mun5311dw1t1 series dual bias resistor transistors

Semiconductor Components Industries, LLC, 2004

September, 2004 − Rev. 91 Publication Order Number:

MUN5311DW1T1/D

MUN5311DW1T1 SeriesPreferred Devices

Dual Bias Resistor

Transistors

NPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor Network

The BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base−emitter resistor. These digital transistors aredesigned to replace a single device and its external resistor biasnetwork. The BRT eliminates these individual components byintegrating them into a single device. In the MUN5311DW1T1 series,two complementary BRT devices are housed in the SOT−363 packagewhich is ideal for low power surface mount applications where boardspace is at a premium.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7 inch/3000 Unit Tape and Reel

• Pb−Free Package is Available

MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1and Q2, − minus sign for Q1 (PNP) omitted)

Rating Symbol Value Unit

Collector-Base Voltage VCBO 50 Vdc

Collector-Emitter Voltage VCEO 50 Vdc

Collector Current IC 100 mAdc

THERMAL CHARACTERISTICS

Characteristic(One Junction Heated) Symbol Max Unit

Total Device DissipationTA = 25°C

Derate above 25°C

PD 187 (Note 1)256 (Note 2)1.5 (Note 1)2.0 (Note 2)

mW

mW/°C

Thermal Resistance −Junction-to-Ambient

R�JA 670 (Note 1)490 (Note 2)

°C/W

Characteristic(Both Junctions Heated) Symbol Max Unit

Total Device DissipationTA = 25°C

Derate above 25°C

PD 250 (Note 1)385 (Note 2)2.0 (Note 1)3.0 (Note 2)

mW

mW/°C

Thermal Resistance −Junction-to-Ambient

R�JA 493 (Note 1)325 (Note 2)

°C/W

Thermal Resistance −Junction-to-Lead

R�JL 188 (Note 1)208 (Note 2)

°C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

1. FR−4 @ Minimum Pad2. FR−4 @ 1.0 x 1.0 inch Pad

SOT−363CASE 419B

STYLE 1

MARKING DIAGRAM

Preferred devices are recommended choices for future useand best overall value.

ORDERING AND DEVICE MARKINGINFORMATION

See detailed ordering, shipping, and specific markinginformation in the table on page 2 of this data sheet.

Q1

R1R2

R2R1

Q2

(1)(2)(3)

(4) (5) (6)

1

6

XXd

XX = Specific Device Coded = Date Code

= (See Page 2)

1

6

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MUN5311DW1T1 Series

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ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES

Device Package Marking R1 (K) R2 (K) Shipping †

MUN5311DW1T1 SOT−363 11 10 10 3000/Tape & Reel




MUN5315DW1T1 SOT−363 15 10 ∞ 3000/Tape & Reel

MUN5316DW1T1 SOT−363 16 4.7 ∞ 3000/Tape & Reel

MUN5316DW1T1G SOT−363(Pb−Free)

16 4.7 ∞ 3000/Tape & Reel

MUN5330DW1T1 SOT−363 30 1.0 1.0 3000/Tape & Reel



MUN5333DW1T1 SOT−363 33 4.7 47 3000/Tape & Reel


MUN5335DW1T1 SOT−363 35 2.2 47 3000/Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.

ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc

Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc

Emitter-Base Cutoff Current MUN5311DW1T1(VEB = 6.0 V, IC = 0) MUN5312DW1T1

MUN5313DW1T1MUN5314DW1T1MUN5315DW1T1MUN5316DW1T1MUN5330DW1T1MUN5331DW1T1MUN5332DW1T1MUN5333DW1T1MUN5334DW1T1MUN5335DW1T1

IEBO −−−−−−−−−−−−

−−−−−−−−−−−−

0.50.20.10.20.91.94.32.31.50.180.130.2

mAdc

Collector-Base Breakdown Voltage (IC = 10 �A, IE = 0) V(BR)CBO 50 − − Vdc

Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc

3. Pulse Test: Pulse Width < 300 �s, Duty Cycle < 2.0%

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ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) (Continued)

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS (Note 4)

