n-channel 650 v, 0.42 , 8.5 a powerflat™ 8x8 hv mdmesh™ v … · 2013-10-18 · november 2011...
TRANSCRIPT
November 2011 Doc ID 17450 Rev 2 1/17
17
STL12N65M5N-channel 650 V, 0.42 Ω, 8.5 A PowerFLAT™ 8x8 HV
MDmesh™ V Power MOSFET
Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications■ Switching applications
DescriptionThis device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Figure 1. Internal schematic diagram
Order codeVDSS @ TJmax
RDS(on) max
ID
STL12N65M5 710 V < 0.47 Ω 8.5 A (1)
1. The value is rated according to Rthj-case
Table 1. Device summary
Order code Marking Package Packaging
STL12N65M5 12N65M5 PowerFLAT™ 8x8 HV Tape and reel
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Contents STL12N65M5
2/17 Doc ID 17450 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
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STL12N65M5 Electrical ratings
Doc ID 17450 Rev 2 3/17
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 650 V
VGS Gate-source voltage ± 25 V
ID (1)
1. The value is rated according to Rthj-case
Drain current (continuous) at TC = 25 °C 8.5 A
ID (1) Drain current (continuous) at TC = 100 °C 5.4 A
IDM (1),(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 34 A
ID(3)
3. When mounted on FR-4 board of inch², 2oz Cu.
Drain current (continuous) at Tamb = 25 °C 1.8 A
ID(3) Drain current (continuous) at Tamb = 100 °C 1 A
IDM(2),(3) Drain current (pulsed) 7.2 A
PTOT (3) Total dissipation at Tamb = 25 °C 3 W
PTOT(1) Total dissipation at TC = 25 °C 70 W
IARAvalanche current, repetitive or not-repetitive (pulse width limited by Tj max)
2.5 A
EASSingle pulse avalanche energy(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
150 mJ
dv/dt (4)
4. ISD ≤ 8.5 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS, VDD = 400 V.
Peak diode recovery voltage slope 15 V/ns
Tstg Storage temperature - 55 to 150 °C
Tj Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 1.78 °C/W
Rthj-amb(1)
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
Thermal resistance junction-amb max 45 °C/W
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Electrical characteristics STL12N65M5
4/17 Doc ID 17450 Rev 2
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown voltage (VGS = 0)
ID = 1 mA 650 V
IDSSZero gate voltage drain current (VGS = 0)
VDS = 650 VVDS = 650 V, TC=125 °C
1100
µAµA
IGSSGate-body leakagecurrent (VDS = 0)
VGS = ± 25 V 100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V
RDS(on)Static drain-source on resistance
VGS = 10 V, ID = 4.3 A 0.42 0.47 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitanceOutput capacitance
Reverse transfer capacitance
VDS = 100 V, f = 1 MHz, VGS = 0
-90022
2
-pFpF
pF
Co(tr)(1)
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
Equivalent capacitance time related
VDS = 0 to 520 V, VGS = 0
- 64 - pF
Co(er)(2)
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS
Equivalent capacitance energy related
- 21 - pF
RGIntrinsic gate resistance
f = 1 MHz open drain - 2.5 - Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source chargeGate-drain charge
VDD = 520 V, ID = 4.25 A,
VGS = 10 V(see Figure 16)
-
20
4.88.3
-
nC
nCnC
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STL12N65M5 Electrical characteristics
Doc ID 17450 Rev 2 5/17
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max Unit
td(off)
trtctf
Turn-off delay time
Rise timeCross timeFall time
VDD = 400 V, ID = 5 A, RG = 4.7 Ω, VGS = 10 V(see Figure 17),(see Figure 20)
-
22.6
17.623.415.6
-
ns
nsnsns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)-
8.5
34
A
A
VSD (2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 8.5 A, VGS = 0 - 1.5 V
trrQrr
IRRM
Reverse recovery timeReverse recovery charge
Reverse recovery current
ISD = 8.5 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 17)-
2302.2
19
nsµC
A
trrQrr
IRRM
Reverse recovery time
Reverse recovery chargeReverse recovery current
ISD = 8.5 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C(see Figure 17)
-
280
2.719
ns
µCA
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Electrical characteristics STL12N65M5
6/17 Doc ID 17450 Rev 2
2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on resistance
ID
10
1
0.1
0.010.1 1 100 VDS(V)10
(A)
Opera
tion i
n this
area
is
Limite
d by m
ax R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°CSingle pulse
AM10355v1
10-5
10-4
10-3 10
-2tp(s)
10-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Single pulse
δ=0.5
Zth PowerFLAT 8x8 HV
ID
6
4
2
00 10 VDS(V)20
(A)
5 15 25
8
10
5V
6V
7V
VGS=10V
30
12
14
AM05575v1ID
