mosfet basics
TRANSCRIPT
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Transistors
These are three terminal devices, where the current or voltage at one terminal, the input terminal, controls the flow of current between the two remaining terminals.
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Transistors
Can be classified as: FET – Field Effect Transistor;
Majority carrier device; Unipolar device;
BJT – Bipolar Junction Transistor; Minority carrier device; Bipolar device.
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FETs
Two primary types: MOSFET, Metal-Oxide-Semiconductor FET.
Also known as IGFET – Insulated Gate FET; JFET, Junction FET.
MOS transistors can be: n-Channel;
Enhancement mode; Depletion mode;
p-Channel; Enhancement mode; Depletion mode;
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MOSFET Structure
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MOSFET
MOSFETs are identified by symbols like the ones shown below:
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MOSFET Operation
Voltage at gate controls the flow of current between drain and source.VGS – Voltage between gate and source.VDS – Voltage between drain and source.
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MOSFET Operation
When VGS = 0 then no current flows between drain and source.pn-Junction is reverse biased.
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Threshold Voltage
The value of VGS
where the drain current just begins to flow.Typical values: 0.3 to 0.8 volts.
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MOSFET Operation
Two cases: Ohmic region:
Active Region:
TGSDS V-VV
TGSDS V-VV
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MOSFET Operation
Ohmic Region:
0
VV
2
VVandV-VV
TGS
2
TGSTGSDS
D
DSDSTGSD
I
VVVVKI
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MOSFET Operation
Active Region:
0
VV
VVandV-VV
TGS
2
TGSTGSDS
D
TGSD
I
VVKI
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K Parameter
The constant K, called the conductance parameter, is measured in units of mA/V2.
Where:
L
WCK oxe
2
1
ox
oxox t
C
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MOSFET Output Curves
A family of curves representing the V-I characteristics of transistors.A plot of drain current, ID, as a function of drain-to-source voltage, VDS, for several values of VGS.
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Ohmic and Active Regions
0
VV
2
VVandV-VV
TGS
2
TGSTGSDS
D
DSDSTGSD
I
VVVVKI
0
VV
VVandV-VV
TGS
2
TGSTGSDS
D
TGSD
I
VVKI
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P-Channel Enhancement MOSFET
Note the n-type body and the p-type source and drain areas.Both VGS and VDD are negative with respect to ground.
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Depletion Mode MOSFETs
n-Channel is built in.VGS varies from negative values to positive values, where negative values of VGS depletes the channel while positive values enhance it further.
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JFETs
Depletion-mode FET with a different structure than that of the MOSFET.Not generally used for switching elements of digital circuits.Used in special applications such as analog circuits where very high input impedance is required.
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JFETs
Every p-n junction has a depletion region devoid of carriers, and the width of the depletion region can be controlled by the applied voltage across the junction.
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JFETs
Note the highest value of VGS.
What happens if you make VGS positive with respect to ground.
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Inverter Circuit
This circuit is designated as the common source configuration. It is used in digital circuits.
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Inverter Circuit
When Vin is low the transistor is off and Vout is high.When Vin is high the transistor is on and Vout is low.
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MOSFET Circuit Model For Switching
VGS controls the switch in the model and ron is defined as:
TGSon
VDS
Donon
VVKr
VIg
r
DS
2
1
11
0
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Inverter Circuit
ToutLon
DDLon
onout
DDin
DDout
in
VVRr
VRr
rV
VV
VV
V
,
0
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Inverter Circuit
For RL = 1KΩ, and VDD=5V.
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Large Signal Amplifiers
DC biasing: Ensuring that the transistor has the
correct dc level at its terminals. Termed as setting the Q-point,
quiescent operating bias point. Same as setting the dc voltages and
currents for the circuit with no signal applied.
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Large Signal Amplifiers
The dc bias voltages and currents must be maintained even when the circuit is confronted with: Sources variations; Temperature changes; Change in component values due to
manufacturing process inconsistencies.