DC Current Gain MUN5311DW1T1(VCE = 10 V, IC = 5.0 mA) MUN5312DW1T1


hFE 356080801601603.08.015808080

601001401403503505.01530200150140

−−−−−−−−−−−−

Collector-Emitter Saturation Voltage(IC = 10 mA, IB = 0.3 mA)(IC = 10 mA, IB = 5 mA) MUN5330DW1T1/MUN5331DW1T1(IC = 10 mA, IB = 1 mA) MUN5315DW1T1/MUN5316DW1T1 MUN5332DW1T1/MUN5333DW1T1/MUN5334DW1T1

VCE(sat) − − 0.25 Vdc

Output Voltage (on)(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k�) MUN5311DW1T1


(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k�) MUN5313DW1T1

VOL−−−−−−−−−−−−

−−−−−−−−−−−−

0.20.20.20.20.20.20.20.20.20.20.20.2

Vdc

Output Voltage (off)(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k�)(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k�) MUN5330DW1T1(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k�) MUN5315DW1T1

MUN5316DW1T1MUN5333DW1T1

VOH 4.9 − − Vdc

Input Resistor MUN5311DW1T1MUN5312DW1T1MUN5313DW1T1MUN5314DW1T1MUN5315DW1T1MUN5316DW1T1MUN5330DW1T1MUN5331DW1T1MUN5332DW1T1MUN5333DW1T1MUN5334DW1T1MUN5335DW1T1

R1 7.015.432.97.07.03.30.71.53.33.315.41.54

10224710104.71.02.24.74.7222.2

1328.661.113136.11.32.96.16.128.62.86

k �

Resistor Ratio MUN5311DW1T1/MUN5312DW1T1/MUN5313DW1T1MUN5314DW1T1MUN5315DW1T1/MUN5316DW1T1MUN5330DW1T1/MUN5331DW1T1/MUN5332DW1T1MUN5333DW1T1MUN5334DW1T1MUN5335DW1T1

R1/R2 0.80.17

−0.8

0.0550.380.038

1.00.21

−1.00.10.470.047

1.20.25

−1.2

0.1850.560.056

4. Pulse Test: Pulse Width < 300 �s, Duty Cycle < 2.0%

MUN5311DW1T1 Series

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Figure 1. Derating Curve

300

200

150

100

50

0−50 0 50 100 150

TA, AMBIENT TEMPERATURE (°C)

R�JA = 490°C/W

250

PD

, PO

WE

R D

ISS

IPA

TIO

N (

mW

)

ALL MUN5311DW1T1 SERIES DEVICES

MUN5311DW1T1 Series

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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1 NPN TRANSISTOR

Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

I C, C

OLL

EC

TOR

CU

RR

EN

T (m

A)

hF

E, D

C C

UR

RE

NT

GA

IN (

NO

RM

ALI

ZE

D)

Figure 2. V CE(sat) versus I C

100 20 30

IC, COLLECTOR CURRENT (mA)

10

1

0.1

TA�=�−25°C

75°C

25°C

40 50

Figure 3. DC Current Gain

Figure 4. Output Capacitance

1

0.1

0.01

0.0010 20 40 50


1000

100

101 10 100


TA�=�75°C

25°C

−25°C

TA�=�−25°C

25°C

Figure 5. Output Current versus Input Voltage

75°C25°C

TA�=�−25°C

100

10

1

0.1

0.01

0.0010 1 2 3 4

Vin, INPUT VOLTAGE (VOLTS)

5 6 7 8 9 10

Figure 6. Input Voltage versus Output Current

500 10 20 30 40

4

3

1

2

0

VR, REVERSE BIAS VOLTAGE (VOLTS)

Cob

, CA

PA

CIT

AN

CE

(pF

)

75°C

VCE = 10 V

f = 1 MHz

IE = 0 V

TA = 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10

VC

E(s

at),

CO

LLE

CTO

R V

OLT

AG

E (

VO

LTS

)

MUN5311DW1T1 Series

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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1 PNP TRANSISTOR

Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

I C, C

OLL

EC

TOR

CU

RR

EN

T (m

A)

hF

E, D

C C

UR

RE

NT

GA

IN (

NO

RM

ALI

ZE

D)


