memristor seminar report
TRANSCRIPT
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1. INTRODUCTION
Generally when most people think about electronics, they may initially think of
products such as cell phones, radios, laptop computers, etc. others, having some
engineering background, may think of resistors, capacitors, etc. which are the basic
components necessary for electronics to function. Such basic components are fairly
limited in number and each having their own characteristic function.
Memristor theory was formulated and named by Leon Chua in a 1971 paper.
Chua strongly believed that a fourth device existed to provide conceptual symmetry with
the resistor, inductor, and capacitor. This symmetry follows from the description of basic
passive circuit elements as defined by a relation between two of the four fundamental
circuit variables. A device linking charge and flux (themselves defined as time integrals
of current and voltage), which would be the memristor, was still hypothetical at the time.
However, it would not be until thirty-seven years later, on April 30, 2008, that a team at
HP Labs led by the scientist R. Stanley Williams would announce the discovery of a
switching memristor. Based on a thin film of titanium dioxide, it has been presented as an
approximately ideal device.
The reason that the memristor is radically different from the other fundamental
circuit elements is that, unlike them, it carries a memory of its past. When you turn off
the voltage to the circuit, the memristor still remembers how much was applied before
and for how long. That's an effect that can't be duplicated by any circuit combination of
resistors, capacitors, and inductors, which is why the memristor qualifies as a
fundamental circuit element.
The arrangement of these few fundamental circuit components form the basis of
almost all of the electronic devices we use in our everyday life. Thus the discovery of a
brand new fundamental circuit element is something not to be taken lightly and has the
potential to open the door to a brand new type of electronics. HP already has plans to
implement memristors in a new type of non-volatile memory which could eventually
replace flash and other memory systems.
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2. HISTORY
The transistor was invented in 1925 but lay dormant until finding a corporate
champion in BellLabs during the 1950s. Now another groundbreaking electronic circuit
may be poised for the same kind of success after laying dormant as an academic curiosity
for more than three decades. Hewlett-Packard Labs is trying to bring the memristor, the
fourth passive circuit element after the resistor, and the capacitor the inductor into the
electronics mainstream. Postulated in 1971, the “memory resistor” represents a potential
revolution in electronic circuit theory similar to the invention of transistor.
The history of the memristor can be traced back to nearly four decades ago when
in 1971, Leon Chua, a University of California, Berkeley, engineer predicted that there
should be a fourth passive circuit element in addition to the other three known passive
elements namely the resistor, the capacitor and the inductor. He called this fourth element
a “memory resistor” or a memristor. Examining the relationship between charge, current,
voltage and flux in resistors, capacitors, and inductors in a 1971 paper, Chua postulated
the existence of memristor. Such a device, he figured, would provide a similar
relationship between magnetic flux and charge that a resistor gives between voltage and
current. In practice, that would mean it acted like a resistor whose value could vary
according to the current passing through it and which would remember that
value even after the current disappeared.
Fig1. The Simplest Chua’s Circuit. Fig2. Realization of Four Element Chua’s Circuit, NR
is Chua Diode. Fig3. Showing Memristor as Fourth Basic Element. But the hypothetical
device was mostly written off as a mathematical dalliance. However, it took more than
three decades for the memristor to be discovered and come to life. Thirty years after
Chua’s Proposal of this mysterious device, HP senior fellow Stanley Williams and his
group were working on molecular electronics when they started to notice strange
behavior in their devices. One of his HP collaborators, Greg Snider, then rediscovered
Chua's work from 1971. Williams spent several years reading and rereading Chua's
papers. It was then that Williams realized that their molecular devices were really
memristors.
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Fig2.1. The Simplest Chua’s Circuit
Fig2.2 Realization of Four Element Fig2.3 Showing Memristor as Fourth
Chua’s Circuit Basic Element
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3.NEED FOR MEMRISTOR
A memristor is one of four basic electrical circuit components, joining the
resistor, capacitor, and inductor. The memristor, short for “memory resistor” was first
theorized by student Leon Chua in the early 1970s. He developed mathematical equations
to represent the memristor, which Chua believed would balance the functions of the other
three types of circuit elements.
The known three fundamental circuit elements as resistor, capacitor and
inductor relates four fundamental circuit variables as electric current, voltage, charge and
magnetic flux. In that we were missing one to relate charge to magnetic flux. That is
where the need for the fourth fundamental element comes in. This element has been
named as memristor.
