multiphysics modeling of fast dynamic switching transients

Multiphysics Modeling of Fast Dynamic Switching Transients Semester/Master Thesis (HS 2021) Power PCB DUT PCB a) b) ESL 2 ESL 1 ESR 2 ESR 1 D DUT DUT PCB Power PCB Power PCB C HV2 V test = 800V C HV1 I test = 20A 150nF 12.5μF 166μH 2.5Ω R G V G L load net HV net L net GND I S V DS V GS Fig. 1: Circuit-electromagnetic coupled modeling of power semiconductor devices: a) an equivalent circuit of a switching cell, and b) a PCB layout electromagnetic model of the switching cell. Introduction The parasitics of power semiconductor packages and power converter layouts increase in importance with the fast switching properties of wide-band gap (WBG) power semiconductor devices. Three dimensional electromagnetic-circuit modeling allows the coupling of device physics and external capacitive and/or induc- tive parasitic effects. ANSYS Electronics Desktop is a state-of-the-art software package frequently used in industry to evaluate complex switching waveforms of power devices and hence, properly design the external interconnections and layouts. The aim of this thesis is to identify the dominant parasitic effects determining the device switching performance using the 3D modeling and propose guidelines for designing switching cell PCB layout optimized with respect to HF electromagnetic effects. A student can gain a broad experience in PCB layout design of switching PCB boards and the multiphysics modeling using ANSYS software and circuit simulators. Scope of the Thesis The work can be adjusted towards semester and master thesis project roughly according to the topics: • Extraction of layout parasitics using ANSYS HFSS and ANSYS Q3D Extractor. Circuit simulations using device compact models of SiC power MOSFETs and the extracted electromagnetic layout model in circuit simulators. (40 %) • Double pulse-measurements of commercially available SiC power MOSFETs; Proposing guidelines for designing PCB layouts optimized with respect to HF electromagnetic effects (30 %) • TCAD mixed-mode device simulation with the extracted layout parasitics. (20 %) • Documentation (10 %) Contact For more details please contact: Supervisors: Dr. Ivana Kovacevic-Badstuebner [email protected] ETL F24.2 Salvatore Race [email protected] ETL F24.2 Professor: Prof. Dr. U. Grossner [email protected] ETL F 28

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Multiphysics Modeling of Fast Dynamic SwitchingTransients

Semester/Master Thesis (HS 2021)

Power PCB

DUT PCB

a) b)

ESL2 ESL1

ESR2 ESR1DDUT

DUT PCBPower PCB Power PCB

CHV2

Vtest= 800V

CHV1

Itest = 20A150nF 12.5µF

166µH

2.5ΩRG

Lload

net HV

net L

net GND

VDS

VGS

Fig. 1: Circuit-electromagnetic coupled modeling of power semiconductor devices: a) an equivalent circuit ofa switching cell, and b) a PCB layout electromagnetic model of the switching cell.

Introduction

The parasitics of power semiconductor packages and power converter layouts increase in importance withthe fast switching properties of wide-band gap (WBG) power semiconductor devices. Three dimensionalelectromagnetic-circuit modeling allows the coupling of device physics and external capacitive and/or induc-tive parasitic effects. ANSYS Electronics Desktop is a state-of-the-art software package frequently used inindustry to evaluate complex switching waveforms of power devices and hence, properly design the externalinterconnections and layouts. The aim of this thesis is to identify the dominant parasitic effects determiningthe device switching performance using the 3D modeling and propose guidelines for designing switching cellPCB layout optimized with respect to HF electromagnetic effects. A student can gain a broad experience inPCB layout design of switching PCB boards and the multiphysics modeling using ANSYS software and circuitsimulators.

Scope of the Thesis

The work can be adjusted towards semester and master thesis project roughly according to the topics:

• Extraction of layout parasitics using ANSYS HFSS and ANSYS Q3D Extractor. Circuit simulationsusing device compact models of SiC power MOSFETs and the extracted electromagnetic layout modelin circuit simulators. (40 %)

• Double pulse-measurements of commercially available SiC power MOSFETs; Proposing guidelines fordesigning PCB layouts optimized with respect to HF electromagnetic effects (30 %)

• TCAD mixed-mode device simulation with the extracted layout parasitics. (20 %)

• Documentation (10 %)

Contact For more details please contact:

Supervisors: Dr. Ivana Kovacevic-Badstuebner [email protected] ETL F24.2Salvatore Race [email protected] ETL F24.2

Professor: Prof. Dr. U. Grossner [email protected] ETL F 28

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