100

10

1

�0.1

�0.01

�0.0010


TA�=�−25°C

25°C

1 �2 3 �4 �5 �6 �7 �8 �9 10


Figure 9. Output Capacitance Figure 10. Output Current versus InputVoltage


�0.01�20


�0.1

1

0 �40 50

1000

1 10 100


TA�=�75°C

−25°C100

10

0


�0.1

1

10

100

10 �20 �30 �40 �50

TA�=�−25°C

25°C

75°C

75°C

IC/IB = 10

500 10 20 30 40

4

3

1

2


Cob

, CA

PA

CIT

AN

CE

(pF

)

0

TA�=�−25°C

25°C

75°C

25°C

VCE = 10 V

f = 1 MHz

lE = 0 V

TA = 25°C

VO = 5 V

VO = 0.2 V

VC

E(s

at),

CO

LLE

CTO

R V

OLT

AG

E (

VO

LTS

)

MUN5311DW1T1 Series

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Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

I C, C

OLL

EC

TOR

CU

RR

EN

T (m

A)

hF

E, D

C C

UR

RE

NT

GA

IN (

NO

RM

ALI

ZE

D)

Figure 12. V CE(sat) versus I C Figure 13. DC Current Gain

Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage

1000

10


TA�=�75°C

25°C

−25°C

100

101 100

75°C 25°C100

0


10

1

0.1

0.01

0.0012 4 6 8 10

TA�=�−25°C

0


100

TA�=�−25°C

75°C

10

1

0.110 20 30 40 50

25°C

Figure 16. Input Voltage versus OutputCurrent

0.001

TA�=�−25°C

75°C

25°C

0.01

0.1

1

40


0 20 50

500 10 20 30 40

4

3

2

1

0


Cob

, CA

PA

CIT

AN

CE

(pF

)

IC/IB = 10VCE = 10 V

f = 1 MHz

IE = 0 V

TA = 25°C

VO = 5 V

VO = 0.2 V

VC

E(s

at),

CO

LLE

CTO

R V

OLT

AG

E (

VO

LTS

)

MUN5311DW1T1 Series

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Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

I C, C

OLL

EC

TOR

CU

RR

EN

T (m

A)

hF

E, D

C C

UR

RE

NT

GA

IN (

NO

RM

ALI

ZE

D)


1000

10


100

101 100



0 10 �20 �30

VO = 0.2 V

TA�=�−25°C

75°C

100

10

1

�0.1�40 �50


100

10

1

�0.1

�0.01

�0.0010 1 �2 �3 �4


�5 �6 �7 �8 �9 10


0.01

�0.1

1

10

�40


0 �20 �50

75°C

25°C

TA�=�−25°C

500 10 20 30 40

4

3

2

1

0


Cob

, CA

PA

CIT

AN

CE

(pF

)

25°C

IC/IB = 10

25°C

−25°C

VCE = 10 V

TA�=�75°C

f = 1 MHz

lE = 0 V

TA = 25°C

75°C 25°C

TA�=�−25°C

VO = 5 V

VC

E(s

at),

CO

LLE

CTO

R V

OLT

AG

E (

VO

LTS

)

MUN5311DW1T1 Series

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Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

I C, C

OLL

EC

TOR

CU

RR

EN

T (m

A)

hF

E, D

C C

UR

RE

NT

GA

IN (

NO

RM

ALI

ZE

D)


0 2 4 6 8 10

100

10

1

0.1

0.01

0.001


TA�=�−25°C

75°C25°C



100

10

1

0.10 10 20 30 40 50



1000

10


TA�=�75°C

25°C

−25°C

100

101 100

25°C

75°C

500 10 20 30 40

1

0.8

0.6

0.4

0.2

0


Cob

, CA

PA

CIT

AN

CE

(pF

)


0 20 40 50

10

1

0.1

0.01


25°C

75°C

VCE = 10 V

f = 1 MHz

IE = 0 V

TA = 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10

TA�=�−25°C

TA�=�−25°C

VC

E(s

at),

CO

LLE

CTO

R V

OLT

AG

E (

VO

LTS

)

MUN5311DW1T1 Series

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Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

I C, C

OLL

EC

TOR

CU

RR

EN

T (m

A)

hF

E, D

C C

UR

RE

NT

GA

IN (

NO

RM

ALI

ZE

D)



