modeling of manufacturing of a fieldeffect
DESCRIPTION
MODELING OF MANUFACTURING OF A FIELDEFFECTTRANSISTOR TO DETERMINE CONDITIONSTO DECREASE LENGTH OF CHANNELTRANSCRIPT
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Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015
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MODELING OF MANUFACTURING OF A FIELD-
EFFECT TRANSISTOR TO DETERMINE CONDITIONS
TO DECREASE LENGTH OF CHANNEL
E.L. Pankratov1, E.A. Bulaeva2
1Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950, Russia
2 Nizhny Novgorod State University of Architecture and Civil Engineering, 65 Il'insky
street, Nizhny Novgorod, 603950, Russia
ABSTRACT
In this paper we introduce an approach to model technological process of manufacture of a field-effect heterotransistor. The modeling gives us possibility to optimize the technological process to decrease length of channel by using mechanical stress. As accompanying results of the decreasing one can find decreasing of thickness of the heterotransistors and increasing of their density, which were comprised in integrated circuits.
KEYWORDS
Modelling of manufacture of a field-effect heterotransistor, Accounting mechanical stress; Optimization the technological process, Decreasing length of channel
1. INTRODUCTION
One of intensively solved problems of the solid-state electronics is decreasing of elements of in-tegrated circuits and their discrete analogs [1-7]. To solve this problem attracted an interest wide-ly used laser and microwave types of annealing [8-14]. These types of annealing leads to genera-tion of inhomogeneous distribution of temperature. In this situation one can obtain increasing of sharpness of p-n-junctions with increasing of homogeneity of dopant distribution in enriched area [8-14]. The first effects give us possibility to decrease switching time of p-n-junction and value of local overheats during operating of the device or to manufacture more shallow p-n-junction with fixed maximal value of local overheat. An alternative approach to laser and microwave types of annealing one can use native inhomogeneity of heterostructure and optimization of annealing of dopant and/or radiation defects to manufacture diffusive junction and implanted-junction rectifi-ers [12-18]. It is known, that radiation processing of materials is also leads to modification of dis-tribution of dopant concentration [19]. The radiation processing could be also used to increase of sharpness of p-n-junctions with increasing of homogeneity of dopant distribution in enriched area [20, 21]. Distribution of dopant concentration is also depends on mechanical stress in heterostruc-ture [15].
In this paper we consider a field-effect heterotransistor. Manufacturing of the transistor based on combination of main ideas of Refs. [5] and [12-18]. Framework the combination we consider a
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Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015
32
heterostructure with a substrate and an epitaxial layer with several sections. Some dopants have been infused or implanted into the section to produce required types of conductivity. Farther we consider optimal annealing of dopant and/or radiation defects. Manufacturing of the transistor has been considered in details in Ref. [17]. Main aim of the present paper is analysis of influence of mechanical stress on length of channel of the field-effect transistor.
Fig. 1. Heterostructure with substrate and epitaxial layer with two or three sections
a1
a2-a
1L
x-a
2-a
1
c1 c1
c2
oxidesource drain
gate
c3
Fig. 2. Heterostructure with substrate and epitaxial layer with two or three sections. Sectional view
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2. METHOD OF SOLUTION
To solve our aim we determine spatio-temporal distribution of concentration of dopant in the con-sidered heterostructure and make the analysis. We determine spatio-temporal distribution of con-centration of dopant with account mechanical stress by solving the second Ficks law [1-4,22,23]
( ) ( ) ( ) ( )+
+
+
=
z
tzyxCD
zytzyxC
Dyx
tzyxCD
xt
tzyxC ,,,,,,,,,,,, (1)
( ) ( ) ( ) ( )
+
+zz L
SS
L
SS WdtWyxCtzyx
TkD
yWdtWyxCtzyx
TkD
x 00,,,,,,,,,,,,
with boundary and initial conditions ( ) 0,,,
0
=
=xx
tzyxC,
( ) 0,,, =
= xLx
x
tzyxC,
( ) 0,,,0
=
=yy
tzyxC,
( ) 0,,, =
= yLx
ytzyxC
,
( ) 0,,,0
=
=zz
tzyxC,
( ) 0,,, =
= zLx
z
tzyxC, C (x,y,z,0)=fC(x,y,z).
Here C(x,y,z,t) is the spatio-temporal distribution of concentration of dopant; is the atomic vo-lume; S is the operators of surficial gradient; ( )zL zdtzyxC
0,,, is the surficial concentration of
dopant on interface between layers of heterostructure; (x,y,z,t) is the chemical potential; D and DS are coefficients of volumetric and surficial (due to mechanical stress) of diffusion. Values of the diffusion coefficients depend on properties of materials of heterostructure, speed of heating and cooling of heterostructure, spatio-temporal distribution of concentration of dopant. Concen-traional dependence of dopant diffusion coefficients have been approximated by the following relations [24]
( ) ( )( )
+=
TzyxPtzyxCTzyxDD L
,,,
,,,1,,,
, ( ) ( )( )
+=
TzyxPtzyxCTzyxDD SLSS
,,,
,,,1,,,
. (2)
Here DL (x,y,z,T) and DLS (x,y,z,T) are spatial (due to inhomogeneity of heterostructure) and tem-perature (due to Arrhenius law) dependences of dopant diffusion coefficients; T is the temperature of annealing; P
(x,y,z,T) is the limit of solubility of dopant; parameter could be integer in the following interval
[1,3] [24]; V
(x,y,z,t) is the spatio-temporal distribution of concentration of radiation of vacancies; V* is the equilibrium distribution of vacancies. Concentrational depen-dence of dopant diffusion coefficients has been discussed in details in [24]. Chemical potential could be determine by the following relation [22]
=E(z)ij[uij(x,y,z,t)+uji(x,y,z,t)]/2, (3)
where E is the Young modulus; ij is the stress tensor;
+
=
i
j
j
iij
x
u
x
uu
21
is the deformation
tensor; ui, uj are the components ux(x,y,z,t), uy(x,y,z,t) and uz(x,y,z,t) of the displacement vector ( )tzyxu ,,,r ; xi, xj are the coordinates x, y, z. Relation (3) could be transform to the following form
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34
( ) ( ) ( ) ( ) ( )
+
+
=
i
j
j
i
i
j
j
i
x
tzyxux
tzyxux
tzyxux
tzyxutzyx
,,,,,,
21,,,,,,
,,,
( ) ( ) ( )( ) ( ) ( ) ( )[ ]
+
ijk
kijij TtzyxTzzK
x
tzyxuz
zzE
000 ,,,3,,,
212,
where is the Poisson coefficient; 0=(as-aEL)/aEL is the mismatch strain; as, aEL are the lattice spacings for substrate and epitaxial layer, respectively; K is the modulus of uniform compression; is the coefficient of thermal expansion; Tr is the equilibrium temperature, which coincide (for our case) with room temperature. Components of displacement vector could be obtained by solv-ing of the following equations [23]
( ) ( ) ( ) ( ) ( )
( ) ( ) ( ) ( ) ( )
( ) ( ) ( ) ( ) ( )
+
+
=
+
+
=
+
+
=
z
tzyxy
tzyxx
tzyxt
tzyxuz
z
tzyxy
tzyxx
tzyxt
tzyxuz
z
tzyxy
tzyxx
tzyxt
tzyxuz
zzzyzxz
yzyyyxy
xzxyxxx
,,,,,,,,,,,,
,,,,,,,,,,,,
,,,,,,,,,,,,
2
2
2
2
2
2
where ( )( )[ ]( ) ( ) ( ) ( )
+
+
+
=
k
kij
k
kij
i
j
j
iij
x
tzyxux
tzyxux
tzyxux
tzyxuz
zE ,,,,,,3
,,,,,,
12
( ) ( ) ( ) ( )[ ]r
TtzyxTzKzzK ,,, , (z) is the density of materials, ij is the Kronecker sym-bol. With account of the relation the last system of equation takes the form
( ) ( ) ( ) ( )( )[ ]( ) ( ) ( )( )[ ]
( )+
++
++=
yxtzyxu
z
zEzK
x
tzyxuz
zEzK
t
tzyxuz
yxx,,,
13,,,
165,,, 2
2
2
2
2
( )( )[ ]
( ) ( ) ( ) ( )( )[ ]( ) ( )
+++
+
+
+ zKzx
tzyxuz
zEzK
z
tzyxuy
tzyxuz
zE zzy ,,,13
,,,,,,
12
2
2
2
2
2
( ) ( )x
tzyxTz
,,,
( ) ( ) ( )( )[ ]( ) ( ) ( ) ( ) ( ) +
+
+
=
ytzyxT
zKzyx
tzyxux
tzyxuz
zEt
tzyxuz x
yy ,,,,,,,,,
12,,,
2
2
2
2
2
( )( )[ ]
( ) ( ) ( )( )[ ] ( )
( )+
++
+
+
+
+ 2
2,,,
1125,,,,,,
12 ytzyxu
zKz
zEy
tzyxuz
tzyxuz
zEz
yzy
( ) ( )( )[ ]( ) ( ) ( )
yxtzyxu
zKzy
tzyxuz
zEzK yy
+
++
,,,,,,
16
22
(4)
( ) ( ) ( ) ( ) ( ) ( )
+
+
+
=
zytzyxu
zx
tzyxuy
tzyxux
tzyxut
tzyxuz
yxzzz,,,,,,,,,,,,,,,
22
2
2
2
2
2
2
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( )( )[ ] ( )
( ) ( ) ( ) ( )
+
+
++
z
tzyxTz
tzyxuy
tzyxux
tzyxuzK
zz
zE xyx ,,,,,,,,,,,,12
( ) ( ) ( )( )( ) ( ) ( ) ( )
+
+z
tzyxuy
tzyxux
tzyxuz
tzyxuz
zEz
zzK zyxz,,,,,,,,,,,,6
161
.