Memristance (Memory + Resistance) is a property of an Electrical Component
that describes the variation in Resistance of a component with the flow of charge. Any
two terminal electrical component that exhibits Memristance is known as a Memristor.
Memristance is becoming more relevant and necessary as we approach smaller circuits,
and at some point when we scale into nano electronics, we would have to take
memristance into account in our circuit models to simulate and design electronic circuits
properly. An ideal memristor is a passive two-terminal electronic device that is built to
express only the property of memristance (just as a resistor expresses resistance and an
inductor expresses inductance). However, in practice it may be difficult to build a 'pure
memristor,' since a real device may also have a small amount of some other property,
such as capacitance (just as any real inductor also has resistance).A common analogy for
a resistor is a pipe that carries water. The water itself is analogous to electrical charge, the
pressure at the input of the pipe is similar to voltage, and the rate of flow of the water
through the pipe is like electrical current. Just as with an electrical resistor, the flow of
water through the pipe is faster if the pipe is shorter and/or it has a larger diameter. An
analogy for a memristor is an interesting kind of pipe that expands or shrinks when water
flows through it. If water flows through the pipe in one direction, the diameter of the pipe
increases, thus enabling the water to flow faster. If water flows through the pipe in the
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opposite direction, the diameter of the pipe decreases, thus slowing down the flow of
water. If the water pressure is turned off, the pipe will retain it most recent diameter until
the water is turned back on. Thus, the pipe does not store water like a bucket (or a
capacitor) – it remembers how much water flowed through it.
Possible applications of a Memristor include Nonvolatile Random Access
Memory (NVRAM), a device that can retain memory information even after being
switched off, unlike conventional DRAM which erases itself when it is switched off.
Another interesting application is analog computation where a memristor will be able to
deal with analog values of data and not just binary 1s and 0s.
Figure 3.1 Fundamental circuit Elements and Variables.
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4. TYPES OF MEMRISTOR
• Titanium dioxide memristor
• Polymeric memristor
• Spin memristive systems
• Magnetite memristive systems
• Resonant tunneling diode memristor
4.1 Titnium Doxide memristor:-
Interest in the memristor revived in 2008 when an experimental solid state version
was reported by R. Stanley Williams of Hewlett Packard. A solid-state device could not
be constructed until the unusual behavior of nanoscale materials was better understood.
The device neither uses magnetic flux as the theoretical memristor suggested, nor stores
charge as a capacitor does, but instead achieves a resistance dependent on the history of
current using a chemical mechanism.
The HP device is composed of a thin (5 nm) titanium dioxide film between two
electrodes. Initially, there are two layers to the film, one of which has a slight depletion
of oxygen atoms. The oxygen vacancies act as charge carriers, meaning that the depleted
layer has a much lower resistance than the non-depleted layer. When an electric field is
applied, the oxygen vacancies drift (see Fast ion conductor), changing the boundary
between the high-resistance and low-resistance layers. Thus the resistance of the film as a
whole is dependent on how much charge has been passed through it in a particular
direction, which is reversible by changing the direction of current. Since the HP device
displays fast ion conduction at nanoscale, it is considered a nanoionic device.
Memristance is displayed only when both the doped layer and depleted layer contribute
to resistance. When enough charge has passed through the memristor that the ions can no
longer move, the device enters hysteresis. It ceases to integrate q=∫Idt but rather keeps q
at an upper bound and M fixed, thus acting as a resistor until current is reversed.
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Memory applications of thin-film oxides had been an area of active investigation
for some time. IBM published an article in 2000 regarding structures similar to that
described by Williams.Samsung has a pending U.S. patent application for several oxide-
layer based switches similar to that described by Williams. Williams also has a pending
U.S. patent application related to the memristor construction.
Although the HP memristor is a major discovery for electrical engineering theory,
it has yet to be demonstrated in operation at practical speeds and densities. Graphs in
Williams' original report show switching operation at only ~1 Hz. Although the small
dimensions of the device seem to imply fast operation, the charge carriers move very
slowly. In comparison, the highest known drift ionic mobilities occur in advanced
superionic conductors, such as rubidium silver iodide with about 2×10−4 cm²/(V·s)
conducting silver ions at room temperature. Electrons and holes in silicon have a mobility
~1000 cm²/(V·s), a figure which is essential to the performance of transistors. However, a
relatively low bias of 1 volt was used, and the plots appear to be generated by a
mathematical model rather than a laboratory experiment.
