modeling and design of high-efficiency power amplifiers

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Modeling and Design of High-Efficiency Power Amplifiers Fed by Limited Power Sources Arturo Fajardo Jaimes 1,2 , Fernando Rangel de Sousa 1 1- Radiofrequency Laboratory| Department of Electrical and Electronics Engineering | UFSC | Florianopolis, Brazil 2- Department of Electronics Engineering | Pontifical Xavierian University (PUJ) | Bogota, Colombia

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Page 1: Modeling and Design of High-Efficiency Power Amplifiers

Modeling and Design of High-Efficiency PowerAmplifiers Fed by Limited Power Sources

Arturo Fajardo Jaimes 1,2, Fernando Rangel de Sousa 1

1- Radiofrequency Laboratory| Department of Electrical and Electronics Engineering | UFSC | Florianopolis, Brazil

2- Department of Electronics Engineering | Pontifical Xavierian University (PUJ) | Bogota, Colombia

Page 2: Modeling and Design of High-Efficiency Power Amplifiers

Agenda RFLaboratory

IntroductionProposed PA ModelingDesign MethodologyStudy CaseConclusionsAcknowledgmentReferences

2UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 3: Modeling and Design of High-Efficiency Power Amplifiers

WBANs means? RFLaboratory

• Networks which can be wear-able, implanted or around thehuman body [1].

N1aN1b H1

N1cN1d

N3aN3b

H3

N3c

N2b

H2

N2a

WBAN2

WBAN1

WBAN3

1S. Movassaghi, M. Abolhasan, J. Lipman, et al., “Wireless body area networks: A survey”, IEEECommunications Surveys & Tutorials, vol. 16, no. 3, pp. 1658–1686, 2014.

3UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 4: Modeling and Design of High-Efficiency Power Amplifiers

WBANs means? RFLaboratory

• Networks which can be wear-able, implanted or around thehuman body [1].

N1aN1b H1

N1cN1d

N3aN3b

H3

N3c

N2b

H2

N2a

WBAN2

WBAN1

WBAN3

IoT

• Networking at human body level(WBANs + IoT) is expected tocause a dramatic shift in HcS [1].

1S. Movassaghi, M. Abolhasan, J. Lipman, et al., “Wireless body area networks: A survey”, IEEECommunications Surveys & Tutorials, vol. 16, no. 3, pp. 1658–1686, 2014.

4UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 5: Modeling and Design of High-Efficiency Power Amplifiers

WPTn concept forimplanted device autonomy

RFLaboratory

WPT node (WPTn) is an autonomous wearable WBAN nodeused as energy and communication solution for a passive im-planted RFID tag that sense biomedical data.

N1a

H1

N1c

N1d

SKIN

MUSCLE

FAT

N1b

IMPLANTED

DEVICE

NODE

WBAN

WBAN

NETWORK

5UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 6: Modeling and Design of High-Efficiency Power Amplifiers

Self-sustaining WPT systempower chain

RFLaboratory

The maximum available power (Pavs ) of the Implanted power supply is limited by

BOTH power chain efficiency and Pavs of the Power EPS [2].

Implanted Device WPTn

Implanted Power Supply

VDC

DC

RFWPT interface

(e.g. Inductive

link or

Antenna)

DC

RFRs

Power EPS

LO

AD

2A. Fajardo and F. Rangel de Sousa, “Ideal energy power source model and its implications on battery modeling”,in Proc. 22th IBERCHIP Workshop, Florianopolis, Brasil. 2016, pp. 19–25.

6UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 7: Modeling and Design of High-Efficiency Power Amplifiers

Self-sustaining WPT system Design RFLaboratory

Traditional design approach:• The system interactions are reduced to V or I specifications.• The subsystems are optimized individually.

Non - Traditional design example:• Regulator-less PA: A non regulated voltage between the EPS and

the power amplifier (PA) was explored in [3].

VDC

M LoadDC

RF

L1 L2

Inductive Link

DC

RFRs

EPS

For Self-sustaining WPT systemtraditional design approach isinadequate, because maximumη does not necessarily meansmaximum Pout .

3J. C. Rudell, V. Bhagavatula, and W. C. Wesson, “Future integrated sensor radios for long-haul communication”,IEEE Commun. Mag., vol. 52, no. 4, pp. 101–109, 2014.

7UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 8: Modeling and Design of High-Efficiency Power Amplifiers

Modeling of the energy-flow processusing the PA impedance ports

RFLaboratory

• At input power ports: RDCand RAC .