Conditions for the displacement vector could be written as ( ) 0,,,0 =
x
tzyur
; ( ) 0,,, =
x
tzyLu xr
; ( ) 0,,0, =
y
tzxur
; ( )
0,,,
=
ytzLxu y
r
;
( ) 0,0,, =
z
tyxur
; ( ) 0,,, =
z
tLyxu zr
; ( ) 00,,, uzyxu rr = ; ( ) 0,,, uzyxu rr = .
Farther let us analyze spatio-temporal distribution of temperature during annealing of dopant. We determine spatio-temporal distribution of temperature as solution of the second law of Fourier [25]
( ) ( ) ( ) ( ) ( ) +
+
+
=
z
tzyxTzy
tzyxTyx
tzyxTxt
tzyxTTc ,,,,,,,,,,,,
( )tzyxp ,,,+ (5)
with boundary and initial conditions ( ) 0,,,
0
=
=xx
tzyxT,
( ) 0,,, =
= xLx
x
tzyxT,
( ) 0,,,0
=
=yy
tzyxT,
( ) 0,,, =
= yLx
ytzyxT
,
( ) 0,,,0
=
=zz
tzyxT,
( ) 0,,, =
= zLx
z
tzyxT, T (x,y,z,0)=fT (x,y,z).
Here is the heat conduction coefficient. Value of the coefficient depends on materials of hetero-structure and temperature. Temperature dependence of heat conduction coefficient in most inter-est area could be approximated by the following function: (x,y,z,T)=ass(x,y,z)[1+ Td/ T(x,y,z,t)] (see, for example, [25]). c(T)=cass[1- exp(-T(x,y,z,t)/Td)] is the heat capacitance; Td is the Debye temperature [25]. The temperature T(x,y,z,t) is approximately equal or larger, than Debye temperature Td for most interesting for us temperature interval. In this situation one can write the following approximate relation: c(T)cass. p(x,y,z,t) is the volumetric density of heat, which escapes in the heterostructure. Framework the paper it is attracted an interest microwave annealing of dopant. This approach leads to generation inhomogenous distribution of temperature [12-14,26]. Such distribution of temperature gives us possibility to increase sharpness of p-n-junctions with increasing of homogeneity of dopant distribution in enriched area. In this situation it is practicably to choose frequency of electro-magnetic field. After this choosing thickness of scin-layer should be approximately equal to thickness of epitaxial layer.
First of all we calculate spatio-temporal distribution of temperature. We calculate spatio-temporal distribution of temperature by using recently introduce approach [15, 17,18]. Framework the ap-proach we transform approximation of thermal diffusivity
ass(x,y,z) =ass(x,y,z)/cass =0ass[1+T gT(x,y,z)]. Farther we determine solution of Eqs. (5) as the following power series
( ) ( ) = =
=0 0,,,,,,
i j ijji
T tzyxTtzyxT . (6)
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Substitution of the series into Eq.(6) gives us possibility to obtain system of equations for the ini-tial-order approximation of temperature T00(x,y,z,t) and corrections for them Tij(x,y,z,t) (i1, j1). The equations are presented in the Appendix. Substitution of the series (6) in boundary and initial conditions for spatio-temporal distribution of temperature gives us possibility to obtain boundary and initial conditions for the functions Tij(x,y,z,t) (i0, j0). The conditions are presented in the Appendix. Solutions of the equations for the functions Tij(x,y,z,t) (i0, j0) have been obtain as the second-order approximation on the parameters and by standard approaches [28,29] and presented in the Appendix. Recently we obtain, that the second-order approximation is enough good approximation to make qualitative analysis and to obtain some quantitative results (see, for example, [15,17,18]). Analytical results have allowed to identify and to illustrate the main depen-dence. To check our results obtained we used numerical approaches.
Farther let us estimate components of the displacement vector. The components could be obtained by using the same approach as for calculation distribution of temperature. However, relations for components could by calculated in shorter form by using method of averaging of function correc-tions [12-14,16,27]. It is practicably to transform differential equations of system (4) to integro-differential form. The integral equations are presented in the Appendix. We determine the first-order approximations of components of the displacement vector by replacement the required functions u(x,y,z,t) on their average values u1. The average values u1 have been calculated by the following relations
us1=Ms1/4L, (7)
where ( ) = 0 0
,,,
x
x
y
y
zL
L
L
L
L
isis tdxdydzdtzyxuM . The replacement leads to the following results
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
=
t zz
xdwd
x
wyxTwwKtdwd
x
wyxTwwKttzyxu
0 00 01
,,,,,,
,,,
( )] 101 ,,, uxxux twyx + , ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
=
t zz
y dwdywyxT
wwKtdwdy
wyxTwwKttzyxu
0 00 01
,,,,,,
,,,
( )] 101 ,,, uyyuy twyx + , ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
=
t zz
z dwdw
wyxTwwKtdwd
w
wyxTwwKttzyxu
0 00 01
,,,,,,
,,,
( )] 101 ,,, zzuz twyx + .
Substitution of the above relations into relations (7) gives us possibility to obtain values of the parameters u1. Appropriate relations could be written as
( ) ( )[ ]( ) ( )
=
zL
z
xxz
ux
zdzzLL
L
0
3
201
8 ,
( ) ( )[ ]( ) ( )
=
zL
z
yyzuy
zdzzLL
L
0
3
201
8 ,
( ) ( )[ ]( ) ( )
=
zL
z
zzz
uz
zdzzLL
L
0
3
201
8 ,
where ( ) ( ) ( ) ( ) ( )
+=
0 0
,,,1x
x
y
y
zL
L
L
L
L
z
i
is dxdydzds
zyxTzzKzLt .
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The second-order approximations of components of the displacement vector by replacement of the required functions u(x,y,z,t) on the following sums us2+us1(x,y,z,t), where us2=(Mus2-Mus1)/ 4L3. Results of calculations of the second-order approximations us2(x,y,z,t) and their average values us2 are presented in the Appendix, because the relations are bulky.
Spatio-temporal distribution of concentration of dopant we obtain by solving the Eq.(1). To solve the equations we used recently introduce approach [15,17,18] and transform approximations of dopant diffusion coefficients DL (x,y,z,T) and DSL (x,y,z, T) to the following form: DL(x,y,z,T)=D0L[1+ L gL(x,y,z,T)] and DSL(x,y,z,T)=D0SL[1+ SLgSL(x,y,z,T)]. We also introduce the following dimensionless parameter: = D0SL/ D0L. In this situation the Eq.(1) takes the form
( ) ( )[ ] ( )( )( ) ( )
+
++
=
ytzyxC
yxtzyxC
TzPtzyxCTzg
xD
t
tzyxCLLL
,,,,,,
,
,,,1,1,,, 0
( )[ ] ( )( ) ( )[ ]( )( )
++
+
++
TzyxPtzyxCTzyxg
zDD
TzyxPtzyxCTzg LLLLLL
,,,
,,,1,,,1,,,
,,,1,1 00
( ) ( )[ ] ( )( ) ( )
++
+
zL
SLSLSL WdtWyxCTzPtzyxCTzg
xD
z
tzyxC0
0 ,,,,
,,,1,1,,,
(8) ( ) ( )
( )( ) ( )
+
+
zL
SSLL
S WdtWyxCTk
tzyxTzP
tzyxCy
DDTk
tzyx0
00 ,,,,,,
,
,,,1,,,
.
We determine solution of Eq.(1) as the following power series
( ) ( ) = =
=
=0 0 0,,,,,,
i j k ijkkji
L tzyxCtzyxC . (9)
Substitution of the series into Eq.(8) gives us possibility to obtain systems of equations for initial-order approximation of concentration of dopant C000(x,y,z,t) and corrections for them Cijk(x, y,z,t) (i 1, j 1, k 1).The equations are presented in the Appendix. Substitution of the series into ap-propriate boundary and initial conditions gives us possibility to obtain boundary and initial condi-tions for all functions Cijk(x,y,z,t) (i 0, j 0, k 0). Solutions of equations for the functions Cijk(x,y,z,t) (i 0, j 0, k 0) have been calculated by standard approaches [28,29] and presented in the Appendix.
Analysis of spatio-temporal distributions of concentrations of dopant and radiation defects has been done analytically by using the second-order approximations framework recently introduced power series. The approximation is enough good approximation to make qualitative analysis and to obtain some quantitative results. All obtained analytical results have been checked by compari-son with results, calculated by numerical simulation.
