micro stereo lithography

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    presentedby

    a a

    IITKharagpur

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    ob ects

    Micro

    stereolithography is

    useful

    for

    instantaneous

    Packagingofsensorsetc.

    cromo ng

    as

    master

    pattern

    Microdevices

    Biomedical

    Microrobotics

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    Im lementation

    Point

    by

    point

    or

    line

    by

    line

    scanning

    technique o e ayer nonego w t t e e po act vemas

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    MiniatureSizeControl

    XY

    Plane :

    by

    laser/lightsource

    Zdirection :

    Controlthepenetrationdepth

    andtherebythe

    cur ng ept o eachpolymerised

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    MiniatureSizeControlAworkingcurveforcontrollingcuringdepthinSLbasedonthephotopolymers

    thresholdexposure:

    Cd =Dpln(E/Ec),where Cd=thecuringdepth, = aserpower Ec =thresholdpowerforpolymerizationtooccur, Dp =thepenetrationdepthofthelaserintothesolution,

    Dp isdefinedviatheBeerLambertlawas:

    Dp =1/{2.3(I[I]

    +UVA[UVA])}

    w ere I= molarextinctioncoefficientoftheinitiator, [I]=initiatorconcentration, UVA=molarextinctioncoefficientoftheUVabsorber [UVA]=UVabsorberconcentration.

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    ACOUSTOOPTIC

    MODULATOR

    n sanacous oop c crys aw erethelightpassingthroughthecrystalis

    diffractedor

    transmitted

    depending

    on

    the

    .

    Whenthefixedfrequencydrivesignalis

    thesignal

    is

    off

    the

    light

    passes

    through

    the

    crystalwithoutdiffraction.

    Theamountoflightdiffracteddependson

    the

    amplitude

    of

    the

    drive

    signal.

    Thedrivesignalisgeneratedfromthepatterntobeexposed.Bycontrollingthe

    ofthe

    exposure

    beam

    is

    controlled.

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    cous o

    p c

    o u a or

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    AcoustoOptic

    Deflector

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    gratinggenerated

    by

    an

    acoustic

    wave

    inside

    asolid

    medium.

    Thecompressionandrarefactionsofmediumgeneratedbytheacousticwaveproduceaperiodicindexvariationandformaphasegrating.

    Alaserbeamisdiffractedaccordingtothegratingformulam. =

    2d

    sin

    wheremisaninteger, thewavelengthoflaser,anddisthegratingspacing.

    Ifthewavelengths oftheacousticwaveisequaltod,the

    diffraction

    condition

    for

    m=1

    becomessin = /2s Foranacousticwavelengthofabout103 m,thediffractionorder

    istypica yont eor ero 103 ra . Thediffractionangleofthelaserbeamischangedwhen

    frequencyof

    the

    acoustic

    wave

    is

    swept

    from

    f1to

    f2

    Acousto OpticalDeflector isusefulwhen ScanFieldissmall HighScanRateandRandomaccessibilityisimportant.

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    di italmirrordevice

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    PhotographsoftheintegratedmicrostereolithographyprototypeapparatusdevelopedatEPFL,Switzerland

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    Features

    Objectsmadeofafewhundredtoafewthousandsoflayers

    About3to6layersperminute,whichcorrespondstoanaverage

    of1.5

    mm

    per

    hour.

    Thisdevelopedsystemconsistsofeightelements: AComputerAidedDesignenvironmentsupportingsolidor

    surfacemodellin ;

    Aresin

    bath

    with

    an

    integrated

    high

    resolution

    translation

    stage

    andcomponentbuiltplatform; . Anopticalshutter;

    Adiffractive

    optical

    element

    designed

    to

    re

    distribute

    the

    rra anceo e aser eam roma auss an oa op a pro e; Apolysilicon thinfilmtwistednematic SVGAresolution(800

    multipliedby600)spatiallightmodulator; Amultielementlithographicreductionlenssystem;and a

    comprehensivecontrol

    system.

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    Ste s

    Each

    layer

    image

    of

    object

    is

    transferred

    to

    the

    Digital

    resin

    illuminated

    resintocreatethenext10mlayerontopofthe

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    Ca abilities

    Process

    time

    2

    3

    hour

    per

    object as ess process

    Layerbylayerfabricationofmicrostructuresby

    pro ect on

    o

    s ce

    magescreate

    rom

    3

    computerdesign

    tan ar e ormatrequ re

    10

    m

    resolution;

    lateral

    and

    verticalMaximumfieldsize10.24mmx7.68mm

    Structuralhei htseveralmillimeters

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    g ta

    crom rror ev ce MEMSdevicedevelopedatTexasInstruments,in1987

    ADMDchiphasonitssurfaceseveralhundred

    thousand

    microscopic

    mirrors

    arranged

    in

    a

    rectan ulararra

    which

    corres ond

    to

    the

    ixels

    in

    the

    imagetobedisplayed.

    MirrorsareofthinfilmofAluminiumalloyof16micronacross.

    Thenumber

    of

    mirrors

    corresponds

    to

    the

    resolution

    of

    theprojectedimage.800x600,1024x768,1280x720

    Themirrorscanbeindividuallyrotated1012,toanonoroffstate.

    eitherthroughthelensorontoaheatsink (calledalightdump).

    Two airsofelectrodescontrol ositionofmirrorb electrostaticattraction.

    Capableof

    operation

    for

    100000

    hours

    without

    failure

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    Di italMicromirror Device DMDThedigitalmicromirrordevice

    is

    amicro

    electromechanicalsystems(MEMS)arrayofa um n um a oymicromirrors,

    monolithicall inte ratedontoandcontrolledbyanunderlyingsiliconCMOS

    -

    memory(SRAM)array

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    Creationofshadesb DMDTherapidrepositioningof

    switchingbetween'on'and'off')allowstheDMD

    to

    vary

    the

    intensity

    of

    the

    lightbeingreflectedout,

    shadesofgreyinaddition

    towhite

    mirror

    in

    'on'

    Top down view of landed mirrors

    position)andblack(mirrorin'off'position).

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    conventionalstereolitho ra h

    Testcom onentmadewithaconventionalstereolithography

    machine

    Testcomponentmadewithsmallspot

    technologyby

    Proform Test

    com onent

    made

    of

    AG microstereolithography

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    A lications

    Scale model of a small car, madeof 673 layers of 5 micron each

    Three interwoven springshaving smooth surfaces

    Part of a hearing aid Double-end connector fluidic

    pipes for cell-bilogy applications

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