mm-wave silicon sensors and active tags · sorin voinigescu, november 21, 2014 2 outline...

1

Mm-Wave Silicon Sensors Mm-Wave Silicon Sensors

and Active Tagsand Active Tags

Sorin VoinigescuSorin Voinigescu

November 21, 2014

Sorin Voinigescu, November 21, 2014 2

OutlineOutline

Introduction

Range (distance) sensors

Passive imaging sensors

Active 80-GHz tag

Technology options

Conclusions


Why mm-wave sensors?Why mm-wave sensors?

Work in hostile and poor visibility environments

where optical sensors fail

smoke, toxic gases, fire

night, fog, rain, heavy snow, mud

Higher resolution (compared to cellular/WiFi)

< 5mm


Mm-wave sensor classificationMm-wave sensor classification

Range (also altimeters) and velocity sensors

active imagers

transmit and receive function

Low noise broadband direct detection receivers

passive imagers (total power radiometers)

Tags

Backscatterers

passive (no gain, just detection)

active (detection and amplification)


ApplicationsApplications

Industrial range and Doppler sensors

Active/passive imagers for security and remote sensing

Autonomous navigation


New ApplicationsNew Applications

Autonomous robots

Autonomous drone swarms

Toy helicopters

www.xheli.com/?gclid=CL66go2iisICFRMoaQodlXwArQ

IoT tags

monitor every atom in the universe

sell billions of tags and RF transceivers

put data cloud in space

melt the universe ? ;-)

http://www.xheli.com/?gclid=CL66go2iisICFRMoaQodlXwArQ


Automotive Radar Automotive Radar

An FMCW Doppler radar = a direct conversion radio

Link Budget Equation

is the radar cross section of the target in m2.

Tx ANT

Rx ANT

PA

LNA

MIX

VCO

BBM

BBA

A/D

DSPhostile channel

PRX=

2PTX GTX GRX

43 r4


FMCW radar waveformsFMCW radar waveforms

Range

Velocity

fd = Doppler shift

c = speed of light

τ

∆fOSC

T

fOSC

∆f

t

t

∆f

f

0

τ

∆fOSC

T

fOSC

∆f

t

t

∆f

f

0

r=12

c

v=c fd

2 fOSC

r=12

c=c f T

2 fOSC

Stationary target

Moving target

TX

RX

TX

RX


Low noise passive imagersLow noise passive imagers

Det

ect.

LNA

Inte

g .

Det

ectG, T

LNA

∆fRF

TA+T

B

R, NEP τ

VO

fLF=

1

2

TR

TS=T

R+T

A

Det

ect.

LNA In

teg.

Det

ect

TREF

G, TLNA

∆fRF

TA+T

B

R, NEP τ

VO

fLF=

1

2

LS

Calibrate

MeasureT

R

TS=T

R+T

A

TMIN=2TATR 1 fRF

GG

2

Vo=kTB fRFkTS fRFGR

TA = antenna noise temperatureTR = receiver noise temperatureTS = system noise temperatureR = detector responsivity [V/W]NEP = noise equivalent power


Mm-Wave Active TagMm-Wave Active Tag

➢ Reflect signal from basestation back to basestation with ID

➢ Link budget similar to radar

➢ Requirements

➢ Low-power, ideally self-sufficient

➢ Very small form factor

➢ Long range operation (d > few meters)


OutlineOutline

Introduction

Distance (Range) Sensors

Passive imaging sensor at D-Band

Active 80-GHz tag

Technology options

Conclusions

12

FMCW distance sensor at 122 GHz FMCW distance sensor at 122 GHz

[M. Girma et al. EuMIC 2012]

Bosch fundedproject


Layout and PackagingLayout and Packaging

Chip: 2.2mm2.6mm Package: 7mmmm

130-nm BiCMOS9MW: SiGe HBT fT= 230 GHz, fMAX = 280 GHz

14

Distance Test with Corner Reflector

15

150-GHz monostatic single-chip 150-GHz monostatic single-chip sensorsensor

890 mW with both

prescalers on from

1.8V and 1.2V supplies

Built-in self-test

[I. Sarkas et al.CSICS 2012]

16

Layout and performance summaryLayout and performance summary

2.6mmx2.3mmTuning range 142-152 GHz

NF<10 dB, Pout >-6 dBm.