3. DISCUSSION
In this section we analyzed redistribution of dopant under influence of mechanical stress based on relations calculated in previous section. Fig. 3 show spatio-temporal distribution of concentration of dopant in a homogenous sample (curve 1) and in heterostructure with negative and positive value of the mismatch strain 0 (curve 2 and 3, respectively). The figure shows, that manufactur-ing field-effect heterotransistors gives us possibility to make more compact field-effect transistors in direction, which is parallel to interface between layers of heterostructure. As a consequence of
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Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015
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the increasing of compactness one can obtain decreasing of length of channel of field- effect tran-sistor and increasing of density of the transistors in integrated circuits. It should be noted, that presents of interface between layers of heterostructure give us possibility to manufacture more thin transistors [17].
x, y
C(x,
), C(y,
)
2
3
1
Fig. 3. Distributions of concentration of dopant in directions, which is perpendicular to interface between layers of heterostructure. Curve 1 is a dopant distribution in a homogenous sample. Curve 2 corresponds to
negative value of the mismatch strain. Curve 3 corresponds to positive value of the mismatch strain
4. CONCLUSION
In this paper we consider possibility to decrease length of channel of field-effect transistor by us-ing mechanical stress in heterostructure. At the same time with decreasing of the length it could be increased density of transistors in integrated circuits.
ACKNOWLEDGEMENTS
This work is supported by the contract 11.G34.31.0066 of the Russian Federation Government, Scientific School of Russia SSR-339.2014.2 and educational fellowship for scientific research.
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APPENDIX
Equations for functions Tij(x,y,z,t) (i0, j0)
( ) ( ) ( ) ( ) ( )ass
ass
tzyxpz
tzyxTy
tzyxTx
tzyxTt
tzyxT
,,,,,,,,,,,,,,,
200
2
200
2
200
2
000 +
+
+
=
( ) ( ) ( ) ( )+
+
+
=
20
2
20
2
20
2
00 ,,,,,,,,,,,,
z
tzyxTy
tzyxTx
tzyxTt
tzyxT iiiass
i
( ) ( ) ( ) ( ) ( ) ( )
+
+
+ z
tzyxTzg
zytzyxT
xgx
tzyxTzg iT
iT
iTass
,,,,,,,,, 102
102
210
2
0 , i 1
-
Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015
40
( ) ( ) ( ) ( )( ) +
+
+
=
tzyxTT
z
tzyxTy
tzyxTx
tzyxTt
tzyxT dassass
,,,
,,,,,,,,,,,,
00
02
012
201
2
201
2
001
( ) ( ) ( )( )
( )
+
+
+
2
00
00
02
002
200
2
200
2,,,
,,,
,,,,,,,,,
x
tzyxTtzyxT
Tz
tzyxTy
tzyxTx
tzyxT dass
( ) ( )
+
+
2
00
2
00 ,,,,,,
z
tzyxTy
tzyxT
( ) ( ) ( ) ( )( )+
+
+
=
tzyxTT
z
tzyxTy
tzyxTx
tzyxTt
tzyxT dassass
,,,
,,,,,,,,,,,,
00
02
022
202
2
202
2
002
( ) ( ) ( )( )
( )
+
+
+ x
tzyxTtzyxT
Tz
tzyxTy
tzyxTx
tzyxT dass ,,,,,,
,,,,,,,,, 001
00
02
012
201
2
201
2
( ) ( ) ( ) ( ) ( )
+
+
z
tzyxTz
tzyxTy
tzyxTy
tzyxTx
tzyxT ,,,,,,,,,,,,,,, 0100010001
( ) ( ) ( )( ) ( )
( ) ( )
+
+
=
Tzyxgx
tzyxTTzyxg
tzyxTtzyxT
x
tzyxTt
tzyxTTTass ,,,
,,,
,,,
,,,
,,,,,,,,,
200
2
00
012
112
011
( ) ( ) ( ) ( ) ( )
+
+
+
x
tzyxTTzyxg
xz
tzyxTTzyxg
zytzyxT
TassT
,,,
,,,
,,,
,,,
,,, 010
002
002
( ) ( )[ ] ( ) ( )[ ] ( ) +
++
++
+assTT
z
tzyxTTzyxg
ytzyxT
Tzyxgx
tzyxT02
012
201
2
201
2,,,
,,,1,,,
,,,1,,,
( )( )
( ) ( )( )
( ) ( )( )
( )
+
+
++++ 2
002
100
102
002
100
102
002
100
10 ,,,
,,,
,,,,,,
,,,
,,,,,,
,,,
,,,
z
tzyxTtzyxT
tzyxTy
tzyxTtzyxT
tzyxTx
tzyxTtzyxT
tzyxT
( )( ) ( ) ( )
( ) +
+
+
+tzyxT
Tz
tzyxTy
tzyxTx
tzyxTtzyxT
TT dassdassdass,,,
,,,,,,,,,
,,, 00
02
102
210
2
210
2
00
00
( ) ( ) ( ) ( ) ( ) ( )
+
+
z
tzyxTTzyxgzy
tzyxTTzyxgx
tzyxTTzyxg TTT,,,
,,,
,,,
,,,
,,,
,,,00
210
2
210
2
( ) ( ) ( ) ( ) ( ) ( )
+
+
z
tzyxTz
tzyxTy
tzyxTy
tzyxTx
tzyxTx
tzyxT ,,,,,,,,,,,,,,,,,, 001000100010
( )( )( )
( ) ( ) ( )
+
+
++
2
002
002
001
001
00
0 ,,,,,,,,,
,,,
,,,
,,, z
tzyxTy
tzyxTx
tzyxTtzyxT
TzyxgtzyxT
T Tdass
dass T0 . Conditions for the functions Tij(x,y,z,t) (i0, j0) ( )
0,,,
0
=
=x
ij
x
tzyxT,
( )0
,,,
=
= xLx
ij
x
tzyxT,
( )0
,,,
0
=
=y
ij
ytzyxT
,
( )0
,,,
=
= yLx
ij
ytzyxT
,
( )0
,,,
0
=
=z
ij
z
tzyxT,
( )0
,,,
=
= zLx
ij
z
tzyxT, T00(x,y,z,0)=fT(x,y,z), Tij(x,y,z,0)=0, i 1, j 1.
Solutions of the equations for the functions Tij(x,y,z,t) (i0, j0) with account appropriate boun-dary and initial conditions could be written as
-
Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015
41
( ) ( ) ( ) ( ) ( ) ( ) ( ) + = =1 00 0 0
002
,,
1,,,
n
L
nnTnnnzyx
L L L
Tzyx
xx y z
uctezcycxcLLL
udvdwdwvufLLL
tzyxT
( ) ( ) ( ) ( ) + + zyx
t L L L
asszyx
L L
Tnn LLLdudvdwdwvup
LLLudvdwdwvufwcvc x
y zy z 2,,,1,,
0 0 0 00 0
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) =1 0 0 0 0
,,,
n
t L L L
ass
nnnnTnTnnn
x y z
dudvdwdwvupwcvcucetezcycxc
,
where cn() = cos (pi n/L), ( )
++= 2220
22 111expzyx
assnT LLLtnte pi ;
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) = =1 0 0 0 0
20
0 ,,,2,,,n
t L L L
TnnnnTnTnnnzyx
ass
i
x y z
TwvugwcvcusetezcycxcnLLL
tzyxT pi
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) +
=
1 0 0 02010 2,,,
n
t L L
nnnTnTnnnzyx
assix y
vsucetezcycxcnLLL
dudvdwdu
wvuT
pi
( ) ( ) ( ) ( ) ( ) ( ) ( )+
=
12
0
0
10 2,,,,,,n
nTnnnzyx
assL
inT tezcycxcnLLL
dudvdwdv
wvuTwcTwvug
z pi
( ) ( ) ( ) ( ) ( ) ( )
t L L L
iTnnnnT
x y z
dudvdwdw
wvuTTwvugwsvcuce
0 0 0 0
10 ,,,,,,
, i 1,
where sn() = sin (pi n /L); ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
=
=1 0 0 0 02
002
2001,,,2
,,,
n
t L L L
nnnTnTnnnzyx
dass
x y z
u
wvuTvcusetezcycxcn
LLLT
tzyxT
pi
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) +
=1 0 0 0 020
00
2,,, n
t L L L
nnnnTnTnnnzyx