• A fraction of the power “dis-sipated” by PA are trans-fered to RL = RIL.

RDC

RAC

PAVDC

RIL

L1

Impedance

LIL

VAC

Rs

EPS

DC/RF

Converter ,

• The load power depends only onthe external elements connectedto the PA.

• The output power port could bemodeled by a AC circuit powersource.

8UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 9: Modeling and Design of High-Efficiency Power Amplifiers

Modeling of the energy-flow processusing the PA impedance ports

RFLaboratory

• At input power ports: RDCand RAC .

• A fraction of the power “dis-sipated” by PA are trans-fered to RL = RIL.

RDC

RAC

PAVDC

RIL

L1

Impedance

LIL

VAC

Rs

EPS

DC/RF

Converter ,

• The load power depends only onthe external elements connectedto the PA.

• The output power port could bemodeled by a AC circuit powersource.

9UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 10: Modeling and Design of High-Efficiency Power Amplifiers

Modeling of the energy-flow processusing the PA impedance ports

RFLaboratory

• At input power ports: RDCand RAC .

• A fraction of the power “dis-sipated” by PA are trans-fered to RL = RIL.

RDC

RAC

PAVDC

RIL

L1

Impedance

LIL

VAC

Rs

EPS

DC/RF

Converter ,

• The load power depends only onthe external elements connectedto the PA.

• The output power port could bemodeled by a AC circuit powersource.

RDC

RAC

PRF

PA

RL

VDC

VAC

10UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 11: Modeling and Design of High-Efficiency Power Amplifiers

Circuit power source RFLaboratory

A circuit power sourceimposes the power onits load [4].

v(t)

i(t)

Ps(t)

Vs(t)

v(t)

i(t)

v(t)

i(t)

Is(t)

4R. W. Erickson and D. Maksimovic, Fundamentals of power electronics. New York: Springer, 2001.

11UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 12: Modeling and Design of High-Efficiency Power Amplifiers

PA efficiency predicted bythe Model I

RFLaboratory

RDC

RAC

PRF

PA RL

VDC

VAC

IRF

VRF

IRF = Imsin (ω0t)

VRF = Vmsin (ω0t)

PRF =Im

2

2RL =

Vm2

2RL=

Im · Vm

2

PDC = IDC2RDC =

VDC2

RDC= IDCVDC

Output power and efficiency:

PRF = PAE · PDC + PAC

PRF = ηD · PPA

PRF = η · (PDC + PAC )

When PAC is negligible compared to PDC :

η ≈ PAE ≈ ηD ≈PRF

PDC=

RL

2RDC

(Im

IDC

)2

.

12UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 13: Modeling and Design of High-Efficiency Power Amplifiers

PA efficiency predicted bythe Model

RFLaboratory

C0LRF L0

PA

CBypass

ACRF

DC

CBypass

GND

IPA

Ibias

RPA

Rbias

Class-A PA

C0 L0

PA

AC RF

DC

CBypass

GND

IPAIbias

RPARbias

Class-D PA

DC power= Bias circuit (or the drivercircuit) + PA power stage. Therefore,η can be rewritten as:

η =1

2

RLRDC

RPA2

(ImIPA

)2

= f (GR)

GR is the PA impedance factor definedas GR = RDC/RL, and f (x) is a func-tion dependent on the PA topology.

13UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 14: Modeling and Design of High-Efficiency Power Amplifiers

Class-D Modeling Example I RFLaboratory

Considering ideal components, D=50% in theAC-port, high loaded quality factor, the MOSFET(N and P type) as an ideal switch an Ron.

Im =Vm

(RL + Ron)=

4VDC

π (RL + Ron)

IPA = 〈iPA(t)〉T0≈ 2Im/π

RPA =VDC

IPA=π2

8(RL + Ron)

Rbias =Ron

f0 · α · a · b

where, α represents the capacitance excess dueto the driver implementation. The technology pa-rameters (i.e., a = CG

Wand b = RonW ) were

proposed in [5].

C0 L0

PA

AC RF

DC

CBypass

GND

IPAIbias

RPARbias

Moving average

〈x(t)〉T0=ω0

t0+ 2πω0∫

t0

x(t)dt

5B. R. W. Stratakos Anthony J. and S. R. Sanders, “High-efficiency low-voltage dc-dc conversion for portableapplications.”, in Proc. Int. Workshop on Low-Power Design, Napa, CA. 1994, pp. 21–27.

14UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 15: Modeling and Design of High-Efficiency Power Amplifiers

Class-D Modeling Example II RFLaboratory

C0 L0

PA

AC RF

DC

CBypass

GND

IPAIbias

RPARbias

η =1

(1 + m (GR))(

1 + k(

1 + 1m(GR )

))where the function m(x) is given by:

m (x) =1

2

((A + B) x − 1±

√1 + (2A− 2B) x + (A + B)2x2

)

A = f0 · α · a · b ; B = 8π2 ; k = A

B; GR =

RDC

RL

.

This efficiency is maximum when:

Gopt =

√(k + 1) k + k

(A + B)√

(k + 1) k + A (k + 1)(1)

its maximum value is:

ηmax =

√k2 + k(

k +√

k2 + k) (

k + 1 +√

k2 + k) .(2)

15UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 16: Modeling and Design of High-Efficiency Power Amplifiers

Proposed Design Methodology I RFLaboratory

• For maximizing the power deliv-ered to the load, the methodologymaximize BOTH the power sup-plied by the harvester and the PAefficiency.

• The methodology uses PA mod-eling based on its ports andimpedance matching concepts.

• The DC-IM implementation couldbe an DC/DC converter, and theAC-IM implementation could be aL or π network.

PA

DC

AC In

AC Out

DC-IM1 : M

AC-IM AC-IM

DC/RF converter

1 : n1 : pPower EPS

16UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 17: Modeling and Design of High-Efficiency Power Amplifiers

Proposed Design Methodology II RFLaboratory

Step Step Description Equation

1

Find the Pavs of the power EPS andits related variables: optimum loadimpedance (Rpavs ), load voltage (Vpavs )and current (Ipavs ).

e.g. for a thermoelectric generator, theinternal series resistor of the EPS (Rs )

is constant, therefore: Rpavs = Rs ,Vpavs = VDC

2and Ipavs = VDC

2Rs.

2Fix the voltage in the PA DC-port as thehighest for a particular implementationrestriction (e.g. Vmax CMOS process.)

VDCopt = Vmax

3 Find the DC current that extracts the Pavsof the EPS. IDCopt = Pavs

Vmax

4Find the impedance of the PA DC-portthat maximizes the power extracted fromthe harvester.

RDCopt = VDCIDC

= V 2max

Pavs

5 Find the optimum load value for maxi-mizing PA efficiency.

RLopt = GRoptRDCopt

6Find the specifications of the DC andAC impedance matching networks (DC-IM and AC-IM).

M =

√RDCopt

Rpavs=

√V 2

maxPavs ·Rpavs

n =

√RL

RLopt=

√Pavs ·RL

GRoptV 2

max

17UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 18: Modeling and Design of High-Efficiency Power Amplifiers

Proposed Design Methodology II RFLaboratory

Step Step Description Equation

1

Find the Pavs of the power EPS andits related variables: optimum loadimpedance (Rpavs ), load voltage (Vpavs )and current (Ipavs ).

e.g. for a thermoelectric generator, theinternal series resistor of the EPS (Rs )

is constant, therefore: Rpavs = Rs ,Vpavs = VDC

2and Ipavs = VDC

2Rs.

2Fix the voltage in the PA DC-port as thehighest for a particular implementationrestriction (e.g. Vmax CMOS process.)

VDCopt = Vmax

3 Find the DC current that extracts the Pavsof the EPS. IDCopt = Pavs

Vmax

4Find the impedance of the PA DC-portthat maximizes the power extracted fromthe harvester.

RDCopt = VDCIDC

= V 2max

Pavs

5 Find the optimum load value for maxi-mizing PA efficiency.

RLopt = GRoptRDCopt

6Find the specifications of the DC andAC impedance matching networks (DC-IM and AC-IM).

M =

√RDCopt

Rpavs=

√V 2

maxPavs ·Rpavs

n =

√RL

RLopt=

√Pavs ·RL

GRoptV 2

max

18UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 19: Modeling and Design of High-Efficiency Power Amplifiers

Proposed Design Methodology II RFLaboratory

Step Step Description Equation

1

Find the Pavs of the power EPS andits related variables: optimum loadimpedance (Rpavs ), load voltage (Vpavs )and current (Ipavs ).

e.g. for a thermoelectric generator, theinternal series resistor of the EPS (Rs )

is constant, therefore: Rpavs = Rs ,Vpavs = VDC

2and Ipavs = VDC

2Rs.

