mseasuslides: muddiest points: electronic properties ii

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Muddiest Points Muddiest Points: “What are the differences between intrinsic and extrinsic semiconductors?” “What are the differences between n type and p type extrinsic semiconductors?” “How does temperature affect each type of semiconductor?” “What are the differences in the conductivity equation for intrinsic and extrinsic semiconductors?” “What is the relation of electron and electron-hole mobility to conductivity?” Electronic Properties II: Intrinsic & Extrinsic Semiconductors

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This slide set was used to create the MaterialsConcepts YouTube Video "Muddiest points: Electronic Properties II". Here is the link to that video: https://www.youtube.com/watch?v=-MC_YX7ruhs To study the vocab used in this video, visit this site: http://quizlet.com/24383455/72-electronic-properties-ii-intrinsic-extrinsic-semiconductors-flash-cards/ This work was supported by NSF Grants #0836041 and #1226325

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Page 1: MSEASUSlides: Muddiest points: Electronic Properties II

Muddiest Points

Muddiest Points: • “What are the differences between intrinsic and

extrinsic semiconductors?”

• “What are the differences between n type and p type extrinsic semiconductors?”

• “How does temperature affect each type of semiconductor?”

• “What are the differences in the conductivity equation for intrinsic and extrinsic semiconductors?”

• “What is the relation of electron and electron-hole mobility to conductivity?”

Electronic Properties II: Intrinsic & Extrinsic Semiconductors

Page 2: MSEASUSlides: Muddiest points: Electronic Properties II

Intrinsic Semiconductors

No Dopants

ENER

GY

Less than 1021/m3 impurity atoms (10-6 wt% impurities)

electron-hole pairs (n=p=ni) Conductivity increases with

an increase in temperature (creates more e-h pairs)

Energy Gap (Eg) is constant and between 0.1eV-2eV

Group IV elemental semiconductors

Group III + Group V are compound semiconductors

Page 3: MSEASUSlides: Muddiest points: Electronic Properties II

Extrinsic Semiconductors: p-type

p-type Dopants

ENER

GY

Impurity atoms have one less valence electron than the host

Majority Charge Carriers: electron holes (p>>n)

Minority Charge Carriers: electrons (n<<p)

Acceptor States (contribute electron holes)

Saturation = all acceptor states filled

Example: Boron (B3+), Group III, impurity atoms within a Silicon host (Si4+), Group IV

Page 4: MSEASUSlides: Muddiest points: Electronic Properties II

Extrinsic Semiconductors: n-type

n-type Dopants

ENER

GY

Impurity atoms have one more valence electron than the host

Majority Charge Carriers: electrons (n>>p)

Minority Charge Carriers: electron holes (p<<n)

Donor States (contribute electrons)

Exhaustion = every donated electron in Cond. Band

Example: Phosphorus (P5+), Group V, impurity atoms within a Silicon host (Si4+), Group IV

Page 5: MSEASUSlides: Muddiest points: Electronic Properties II

Intrinsic - Electron and Hole Migration EN

ERG

Y

- - + +

Si4+

Si4+ Si4+

Page 6: MSEASUSlides: Muddiest points: Electronic Properties II

Extrinsic p-type: Majority Carriers - Holes EN

ERG

Y

Si4+

B3+

*No electric field applied

Page 7: MSEASUSlides: Muddiest points: Electronic Properties II

Extrinsic n-type: Majority Carriers - Electrons EN

ERG

Y

Si4+

P5+

*No electric field applied

Page 8: MSEASUSlides: Muddiest points: Electronic Properties II

Effect of Temperature: Intrinsic

𝛔 = 𝒏𝒊𝒒(𝛍𝒆 + 𝛍𝒉)

𝒏𝒊 ∝ 𝒆−𝑬𝒈

𝟐𝒌𝑻

ni = intrinsic carrier density (# of carriers/m3) Eg = energy gap (eV) k = Boltzmann Constant (8.6173 x 10-16 eV-K-1) T = Temperature (K)

Page 9: MSEASUSlides: Muddiest points: Electronic Properties II

Effect of Temperature: Intrinsic

𝛔 = 𝒏𝒊𝒒(𝛍𝒆 + 𝛍𝒉)