dassn
x y z
wcvsucetezcycxcnLLL
TwvuT
dudvdwdwc
pi
( )( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) +
=1 0 0 020
002
002 2
,,,
,,,
n
t L L
nnnTnTnnnzyx
dass
x y
vcucetezcycxcnLLL
TwvuT
dudvdwdv
wvuT
pi
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
=1 0 0
0
0 002
002
2,,,
,,,
n
t L
nnTnTnnnzyx
ass
d
L
n
xz
ucetezcycxcLLL
TwvuT
dudvdwdu
wvuTws
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
=
+1 0
0
0 01
00
2
00 2,,,
,,,
n
t
nTnTnnnzyx
dassL L
nnetezcycxc
LLLT
wvuTdudvdwd
u
wvuTwcvc
y z
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
=
+1
0
0 0 01
00
2
00 2,,,
,,,
nnTnnn
zyx
ass
d
L L L
nnntezcycxc
LLLT
wvuTdudvdwd
v
wvuTwcvcuc
x y z
( ) ( ) ( ) ( ) ( ) ( )
+
t L L L
nnnnT
x y z
wvuTdudvdwd
w
wvuTwcvcuce
0 0 0 01
00
2
00
,,,
,,,
;
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
=
=1 0 0 0 02
012
2002,,,2
,,,
n
t L L L
nnnTnTnnnzyx
dass
x y z
u
wvuTvcusetezcycxcn
LLLT
tzyxT
pi
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) +
=1 0 0 0 020
00
2,,, n
t L L L
nnnnTnTnnnzyx
dassn
x y z
wcvsucetezcycxcnLLL
TwvuT
dudvdwdwc
pi
( )( ) ( ) ( ) ( ) ( ) ( ) ( ) +
=1 0 020
002
012 2
,,,
,,,
n
t L
nnTnTnnnzyx
dass
x
ucetezcycxcnLLL
TwvuT
dudvdwdv
wvuT
pi
-
Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015
42
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
=1 02
0
0 0 002
012
2,,,
,,,
n
t
nTnTnnnzyx
ass
L L
nnetezcycxc
LLLwvuTdudvdwd
w
wvuTwsvc
y z
pi
( ) ( ) ( ) ( ) ( ) ( ) ( )
=
+1
20
0 0 01
00
0100 2,,,
,,,,,,
nn
zyx
ass
d
L L L
nnnd xcLLLT
wvuTdudvdwd
u
wvuTu
wvuTwcvcucT
x y z pi
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
+
t L L L
nnnnTnTnn
x y z
wvuTdudvdwd
v
wvuTv
wvuTwcvcucetezcyc
0 0 0 01
00
0100
,,,
,,,,,,
( ) ( ) ( ) ( ) ( ) ( ) ( )
=
+10 0 0 0
100
01002
0
,,,
,,,,,,2n
t L L L
nnnnTzyx
assdx y z
wvuTdudvdwd
w
wvuTw
wvuTwcvcuce
LLLT
pi
( ) ( ) ( ) ( )tezcycxc nTnnn ; ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
=
=1 0 0 0 02
002
011
,,,2,,,
n
t L L L
nnnnTnTnnnzyx
assx y z
w
wvuTwcvcucetezcycxc
LLLtzyxT
( ) ( ) ( ) ( ) ( ) ( )( ) +
+
+
dudvdwdwvuTwvuT
w
wvuTwg
wv
wvuTTwvugTwvug TTT,,,
,,,,,,,,,
,,,,,,
00
01002
002
( ) ( )[ ] ( ) ( ) ( ) +
+
++
dudvdwd
w
wvuTTwvug
wv
wvuTTwvug
u
wvuTTT
,,,
,,,
,,,
,,,1,,, 01
201
2
201
2
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )( )( )
+
+
=
+1 0 0 0 0
200
2
100
100 ,,,
,,,
,,,
2n
t L L L
nnnTnTnnnzyx
dassx y z
u
wvuTwvuT
wvuTvcucetezcycxc
LLLT
( )( )
( ) ( )( )
( ) ( ) +
+
++yx
ass
n LLdudvdwdwc
w
wvuTwvuT
wvuTv
wvuTwvuT
wvuT 02
002
100
102
002
100
10 ,,,
,,,
,,,,,,
,,,
,,,
( ) ( ) ( ) ( ) ( ) ( ) ( )
+
+
=1 0 0 0 02
102
210
2
210
2,,,,,,,,,
2n
t L L L
nnnnTz
dx y z
w
wvuTv
wvuTu
wvuTwcvcuce
LT
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) +
=1 0 0 0
0
00
22,,, n
t L L
nnnTnTnnnzyx
dassnTnnn
x y
vcucetezcycxcLLLT
tezcycxcwvuT
dudvdwd
( ) ( ) ( ) ( ) ( ) ( )
+
+
zL
TTTn Twvugw
wvuTTwvug
wu
wvuTTwvugwc
0
002
002
,,,
,,,
,,,
,,,
,,,
( )( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
=1 0 0 0
0
002
002
2,,,
,,,
n
t L L
nnnTnTnnnzyx
dassx y
vcucetezcycxcLLLT
wvuTdudvdwd
v
wvuT
( ) ( ) ( ) ( ) ( )
+
+
+
zL
nwvuT
dudvdwdw
wvuTv
wvuTu
wvuTwc
01
00
2
00
2
00
2
00
,,,
,,,,,,,,,
.
Integro-differential form of equations of systems (4) could be written as
( ) ( ) ( ) ( ) ( ) ( )
+=t z
zyxxx
wx
wyxuyxwyxu
x
wyxuttzyxutzyxu
0 0
22
2
2,,,,,,,,,5,,,,,,
( )( )[ ]
( ) ( ) ( ) ( )( ) +
+
0 0
22
2
2
1,,,,,,,,,5
616z
zyx dw
wdwEwx
wyxuyxwyxu
x
wyxutw
dwdwE
( ) ( ) ( ) ( ) ( )
+
+
+
+
t zx
zzyx
yxwyxudwd
wx
wyxuyxwyxu
x
wyxuwKt
0 0
2
0 0
22
2
2,,,
21,,,,,,,,,
-
Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015
43
( ) ( )( ) ( ) ( )
( ) ( )
+
+
+
+t z yxy
w
wyxuwx
wyxutdt
w
wdwEy
wyxu0 0
2
22
2
2,,,,,,
21
1,,,
( )( )
( ) ( ) ( )( )
( )
+
+
+
+
0 0
2
0 02
22,,,
1,,,,,,
21z
xz
yx
wx
wyxudw
wdwEy
wyxuyxwyxutd
w
wdwE
( ) ( )( ) ( ) ( ) ( )
( ) ( ) +
+
+
0 00 02
2,,,
21,,, zt zy
wKtdwdx
wyxTwKwttd
w
wdwEw
wyxu
( ) ( ) ( ) ( ) ( ) ( )
+
tzyxdwdwyxuwtdwd
x
wyxTw x
t zx
,,,
,,,,,,
10 0
2
2
( ) ( )
0 02
2,,,z
x dwdwyxuwt
,
( ) ( ) ( ) ( ) ( ) ( )( )
+
+
+=
21,,,,,,
21
,,,,,,
0 0
2
2
2td
w
wdwEyxwyxu
x
wyxuttzyxutzyxu
t zxy
yy
( ) ( ) ( )( )
( ) ( )
+ +
+
t zxy
zxy
yxwyxu
ywyxu
dw
wdwEyxwyxu
x
wyxu0 0
2
2
2
0 0
2
2
2,,,,,,5
61
1,,,,,,
( ) ( )( ) ( )
( ) ( ) ( )
+
0 0
22
2
22,,,,,,,,,5
1,,, z zxyz
wywyxu
yxwyxu
ywyxu
dtw
wdwEwywyxu
( )( ) ( ) ( ) ( )
( ) ( ) ( ) ( ) +
+
+
0 00 0
,,,,,,
61zt z
dwdy
wyxTwKwtdwd
ywyxT
wwKttdw
wdwE
( ) ( ) ( ) ( ) ( ) ( )
+
+
+
0 00 0
2
2
22,,,,,,,,, zt z yyy
wKtdwdwywyxu
ywyxu
yxwyxu
wKt
( ) ( ) ( ) ( ) ( )
+
+
+
+
t
yyyy
z
zyxutdwd
wywyxu
ywyxu
yxwyxu
0
2
2
22,,,,,,,,,,,,
( ) ( )( )[ ]
( )( )[ ]
( ) ( )+
+
+
+
+
0
,,,,,,
1212,,,
dy
zyxuz
zyxuz
zEtz
zEdy
zyxu zyz
( ) ( ) ( ) ( ) ( ) ( )
+
tzyxdwdwyxu
wtdwdwyxu
w yt z yz y
,,,
,,,,,,
10 0
2
2
0 02
2
,
( ) ( ) ( ) ( ) ( ) ( )( )
+
+
+=
21,,,,,,
21
,,,,,,
0 0
2
2
2 tdw
wdwEwx
wyxux
wyxuttzyxutzyxu
t zxz
zz
( ) ( ) ( )( )
( ) ( )
+
+
+
+
t zyz
zxz
wywyxu
ywyxud
w
wdwEwx
wyxux
wyxu0 0
2
2
2
0 0
2
2
2,,,,,,
1,,,,,,
( )( )
( ) ( ) ( ) ( )( ) ( ) ( ) +
+
+
t zzyz wtd
w
wdwEwywyxu
ywyxutdt
w
wdwE0 00 0
2
2
2
1,,,,,,
221
( ) ( ) ( ) ( ) ( ) ( ) ( )
+
+
tz
z
z
zyxutdwd
w
wyxTwwKtdwd
w
wyxTwK
00 0
,,,5,,,,,, ( ) ( ) ( )
( )[ ]( )
( )( ) ( )
+
+
0
,,,,,,5116
,,,,,,
x
zyxuz
zyxuz
zEz
zEdy
zyxux
zyxuxzyx
-
Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015
44
( ) ( ) ( ) ( ) ( ) ( )
+
+
+
tzyxy d
z
zyxuy
zyxux
zyxutzKtd
yzyxu
0
,,,,,,,,,
6,,,
( ) ( ) ( ) ( ) ( )
+
+
tzyxdz
zyxuy
zyxux
zyxuzKt zz
yx,,,
,,,,,,,,,
10
,
where ( ) ( ) ( )[ ]= z iis wdtwyxuwtzyx s0
,,,,,, , s =x,y,z, =L/2E0, E0 is the average value of Young modulus.