6
4
2
00 4 VGS(V)8
(A)
2 6 10
8
10
12VDS= 20V
AM05576v1
VGS
6
4
2
00 5 Qg(nC)
(V)
20
8
10 15
10
VDD=520V
ID=4.25A12
300
200
100
0
400
500VDS
600AM05578v1
RDS(on)
0.42
0.41
0.40
0.390 1 ID(A)
(Ω)
6
0.43
0.44
0.45
0.46 VGS=10V
2 3 4 5 7 8
AM10356v1
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STL12N65M5 Electrical characteristics
Doc ID 17450 Rev 2 7/17
Figure 8. Capacitance variations Figure 9. Output capacitance stored energy
Figure 10. Normalized gate threshold voltage vs temperature
Figure 11. Normalized on resistance vs temperature
Figure 12. Source-drain diode forward characteristics
Figure 13. Normalized BVDSS vs temperature
C
1000
100
10
10.1 10 VDS(V)
(pF)
1 100
Ciss
Coss
Crss
AM05579v1Eoss
1.5
1.0
0.5
00 100 VDS(V)
(µJ)
400
2.0
200 300
2.5
3.0
500 600
3.5
4.0
AM05580v1
VGS(th)
1.00
0.90
0.80
0.70-50 0 TJ(°C)
(norm)
-25
1.10
7525 50 100
AM05581v1 RDS(on)
1.7
1.5
0.9
0.5-50 0 TJ(°C)
(norm)
-25 7525 50 100
0.7
1.1
1.3
1.9
2.1
125
ID= 4.25 A
VGS= 10 V
AM05501v2
VSD
0 20 ISD(A)
(V)
10 5030 400
0.2
0.4
0.6
0.8
1.0
1.2TJ=-50°C
TJ=150°C
TJ=25°C
AM05584v1 BVDSS
-50 0 TJ(°C)
(norm)
-25 7525 50 1000.93
0.95
0.97
0.99
1.01
1.03
1.05
1.07
AM05583v1
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Electrical characteristics STL12N65M5
8/17 Doc ID 17450 Rev 2
Figure 14. Switching losses vs gate resistance(1)
1. Eon including reverse recovery of a SiC diode
E
10
00 20 RG(Ω)
(μJ)
10 30
20
30
40
ID=5AVDD=400V
Eon
Eoff
40
50
60
AM05585v1
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STL12N65M5 Test circuits
Doc ID 17450 Rev 2 9/17
3 Test circuits
Figure 15. Switching times test circuit for resistive load
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load switching and diode recovery times
Figure 18. Unclamped inductive load test circuit
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF3.3μF
VDD
AM01469v1
VDD
47kΩ 1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200μF
PW
IG=CONST100Ω
100nF
D.U.T.
VG
AM01470v1
AD
D.U.T.
SB
G
25 Ω
A A
BB
RG
G
FASTDIODE
D
S
L=100μH
μF3.3 1000
μF VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200μF
3.3μF VDD
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
AM05540v2
Id
Vgs
Vds
90%Vds
10%Id
90%Vgs on
Tdelay-off
TfallTrise
Tcross -over
10%Vds
90%Id
Vgs(I(t))
on
-off
TfallTrise
-
))
Concept waveform for Inductive Load Turn-off
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Package mechanical data STL12N65M5
10/17 Doc ID 17450 Rev 2
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
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STL12N65M5 Package mechanical data
Doc ID 17450 Rev 2 11/17
Table 8. PowerFLAT™ 8x8 HV mechanical data
Dim.mm
Min. Typ. Max.
A 0.80 0.90 1.00
A1 0.00 0.02 0.05
b 0.95 1.00 1.05
D 8.00
E 8.00
D2 7.05 7.20 7.30
E2 4.15 4.30 4.40
e 2.00
L 0.40 0.50 0.60
aaa 0.10
bbb 0.10
ccc 0.10
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Package mechanical data STL12N65M5
12/17 Doc ID 17450 Rev 2
Figure 21. PowerFLAT™ 8x8 HV drawing mechanical data
INDEX AREA
TOP VIEW
PLANESEATING
0.08 C
BOTTOM VIEW
SIDE VIEW
PIN#1 ID
DE
b
A
E2
D2
L0.
40
0.20
±0.0
08
C
bbb C A B
BA
aaa C
aaa C
A1
ccc C
8222871_Rev_B
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STL12N65M5 Package mechanical data
Doc ID 17450 Rev 2 13/17
Figure 22. PowerFLAT™ 8x8 HV recommended footprint
7.30
1.052.00
7.70
4.40
0.60
Footprint
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Packaging mechanical data STL12N65M5
14/17 Doc ID 17450 Rev 2
5 Packaging mechanical data
Figure 23. PowerFLAT™ 8x8 HV tape
Figure 24. PowerFLAT™ 8x8 HV package orientation in carrier tape
W (
16.0
0±0.
3)
E (1.75±0.1)
F (
7.50
±0.
1)
A0 (8.30±0.1)P1 (12.00±0.1)
P2 (2.0±0.1) P0 (4.0±0.1)
D0 ( 1.55±0.05)
D1 ( 1.5 Min)
T (0.30±0.05)
B0
(8.3
0±0.
1)
K0 (1.10±0.1)
Note: Base and Bulk quantity 3000 pcs
8229819_Tape_revA
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STL12N65M5 Packaging mechanical data
Doc ID 17450 Rev 2 15/17
Figure 25. PowerFLAT™ 8x8 HV reel
8229819_Reel_revA
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Revision history STL12N65M5
16/17 Doc ID 17450 Rev 2
6 Revision history
Table 9. Document revision history
Date Revision Changes
30-Apr-2010 1 First release
22-Nov-2011 2
Document status promoted from preliminary data to datasheet:
– Added Section 2.1: Electrical characteristics (curves)– Added Section 5: Packaging mechanical dataMinor text changes
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STL12N65M5
Doc ID 17450 Rev 2 17/17
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