4.2 Polymeric memristor:-
In July 2008, Victor Erokhin and Marco P. Fontana, in Electrochemically
controlled polymeric device: a memristor (and more) found two years ago,claim to have
developed a polymeric memristor before the titanium dioxide memristor more recently
announced.
4.3 Spin memristive systems:-
A fundamentally different mechanism for memristive behavior has been proposed
by Yuriy V. Pershin and Massimiliano Di Ventra in their paper "Spin memristive
systems". The authors show that certain types of semiconductor spintronic structures
belong to a broad class of memristive systems as defined by Chua and Kang. The
mechanism of memristive behavior in such structures is based entirely on the electron
spin degree of freedom which allows for a more convenient control than the ionic
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transport in nanostructures. When an external control parameter (such as voltage) is
changed, the adjustment of electron spin polarization is delayed because of the diffusion
and relaxation processes causing a hysteresis-type behavior.
This result was anticipated in the study of spin extraction at semiconductor/ferromagnet
interfaces,but was not described in terms of memristive behavior. On a short time scale,
these structures behave almost as an ideal memristor this result broadens the possible
range of applications of semiconductor spintronics and makes a step forward in future
practical application of the concept of memristive systems.
4.4 Manganite memristive systems:-
Although not described using the word "memristor", a study was done of bilayer
oxide films based on manganite for non-volatile memory by researchers at the University
of Houston in 2001. Some of the graphs indicate a tunable resistance based on the
number of applied voltage pulses similar to the effects found in the titanium dioxide
memristor materials described in the Nature paper "The missing memristor found".
4.5 Resonant Tunneling Diode Memristor:-
In 1994, F. A. Buot and A. K. Rajagopal of the U.S. Naval Research Laboratory
demonstrated that a ‘bow-tie’ current-voltage (I-V) characteristics occurs in
AlAs/GaAs/AlAs quantum-well diodes containing special doping design of the spacer
layers in the source and drain regions, in agreement with the published experimental
results. This ‘bow-tie’ current-voltage (I-V) characteristic is sine qua non of a memristor
although the term memristor is not explicitly mentioned in their papers. No magnetic
interaction is involved in the analysis of the ‘bow-tie’ I-V characteristics.
.
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5. MEMRISTOR THEORY AND ITS PROPERTIES
5.1 Definition of Memristor:-
“The memristor is formally defined as a two-terminal element in which the
magnetic flux Φm between the terminals is a function of the amount of electric charge q
that has passed through the device.”
Figure 5.1. Symbol of Memristor.
Chua defined the element as a resistor whose resistance level was based on the
amount of charge that had passed through the memristor
5.2 Memristance:-
Memristance is a property of an electronic component to retain its resistance
level even after power had been shut down or lets it remember (or recall) the last
resistance it had before being shut off.
5.3 Theory:-
Each memristor is characterized by its memristance function describing the
charge-dependent rate of change of flux with charge.
……………………………….5.3.1
Noting from Faraday's law of induction that magnetic flux is simply the
time integral of voltage, and charge is the time integral of current, we may write the more
convenient form
...............................5.3.2
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It can be inferred from this that memristance is simply charge-dependent
resistance. . i.e.
V(t) = M (q(t))*I(t)………………………………............5.3.3
3
This equation reveals that memristance defines a linear relationship between
current and voltage, as long as charge does not vary. Of course, nonzero current implies
instantaneously varying charge. Alternating current, however, may reveal the linear
dependence in circuit operation by inducing a measurable voltage without net charge
movement as long as the maximum change in q does not cause much change in M.
The power consumption characteristic recalls that of a resistor, I2R.
………………………………..5.3.4
As long as M (q(t)) varies little, such as under alternating current, the memristor
will appear as a resistor. If M (q(t)) increases rapidly, however, current and power
consumption will quickly stop.
5.4 Magnetic flux in a passive device:-
In circuit theory, magnetic flux Φm typically relates to Faraday's law of induction,
which states that the voltage in terms of energy gained around a loop (electromotive
force) equals the negative derivative of the flux through the loop:
……………………………………………………5.4.1This notion may be extended by analogy to a single passive device. If the circuit
is composed of passive devices, then the total flux is equal to the sum of the flux
components due to each device. For example, a simple wire loop with low resistance will
have high flux linkage to an applied field as little flux is "induced" in the opposite
direction. Voltage for passive devices is evaluated in terms of energy lost by a unit of
charge:
…………………………………………………..5.4.2
…………………………………………………..5.4.3
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Observing that Φm is simply equal to the integral of the potential drop between
two points, we find that it may readily be calculated, for example by an operational
amplifier configured as an integrator.