The second-order approximations of components of displacement vector could be written as
( ) ( ) ( ) ( ) ( )
++=t z
yxxuxx yx
wyxux
wyxuttzyxutzyxu
0 0
12
21
2
1122
,,,,,,561
,,,,,,
( ) ( )( )
( ) ( ) ( )
+
0 0
12
12
21
21
2,,,,,,,,,5
1,,, z zyxz
wx
wyxuyx
wyxux
wyxudw
wdwEwx
wyxu
( )( ) ( ) ( )
( ) ( ) ( )
+
+
++
t z
zyx dwdwx
wyxuyxwyxu
x
wyxuwKttd
w
wdwE0 0
12
12
21
2,,,,,,,,,
61
( ) ( ) ( ) ( ) ( )
+
+
+
+
t zx
zzyx
yxwyxudwd
wx
wyxuyxwyxu
x
wyxuwKt
0 0
12
0 0
12
12
21
2,,,,,,,,,,,,
( ) ( )( )
( ) ( ) ( ) ( )( ) +
+
+
+
+t z
yxy
w
wdwEy
wyxuyxwyxudt
w
wdwEy
wyxu0 0
21
21
2
21
2
1,,,,,,
21
21,,,
( ) ( ) ( ) ( ) ( ) ( )( )
( ) + +
+
+
0 00 02
12
12
121,,,,,,
21 zt z yx
w
wEtdw
wdwEw
wyxuwx
wyxutdt
( ) ( ) ( ) ( )
+
+
0 02
12
12
21
21
2,,,,,,
2,,,,,,
zyxyx
w
wyxuwx
wyxutdwdy
wyxuyxwyxu
( )( ) ( ) ( )
( ) ( ) ( ) ( ) (
++
t zz
twdx
wyxTwwKdwd
x
wyxTwKwtd
w
wdwE0 00 0
,,,,,,
1
) ( ) ( ) ( ) ( ) ( )
+
0 02
12
0 02
12
,,,,,,z
xt z
x dwdwyxuwtdwdwyxuwtd
( ) ( )}tzyxtzyxxxux
,,,,,, 102 ,
( ) ( ) ( ) ( ) ( )( )
+
+
++=t z
xyyuyy d
w
wdwEyxwyxu
x
wyxuttzyxutzyxu
0 0
12
21
2
122 1,,,,,,
2,,,,,,
( ) ( ) ( )( )
( ) ( )
+ +
+
t zxy
zxy
yxwyxu
ywyxu
dw
wdwEyxwyxu
x
wyxut0 0
12
21
2
0 0
12
21
2,,,,,,5
1,,,,,,
2
( ) ( )( )
( ) ( ) ( )
+
0 0
12
12
21
21
2,,,,,,,,,5
61,,,
zzxyz
wywyxu
yxwyxu
ywyxu
dtw
wdwEwy
wyxu
( )( ) ( ) ( ) ( )
( ) ( ) ( ) ( )
+
+
0 00 0
,,,,,,
61zt z
dwdy
wyxTwwKtdwd
ywyxT
wKwttdw
wdwE
-
Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015
45
( ) ( ) ( ) ( ) ( ) ( )
+
+
0 00 0
12
21
21
2,,,,,,,,, zt z yyy
wKtdwdwy
wyxuy
wyxuyxwyxu
wKt
( ) ( ) ( ) ( ) ( )
+
+
+
+
t yyyy
z
zyxutdwd
wywyxu
ywyxu
yxwyxu
0
112
21
21
2,,,
21,,,,,,,,,
( ) ( )( )
( )( )[ ]
( ) ( )
+
+
+
+
20
111 ,,,,,,
121,,,
uyzyz d
yzyxu
z
zyxuz
zEtz
zEdy
zyxu
( ) ( )} 110 ,,,,,, tzyxtzyx yy , ( ) ( ) ( ) ( ) ( ) ( )
+
+
++=
t zxz
zzzw
wdwEwx
wyxux
wyxutzyxutzyxu
0 0
12
21
2
1122 1,,,,,,
21
,,,,,,
( ) ( ) ( ) ( )( ) ( )( )
+
+ +
+
t zz
zxz
ywyxu
tdw
wdwEwx
wyxux
wyxutdt0 0
21
2
0 0
12
21
2,,,
21
1,,,,,,
2
( ) ( )( ) ( ) ( ) ( )
( ) ( )
+
+
+
0 02
12
0 0
12
,,,,,,
1,,, z
zt z
y
ywyxudwd
w
wyxTwwKtd
w
wdwEwy
wyxu
( ) ( )( ) ( ) ( )
( ) ( )( )[ ] ( ) ++
+
+
+ tzy t
z
zEdwdw
wyxTwwKttd
w
wdwEwy
wyxu00 0
12
16,,,
21,,,
( ) ( ) ( ) ( ) ( )
0
11111 ,,,,,,56
,,,,,,,,,5x
zyxuz
zyxutdy
zyxux
zyxuz
zyxu xzyxz
( ) ( )( )[ ] ( )
( ) ( ) ( )
+
+
++
tzyxy d
z
zyxuy
zyxux
zyxut
z
zEtdy
zyxu0
1111 ,,,,,,,,,
16,,,
( ) ( ) ( ) ( ) ( ) ( )
+
+
tzyxdz
zyxuy
zyxux
zyxuzKtzK zz
zyx,,,
,,,,,,,,,
020
111
( )}tzyxz ,,,1 .
Calculation of the average values u2 leads to the following results
( ) ( ) ( ) ( ) ( ) ( ) (
+
=
0 0 0 0
12
12
21
22
2 1,,,,,,,,,5
121 x y zL L L
zzyx
zux Lz
zdzEzx
tzyxuyx
tzyxux
tzyxutL
) ( ) ( ) ( ) ( ) ( )( ) +
0 0 0 0
12
12
21
22
1,,,,,,,,,5
12x y zL L L
zzyx
z
zLzx
tzyxuyx
tzyxux
tzyxuzEtdxdydz
( ) ( ) ( ) ( ) ( )
+
+
+
0 0 0 0
12
12
21
22 ,,,,,,,,,
21 x y zL L L zyx
zzx
tzyxuyx
tzyxux
tzyxuzLttdxdydzd
( ) ( ) ( ) ( ) ( )
+
+
0 0 0 0
12
12
21
22,,,,,,,,,
2x y zL L L
zyxz
zx
tzyxuyx
tzyxux
tzyxuzLtdxdydzdzK
( ) ( ) ( ) ( ) ( ) ( ) +
+
+
0 0 0 02
12
12
2
1,,,,,,
21 x y zL L L zyx ydzd
z
zLy
tzyxuyx
tzyxuzEttdxdydzdzK
-
Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015
46
( ) ( ) ( ) ( ) ( ) ( )
+
+
+
41,,,,,,
21 2
0 0 0 02
12
12
2 xy zL L L yx
z tdxdydz
zdzEz
tzyxuzx
tzyxuzLttdxd
( ) ( )( )( ) ( ) ( ) ( ) +
+
+
+
0 0 0 0
2
0 0 0 02
12
12
141,,,,,,
1x y zx y z L L L
zL L L
yxz
z
zLttdxdydzd
ytzyxu
yxtzyxu
z
zLzE
( ) ( ) ( ) ( ) ( ) ( )
+
+
0 0 0 02
12
21
21
2,,,
2,,,,,, x
y zL L Lx
z
yx
t
tzyxuzzLtdxdydzdzE
z
tzyxuzx
tzyxu
( ) ( ) ( ) ( ) ( ) + 0 0 0 0
2
0 0 0 01
2
2,,,
x y zx y z L L L
z
L L L
xz zLtdxdydzdtzyxuzzLttdxdydzd
( ) ( ) ( ) ( ) ( )
+
zL
zxxx zdzzLLtdxdydzd
t
tzyxu0
20
2
21
2
421
2,,, ,
( ) ( ) ( )( )( ) ( )
+
+
=
2,,,,,,
121 2
0 0 0 0
12
21
22
2
x y zL L Lxyz
zuy tdxdydzdyxtzyxu
x
tzyxuz
zLzEL
( ) ( )( )( ) ( ) ( ) ( ) +
+
+
+
0 0 0 00 0 0 0
12
21
2
1121,,,,,,
1x y zx y z L L L
zL L L
xyz
z
zLzEtdxdydzd
yxtzyxu
x
tzyxuz
zLzE
( ) ( ) ( ) ( ) ( )
0 0 0 0
221
21
2
21
2
12,,,,,,,,,5
x y zL L Lzxy zEtdxdydzd
zytzyxu
yxtzyxu
ytzyxu
( )( ) ( ) ( ) ( ) ( ) +
+
0 0 0 0
212
12
21
2
2,,,,,,,,,5
1x y zL L L
zxyz zKttdxdydzdzy
tzyxuyx
tzyxuy
tzyxuz
zL
( ) ( ) ( ) ( ) ( ) ( )
+
+
0 0 0 0
12
21
21
2,,,,,,,,, x y zL L L
z
yyyz zLzKtdxdydzd
zytzyxu
ytzyxu
yxtzyxu
zL
( ) ( ) ( ) ( )
+
+
+
+
0 0 0 0
112
21
21
22,,,
21,,,,,,,,,
2x y zL L L yyyy
z
tzyxutdxdydzd
zytzyxu
ytzyxu
yxtzyxu
( ) ( )( ) ( )
( ) ( ) ( )( ) +
+
+
+
0 0 0 0
112
21
1,,,,,,
21,,, x
y zL L Lzyz
z
zdzEy
tzyxuz
tzyxutdxdyd
z
zdzEy
tzyxu
( ) ( ) ( ) ( )
+
0 0 0 02
122
0 0 0 02
12
2 ,,,
2,,,
21 x y zx y z L L L yL L L y
t
tzyxutdxdydzd
t
tzyxuzttdxdyd
( ) ( ) ( ) ( ) ( ) ( ) +
22,,,
022
0 0 0 01
yyL L L
yz
x y z
tdxdydzdtzyxuzzLtdxdydzdz
( ) ( )1
04
zL
z zdzzLL ,
( ) ( ) ( )( )( ) ( )
+
+
=
2,,,,,,
121 2
0 0 0 0
12
21
22
2
x y zL L Lxzz
zz tdxdydzdzx
tzyxux
tzyxuz
zLzEtL
( ) ( )( )( ) ( ) ( ) ( ) +
+
+
0 0 0 0
2
0 0 0 0
12
21
2
21,,,,,,
1x y zx y z L L LL L L
xzz zEttdxdydzdzx
tzyxux
tzyxuz
zLzE
( ) ( ) ( ) ( )
+
+
0 0 0 0
12
21
21
2
21
2,,,,,,,,,,,, x
y zL L L yzyz
zytzyxu
ytzyxu
tdxdydzdzy
tzyxuy
tzyxu
-
Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015
47
( ) ( )( )[ ]
( ) ( ) ( )
++
0 0 0 0
1112,,,,,,,,,5
121
12x y zL L L yxzz
ytzyxu
x
tzyxuz
tzyxutdxdydzd
z
zLzE
( )( ) ( )
( ) ( ) ( )
+
0 0 0 0
1112
2 ,,,,,,,,,5121
x y zL L L yxz
ytzyxu
x
tzyxuz
tzyxutdtxdyd
z
zdzE
( )( ) ( )
( ) ( ) ( ) ( )
+
+
++
0 0 0 0
1112 ,,,,,,,,,
21x y zL L L
zyx
z
tzyxuy
tzyxux
tzyxuzKttdxdyd
z
zdzE
( ) ( ) ( ) ( ) ( )
+
+
0 0 0 0
1112
2 ,,,,,,,,,
22x y zL L L
zyxz
z
tzyxuy
tzyxux
tzyxuzKtdxdydzd
( ) ( ) ( ) ( ) ( )
+
zx y z L
z
zL L L
zz zLtdxdydzdztzyxuzLtdxdydzd0
02
0 0 0 01 42
,,,
( ) } 1 Lzdz .