2Fix the voltage in the PA DC-port as thehighest for a particular implementationrestriction (e.g. Vmax CMOS process.)

VDCopt = Vmax

3 Find the DC current that extracts the Pavsof the EPS. IDCopt = Pavs

Vmax

4Find the impedance of the PA DC-portthat maximizes the power extracted fromthe harvester.

RDCopt = VDCIDC

= V 2max

Pavs

5 Find the optimum load value for maxi-mizing PA efficiency.

RLopt = GRoptRDCopt

6Find the specifications of the DC andAC impedance matching networks (DC-IM and AC-IM).

M =

√RDCopt

Rpavs=

√V 2

maxPavs ·Rpavs

n =

√RL

RLopt=

√Pavs ·RL

GRoptV 2

max

19UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 20: Modeling and Design of High-Efficiency Power Amplifiers

Proposed Design Methodology II RFLaboratory

Step Step Description Equation

1

Find the Pavs of the power EPS andits related variables: optimum loadimpedance (Rpavs ), load voltage (Vpavs )and current (Ipavs ).

e.g. for a thermoelectric generator, theinternal series resistor of the EPS (Rs )

is constant, therefore: Rpavs = Rs ,Vpavs = VDC

2and Ipavs = VDC

2Rs.

2Fix the voltage in the PA DC-port as thehighest for a particular implementationrestriction (e.g. Vmax CMOS process.)

VDCopt = Vmax

3 Find the DC current that extracts the Pavsof the EPS. IDCopt = Pavs

Vmax

4Find the impedance of the PA DC-portthat maximizes the power extracted fromthe harvester.

RDCopt = VDCIDC

= V 2max

Pavs

5 Find the optimum load value for maxi-mizing PA efficiency.

RLopt = GRoptRDCopt

6Find the specifications of the DC andAC impedance matching networks (DC-IM and AC-IM).

M =

√RDCopt

Rpavs=

√V 2

maxPavs ·Rpavs

n =

√RL

RLopt=

√Pavs ·RL

GRoptV 2

max

20UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 21: Modeling and Design of High-Efficiency Power Amplifiers

Proposed Design Methodology II RFLaboratory

Step Step Description Equation

1

Find the Pavs of the power EPS andits related variables: optimum loadimpedance (Rpavs ), load voltage (Vpavs )and current (Ipavs ).

e.g. for a thermoelectric generator, theinternal series resistor of the EPS (Rs )

is constant, therefore: Rpavs = Rs ,Vpavs = VDC

2and Ipavs = VDC

2Rs.

2Fix the voltage in the PA DC-port as thehighest for a particular implementationrestriction (e.g. Vmax CMOS process.)

VDCopt = Vmax

3 Find the DC current that extracts the Pavsof the EPS. IDCopt = Pavs

Vmax

4Find the impedance of the PA DC-portthat maximizes the power extracted fromthe harvester.

RDCopt = VDCIDC

= V 2max

Pavs

5 Find the optimum load value for maxi-mizing PA efficiency.

RLopt = GRoptRDCopt

6Find the specifications of the DC andAC impedance matching networks (DC-IM and AC-IM).

M =

√RDCopt

Rpavs=

√V 2

maxPavs ·Rpavs

n =

√RL

RLopt=

√Pavs ·RL

GRoptV 2

max

21UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 22: Modeling and Design of High-Efficiency Power Amplifiers

Proposed Design Methodology II RFLaboratory

Step Step Description Equation

1

Find the Pavs of the power EPS andits related variables: optimum loadimpedance (Rpavs ), load voltage (Vpavs )and current (Ipavs ).

e.g. for a thermoelectric generator, theinternal series resistor of the EPS (Rs )

is constant, therefore: Rpavs = Rs ,Vpavs = VDC

2and Ipavs = VDC

2Rs.

2Fix the voltage in the PA DC-port as thehighest for a particular implementationrestriction (e.g. Vmax CMOS process.)

VDCopt = Vmax

3 Find the DC current that extracts the Pavsof the EPS. IDCopt = Pavs

Vmax

4Find the impedance of the PA DC-portthat maximizes the power extracted fromthe harvester.

RDCopt = VDCIDC

= V 2max

Pavs

5 Find the optimum load value for maxi-mizing PA efficiency.

RLopt = GRoptRDCopt

6Find the specifications of the DC andAC impedance matching networks (DC-IM and AC-IM).