1

�0.1

�0.010 10 20 30 40

75°C

25°C


1000

100

101 10 100


−25°C


100

10

1

�0.1

�0.01

�0.0010 10

25°C


−25°C

500 10 20 30 40

1

0.8

0.6

0.4

0.2

0


Cob

, CA

PA

CIT

AN

CE

(pF

)

1 2 3 �4 �5 �6 �7 �8 �9


100

10

1

�0.10 10 �20 �30 �40


TA�=�−25°C25°C

75°C

�50

IC/IB = 10

TA�=�−25°C 25°C

TA�=�75°C

f = 1 MHz

lE = 0 V

TA = 25°C

VO = 5 V

TA�=�75°C

VO = 0.2 V

VC

E(s

at),

CO

LLE

CTO

R V

OLT

AG

E (

VO

LTS

)

MUN5311DW1T1 Series

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10

1

0.10 10 20 30 40 50

100

10

10 2 4 6 8 10

4

3.5

3

2.5

2

1.5

1

0.5

00 2 4 6 8 10 15 20 25 30 35 40 45 50


Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

I C, C

OLL

EC

TOR

CU

RR

EN

T (m

A)

hF

E, D

C C

UR

RE

NT

GA

IN (

NO

RM

ALI

ZE

D)



0 20 40 60 80


1 10 100




Cob

, CA

PA

CIT

AN

CE

(pF

)



1

0.1

0.01

0.001

−25°C

25°C

TA�=�75°CVCE = 10

300

250

200

150

100

50

02 4 6 8 15 20 40 50 60 70 80 90

f = 1 MHz

lE = 0 V

TA = 25°C

25°C

IC/IB = 10TA�=�−25°C

TA�=�75°C 25°C

−25°C

VO = 0.2 V TA�=�−25°C

75°C

VO = 5 V

25°C

75°C

VC

E(s

at),

CO

LLE

CTO

R V

OLT

AG

E (

VO

LTS

)

MUN5311DW1T1 Series

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10

1

0.10 10 20 30 40 50

100

10

10 2 4 6 8 10

4.5

4

3.5

3

2.5

2

1.5

1

0.5

00 2 4 6 8 10 15 20 25 30 35 40 45 50


Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

I C, C

OLL

EC

TOR

CU

RR

EN

T (m

A)

hF

E, D

C C

UR

RE

NT

GA

IN (

NO

RM

ALI

ZE

D)



0 20 40 60 80


1 10 100




Cob

, CA

PA

CIT

AN

CE

(pF

)



1

0.1

0.01

0.001

−25°C

25°C

TA�=�75°CVCE = 10 V

180

160

140

120

100

80

60

40

20

02 4 6 8 15 20 40 50 60 70 80 90

f = 1 MHz

lE = 0 V

TA = 25°C

25°C

IC/IB = 10TA�=�−25°C

TA�=�75°C 25°C

−25°C

VO = 5 V

VO = 0.2 V 25°C

TA�=�−25°C

75°C

75°C

VC

E(s

at),

CO

LLE

CTO

R V

OLT

AG

E (

VO

LTS

)

MUN5311DW1T1 Series

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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1 NPN TRANSISTOR

75°C

25°C−25°C



Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)




1

0.1

504020100


100101

100

10

10.001

1000

VC

E(s

at),

CO

LLE

CT

OR

VO

LTA

GE

(V

OLT

S)

h FE, D

C C

UR

RE

NT

GA

IN

6

45 504030201000

Cob

, CA

PA

CIT

AN

CE

(pF

)

2

4

8

100

65432100.001

1

10

I C, C

OLL

EC

TO

R C

UR

RE

NT

(m

A)

10987

10

30201000.1

1

40 50

Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

75°C

25°C

TA = −25°C

75°C

25°C

TA = −25°C

75°C25°C

TA = −25°C

0.01

3525155

0.01

0.1

30

10

12

f = 1 MHzIE = 0 VTA = 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10 VCE = 10 V

MUN5311DW1T1 Series

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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1 PNP TRANSISTOR

75°C

25°C−25°C







1

0.1

504020100


100101

100

10

10.001

1000

VC

E(s

at),

CO

LLE

CT

OR

VO

LTA

GE

(V

OLT

S)

h FE, D

C C

UR

RE

NT

GA

IN100

65432100.001

1

10

I C, C

OLL

EC

TO

R C

UR

RE

NT

(m

A)