System of equations for the functions Cijk(x,y,z,t) (i 0, j 0, k 0) could be written as
( ) ( ) ( ) ( )
+
+
=
2000
2
2000
2
2000
2
0000 ,,,,,,,,,,,,
z
tzyxCy
tzyxCx
tzyxCDt
tzyxCL ;
( ) ( ) ( ) ( ) ( )
+
+
=
ytzyxC
Tzgyx
tzyxCTzg
xD
t
tzyxC iL
iLL
i ,,,,
,,,
,
,,, 1001000
00
( ) ( ) ( ) ( ) ( )
+
+
+
+ 200
2
200
2
200
2100 ,,,,,,,,,,,,
,
z
tzyxCy
tzyxCx
tzyxCz
tzyxCTzg
ziiii
L , i 1;
( ) ( ) ( ) ( )+
+
+
=
2010
2
2010
2
2010
2
0010 ,,,,,,,,,,,,
z
tzyxCy
tzyxCx
tzyxCD
t
tzyxCL
( )( )
( ) ( )( )
( )
+
+
+y
tzyxCTzyxPtzyxC
yxtzyxC
TzyxPtzyxC
xD L
,,,
,,,
,,,,,,
,,,
,,, 0000000000000
( )( )
( )
+z
tzyxCTzyxPtzyxC
z
,,,
,,,
,,, 000000
;
( ) ( ) ( ) ( )+
+
+
=
LL Dz
tzyxCy
tzyxCx
tzyxCD
t
tzyxC02
0202
2020
2
2020
2
0020 ,,,,,,,,,,,,
( ) ( )( )( ) ( ) ( )
+
ytzyxC
tzyxCyy
tzyxCTzyxPtzyxC
tzyxCx
,,,
,,,
,,,
,,,
,,,
,,,000
010000
1000
010
( )( ) ( )
( )( )
( ) ( )( )
+
+
TzyxPtzyxC
xD
z
tzyxCTzyxPtzyxC
tzyxCzTzyxP
tzyxCL
,,,
,,,,,,
,,,
,,,
,,,
,,,
,,, 0000
0001
000010
1000
( ) ( )( )
( ) ( )( )
( )
+
+
z
tzyxCTzyxPtzyxC
zytzyxC
TzyxPtzyxC
yxtzyxC ,,,
,,,
,,,,,,
,,,
,,,,,, 010000010000010
;
( ) ( ) ( ) ( )+
+
+
=
2001
2
2001
2
2001
2
0001 ,,,,,,,,,,,,
z
tzyxCy
tzyxCx
tzyxCD
t
tzyxCL
-
Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015
48
( )[ ] ( )( ) ( )( )
+
++
+
Tktzyx
WdtWyxCTzyxPtzyxC
Tzyxgx
D SL
SLSLSSL
z ,,,
,,,
,,,
,,,1,,,10
000000
0
( )[ ] ( )( ) ( )( )
++
+
Tktzyx
WdtWyxCTzyxPtzyxC
Tzyxgy
D SL
SLSLSSL
z ,,,
,,,
,,,
,,,1,,,10
000000
0
;
( ) ( ) ( ) ( )+
+
+
=
2002
2
2002
2
2002
2
0002 ,,,,,,,,,,,,
z
tzyxCy
tzyxCx
tzyxCDt
tzyxCL
( )[ ] ( )( ) ( )( )
+
++
+
Tktzyx
WdtWyxCTzyxPtzyxC
Tzyxgx
D SL
SLSLSSL
z ,,,
,,,
,,,
,,,1,,,10
001000
0
( )[ ] ( )( ) ( )( )
+
++
+
Tktzyx
WdtWyxCTzyxPtzyxC
Tzyxgy
D SL
SLSLSSL
z ,,,
,,,
,,,
,,,1,,,10
001000
0
( )[ ] ( ) ( )( ) ( )
++
+
zL
SLSLSSL WdtWyxCTzyxPtzyxC
tzyxCTzyxgx
D0
000
1000
0010 ,,,,,,
,,,
,,,1,,,1
( ) ( ) ( )( )( ) ( )
+
+
zLS
SS WdtWyxC
Tktzyx
TzyxPtzyxC
tzyxCyTk
tzyx0
000
1000
001 ,,,,,,
,,,
,,,
,,,1,,,
( )[ ]} SLLSLS DTzyxg 0,,,1 + ; ( ) ( ) ( ) ( ) ( )
+
+
+
=
x
tzyxCxz
tzyxCy
tzyxCx
tzyxCDt
tzyxCL
,,,,,,,,,,,,,,, 0102
1102
2110
2
2110
2
0110
( ) ( ) ( ) ( ) ( ) +
+
+
LLLL D
z
tzyxCTzyxg
zytzyxC
Tzyxgy
Tzyxg 0010010 ,,,
,,,
,,,
,,,,,,
( )( )
( ) ( )( )
( ) ( )( )
+
+
+TzyxPtzyxC
zytzyxC
TzyxPtzyxC
yxtzyxC
TzyxPtzyxC
x ,,,
,,,,,,
,,,
,,,,,,
,,,
,,, 000100000100000
( ) ( ) ( )( )( ) ( )
( )
+
+
TzyxPtzyxC
yxtzyxC
TzyxPtzyxC
tzyxCx
Dz
tzyxCL
,,,
,,,,,,
,,,
,,,
,,,
,,,1
0000001
0001000
100
( ) ( ) ( ) ( )( )( )
LDz
tzyxCTzyxPtzyxC
tzyxCzy
tzyxCtzyxC 0000
1000
100000
100,,,
,,,
,,,
,,,
,,,
,,,
+
;
( ) ( ) ( ) ( ) ( )
+
+
+
=
ytzyxC
xz
tzyxCy
tzyxCx
tzyxCD
t
tzyxCL
,,,,,,,,,,,,,,, 0002
1002
2100
2
2100
2
0101
( ) ( ) ( ) ( ) ( ) +
+
+
LLLL D
z
tzyxCTzyxgzy
tzyxCTzyxgy
Tzyxg 0000000,,,
,,,
,,,
,,,,,,
( )[ ] ( ) ( )( ) ( )
++
+
zL
SLSLSSL WdtWyxCTzPtzyxC
tzyxCTzyxgx
D0
100
1000
1000 ,,,,
,,,
,,,1,,,1
( ) ( )[ ] ( ) ( )( )( ) ( ) ( )[ ] ( )
+
+
++
+
zz L
LSLSS
L
SLSLSSLS
WdtWyxCTzyxgxTk
tzyxWdtWyxC
TzPtzyxC
tzyxCTzyxgy
DTk
tzyx
0100
0100
1000
1000
,,,,,,1,,,,,,
,
,,,
,,,1,,,1,,,
-
Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015
49
( ) ( ) ( )[ ] ( )
+
+
Tk
tzyxTzyxgy
DWdtWyxCTk
tzyx SLSLSSL
LS
z ,,,
,,,1,,,,,, 00
100
( ) ( ) SLLL
DWdtWyxCWdtWyxCzz
00
1000
100 ,,,,,,
;
( ) ( ) ( ) ( ) ( )( )
+
+
+
=
TzyxPtzyxC
xz
tzyxCy
tzyxCx
tzyxCDt
tzyxCL
,,,
,,,,,,,,,,,,,,, 0002
0112
2011
2
2011
2
0011
( ) ( )( )
( ) ( )( )
( )+
+
+
LDz
tzyxCTzyxPtzyxC
zytzyxC
TzyxPtzyxC
yxtzyxC
0001000001000001 ,,,
,,,
,,,,,,
,,,
,,,,,,
( ) ( )( )( ) ( ) ( )
+
+
ytzyxC
tzyxCyx
tzyxCTzyxPtzyxC
tzyxCx
D L,,,
,,,
,,,
,,,
,,,
,,,000
001000
1000
0010
( )( ) ( )
( )( )
( ) ( )
+
+
Tktzyx
xz
tzyxCTzyxPtzyxC
tzyxCzTzyxP
tzyxC S ,,,,,,,,,
,,,
,,,
,,,
,,, 0001
000001
1000
( )[ ] ( )( ) ( )( )
+
++
Tktzyx
xDWdtWyxC
TzyxPtzyxCTzyxg SSL
L
SLSLS
z ,,,
,,,
,,,
,,,1,,,1 00
010000
( )[ ] ( ) ( )( ) ( ) +
++
SLSL
L
SLSLS DDWdtWyxCTzyxPtzyxC
tzyxCTzyxgz
000
000
1000
010 ,,,,,,
,,,
,,,1,,,1
( )[ ] ( ) ( )( )( ) ( )
++
zLS
SLSLS WdtWyxCTktzyx
TzyxPtzyxC
tzyxCTzyxgy 0 000
1000
010 ,,,,,,
,,,
,,,
,,,1,,,1
.