M =

√RDCopt

Rpavs=

√V 2

maxPavs ·Rpavs

n =

√RL

RLopt=

√Pavs ·RL

GRoptV 2

max

22UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 23: Modeling and Design of High-Efficiency Power Amplifiers

Proposed Design Methodology II RFLaboratory

Step Step Description Equation

1

Find the Pavs of the power EPS andits related variables: optimum loadimpedance (Rpavs ), load voltage (Vpavs )and current (Ipavs ).

e.g. for a thermoelectric generator, theinternal series resistor of the EPS (Rs )

is constant, therefore: Rpavs = Rs ,Vpavs = VDC

2and Ipavs = VDC

2Rs.

2Fix the voltage in the PA DC-port as thehighest for a particular implementationrestriction (e.g. Vmax CMOS process.)

VDCopt = Vmax

3 Find the DC current that extracts the Pavsof the EPS. IDCopt = Pavs

Vmax

4Find the impedance of the PA DC-portthat maximizes the power extracted fromthe harvester.

RDCopt = VDCIDC

= V 2max

Pavs

5 Find the optimum load value for maxi-mizing PA efficiency.

RLopt = GRoptRDCopt

6Find the specifications of the DC andAC impedance matching networks (DC-IM and AC-IM).

M =

√RDCopt

Rpavs=

√V 2

maxPavs ·Rpavs

n =

√RL

RLopt=

√Pavs ·RL

GRoptV 2

max

23UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 24: Modeling and Design of High-Efficiency Power Amplifiers

Class A Study Case - PA Modeling I RFLaboratory

C0LRF L0

PA

CBypass

ACRF

DC

CBypass

GND

IPA

Ibias

RPA

Rbias

η =

0.5 · GR GR < 1 ;⇒ Im = IPA

12GR

GR ≥ 1;⇒ Vm = VC.

Where, GR =RDC

RL.

This efficiency is maximum when:

GRopt = 1

its maximum value is:

ηmax = 50%

24UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 25: Modeling and Design of High-Efficiency Power Amplifiers

Class A Study Case - PA Modeling II RFLaboratory

As a proof of concept a class A PA wasdesigned, simulated and implemented.

IPA f0 RL

1mA 100 kHz 1kΩ

The simulation setup uses the harmonicbalance simulation technique in the Ad-vanced Design System (ADS R©) soft-ware. VAC and RPA sweeps were imple-mented.

PA simulation resultsRPA Limit PDC PDC PL PL η η

(Ω) type |vac |φt w/o LC w L w/o L w L w/o L w L(mW) (mW) (mW) (mW) (%) (%)

0.5 Vm=VC 0.530 0.564 0.564 0.138 0.138 24.5 24.51.0 Vm=VC 1.181 1.127 1.127 0.545 0.545 48.3 48.21.5 Im=IPA 1.180 1.691 1.691 0.545 0.545 32.2 32.12.0 Im=IPA 1.180 2.254 2.254 0.545 0.545 24.2 24.1

C0LRF L0

PA

CBypass

ACRF

DC

CBypass

GND

IPA

Ibias

RPA

Rbias

The RPA sweep was implemented bya fixed current (IPA=1mA) and a VDCsweep. The circuit was simulatedwith and without the output LC tankfilter (Only C0).

25UNIVERSIDADE FEDERALDE SANTA CATARINA

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Page 26: Modeling and Design of High-Efficiency Power Amplifiers

Class A Study Case - PA Modeling III RFLaboratory

In the experimental setup the IPA wasfixed to 1 mA and the RPA was set withthe VDC . In this setup, VAC was in-cremented until the PA operates at thelimit of the class-A operation (Im = IPAor Vm=VC ).

PA experimental results

RPA Limit |vac |φt LC tank PDC PL η

(Ω) type (mW) (mW) (%)

0.50 Vm=VC 0.679 w/o 0.5002 0.1242 24.81.00 Vm=VC 1.516 w/o 10.003 0.5004 501.50 Im=IPA 1.516 w/o 15.002 0.5010 33.32.00 Im=IPA 1.516 w/o 2.002 0.5010 25

26UNIVERSIDADE FEDERALDE SANTA CATARINA

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Page 27: Modeling and Design of High-Efficiency Power Amplifiers

Class A Study Case - PA Modeling IV RFLaboratory

The predicted efficiency by the proposed PA model and the results(simulated and experimental) are plotted in the Figure

GR

27UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 28: Modeling and Design of High-Efficiency Power Amplifiers

Class A Study Case - ProposedMethodology (PA + Power EPS)

RFLaboratory

In order to verify experimentally the proposed methodology without thepractical limitations of the commercial harvesters and the impedancematching networks, we choose a scenario with the following specifi-cations: a emulated power EPS with Pavs = 1mW and Rpavs = 1kΩ, aresistive load of RL = 1kΩ, and f0 = 100 kHz.

