mosfet - farnell.com · 5 optimostm3 power-transistor, 100 v ipt020n10n3 final data sheet rev. 2.0,...
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MOSFETMetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTM3Power-Transistor,100VIPT020N10N3
DataSheetRev.2.0Final
PowerManagement&Multimarket
2
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
Rev.2.0,2014-02-17Final Data Sheet
Tab
12 3 4 5
86 7
HSOF
DrainTab
GatePin 1
SourcePin 2-8
1DescriptionFeatures•N-channel,normallevel•ExcellentgatechargexRDS(on)product(FOM)•Extremelylowon-resistanceRDS(on)•Highcurrentcapability•175°Coperatingtemperature•Pb-freeleadplating;RoHScompliant•QualifiedaccordingtoJEDEC1)fortargetapplication•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParametersParameter Value UnitVDS 100 V
RDS(on),max 2 mΩ
ID 300 A
Type/OrderingCode Package Marking RelatedLinksIPT020N10N3 PG-HSOF-8-1 020N10N3 -
1) J-STD20 and JESD22
3
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
Rev.2.0,2014-02-17Final Data Sheet
TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
Rev.2.0,2014-02-17Final Data Sheet
2MaximumratingsatTj=25°C,unlessotherwisespecified
Table2MaximumratingsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Continuous drain current ID --
--
300212 A TC=25°C1)
TC=100°C
Pulsed drain current 1) ID,pulse - - 1200 A TC=25°C
Avalanche energy, single pulse EAS - - 800 mJ ID=150A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot - - 375 W TC=25°C
Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category;DIN IEC 68-1: 55/175/56
3Thermalcharacteristics
Table3ThermalcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Thermal resistance junction - case RthJC - 0.2 0.4 K/W -
Thermal resistance junction - ambient,minimal footprint RthJA - - 62 K/W -
Thermal resistance junction - ambient,6 cm2 cooling area 2) RthJA - - 40 K/W -
1) See figure 3 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.PCB is vertical in still air.
5
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
Rev.2.0,2014-02-17Final Data Sheet
4Electricalcharacteristics
Table4StaticcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 100 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 2 2.7 3.5 V VDS=VGS,ID=272µA
Zero gate voltage drain current IDSS --
0.110
1100 µA VDS=100V,VGS=0V,Tj=25°C
VDS=100V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on)--
1.72.2
23.7 mΩ VGS=10V,ID=150A
VGS=6V,ID=75A,
Gate resistance RG - 1.9 2.9 Ω -
Transconductance gfs 125 250 - S |VDS|>2|ID|RDS(on)max,ID=150A
Table5DynamiccharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 11200 14896 pF VGS=0V,VDS=50V,f=1MHz
Output capacitance Coss - 2010 2673 pF VGS=0V,VDS=50V,f=1MHz
Reverse transfer capacitance Crss - 69 138 pF VGS=0V,VDS=50V,f=1MHz
Turn-on delay time td(on) - 34 - ns VDD=50V,VGS=10V,ID=100A,RG,ext=1.6Ω
Rise time tr - 58 - ns VDD=50V,VGS=10V,ID=100A,RG,ext=1.6Ω
Turn-off delay time td(off) - 84 - ns VDD=50V,VGS=10V,ID=100A,RG,ext=1.6Ω
Fall time tf - 18 - ns VDD=50V,VGS=10V,ID=100A,RG,ext=1.6Ω
Table6Gatechargecharacteristics1)Values
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 48 - nC VDD=50V,ID=100A,VGS=0to10V
Gate to drain charge Qgd - 27 - nC VDD=50V,ID=100A,VGS=0to10V
Switching charge Qsw - 42 - nC VDD=50V,ID=100A,VGS=0to10V
Gate charge total Qg - 156 207 nC VDD=50V,ID=100A,VGS=0to10V
Gate plateau voltage Vplateau - 4.3 - V VDD=50V,ID=100A,VGS=0to10V
Output charge Qoss - 55 - nC VDD=50V,VGS=0V
1) See ″Gate charge waveforms″ for parameter definition
6
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
Rev.2.0,2014-02-17Final Data Sheet
Table7ReversediodeValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Diode continous forward current IS - - 300 A TC=25°C
