Current-Continuous ID -5.5 A

Drain Current-Pulsed (Note 1) IDM -30 A

Maximum Power Dissipation PD 1.5 W

Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150

Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 100 /W

Electrical Characteristics (TA=25unless otherwise noted)

Parameter Symbol Condition Min Typ Max Unit Off Characteristics

Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 - V

Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V - - -1 μA

PE3115

unless otherwise noted)

www.semi-one.com 2017 Dec. V1.1

3115

is suitable for use as a voltage. This device

applications.

-

, low gate charge and to operate at low gate

load switch or in

PWM

RDS(ON) < 42mΩ @ VGS=-2.5V

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Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V - - ±100 nA

On Characteristics (Note 3)

Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -0.7 -1 -1.3 V

VGS=-10V, ID=-4.2A - 22 27 mΩ

VGS=-4.5V, ID=-4A - 25 31 mΩDrain-Source On-State Resistance RDS(ON)

Forward Transconductance gFS VDS=-5V,ID=-4.2A - 10 - S

Dynamic Characteristics (Note4)

Input Capacitance Clss - 1610 - PF

Output Capacitance Coss - 207 - PF

Reverse Transfer Capacitance Crss

VDS=-15V,VGS=0V,

F=1.0MHz - 135 - PF

Switching Characteristics (Note 4)

Turn-on Delay Time td(on) - 12.6 - nS

Turn-on Rise Time tr - 5.2 - nS

Turn-Off Delay Time td(off) - 54 - nS

Turn-Off Fall Time tf

VDD=-15V,ID=-3.2A

VGS=-10V,RGEN=6Ω

- 21.4 - nS

Total Gate Charge Qg - 9.5 - nC

Gate-Source Charge Qgs - 2 - nC

Gate-Drain Charge Qgd

VDS=-15V,ID=-4A,VGS=-4.5V

- 3 - nC

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1A - - -1.2 V

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production

PE3115

www.semi-one.com

VGS=-2.5V, ID=-1A - 32 42 mΩ

2017 Dec. V1.1

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Typical Electrical and Thermal Characteristics

Figure 1:Switching Test Circuit

TJ-Junction Temperature() Figure 3 Power Dissipation

Vds Drain-Source Voltage (V) Figure 5 Output Characteristics

VIN

VOUT

10%

10%

50% 50%

PULSE WIDTH

INVERTED

td(on)

90%

tr

ton

90%

10%

toff

td(off)tf

90%

VIN

VOUT

10%

10%

50% 50%

PULSE WIDTH

INVERTED

td(on)

90%90%

tr

ton

90%

10%

toff

td(off)tf

90%

Figure 2:Switching Waveforms

TJ-Junction Temperature() Figure 4 Drain Current

ID- Drain Current (A) Figure 6 Drain-Source On-Resistance

PD

P

ower

(W)

I D- D

rain

Cur

rent

(A）

R

dson

On-

Res

ista

nce(

mΩ

)

I D- D

rain

Cur

rent

(A)

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PE3115

2017 Dec. V1.1

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Vgs Gate-Source Voltage (V)

Figure 7 Transfer Characteristics

Vgs Gate-Source Voltage (V) Figure 9 Rdson vs Vgs

Qg Gate Charge (nC) Figure 11 Gate Charge

TJ-Junction Temperature() Figure 8 Drain-Source On-Resistance

Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds

Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward

I D- D

rain

Cur

rent

(A)

Rds

on O

n-R

esis

tanc

e(mΩ

) V

gs G

ate-

Sou

rce

Volta

ge (V

)

Nor

mal

ized

On-

Res

ista

nce

C C

apac

itanc

e (p

F)

I s- R

ever

se D

rain

Cur

rent

(A)

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PE3115

2017 Dec. V1.1

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Vds Drain-Source Voltage (V) Figure 13 Safe Operation Area

Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance

r(t),

Nor

mal

ized

Effe

ctiv

e Tr

ansi

ent T

herm

al Im

peda

nce

I D- D

rain

Cur

rent

(A)

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2

2

357

0.1

2

357

1.0

0.010.01 0.15 72 3 2 1.05 73 2 105 73 32 5

Operation in thisarea is limited by RDS(on).

PW≤10μs100μs

100msDC operation

10ms

1ms

2357

3

2

57

10

100

IDM =-30A

ID=-5.5A

Ta=25°CSingle pulseWhen mounted on ceramic substrate(900mm20.8mm) 1unit

PE3115

2017 Dec. V1.1

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SOT-23-3L PACKAGE INFORMATION

Min Max Min MaxA 1.050 1.250 0.041 0.049A1 0.000 0.100 0.000 0.004A2 1.050 1.150 0.041 0.045b 0.300 0.500 0.012 0.020c 0.100 0.200 0.004 0.008D 2.820 3.020 0.111 0.119E 1.500 1.700 0.059 0.067E1 2.650 2.950 0.104 0.116ee1 1.800 2.000 0.071 0.079L 0.300 0.600 0.012 0.024θ 0° 8° 0° 8°

SymbolDimensions In Millimeters Dimensions In Inches

0.950(BSC) 0.037(BSC)

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PE3115

2017 Dec. V1.1