Boundary and initial conditions for functions Cijk(x,t) (i 0, j 0, k 0) could be written as ( )
0,,,
0
=
=x
ijk
x
tzyxC
;
( )0
,,,
=
= xLx
ijk
x
tzyxC
;
( )0
,,,
0
=
=y
ijk
ytzyxC
; ( )
0,,,
=
= yLy
ijk
ytzyxC
;
( )0
,,,
0
=
=z
ijk
z
tzyxC
;
( )0
,,,
=
= zLz
ijk
z
tzyxC
; C000(x,y,z,0)=fC (x,y,z); Cijk(x,y,z,0)=0.
Solutions of equations for functions Cijk(x,t) (i 0, j 0, k 0) could be written as
( ) ( ) ( ) ( ) ( )+= =1
0000
2,,,
nnCnnnnC
zyxzyx
C tezcycxcFLLLLLL
FtzyxC ,
where ( )
++= 2220
22 111expzyx
LnC LLLtDnte pi , ( ) ( ) ( ) ( ) = x y zL
L L
CnnnnC udvdwdwvufwcvcucF0 0 0
,, ;
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) = =1 0 0 0 0
20
00 ,,,2
,,,
n
t L L L
LnnnCnCnnnnCzyx
Li
x y z
TwvugvcusetezcycxcFnLLL
DtzyxC
pi
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
=
1 0 02
0100 2,,,n
t L
nnCnCnnnnCzyx
Lin
x
ucetezcycxcFnLLL
Ddudvdwdu
wvuCwc
pi
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
=
12
0
0 0
100 2,,,,,,
nnCnnn
zyx
LL L
iLnn tezcycxcLLL
Ddudvdwdv
wvuCTwvugwcvsy z pi
-
Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015
50
( ) ( ) ( ) ( ) ( ) ( )
t L L L
iLnnnnCnC
x y z
dudvdwdw
wvuCTwvugwsvcuceFn
0 0 0 0
100 ,,,,,,
, i 1;
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )( ) =
=1 0 0 0 0
0002
0010
,,,
,,,2,,,
n
t L L L
nnnCnCnnnnCzyx
Lx y z
TwvuPwvuC
vcusetezcycxcFnLLL
DtzyxC
pi
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
=1 0 02
0000 2,,,n
t L
nnCnCnnnnCzyx
Ln
x
ucetezcycxcFnLLL
Ddudvdwdu
wvuCwc
pi
( ) ( ) ( ) ( )( )( ) ( ) ( )
=12
0
0 0 0
000000 2,,,,,,
,,,
nnn
zyx
LL L L
nnnycxcn
LLLDdudvdwd
v
wvuCTwvuP
wvuCwcwcvs
y z z pi
( ) ( ) ( ) ( ) ( ) ( ) ( )( )( )
t L L L
nnnnCnCnnC
x y z
dudvdwdw
wvuCTwvuP
wvuCwsvcucetezcF
0 0 0 0
000000 ,,,
,,,
,,,
;
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) = =1 0 0 0 0
01020
020 ,,,2
,,,
n
t L L L
nnnCnCnnnnCzyx
Lx y z
wvuCvcusetezcycxcFnLLL
DtzyxC pi
( ) ( )( )( ) ( ) ( ) ( ) ( )
=
12
00001
000 2,,,,,,
,,,
nnCnnnnC
zyx
Ln
tezcycxcFnLLL
Ddudvdwdu
wvuCTwvuP
wvuCwc
pi
( ) ( ) ( ) ( ) ( ) ( )( )( )
t L L L
nnnnC
x y z
dudvdwdv
wvuCTwvuP
wvuCwvuCwcvcuse
0 0 0 0
0001
000010
,,,
,,,
,,,
,,,
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )( )
=
1 0 0 0 0
1000
010,,,
,,,
,,,
n
t L L L
nnnnCnCnnnnC
x y z
TwvuPwvuC
wvuCwcvcusetezcycxcFn
( ) ( ) ( ) ( ) ( ) ( )
=1 02
00002
0 2,,,2n
t
nCnCnnnnCzyx
L
zyx
L etezcycxcFnLLL
Ddudvdwdw
wvuCLLL
D
pi
pi
( ) ( ) ( ) ( )( )( ) ( )
=12
0
0 0 0
010000 2,,,,,,
,,,
nnnC
zyx
LL L L
nnnxcFn
LLLDdudvdwd
u
wvuCTwvuP
wvuCwcvcus
x y z pi
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )( )( )
t L L L
nnnnCnCnn
x y z
dudvdwdv
wvuCTwvuP
wvuCwcvsucetezcyc
0 0 0 0
010000 ,,,
,,,
,,,
( ) ( ) ( ) ( ) ( )( )( )
=1 0 0 0 0
0100002
0 ,,,
,,,
,,,2n
t L L L
nnnnCnCzyx
Lx y z
dudvdwdw
wvuCTwvuP
wvuCwsvcuceFn
LLLD
pi
( ) ( ) ( ) ( )tezcycxcnCnnn ;
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) = =1 0 0 0 0
20
001,,,2
,,,
n
t L L LS
nnCnCnnnnCzyx
Lx y z
Tkwvu
usetezcycxcFnLLL
DtzyxC pi
( )[ ] ( )( ) ( ) ( ) ( )
++
dudvdvcwdwcWdWvuCTwvuP
wvuCTwvugnn
L
SLSLS
z
0000
000,,,
,,,
,,,1,,,1
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) =1 0 0 0 0 0
00020
,,,
2n
t L L L L
nnnnCnCnnnnCzyx
Lx y z z
WdWvuCwcvsucetezcycxcFnLLL
D
pi
( )[ ] ( )( )( )
dudvdwdTk
wvu
TwPwvuC
Twvug SSLSLS,,,
,
,,,
1,,,1 000
++ ;
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) = =1 0 0 0 0
20
002,,,2
,,,
n
t L L LS
nnnCnCnnnnCzyx
Lx y z
Tkwvu
vcusetezcycxcFnLLL
DtzyxC pi
( )[ ] ( )( ) ( ) ( )
++
zyx
Ln
L
SLSLS LLLDdudvdwdwcWdWvuC
TwvuPwvuCTwvug
z
20
0001
000,,,
,,,
,,,1,,,1 pi
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Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015
51
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) =1 0 0 0 0 0
001 ,,,,,,
n
t L L L LS
nnnnCnCnnnnC
x y z z
WdWvuCTk
wvuwcvsucetezcycxcFn
( )[ ] ( )( ) ( ) ( ) ( )
++
=12
0000 2,,,
,,,1,,,12n
nnnnCzyx
LSLSLS zcycxcFLLL
DdudvdwdTwvuP
wvuCTwvug pi
( ) ( ) ( ) ( ) ( ) ( ) ( )( ) ( )
+
t L L L L
SnnnnCnC
x y z z
WdWvuCTwvuP
wvuCtzyxCwcvcuseten
0 0 0 0 0000
1000
001 ,,,,,,
,,,
,,,1
( )[ ] ( ) ( ) ( ) ( ) ( ) + =1
202,,,
,,,1n
nCnnnnCzyx
LSLSLS tezcycxcFLLL
DdudvdwdTk
wvuTwvug pi
( ) ( ) ( ) ( ) ( ) ( )( ) ( )
+
t L L L L
SS
nnn
x y z z
WdWvuCTwPwvuC
tzyxCTk
wvuwcvcusn
0 0 0 0 0000
1000
001 ,,,,
,,,
,,,1,,,
( )[ ] ( ) deudvdwdTwvugnCLSLS + ,,,1 ;
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) = =1 0 0 0 0
20
110 ,,,2
,,,
n
t L L L
LnnnCnCnnnnCzyx
Lx y z
TwvugvcusetezcycxcFnLLL
DtzyxC
pi
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
=1 0 02
0010 2,,,n
t L
nnCnCnnnnCzyx
Ln
x
ucetezcycxcFnLLL
Ddudvdwdu
wvuCwc
pi
( ) ( ) ( ) ( ) ( ) ( ) ( )
=12
0
0 0
010 2,,,,,,
nnnnnC
zyx
LL L
Lnn zcycxcFnLLLDdudvdwd
v
wvuCTwvugwcvsy z pi
( ) ( ) ( ) ( ) ( ) ( ) ( )
zyx
Lt L L L
LnnnnCnC LLLDdudvdwd
w
wvuCTwvugwsvcucetex y z
20
0 0 0 0
010 2,,,,,,
pi
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) =1 0 0 0 0
100 ,,,,,,n
t L L L
LnnnnCnCnnnnC
x y z
wvuCTwvugwcvcusetezcycxcFn
( )( )
( ) ( ) ( ) ( ) ( )
=
12
00001
000 2,,,,,,
,,,
nnCnnnnC
zyx
L tezcycxcFnLLL
Ddudvdwdu
wvuCTwvuP
wvuC pi
( ) ( ) ( ) ( ) ( ) ( )( )( )
t L L L
LnnnC
x y z
v
wvuCTwvuP
wvuCwvuCTwvugvsuce
0 0 0 0
0001
000100
,,,
,,,
,,,
,,,,,,
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) =1 0 0 0
202
n
t L L
nnnCnCnnnnCzyx
Ln
x y
vcucetezcycxcFnLLL
Ddudvdwdwc pi
( ) ( ) ( ) ( )( )( )
zL
Ln dudvdwdw
wvuCTwvuP
wvuCwvuCTwvugws
0
0001
000100
,,,
,,,
,,,
,,,,,,
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) =1 0 0 0 0
20
,,,
2n
t L L L
LnnnnCnCnnnnCzyx
Lx y z
TwvugwcvcusetezcycxcFnLLL
D
pi
( )( )
( ) ( ) ( ) ( ) ( )
=12
