mosfet - kexin · rds(on) < 100mΩ (vgs =-10v) ... tj 150 tstg-55 to 150 id ower d is pat n j unc...
TRANSCRIPT
SMD Type
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MOSFET
P-Channel MOSFETKI2955DS
■ Features ● VDS (V) =-60V
● ID =-3.5 A (VGS =-10V)
● RDS(ON) < 100 mΩ (VGS =-10V)
● RDS(ON) < 120 mΩ (VGS =-4.5V)
■ Absolute Maximum Ratings Ta = 25℃
Symbol Rating Unit
VDS -60
VGS ±20
Ta = 25℃ -3.5
Ta = 100℃ -2.2
Pulsed Drain Current (Note.1) IDM -20
PD 1.25 W
Thermal Resistance.Junction- to-Ambient (Note.2) RthJA 100 ℃/W
TJ 150
Tstg -55 to 150
ID
Power Dissipation
Junction Temperature
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
A
℃ Junction Storage Temperature Range
Note.1:Pulse Width ≤300μs, Duty Cycle≤2%
Note.2:1.Surface mounted on 1 in² copper pad of FR-4 board. 156/W when mounted on minimum copper pad.
0.4 +0.1-0.1
2.9 +0.1-0.1
0.95 +0.1-0.1
1.9 +0.1-0.1
2.4
+0.1
-0.1
1.3
+0.1
-0.1
0-0.1
0.38
+0.1
-0.1
0.97
+0.1
-0.1
0.55
0.4
1 2
3
Unit: mmSOT-23
0.1 +0.05-0.01
1. Gate2. Source3. Drain
SMD Type
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MOSFET
P-Channel MOSFETKI2955DS
■ Electrical Characteristics Ta = 25℃
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -60 V
VDS=-48V, VGS=0V 1
VDS=-48V, VGS=0V, TJ=70℃ 25
Gate-Body leakage current IGSS VDS=0V, VGS=±20V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -1 -2.5 V
VGS=-10V, ID=-3A 100
VGS=-4.5V, ID=-2.7A 120
Forward Transconductance gFS VDS=-5V, ID=-3A 5.8 S
Input Capacitance Ciss 929
Output Capacitance Coss 48
Reverse Transfer Capacitance Crss 33
Total Gate Charge Qg 14
Gate Source Charge Qgs 3
Gate Drain Charge Qgd 3.4
Turn-On DelayTime td(on) 10
Turn-On Rise Time tr 22
Turn-Off DelayTime td(off) 27
Turn-Off Fall Time tf 14
Body Diode Reverse Recovery Time trr 12
Body Diode Reverse Recovery Charge Qrr 7 nC
Maximum Body-Diode Continuous Current IS -3.5
Body-Diode Pulsed Current ISM -20
Diode Forward Voltage VSD IS=-2A,VGS=0V -1.2 V
VGS=0V, VDS=-30V, f=1MHz
VGS=-10V, VDS=-30V, ID=-3.5A
IF=-2A, VGS=0V, dI/dt=100A/μs
A
pF
nC
ns
Zero Gate Voltage Drain Current IDSS uA
mΩ
VGS=-10V, VDS=-30V, ID=-1A,RG=6Ω
RDS(On) Static Drain-Source On-Resistance
Note:Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
■ Marking
Marking 2955
SMD Type
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MOSFET
P-Channel MOSFETKI2955DS
■ Typical CharacterisiticsTypical Output Characteristics
0
5
10
15
20
0 1 2 3 4 5-VDS, Drain-Source Voltage(V)
-I D, D
rain
Cur
rent
(A)
-VGS=2.5V
-VGS=3V
-VGS=3.5V
-VGS=4V
10V
9V
8V
7V
6V
4.5V
Brekdown Voltage vs Ambient Temperature
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
-BV D
SS, N
orm
aliz
ed D
rain
-Sou
rce
Bre
akdo
wn
Volta
geID=-250uA,
VGS=0V
Static Drain-Source On-State resistance vs Drain Current
10
100
1000
0.01 0.1 1 10-ID, Drain Current(A)
RDS
(on) ,
Sta
tic D
rain
-Sou
rce
On-
Sta
teR
esis
tanc
e(mΩ)
V GS=-10V
V GS=-3VV GS=-3.5V
V GS=-4.5V
V GS=-4V
Reverse Drain Current vs Source-Drain Voltage
0.2
0.4
0.6
0.8
1
1.2
0 2 4 6 8 1
-IDR, Reverse Drain Current (A)
-VSD
, Sou
rce-
Dra
in V
olta
ge(V
)
0
Tj=25°C
Tj=150°C
V GS=0V
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
20
40
60
80
100
120
140
160
180
200
0 2 4 6 8 10
Drain-Source On-State Resistance vs Junction Tempearture
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-60 -20 20 60 100 140 180
Tj, Junction Temperature(°C)
RD
S(O
N), N
orm
aliz
ed S
tatic
Dra
in-
Sour
ce O
n-St
ate
Res
ista
nce
V GS=-4.5V, ID =-2.7A
V GS=-10V, I D =-3A
-VGS, Gate-Source Voltage(V)
R DS(
ON), S
tatic
Dra
in-S
ourc
e O
n-St
ate
Res
ista
nce(
mΩ
)
ID=-3A
ID=-2.7A
SMD Type
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MOSFET
.
P-Channel MOSFETKI2955DS
■ Typical CharacterisiticsCapacitance vs Drain-to-Source Voltage
10
100
1000
10000
0.1 1 10 100-VDS, Drain-Source Voltage(V)
Cap
acita
nce-
--(p
F)
Coss
Ciss
Crss
Threshold Voltage vs Junction Tempearture
0.4
0.6
0.8
1
1.2
1.4
-60 -40 -20 0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
-VG
S(th
), Nor
mal
ized
Thr
esho
ld V
olta
ge
ID=-250μA
Forward Transfer Admittance vs Drain Current
0.01
0.1
1
10
0.001 0.01 0.1 1 10-ID, Drain Current(A)
GFS
, For
war
d Tr
ansf
er A
dmitt
ance
-(S)
V DS=-10V
Pulsed
Ta=25°C
Gate Charge Characteristics
0
2
4
6
8
10
0 2 4 6 8 10 12 14 16
Qg, Total Gate Charge(nC)
-VG
S, G
ate-
Sour
ce V
olta
ge(V
)
ID=-3.5A
V DS=-48V
V DS=-30V
V DS=-15V
Maximum Safe Operating Area
0.01
0.1
1
10
100
0.01 0.1 1 10 100-VDS, Drain-Source Voltage(V)
-ID,
Dra
in C
urre
nt (A
)
DC
10ms
100ms
1ms
100μs
TA=25°C, Tj=150°CRθJA=78°C/W, VGS =-10VSingle Pulse
1s
R DS(ON)
Limit
Maximum Drain Current vs JunctionTemperature
0
0.5
1
1.5
2
2.5
3
3.5
4
25 50 75 100 125 150 175Tj, Junction Temperature(°C)
I D, M
axim
um D
rain
Cur
rent
(A)
TA =25°C, VGS=-10V, RθJA=78°C/W
SMD Type
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MOSFET
P-Channel MOSFETKI2955DS
■ Typical Characterisitics
Transient Thermal Response Curves
0.001
0.01
0.1
1
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
t1, Square Wave Pulse Duration(s)
r(t),
Nor
mal
ized
Effe
ctiv
eTra
nsie
nt T
herm
alR
esis
tanc
e
Single Pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
1.RθJA (t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=78°C/W