SMTA PresentationMulti-Chip Module Technology Overviewp gy

September 26, 2012

Micropac Industries, Inc.

Solutions Through Technology

2Q2012

Ted PernaTechnical Director

Microcircuits

Solutions Through TechnologyMicropac at a Glance

Locations:• Garland, TX (Headquarters)• Juarez, Mexico

Product Lines:Product Lines:• Power Management• Sensors• Embedded Displays• Optocouplersp p

Markets• Space / Aerospace / Military• Industrial

M di l• Medical

Summary• Founded: 1963• Employees: 137Employees: 137• Revenue (2011): $20M• Public Company (MPAD)

CustomerFocused

Solutions Through Technology

Space Medical

Markets Served

Space Medical

52494 - Current

Heart TransplantBlood Gas

Analyzer Sensor

52494 CurrentLimiter - (EMU)

Spacesuit53278, 53503, 53504, 53506,

53507, 53513, 53514 Satellite Power

Distribution SystemsHall Effect Devices-

Optocoupler Array -CT Scanner and

Radiation DeliverySystem

Military Industrial

e cesCameras for MSL Rover

53287 – Industrial Power Controller

Gyro Sensor -Hellfire Missile Hall Effect Sensor-

Folding Wings- JSF 42149 – 200°C PWM Controller

42094 200°C

3CustomerFocused

53111- RelayBus Transfer Switch

42094 – 200 C Voltage Regulator52280- Heater

Aegis Radar

Solutions Through TechnologyQualifications and Certifications

• Military Certifications• Microcircuits; MIL-PRF-38534 “K” level (Space)

Semiconductors; MIL PRF 19500 “S” level (Space)• Semiconductors; MIL-PRF-19500 S” level (Space)• MIL-PRF-28750 (Relays)• NASA-STD-8739 (Soldering)( g)• NASA – Core Supplier• SSQ 25000 (Space Station) Supplier

O• Certification to ISO-9001-2008• Certification to AS9100C

UL CSA d CE b d t• UL, CSA and CE by product• ROHS by product

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Solutions Through TechnologyMicropac’s Space Exploration Involvement

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Solutions Through TechnologyMicropac’s Customers

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Solutions Through TechnologyWhat is an MCM?

3.3”5.0”

6.6 in217.5 in2

2.0”3.5”

• Reduction in Foot Print

• Thin Substrates

• Thin or Thick Film Circuit Technology 0.74”

1.3 in2

• Single and Double Side Construction

• Passives on Secondary Side

• Die and Wire Bond Technology 1.8”

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• Cost Reduction Possible Dependent on Complexity

Solutions Through TechnologySolid State Relay

A i l “P MOSFET O t l ”• A simple “Power MOSFET, Optocoupler” (Solid State Relay or SSR) includes• MOSFET• Photovoltaic• LED

• No moving partsg p• Silent, no contact bounce or “chatter” • No mechanical wear• No arcing• No arcing• Shock & vibration resistance

• Micropac includes other circuit elements t id b tt t l d t iti tto provide better control and to mitigate EOL degradation. Part derating and worst case analysis is critical.

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Solutions Through TechnologySolid State Power Controller

• Solid State Power Controllers (SSPC’s) expand on the capability of the SSR to isolate the control circuitry from the power circuitry and to switch power and provide:• Overload protectionp• Current limiting• Trip re-settable• Status reportingStatus reporting• Telemetry (current, temperature, etc)

• SSPC’s support high in-rush currents withstand repeated turn-currents, withstand repeated turn-on into overloads or shorts, and provide isolation and floating outputs

CustomerFocused

outputs

9

Solutions Through TechnologyImportant Design Considerations

• SSR’s and SSPC’s• Understand the output MOSFET power dissipated

during switching, and current limiting • Adhere to Safe Operating Area (SOA) curves• Understand the application

• Provide proper heatsink design• Ensure time for device to cool before resetting

• Need to protect from load voltages exceeding MOSFET ratingg• Proper transient protection and snubbing is a must

• Fast turn-off during current overload can result in very large transient voltage spike

• Consider the test environment as well as the actual application (e.g., long cables with large EMI filters provide significant inductance)

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Solutions Through TechnologyTypical MCM Module

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Solutions Through TechnologyMCM Material Selection

• PackagePackage

• Generally Custom – Covar material.• Typical Lead Time – 10 to 12 Weeks.

NRE T i ll $8K t $12K• NRE - Typically $8K to $12K.• Costly - $200 to $800 ea in Small Qity; Up to $100 ea in Qty of 500. • HTCC (High Temperature Cofired Ceramic)

• Substrate • Alumina or Beryllium Oxide (BeO).• Thin Substrates – 10 to 20 mils.• Thick Film Multilayer Printing• Thick Film Multilayer Printing.• Printed Resistors, Laser Trimmed

• Passive Components• Chip Resistors and Capacitors• SMT Components• Inductive Devices – Custom – Generally Home Built• Solder or Epoxy Attached

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• Solder or Epoxy Attached

Solutions Through TechnologyMCM Material Selection

• SemiconductorsSemiconductors• Transistors, FET’s, Diodes, OpAmps, and Monolithic IC’s.• All Die • High MOQ’s – 100’s to 1000 to wafer.• Radiation Hard Devices 100 to 1000 times the cost of commercial parts.• Difficult handle.• Die condition critical.• ObsolesceObsolesce

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Solutions Through TechnologyDesign Considerations

• Hermeticity

• Harsh environment (Temperature, Humidity, Radiation, Mechanical…)