PN < -83 dBc/Hz at 1MHz

130nm SiGe BiCMOS 230/280GHz

VCO

Divider chain

LO dist

Block

2

1

1

Count

RX 1

2×76

145

115

Power(mW)

165

807Total

TX 1 230

145GHz Transceiver die: VCO range145GHz Transceiver die: VCO range

17

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4142

143

144

145

146

147

148

149

150

151

152

Coarse = 1.4V

Coarse = 0.8V

Coarse = 0VO

scill

atio

n F

requen

cy (G

Hz)

Fine Control (V)

•143-152 GHz tuning range•PN=-103dBc/Hz @10MHz•PDC = 72 mW

18

125-GHz Transceiver die: VCO range125-GHz Transceiver die: VCO range

•117-126.8 GHz tuning range

Receiver gain and noise figureReceiver gain and noise figure

19

142 143 144 145 146 147 148 149 150 151 152 1538

9

10

11

12

13

14

15

16

Gain

NF

Gai

n - D

SB

Nois

e Fig

ure

(dB

)LO Frequency (GHz)

13-15 dB gain, 23 dB of gain control in LNA

Low noise figure: 8.5-10.5dB

20

Transmitter gain/Pout controlTransmitter gain/Pout control

20

•TX output power states measured without external mm-wave equipment

Measured output powerMeasured output power

21

144 145 146 147 148 149 150 151 152 153-14

-13

-12

-11

-10

-9

-8

-7

-6

-5

-4

-3

Antenna port open

TX detector thru output- Antenna port terminated

Antenna port (after 6dB coupler)

TX P

ow

er (dB

m)

Frequency (GHz)

•Power at antenna port measured with ELVA power sensor•On-chip and external measurements track very well

22

LO detector powerLO detector power

23

Impedance Tuner: Reference Phase and Impedance Tuner: Reference Phase and Amplitude ChangeAmplitude Change

http://www.eecg.toronto.edu/~sorinv/MVI_4573.AVI

http://www.eecg.toronto.edu/~sorinv/MVI_4573.AVI

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Demo in Karlsruhe May 2013Demo in Karlsruhe May 2013


65-GHz multi-channel range sensor 65-GHz multi-channel range sensor

2-IQ receivers with differential transmitter

55-nm SiGe BiCMOS fT= 320 GHz, fMAX = 380 GHz

1.1/1.2/1.8V supplies, 24 mW


OutlineOutline

Introduction



Active 80-GHz tag

Technology options

Conclusions

27

165GHz passive imaging receiver165GHz passive imaging receiver

[E. Dacquay et al. IEEE Trans. MTT, March 2012]

● SiGe HBT process: fT=290 GHz, fMAX = 325 GHz

● PD = 95 mW

● LNA gain > 36 dB, NF <8 dB● NEP < 15 fW/HZ● NEDT < 0.4 K at 3 ms.

28

LayoutLayout

765mm

29

Output noise spectra, 1/f noise cornerOutput noise spectra, 1/f noise corner

30

Measured Responsivity and NETDMeasured Responsivity and NETD

slope=8 V/K


OutlineOutline

Introduction



Active 80-GHz tag

Technology options

Conclusions


mm-Wave active tag mm-Wave active tag

0.8mm0.55mm

Frequency: 77-81 GHz

G > 30 dB

NF < 7 dB

Si < -62 dBm

PD < 3 mW

Range > 10m when polled by

+10dBm BS

Wake-up Detector

Funded by Robert Bosch GmbH.


OutlineOutline

Introduction



Active 80-GHz tag

Technology options

Conclusions

•Slide 34

nMOSFET scalingnMOSFET scaling


SiGe HBT ScalingSiGe HBT Scaling

Both fT and fMAX continue to scale predictably


ConclusionsConclusions

First gen of mm-wave sensors (>1W)

New gen (<10mW)

Technology requirements

Outdoors: -50 to+100 C

G/mA, NF/mA, PN/mA

Small die & package <5mm2,

10 billion parts per year


CreditsCredits

Graduate students

Yannis Sarkas

Andreea Balteanu

Alex Tomkins

Eric Dacquay

Sadegh Dadash

Guy Alter

Collaborators

Dr. Juergen Hasch

Dr. Pascal Chevalier

Prof. Thomas Zwick

Mekdes Girma

Stefan Beer

NSERC, Robert Bosch GmbH for funding

STMicroelectronics for chip donations

Jaro Pristupa and CMC for CAD and

support

mm-wave silicon sensors and active tags · sorin voinigescu, november 21, 2014 2 outline...

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