10987

10

30201000.1

1

40 50

Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

75°C

25°CTA = −25°C

75°C

25°C

TA = −25°C

75°C25°C

TA = −25°C

0.01

0.01

0.1

30


4.5

1.5

45 504030201000

Cob

, CA

PA

CIT

AN

CE

(pF

)

0.5

1

2

4

3525155

3.5

3

2.5

f = 1 MHzIE = 0 VTA = 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10 VCE = 10 V

MUN5311DW1T1 Series

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75°C

25°C−25°C







1

0.1

504020100


100101

100

10

10.001

1000

VC

E(s

at),

CO

LLE

CT

OR

VO

LTA

GE

(V

OLT

S)

h FE, D

C C

UR

RE

NT

GA

IN

6

45 504030201000

Cob

, CA

PA

CIT

AN

CE

(pF

)

2

4

8

100

65432100.001

1

10

I C, C

OLL

EC

TO

R C

UR

RE

NT

(m

A)

10987

10

30201000.1

1

40 50

Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

75°C

25°C

TA = −25°C

75°C

25°C

TA = −25°C

75°C25°C

TA = −25°C

0.01

3525155

0.01

0.1

30

10

12

f = 1 MHzIE = 0 VTA = 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10 VCE = 10 V

MUN5311DW1T1 Series

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75°C

25°C−25°C







1

0.1

504020100


100101

100

10

10.001

1000

VC

E(s

at),

CO

LLE

CT

OR

VO

LTA

GE

(V

OLT

S)

h FE, D

C C

UR

RE

NT

GA

IN100

65432100.001

1

10

I C, C

OLL

EC

TO

R C

UR

RE

NT

(m

A)

10987

10

30201000.1

1

40 50

Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

75°C

25°CTA = −25°C

75°C

25°C

TA = −25°C

75°C25°C

TA = −25°C

0.01

0.01

0.1

30


4.5

1.5

45 504030201000

Cob

, CA

PA

CIT

AN

CE

(pF

)

0.5

1

2

4

3525155

3.5

3

2.5

f = 1 MHzIE = 0 VTA = 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10 VCE = 10 V

MUN5311DW1T1 Series

http://onsemi.com17


75°C

25°C−25°C







1

0.1

302520151050


100101

100

10

10.001

1000

VC

E(s

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1

10

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(m

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PU

T V

OLT

AG

E (

VO

LTS

)

75°C

25°CTA = −25°C

75°C

25°C

TA = −25°C75°C

25°C

TA = −25°C

0.01

0.01

0.1

VO = 5 V VO = 0.2 V

IC/IB = 10 VCE = 10 V

MUN5311DW1T1 Series

http://onsemi.com18


75°C

25°C−25°C







1

0.1

504020100


100101

100

10

10.001

VC

E(s

at),

CO

LLE

CT

OR

VO

LTA

GE

(V

OLT

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h FE, D

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IN4.5

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45 504030201000

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0.5

1

2

4

100

65432100.001

1

10

I C, C

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EC

TO

R C

UR

RE

NT

(m

A)

10987

10

30201000.1

1

40 50

Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

75°C

25°C

TA = −25°C

75°C

25°C

TA = −25°C

75°C25°C

TA = −25°C

0.01

3525155

0.01

0.1

30

3.5

3

2.5

f = 1 MHzIE = 0 VTA = 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10

VCE = 10 V

MUN5311DW1T1 Series

http://onsemi.com19


75°C

25°C−25°C







1

0.1

302520151050


100101

100

10

10.001

1000

VC

E(s

at),

CO

LLE

CT

OR

VO

LTA

GE

(V

OLT

S)

h FE, D

C C

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45 504030201000

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2

4

8

10

100

65432100.001

1

10

I C, C

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EC

TO

R C

UR

RE

NT

(m

A)

10987

10

1510500.1

1

20 25

Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

75°C

25°CTA = −25°C

75°C

25°C

TA = −25°C

75°C25°C

TA = −25°C

0.01

3525155

0.01

0.1

f = 1 MHzIE = 0 VTA = 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10 VCE = 10 V