• Thermal conductivity (Power Dissipation)• Thermal conductivity (Power Dissipation)

• Coefficient of Thermal Expansion (CTE) (Material Stack-up Mis-matches)

• Faster switching speeds due to shorter signal paths

• Device density vs # of circuit layers

• Thermal and mechanical shock

P k f fl t• Package surface flatness

• Mechanical strength, and rigidity

• CostCost

• Manufacturability, and Test

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Solutions Through TechnologyInterconnect - Wire Bond

1 mil Au Wire

Bonding Parameters• Temperature• Velocity• Time• Time• Energy• Force

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Solutions Through TechnologyWire Bond Interconnect

1 mil Au Wire

Bonding Parameters• Temperature• Velocity• Time• Time• Energy• Force

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Solutions Through TechnologyWire Bond Concerns

Wedge BondWedge Bond Outside of Pad

Broken Lead on Ball Bond

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Solutions Through TechnologyWire Bond Concerns

Wedge BondWedge Bond Outside of Pad

Broken Lead on Ball Bond

Intermetallic Formation

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Solutions Through TechnologyWire Bond Concerns

Wedge BondWedge Bond Outside of Pad

Broken Lead on Ball Bond

Intermetallic Formation

Ball Bond Lift Ball Bond Lift due to Pad Contamination Cratering Pad Metal Peeling

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Ball Bond Lift Ball Bond Lift due to Pad Contamination Cratering Pad Metal Peeling

Solutions Through TechnologySolid State Power Switch

• Three Channel Switch• 6 Amps per Channel

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6 ps pe C a e• 1.6 Watts Total Power Dissipation

Solutions Through TechnologyQuality Assurance Provisions

Device Screening per MIL-PRF-38534 Table C-IXDevice Screening per MIL PRF 38534 Table C IX

Test or Inspection

MIL-STD-883 RequirementReference ParagraphMethod Condition Class K Class H

Preseal Burn-In 1030 Optional Optional C.5.3N d t ti B d 2023 100 P t N/A C 5 4Nondestructive Bond

Pull2023 100 Percent N/A C.5.4

Internal Visual 2017 100 Percent 100 Percent C.5.5Temperature Cycling or

Thermal Shock10101011

CA, Minimum

100 PercentN/A

100 Percent C.5.6

Mechanical Shock orConstant Acceleration

20022001

B, (Y1 Direction Only)3000g's, Y1 Direction Only

100 Percent 100 Percent C.5.6

PIND 2020 A (Class H or K) or B.Condition A shall be used for Class H or K, unless otherwise specified.

100 Percent N/A C.5.7

Pre-Burn-In Electrical IAW Applicable Device Specification

100 Percent Optional C.5.8

Burn-In 1015 100 Percent 100 Percent C.5.9Final Electrical Test IAW Applicable Device 100 Percent 100 Percent C.5.10a ect ca est pp cab e e ce

Specification00 e ce t 00 e ce t C 5 0

Seal (Fine and Gross) 1014 100 Percent 100 Percent C.5.11Radiographic 2012 100 Percent N/A C.5.12

External Visual 2009 100 Percent 100 Percent C.5.13

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Note: Though commonly requested (as a custom screen), Class H does NOT include PIND.

Solutions Through TechnologyQuality Assurance Provisions

Micropac Industries, Inc – Screening Definitions

Micropac Term Description MIL-PRF-38534 ClassificationCOTS or Unscreened Unscreened, electrically tested at room temperature (or 3 Non-compliant

temperature, see specific datasheet). Suitable for engineering evaluation.

Screened to Class H (K or E) Device screening in accordance with MIL-PRF-38534, Table C-IX (Class E, H or K). No Element Evaluation or Quality Conformance Inspection.

Non-compliant

Screened to Class H (K or E) with Element Evaluation and QCI

Device screening in accordance with MIL-PRF-38534, Table C-IX (Class E, H or K). Element Evaluation and Quality Conformance Inspection performed at an additional quoted cost.

Non-compliant

Compliant to Class H (K or E) Qualification and screening fully in compliance to MIL-PRF-38534

Fully compliant to Class E, H or K

Custom Qualification and screening per customer specific Non-compliantrequirements

Note: Though commonly requested (as a custom screen), Class H does NOT include PIND.

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Solutions Through TechnologyTest Capabilities

• Temperature Cycle

• Constant Acceleration

• Life Test

• Wire Bond

In-House Capabilities

• PIND Test

• Thermal Shock

• Fine / Gross Leak

• Evaluations

• Die Shear

• Solderability

• X-Ray

• Electrical Test

• Burn-In

• Resistance to Solvents

• Lead Integrity

• Element Evaluation

• Steam Aging

Outside FacilitiesOutside Facilities

• Shock & Vibration

• Salt Spray

• SEM Analysis

• FIB Analysis

CustomerFocused

• Residual Gas Analysis • Auger Analysis

Solutions Through TechnologyDesign Tools

Hardware Design ToolsDx DesignerPower PCB3D P i i

Software Design ToolsPSpiceLTSpiceL b i 3D Printing

AutoCADSolidWorks

LabviewVisual Basic

Northwest Analyst

Examples of Failure Analysis Tools

Electron Scanning Microscope

(SEM)

Focused Ion Beam (FIB)

Material Element Analysis (Auger)

Cross-sections

CustomerFocused

(SEM)

Micropac Industries IncMicropac Industries, Inc.

Solutions Through Technology

Thank You