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Common Source Amplifier
DSDDDD
DDGS
VRIV
RR
RVV
21
2
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Common Source Amplifier
i
ov v
vA
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Self-Bias Circuit
Useful for devices that require a negative gate-to-source voltage (depletion mode n-channel devices).Negative gate-to-source voltages are achieved by raising the source voltage higher than the gate voltage.
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Self-Bias Circuit
DSSDDDD
SDGS
SDS
VRRIV
RIV
RIV
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Self-Bias Circuit
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Procedure
Draw load line on the output curves of the transistor.Locate the Q-point on the load line.If there is a bypass capacitor in the circuit, then construct an ac load line with slope:
Calculate the large signal voltage gain.
CS-Dslope
by shortednot loop within resistance total
1
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Other FET Configurations
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BJTs
Invented in 1947 in the Bell Laboratories.It revolutionized electronics, by replacing the vacuum tubes.Standard for the TTL (Transistor-Transistor-Logic) and ECL (Emitter-Coupled-Logic) families of logic devices.
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BJT Structure
Three-layer sandwich of alternating semiconductor materials.Two types:
NPN; PNP.
Terminals: Emitter; Base; Collector.
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BJT Structure
Two p –n junction diodes built very close together.The junction between base and emitter is called emitter junction, and the junction between base and collector is called collector junction.
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BJT Structure
The emitter is placed on top of the collector with a very thin base between them, and the primary carrier flow is from the emitter to the collector.
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Modes of Operation
Cutoff – Both junctions are reverse biased and the transistor appears as an open switch.Saturation – Both junctions are forward biased and the transistor appears as a closed switch.These two bias conditions are important for digital circuits.
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BJT Working as a Switch
Note the simplified interpretation of the BJT working as a switch in cutoff and saturation.
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BJT Models for Switching
IB(SAT) - the minimum base current to be exceeded for the transistor to be considered in saturation mode.
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Modes of Operation
Active – The emitter junction is forward biased and the collector junction is reverse biased.Reverse active – The emitter junction is reverse biased and the collector junction is forward biased.
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Active Region
regionactiveE
CF I
I
ratio.ansfer current tr base commom Forward
alpha Forward
CBE III
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Active Region
FF
F
regionactiveB
C
BFFC
BFCFC
CFBFC
CBFC
EFC
I
I
II
III
III
III
II
1
1
ratio.ansfer current tremitter common Forward
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Ebers-Moll Model
biasactivereverseC
ER I
I
ratio.ansfer current tr base commom Reverse
alpha Reverse
1
1
'
'
kT
qV
CSC
kT
qV
ESE
BC
BE
eII
eII
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Ebers-Moll Model
1
1
'
'
kT
qV
CSC
kT
qV
ESE
BC
BE
eII
eII
11
11
kT
qV
ESFkT
qV
CSC
kT
qV
CSRkT
qV
ESE
BEBC
BCBE
eIeII
eIeII
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Common Emitter Amplifier
CECCCC
C
B
BECCB
VRIV
I
R
VVI
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Common Source Amplifier
Non-linear.Large variations in beta.Thermal runaway.
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Self-Bias Circuit
Useful to control the effects discussed in the previous slide. This circuit stabilizes collector current instead of base current, thus reducing the effects of beta variations and temperature on the quiescent operating point.Collector current is determined by the voltage across a resistor, RE, placed in series with the emitter.
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Self-Bias Circuit
EEBECCB
EB
CC
RIVRR
RVV
II
RR
V
21
2
21 1
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Procedure
Draw load line on the output curves of the transistor.Locate the Q-point on the load line.If there is a bypass capacitor in the circuit, then construct an ac load line with slope:
Calculate the large signal voltage gain.
CS-Dslope
by shortednot loop within resistance total
1
![Page 51: Mosfet Basics](https://reader035.vdocuments.mx/reader035/viewer/2022081716/54657e2daf795979338b4dfc/html5/thumbnails/51.jpg)
Other BJT Configurations