MUN5311DW1T1 Series

http://onsemi.com20


75°C

25°C−25°C







1

0.1

504020100


100101

100

10

10.001

VC

E(s

at),

CO

LLE

CT

OR

VO

LTA

GE

(V

OLT

S)

h FE, D

C C

UR

RE

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IN4.5

1.5

45 504030201000

Cob

, CA

PA

CIT

AN

CE

(pF

)

0.5

1

2

4

100

65432100.001

1

10

I C, C

OLL

EC

TO

R C

UR

RE

NT

(m

A)

10987

10

30201000.1

1

40 50

Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

75°C 25°C

TA = −25°C

75°C

25°C

TA = −25°C

75°C25°C

TA = −25°C

0.01

3525155

0.01

0.1

30

3.5

3

2.5

f = 1 MHzIE = 0 VTA = 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10

VCE = 10 V

MUN5311DW1T1 Series

http://onsemi.com21


75°C

25°C−25°C







1

0.1

504020100


100101

100

10

10.001

1000

VC

E(s

at),

CO

LLE

CT

OR

VO

LTA

GE

(V

OLT

S)

h FE, D

C C

UR

RE

NT

GA

IN

6

45 504030201000

Cob

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PA

CIT

AN

CE

(pF

)

2

4

8

100

65432100.001

1

10

I C, C

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EC

TO

R C

UR

RE

NT

(m

A)

10987

10

30201000.1

1

40 50

Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

75°C

25°C

TA = −25°C

75°C

25°C

TA = −25°C

75°C25°C

TA = −25°C

0.01

3525155

0.01

0.1

30

10

12

f = 1 MHzIE = 0 VTA = 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10 VCE = 10 V

MUN5311DW1T1 Series

http://onsemi.com22


75°C

25°C−25°C







1

0.1

504020100


100101

1000

10

10.001

VC

E(s

at),

CO

LLE

CT

OR

VO

LTA

GE

(V

OLT

S)

h FE, D

C C

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IN

45 504030201000

Cob

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PA

CIT

AN

CE

(pF

)

1

2

4

100

65432100.001

1

10

I C, C

OLL

EC

TO

R C

UR

RE

NT

(m

A)

10987

10

30201000.1

1

40 50

Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

75°C

25°CTA = −25°C

75°C25°C

TA = −25°C

75°C 25°C

TA = −25°C

0.01

3525155

0.01

0.1

30

3

100

5

6

f = 1 MHzIE = 0 VTA = 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10 VCE = 10 V

MUN5311DW1T1 Series

http://onsemi.com23


75°C

25°C−25°C







1

0.1

302515100


100101

1000

10

10.001

VC

E(s

at),

CO

LLE

CT

OR

VO

LTA

GE

(V

OLT

S)

h FE, D

C C

UR

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GA

IN

1.5

45 504030201000

Cob

, CA

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0.5

1

2

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1

10

I C, C

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R C

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(m

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10987

10

1510500.1

1

20 25

Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

75°C

25°CTA = −25°C

75°C

25°C

TA = −25°C

75°C 25°C

TA = −25°C

0.01

3525155

0.01

0.1

20

3.5

3

2.5

100

5

f = 1 MHzIE = 0 VTA = 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10 VCE = 10 V

MUN5311DW1T1 Series

http://onsemi.com24


75°C

25°C−25°C







1

0.1

504020100


100101

100

10

10.001

1000

VC

E(s

at),

CO

LLE

CT

OR

VO

LTA

GE

(V

OLT

S)

h FE, D

C C

UR

RE

NT

GA

IN

6

45 504030201000

Cob

, CA

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CIT

AN

CE

(pF

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2

4

8 100

65432100.001

1

10

I C, C

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EC

TO

R C

UR

RE

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(m

A)

10987

10

30201000.1

1

40 50

Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

75°C

25°CTA = −25°C

75°C

25°C

TA = −25°C

75°C 25°C

TA = −25°C

0.01

3525155

0.01

0.1

30

5

1

3

7 f = 1 MHzIE = 0 VTA = 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10 VCE = 10 V