Diode pulse current IS,pulse - - 1200 A TC=25°C
Diode forward voltage VSD - 0.89 1 V VGS=0V,IF=150A,Tj=25°C
Reverse recovery time trr - 86 172 ns VR=50V,IF=IS,diF/dt=100A/µs
Reverse recovery charge Qrr - 232 - nC VR=50V,IF=IS,diF/dt=100A/µs
7
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
Rev.2.0,2014-02-17Final Data Sheet
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W
]
0 50 100 150 2000
50
100
150
200
250
300
350
400
450
Ptot=f(TC)
Diagram2:Draincurrent
TC[°C]
ID[A
]
0 50 100 150 2000
50
100
150
200
250
300
350
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
VDS[V]
ID[A
]
10-1 100 101 102 10310-1
100
101
102
103
104
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K
/W]
10-5 10-4 10-3 10-2 10-1 10010-2
10-1
100
0.5
0.2
0.1
0.05
0.02
0.01single pulse
ZthJC=f(tp);parameter:D=tp/T
8
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
Rev.2.0,2014-02-17Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 1 2 3 4 50
200
400
600
800
1000
1200
10 V
7.5 V
6 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
ID[A]
RDS(on
) [m
Ω]
0 200 400 600 800 1000 12000
1
2
3
4
5
6
4.5 V
5 V
6 V
7.5 V
10 V
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
VGS[V]
ID[A
]
0 2 4 6 80
200
400
600
800
1000
1200
175 °C 25 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.forwardtransconductance
ID[A]
gfs [S]
0 50 100 150 2000
50
100
150
200
250
300
gfs=f(ID);Tj=25°C
9
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
Rev.2.0,2014-02-17Final Data Sheet
Diagram9:Drain-sourceon-stateresistance
Tj[°C]
RDS(on
) [m
Ω]
-60 -20 20 60 100 140 1800
1
2
3
4
5
6
max
typ
RDS(on)=f(Tj);ID=150A;VGS=10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
VGS(th) [V]
-60 -20 20 60 100 140 1800.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2750 µA
275 µA
VGS(th)=f(Tj);VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
VDS[V]
C[p
F]
0 20 40 60 80 100101
102
103
104
105
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
IF [A]
0.0 0.5 1.0 1.5 2.0100
101
102
103
104
25 °C175 °C25 °C, 98%175 °C, 98%
IF=f(VSD);parameter:Tj
10
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
Rev.2.0,2014-02-17Final Data Sheet
Diagram13:Avalanchecharacteristics
tAV[µs]
IAS [A]
100 101 102 103100
101
102
103
25 °C
100 °C
150 °C
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
Diagram14:Typ.gatecharge
Qgate[nC]
VGS [V]
0 40 80 120 1600
2
4
6
8
10
80 V
50 V
20 V
VGS=f(Qgate);ID=100Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS
) [V]
-60 -20 20 60 100 140 18090
95
100
105
110
VBR(DSS)=f(Tj);ID=1mA
Gate charge waveforms
11
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
Rev.2.0,2014-02-17Final Data Sheet
6PackageOutlines
Z8B00169619
REVISION
ISSUE DATE
EUROPEAN PROJECTION
01
14-06-2013
DOCUMENT NO.
E5
E4
K1
e
MILLIMETERS
A
DIM
MIN MAX
INCHES
MIN MAX
b1
c
D
D2
E
E1
N
L
2.20 2.40 0.087 0.094
9.70
0.40
10.28
9.70
1.60
9.90
0.60
10.58
10.10
2.10
0.382
0.016
0.405
0.382
0.063
0.390
0.024
0.416
0.398
0.083
8 8
1.20 (BSC) 0.047 (BSC)
b 0.70 0.90 0.028 0.035
1) partially covered with Mold Flash
b2 0.42 0.50 0.017 0.020
H
H1
11.48 11.88 0.452 0.468
H2 7.15 0.281
H3 3.59 0.141
H4 3.26 0.128
L1 0.50 0.90 0.020 0.035
3.30 0.130
7.50 0.295
8.50 0.335
9.46 0.372
6.55 6.75 0.258 0.266
4.18 0.165
L4 1.00 1.30 0.039 0.051
L2 0.50 0.70 0.020 0.028
2
SCALE
0
4mm
0
2
Figure1OutlinePG-HSOF-8-1,dimensionsinmm/inches
12
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
Rev.2.0,2014-02-17Final Data Sheet
RevisionHistoryIPT020N10N3
Revision:2014-02-17,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2014-02-17 Release of final version
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