n plastic-encapsulate transistors
TRANSCRIPT
MCCSEMI.COMRev.3-3-12012020 1/4
BCP76
NPNPlastic-Encapsulate
Transistors
Features
• Halogen Free. “Green” Device (Note 1)• Moisture Sensitivity Level 1• Epoxy Meets UL 94 V-0 Flammability Rating
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)
Collector-Base Voltage VCBO 100 V
Maximum Ratings @ 25°C Unless Otherwise Specified
• Operating Junction Temperature Range: -55℃ to +150℃• Storage Temperature Range: -55℃ to +150℃• Thermal Resistance: 83.3℃/W Junction to Ambient
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 80 VEmitter-Base Voltage VEBO 5 V
1.5 WPower Dissipation PD
Collector Current IC 3 A
Internal Structure
1.BASE2,4.COLLECTOR3.EMITTER
2,4
3
1
SOT-223A
D
GH
B C
F
E
MIN MAX MIN MAXA 0.248 0.264 6.30 6.70B 0.130 0.146 3.30 3.70C 0.264 0.287 6.70 7.30D 0.001 0.004 0.02 0.10E 0.114 0.122 2.90 3.10FG --- 0.071 --- 1.80H 0.009 0.014 0.23 0.35J 0.030 --- 0.75 ---
DIMENSIONS
DIM INCHES MM NOTE
0.091 2.30
1 2 3
4
TYP.
J
K 0.026 0.033 0.66 0.84
K
0.75 2.30
3.40
7.75 4.55
1.60
6.15
(mm)
Suggested Solder Pad Layout
Note: 1. Halogen free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
MCCSEMI.COMRev.3-3-12012020 2/4
BCP76
Electrical Characteristics @ TA=25°C Unless Otherwise Specified
Collector-Base Cutoff Current
VCE=5V, IC=1A, f=100MHzTransition Frequency fT 10 MHzVCE=2V, IC=500mABase-Emitter Voltage VBE 1 VIC=500mA, IB=50mACollector-Emitter Saturation Voltage VCE(sat) 0.5 V
VCE=2V, IC=1AhFE3 25 VCE=2V, IC=3A
VCE=2V, IC=100mADC Current Gain
hFE1 25hFE2 40 160
ICBO 100 nA VCB=30V, IE=0Emitter-Base Breakdown Voltage V(BR)EBO 5 VCollector-Emitter Breakdown Voltage V(BR)CEO 80 V IC=10mA, IB=0Collector-Base Breakdown Voltage V(BR)CBO 100 V
Parameter Symbol Min Typ Max Units Conditions
IC=100µA, IE=0
IE=10µA, IC=0
MCCSEMI.COMRev.3-3-12012020 3/4
BCP76
Curve Characteristics
1 10 100010
100
1000Common EmitterVCE=2V
TA=100°C
DC
Cur
rent
Gai
n
100
Collector Current (mA)
Fig. 1 - DC Current Gain Characteristics
TA=25°C
3000 1 10 100 10001
10
100
1000
β=10
TA=100°C
Col
lect
or-E
mitt
er S
atur
atio
n Vo
ltage
(mV)
Collector Current (mA)
Fig. 2 - Collector-Emitter Saturation Voltage Characteristics
TA=25°C
1 10 100 1000200
400
600
800
1000
β=10
TA=100°C
Base
-Em
itter
Sat
urat
ion
Volta
ge (m
V)
Collector Current (mA)
Fig. 3 - Base-Emitter Saturation Voltage Characteristics
TA=25°C
1
10
100
1000
200 400 600 800 1000
Common EmitterVCE=2V
TA=100°C
TA=25°C
Base-Emitter Voltage (mV)
Col
lcet
or C
urre
nt (m
A)
Fig. 4 - Base-Emitter Voltage Characteristics
0 25 125 1500.0
0.5
1.0
1.5
2.0
Pow
er D
issi
patio
n (W
)
50 75 100
Ambient Temperature (°C)
Fig. 5 - Power Derating Curve
MCCSEMI.COMRev.3-3-12012020
Ordering Information
Device Packing
Part Number-TP Tape&Reel: 2.5Kpcs/Reel
4/4
BCP76
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