MUN5311DW1T1 Series

http://onsemi.com25


75°C

25°C−25°C







1

0.1

504020100


100101

100

10

10.001

1000

VC

E(s

at),

CO

LLE

CT

OR

VO

LTA

GE

(V

OLT

S)

h FE, D

C C

UR

RE

NT

GA

IN

3

45 504030201000

Cob

, CA

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CIT

AN

CE

(pF

)

1

2

100

65432100.001

1

10

I C, C

OLL

EC

TO

R C

UR

RE

NT

(m

A)

10987

100

30201000.1

1

40 50

Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

75°C

25°CTA = −25°C

75°C

25°C

TA = −25°C

75°C25°C

TA = −25°C

0.01

3525155

0.01

0.1

30

2.5

0.5

1.5

3.5

10

f = 1 MHzIE = 0 VTA = 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10 VCE = 10 V

MUN5311DW1T1 Series

http://onsemi.com26


75°C

25°C−25°C

Figure 106. V CE(sat ) versus I C Figure 107. DC Current Gain


1

0.1

302515100


100101

1000

10

10.001

VC

E(s

at),

CO

LLE

CT

OR

VO

LTA

GE

(V

OLT

S)

h FE, D

C C

UR

RE

NT

GA

IN

75°C

25°CTA = −25°C

0.01

20

100

5

IC/IB = 10 VCE = 10 V

MUN5311DW1T1 Series

http://onsemi.com27


75°C

25°C−25°C







1

0.1

504020100


100101

100

10

10.001

1000

VC

E(s

at),

CO

LLE

CT

OR

VO

LTA

GE

(V

OLT

S)

h FE, D

C C

UR

RE

NT

GA

IN

6

45 504030201000

Cob

, CA

PA

CIT

AN

CE

(pF

)

2

4

8

100

65432100.001

1

10

I C, C

OLL

EC

TO

R C

UR

RE

NT

(m

A)

10987

10

30201000.1

1

40 50

Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

75°C

25°CTA = −25°C

75°C

25°C

TA = −25°C

75°C25°C

TA = −25°C

0.01

3525155

0.01

0.1

30

10

12

f = 1 MHzIE = 0 VTA = 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10 VCE = 10 V

MUN5311DW1T1 Series

http://onsemi.com28


75°C

25°C−25°C







1

0.1

504020100


100101

1000

10

10.001

VC

E(s

at),

CO

LLE

CT

OR

VO

LTA

GE

(V

OLT

S)

h FE, D

C C

UR

RE

NT

GA

IN

1.5

45 504030201000

Cob

, CA

PA

CIT

AN

CE

(pF

)

0.5

1

2

4

100

65432100.001

1

10

I C, C

OLL

EC

TO

R C

UR

RE

NT

(m

A)

10987

10

30201000.1

1

40 50

Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

75°C

25°CTA = −25°C

75°C

25°C

TA = −25°C

75°C

25°C TA = −25°C

0.01

3525155

0.01

0.1

30

3.5

3

2.5

100

4.5

f = 1 MHzIE = 0 VTA = 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10 VCE = 10 V

MUN5311DW1T1 Series

http://onsemi.com29


75°C25°C

−25°C







1

0.1

76543210


100101

100

10

10.01

1000

VC

E(s

at),

CO

LLE

CT

OR

VO

LTA

GE

(V

OLT

S)

h FE, D

C C

UR

RE

NT

GA

IN (

NO

RM

ALI

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1.2

0.6

60504030201000

Cob

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0.2

0.4

0.8

1.0

100

65432100.1

1

10

I C, C

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EC

TO

R C

UR

RE

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(m

A)

10987

100

1210864201

10

181614 20

Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

IC/IB = 10

75°C

25°CTA = −25°C

VCE = 10 V

75°C25°C

TA = −25°C

VO = 5 V

VO = 0.2 V75°C

25°C TA = −25°C

f = 1 MHzIE = 0 VTA = 25°C

MUN5311DW1T1 Series

http://onsemi.com30


75°C

25°C

−25°C







1

0.1

504020100


100101

1000

10

10.001

VC

E(s

at),

CO

LLE

CT

OR

VO

LTA

GE

(V

OLT

S)

h FE, D

C C

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RE

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GA

IN

1.5

45 504030201000

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AN

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0.5

1

2

4

100

65432100.001

1

10

I C, C

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EC

TO

R C

UR

RE

NT

(m

A)