Metodology ResultsVDCopt IDCopt RDCopt RLopt M n

1V 1mA 1kΩ 1kΩ 1 1

Experimental resultsRDC PEPS PDC PRF ηEPS ηDC/RF

1.001kΩ 2.004mW 1000.3 µW 500.4µW 50% 50 %

28UNIVERSIDADE FEDERALDE SANTA CATARINA

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Page 29: Modeling and Design of High-Efficiency Power Amplifiers

Conclusions RFLaboratory

• A design methodology for a generic PA fed by a power EPS wasproposed.

• As a proof of concept a class-A PA was designed, implementedand tested.

• The results reflect that the designed PA extracts the maximumavailable power of the source with its maximum efficiency.

• There is an open challenge on EPSs, Energy converters (i.e.PAs) and circuits that could take advantage of the use of powerspecifications instead of predefined voltage or current conditionbetween them.

29UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 30: Modeling and Design of High-Efficiency Power Amplifiers

Conclusions RFLaboratory

• A design methodology for a generic PA fed by a power EPS wasproposed.

• As a proof of concept a class-A PA was designed, implementedand tested.

• The results reflect that the designed PA extracts the maximumavailable power of the source with its maximum efficiency.

• There is an open challenge on EPSs, Energy converters (i.e.PAs) and circuits that could take advantage of the use of powerspecifications instead of predefined voltage or current conditionbetween them.

30UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 31: Modeling and Design of High-Efficiency Power Amplifiers

Conclusions RFLaboratory

• A design methodology for a generic PA fed by a power EPS wasproposed.

• As a proof of concept a class-A PA was designed, implementedand tested.

• The results reflect that the designed PA extracts the maximumavailable power of the source with its maximum efficiency.

• There is an open challenge on EPSs, Energy converters (i.e.PAs) and circuits that could take advantage of the use of powerspecifications instead of predefined voltage or current conditionbetween them.

31UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 32: Modeling and Design of High-Efficiency Power Amplifiers

Conclusions RFLaboratory

• A design methodology for a generic PA fed by a power EPS was proposed.• As a proof of concept a class-A PA was designed, implemented and tested.• The results reflect that the designed PA extracts the maximum available power of

the source with its maximum efficiency.• For maximizing the power on the load in a system powered by Power EPSs, the

traditional approach based only the system efficiency is inadequate. Furthermore,the designing of EPSs, Energy converters (i.e. PAs) and circuits that could takeadvantage of the use of power specifications instead of predefined voltage orcurrent condition is a open challenge.

Implanted Device WPTn

Implanted Power Supply

VDC

DC

RFWPT interface

(e.g. Inductive

link or

Antenna)

DC

RFRs

Power EPS

LO

AD

32UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 33: Modeling and Design of High-Efficiency Power Amplifiers

Acknowledgment RFLaboratory

The first author would like to thank COLCIENCIAS and the Pontificia Universidad Javeriana for the financial support.Also, the authors would like to thank the CNPq and the INCT/NAMITEC for their partial financial support and all thestudents of the Radio Frequency integrated circuits Group (GRF-UFSC) for the important discussions.

33UNIVERSIDADE FEDERALDE SANTA CATARINA

Page 34: Modeling and Design of High-Efficiency Power Amplifiers

References RFLaboratory

[1] S. Movassaghi, M. Abolhasan, J. Lipman, D. Smith, and A. Jamalipour, “Wireless body area networks: Asurvey”, IEEE Communications Surveys & Tutorials, vol. 16, no. 3, pp. 1658–1686, 2014.

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[3] J. C. Rudell, V. Bhagavatula, and W. C. Wesson, “Future integrated sensor radios for long-haulcommunication”, IEEE Commun. Mag., vol. 52, no. 4, pp. 101–109, 2014.

[4] R. W. Erickson and D. Maksimovic, Fundamentals of power electronics. New York: Springer, 2001.

[5] B. R. W. Stratakos Anthony J. and S. R. Sanders, “High-efficiency low-voltage dc-dc conversion for portableapplications.”, in Proc. Int. Workshop on Low-Power Design, Napa, CA. 1994, pp. 21–27.

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