0100000 2,,,,,,
,,,
nnCnnn
zyx
L tezcycxcnLLL
Ddudvdwdu
wvuCTwvuP
wvuC pi
( ) ( ) ( ) ( ) ( )( )( )
t L L L
LnnnCnC
x y z
vdwdu
wvuCTwvuP
wvuCTwvugwcvseF0 0 0 0
100000 ,,,
,,,
,,,
,,,
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) =1 0 0 0 0
202
n
t L L L
nnnnCnCnnnnCzyx
Ln
x y z
wsvcucetezcycxcFnLLL
Dduduc pi
( ) ( )( )( )
dudvdwdu
wvuCTwPwvuC
Twvug L
,,,
,
,,,
,,,100000 ;
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Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015
52
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) = =1 0 0 0 0
20
101 ,,,2
,,,
n
t L L L
LnnnCnCnnnnCzyx
Lx y z
TwvugvcusetezcycxcFnLLL
DtzyxC pi
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
=1 0 02
0000 2,,,n
t L
nnCnCnnnnCzyx
Ln
x
ucetezcycxcFLLL
Ddudvdwdu
wvuCwc
pi
( ) ( ) ( ) ( ) ( ) ( ) ( )
=12
0
0 0 0
000 2,,,,,,
nnn
zyx
LL L L
Lnnn ycxcnLLLDdudvdwd
v
wvuCTwvugwcwcvsny z z pi
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
t L L L
LnnnnCnCnnC
x y z
dudvdwdw
wvuCTwvugwsvcucetezcF0 0 0 0
000 ,,,,,,
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )[ ] + =1 0 0 0 0
20
,,,12n
t L L L
LSLSnnnCnCnnnnCzyx
Lx y z
TwvugvcusetezcycxcFnLLL
D
pi
( ) ( )( ) ( )
( )
+
dudvdwdTk
wvuWdWvuCTwvuP
wvuCTk
wvu SL
SS
z ,,,
,,,
,,,
,,,1,,,0
100000
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )[ ] + =1 0 0 0 0
20
,,,12n
t L L L
LSLSnnnCnCnnnnCzyx
Lx y z
TwvugvcusetezcycxcFnLLL
D
pi
( ) ( ) ( )( )( ) ( )
+
dudvdwdWdWvuCTk
wvu
TwvuPwvuC
wvuCwczL
SSn
0000
1000
100 ,,,,,,
,,,
,,,
,,,1
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )[ ] + =1 0 0 0 0
20
,,,12
n
t L L L
LSLSnnnCnCnnnnCzyx
Lx y z
TwvugvsucetezcycxcFnLLL
D
pi
( ) ( ) ( ) ( )( ) ( )
dudvdwdWdWvuCTwvuP
wvuCwvuC
Tkwvu
wczL
SS
n
+
0000
1000
100 ,,,,,,
,,,
,,,1,,, ;
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )( ) =
=1 0 0 0 0
0002
0011
,,,
,,,2,,,
n
t L L L
nnnCnCnnnnCzyx
Lx y z
TwvuPwvuC
vcusetezcycxcFnLLL
DtzyxC
pi
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
=1 0 02
0001 2,,,n
t L
nnCnCnnnnCzyx
Ln
x
ucetezcycxcFnLLL
Ddudvdwdu
wvuCwc
pi
( ) ( ) ( ) ( )( )( ) ( ) ( )
=12
0
0 0 0
001000 2,,,,,,
,,,
nnnnC
zyx
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v
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( ) ( ) ( ) ( ) ( ) ( ) ( )( )( )
zyx
Lt L L L
nnnnCnCn LLLDdudvdwd
w
wvuCTwvuP
wvuCwsvcucetezc
x y z
20
0 0 0 0
001000 2,,,,,,
,,, pi
( ) ( ) ( ) ( ) ( ) ( )( )( )
=
1 0 0 0 0
0001
000001
,,,
,,,
,,,
,,,
n
t L L L
nnnnCnC
x y z
dudvdwdu
wvuCTwvuP
wvuCwvuCwcvcuseF
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) =1 0 0 0 0
00120
,,,
2n
t L L L
nnnCnCnnnzyx
LnCnnn
x y z
wvuCvsucetezcycxcLLL
Dtezcycxcn pi
( ) ( )( )( ) ( ) ( ) ( ) ( )
=
12
00001
000 2,,,,,,
,,,
nnCnnn
zyx
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Ddudvdwdv
wvuCTwvuP
wvuCwcFn pi
( ) ( ) ( ) ( ) ( ) ( )( )( )
t L L L
nnnnCnC
x y z
dudvdwdw
wvuCTwvuP
wvuCwvuCwsvcuceF
0 0 0 0
0001
000001
,,,
,,,
,,,
,,,
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )[ ] + =1 0 0 0 0
20
,,,12
n
t L L L
LSLSnnnnCnCnnnnCzyx
Lx y z
TwvugwcvcusetezcycxcFnLLL
D
pi
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Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015
53
( )( )
( ) ( )
+
=12
0
0010
000 2,,,
,,,
,,,
,,,1n
nCzyx
LL
SS FLLL
DdudvdwdWdWvuCTk
wvu
TwvuPwvuC z pi
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )[ ] ( )( )
++
t L L L
SLSLSnnnCnCnnn
x y z
TwvuPwvuCTwvugvsucetezcycxcn
0 0 0 0
000
,,,
,,,1,,,1
( ) ( ) ( ) ( ) ( ) ( ) =1
20
0010
2,,,
,,,
nnnnnC
zyx
LL
Sn
zcycxcFLLL
DdudvdwdWdWvuCTk
wvuwc
z pi
( ) ( ) ( ) ( ) ( ) ( )[ ] ( ) ( )( )
++
t L L L
SLSLSnnnnCnC
x y z
TwvuPwvuC
wvuCTwgwcvcuseten0 0 0 0
1000
010,,,
,,,
,,,1,1
( ) ( ) ( ) ( ) ( ) ( )
=12
0
0000
2,,,
,,,
nnCnnn
zyx
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S tezcycxcnLLL
DdudvdwdWdWvuCTk
wvu z pi
( ) ( ) ( ) ( ) ( )[ ] ( ) + t L L L LLSLSnnnnCnC x y z z WdWvuCTwvugwcvsuceF0 0 0 0 0
000 ,,,,,,1
( ) ( )( )( )
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wvu
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wvuC SS,,,
,
,,,
,,,11
000010
+
.
Author
Pankratov Evgeny Leonidovich was born at 1977. From 1985 to 1995 he was educated in a secondary school in Nizhny Novgorod. From 1995 to 2004 he was educated in Nizhny Novgorod State University: from 1995 to 1999 it was bachelor course in Radiophysics, from 1999 to 2001 it was master course in Ra-diophysics with specialization in Statistical Radiophysics, from 2001 to 2004 it was PhD course in Radio-physics. From 2004 to 2008 E.L. Pankratov was a leading technologist in Institute for Physics of Micro-structures. From 2008 to 2012 E.L. Pankratov was a senior lecture/Associate Professor of Nizhny Novgo-rod State University of Architecture and Civil Engineering. Now E.L. Pankratov is in his Full Doctor course in Radiophysical Department of Nizhny Novgorod State University. He has 96 published papers in area of his researches.
Bulaeva Elena Alexeevna was born at 1991. From 1997 to 2007 she was educated in secondary school of village Kochunovo of Nizhny Novgorod region. From 2007 to 2009 she was educated in boarding school Center for gifted children. From 2009 she is a student of Nizhny Novgorod State University of Architec-ture and Civil Engineering (spatiality Assessment and management of real estate). At the same time she is a student of courses Translator in the field of professional communication and Design (interior art) in the University. E.A. Bulaeva was a contributor of grant of President of Russia (grant MK-548.2010.2). She has 29 published papers in area of her researches.