10987

100

30201000.1

1

40 50

Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

75°C

25°CTA = −25°C

75°C

25°C

TA = −25°C

75°C25°C

TA = −25°C

0.01

3525155

0.01

0.1

30

3.5

3

2.5

100

4.5

5

10

f = 1 MHzIE = 0 VTA = 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10 VCE = 10 V

MUN5311DW1T1 Series

http://onsemi.com31








1

0.1

35302520151050


100101

100

100.01

1000

h FE, D

C C

UR

RE

NT

GA

IN (

NO

RM

ALI

ZE

D)

1.4

0.6

60504030201000

Cob

, CA

PA

CIT

AN

CE

(pF

)

0.2

0.4

0.8

1.0

100

65432100.001

1

10

I C, C

OLL

EC

TO

R C

UR

RE

NT

(m

A)

11987

100

1510501

10

20 25

Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

504540

0.1

0.01

10

1.2f = 1 MHzIE = 0 VTA = 25°C

75°C

25°C

TA = −25°C

VO = 5 V

75°C

25°C

TA = −25°C

VO = 0.2 V

75°C

25°C

TA = −25°C

IC/IB = 10VCE = 10 V

75°C

25°C

TA = −25°C

VC

E(s

at),

CO

LLE

CT

OR

VO

LTA

GE

(V

OLT

S)

MUN5311DW1T1 Series

http://onsemi.com32


75°C

25°C

−25°C







1

0.1

504020100


100101

1000

10

10.001

VC

E(s

at),

CO

LLE

CT

OR

VO

LTA

GE

(V

OLT

S)

h FE, D

C C

UR

RE

NT

GA

IN

1.5

45 504030201000

Cob

, CA

PA

CIT

AN

CE

(pF

)

0.5

1

2

4

100

65432100.001

1

10

I C, C

OLL

EC

TO

R C

UR

RE

NT

(m

A)

10987

100

30201000.1

1

40 50

Vin

, IN

PU

T V

OLT

AG

E (

VO

LTS

)

75°C

25°CTA = −25°C

75°C

25°C

TA = −25°C

75°C 25°C

TA = −25°C

0.01

3525155

0.01

0.1

30

3.5

3

2.5

100

4.5

5

10

f = 1 MHzIE = 0 VTA = 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10 VCE = 10 V

MUN5311DW1T1 Series

http://onsemi.com33

PACKAGE DIMENSIONS

SOT−363CASE 419B−02

ISSUE T

STYLE 1:PIN 1. EMITTER 2

2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2

*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.

DIMA

MIN MAX MIN MAXMILLIMETERS

1.80 2.200.071 0.087

INCHES

B 1.15 1.350.045 0.053C 0.80 1.100.031 0.043D 0.10 0.300.004 0.012G 0.65 BSC0.026 BSCH −−− 0.10−−−0.004J 0.10 0.250.004 0.010K 0.10 0.300.004 0.012N 0.20 REF0.008 REFS 2.00 2.200.079 0.087B0.2 (0.008) M M

1 2 3

A

G

S

H

C

N

J

K

6 5 4

−B−

D 6 PL

� mminches

�SCALE 20:1

0.650.025

0.650.025

0.500.0197

0.400.0157

1.90.0748

MUN5311DW1T1 Series

http://onsemi.com34

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. Alloperating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rightsnor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. ShouldBuyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an EqualOpportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATIONN. American Technical Support : 800−282−9855 Toll FreeUSA/Canada

Japan : ON Semiconductor, Japan Customer Focus Center2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051Phone : 81−3−5773−3850

MUN5311DW1T1/D

LITERATURE FULFILLMENT :Literature Distribution Center for ON SemiconductorP.O. Box 61312, Phoenix, Arizona 85082−1312 USAPhone : 480−829−7710 or 800−344−3860 Toll Free USA/CanadaFax: 480−829−7709 or 800−344−3867 Toll Free USA/CanadaEmail : [email protected]

ON Semiconductor Website : http://onsemi.com

Order Literature : http://www.onsemi.com/litorder

For additional information, please contact yourlocal Sales Representative.

mun5311dw1t1 series dual bias resistor transistors

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