𝒏𝒊 ∝ 𝒆−𝑬𝒈

𝟐𝒌𝑻

ni = intrinsic carrier density (# of carriers/m3) Eg = energy gap (eV) k = Boltzmann Constant (8.6173 x 10-16 eV-K-1) T = Temperature (K)

Page 10: MSEASUSlides: Muddiest points: Electronic Properties II

Effect of Temperature: Extrinsic

Freeze-out region: not enough thermal energy for dopant activation

Extrinsic region: limited temperature effect on extrinsic conductivity

Intrinsic region: an increase in temperature, increases thermal energy creating a large number of electron-hole pairs

Page 11: MSEASUSlides: Muddiest points: Electronic Properties II

Conductivity Equation

𝛔 = 𝐧𝐪𝛍𝒆 + 𝐩𝐪𝛍𝒉

Intrinsic Semiconductors (n=p=ni)

σ = conductivity (ohm-m)-1

ni = intrinsic carrier density (# of carriers/m3)

q = electric charge 1.6x10-19 (C)

μe = electron mobility (m2/(V-s))

μh = electron hole mobility (m2/(V-s))

𝛔 = 𝒏𝒊𝒒(𝛍𝒆 + 𝛍𝒉)

Page 12: MSEASUSlides: Muddiest points: Electronic Properties II

Conductivity Equation: p-type

𝛔 = 𝐧𝐪𝛍𝒆 + 𝐩𝐪𝛍𝒉

Extrinsic Semiconductors: p-type (p>>n)

σ = conductivity (ohm-m)-1

p = positive carrier density (# of carriers/m3)

q = electric charge 1.6x10-19 (C)

μh = electron hole mobility (m2/(V-s))

𝛔 ≈ 𝒑𝒒𝛍𝒉

Page 13: MSEASUSlides: Muddiest points: Electronic Properties II

Example 1: p-type Conductivity

What is the conductivity of silicon containing 3.13 x 1021 boron dopant atoms per m3? Silicon has an electron mobility of 0.14 (m2/(V-s)) and a hole mobility of 0.05 (m2/(V-s)).

𝛔 = 𝐧𝐪𝛍𝒆 + 𝐩𝐪𝛍𝒉 𝛔 ≈ 𝒑𝒒𝛍𝒉

𝛍 𝒉= 0.05 (m2/(V-s)) 𝒑= 3.13 x 1021 m-3

𝛔 = (3.13 x 1021 m-3)(1.6x10-19 C)(0.05 m2/(V-s))

𝛔 = 𝟐𝟓. 𝟎𝟒 (Ω-m)-1

Page 14: MSEASUSlides: Muddiest points: Electronic Properties II

Conductivity Equation: n-type

𝛔 = 𝐧𝐪𝛍𝒆 + 𝐩𝐪𝛍𝒉

Extrinsic Semiconductors: n-type (n>>p)

σ = conductivity (ohm-m)-1

n = negative carrier density (# of carriers/m3)

q = electric charge 1.6x10-19 (C)

μe = electron mobility (m2/(V-s))

𝛔 ≈ 𝒏𝒒𝛍𝒆

Page 15: MSEASUSlides: Muddiest points: Electronic Properties II

Example 2: n-type Conductivity

What is the conductivity of silicon containing 3.13 x 1021 phosphorus dopant atoms per m3? Silicon has an electron mobility of 0.14 (m2/(V-s)) and a hole mobility of 0.05 (m2/(V-s)).

𝛔 = 𝐧𝐪𝛍𝒆 + 𝐩𝐪𝛍𝒉 𝛔 ≈ 𝒏𝒒𝛍𝒆

𝛍 𝒆= 0.14 (m2/(V-s)) 𝐧= 3.13 x 1021 m-3

𝛔 = (3.13 x 1021 m-3)(1.6x10-19 C)(0.14 m2/(V-s))

𝛔 = 𝟕𝟎. 𝟏𝟏 (Ω-m)-1

Page 16: MSEASUSlides: Muddiest points: Electronic Properties II

Wrap-Up

• “What are the differences between intrinsic and extrinsic semiconductors?”

• “What are the differences between n type and p type extrinsic semiconductors?”

• “How does temperature affect each type of semiconductor?”

• “What are the differences in the conductivity equation for intrinsic and extrinsic semiconductors?”

• “What is the relation of electron and electron-hole mobility to conductivity?”

Electronic Properties II: Intrinsic & Extrinsic Semiconductors