Two unintuitive concepts are at play:
Magnetic flux is generated by a resistance in opposition to an applied field or
electromotive force. In the absence of resistance, flux due to constant EMF increases
indefinitely. The opposing flux induced in a resistor must also increase indefinitely so
their sum remains finite.
Any appropriate response to applied voltage may be called "magnetic flux."
The upshot is that a passive element may relate some variable to flux without
storing a magnetic field. Indeed, a memristor always appears instantaneously as a
resistor. As shown above, assuming non-negative resistance, at any instant it is
dissipating power from an applied EMF and thus has no outlet to dissipate a stored field
into the circuit. This contrasts with an inductor, for which a magnetic field stores all
energy originating in the potential across its terminals, later releasing it as an
electromotive force within the circuit.
5.5 Physical restrictions on M (q):-
An applied constant voltage potential results in uniformly increasing Φm.
Numerically, infinite memory resources, or an infinitely strong field, would be required
to store a number which grows arbitrarily large. Three alternatives avoid this physical
impossibility:
M(q) approaches zero, such that Φm = ∫M(q)dq = ∫M(q(t))I dt remains bounded
but continues changing at an ever-decreasing rate. Eventually, this would encounter some
kind of quantization and non-ideal behavior.
M(q) is cyclic, so that M(q) = M(q − Δq) for all q and some Δq, e.g. sin2(q/Q).
The device enters hysteresis once a certain amount of charge has passed through,
or otherwise ceases to act as a memristor.
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5.5 Current vs. Voltage characteristics:-
This new circuit element shares many of the properties of resistors and shares the
same unit of measurement (ohms). However, in contrast to ordinary resistors, in which
the resistance is permanently fixed, memristance may be programmed or switched to
different resistance states based on the history of the voltage applied to the memristance
material. This phenomena can be understood graphically in terms of the relationship
between the current flowing through a memristor and the voltage applied across the
memristor.
In ordinary resistors there is a linear relationship between current and voltage so
that a graph comparing current and voltage results in a straight line. However, for
memristors a similar graph is a little more complicated as shown in Fig. 3 illustrates the
current vs. voltage behavior of memristance.
In contrast to the straight line expected from most resistors the behavior of a
memristor appear closer to that found in hysteresis curves associated with magnetic
materials. It is notable from Fig. 3 that two straight line segments are formed within the
curve. These two straight line curves may be interpreted as two distinct resistance states
with the remainder of the curve as transition regions between these two states.
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Figure-5.2. Current vs. Voltage curve demonstrating hysteretic effects of memristance.
Fig. 6 illustrates an idealized resistance behavior demonstrated in accordance
with Fig.7 wherein the linear regions correspond to a relatively high resistance (RH) and
lowresistance (RL) and the transition regions are represented by straight lines.
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Figure 5.3 Idealized hysteresis model of resistance vs. voltage for memristance switch.
Thus for voltages within a threshold region (-VL2<V<VL1 in Fig. 4) either a high
or low resistance exists for the memristor. For a voltage above threshold VL1 the
resistance switches from a high to a low level and for a voltage of opposite polarity above
threshold VL2 the resistance switches back to a high resistance.
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6. WORKING OF MEMRISTOR
Figure 6.1 Al/TiO2 or TiOX /Al “Sandwich”
The memristor is composed of a thin (5 nm) titanium dioxide film between two
electrodes as shown in figure 5(a) above. Initially, there are two layers to the film, one of
which has a slight depletion of oxygen atoms. The oxygen vacancies act as charge
carriers, meaning that the depleted layer has a much lower resistance than the non-
depleted layer. When an electric field is applied, the oxygen vacancies drift changing the
boundary between the high-resistance and low-resistance layers.
6.1 Operation as a switch:-
For some memristors, applied current or voltage will cause a great change in
resistance. Such devices may be characterized as switches by investigating the time and
energy that must be spent in order to achieve a desired change in resistance. Here we will
assume that the applied voltage remains constant and solve for the energy dissipation
during a single switching event. For a memristor to switch from Ron to Roff in time Ton to
Toff, the charge must change by ΔQ = Qon−Qoff.
6.1.1
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To arrive at the final expression, substitute V=I(q)M(q), and then ∫dq/V = ∆Q/V
for constant V. This power characteristic differs fundamentally from that of a metal oxide
semiconductor transistor, which is a capacitor-based device. Unlike the transistor, the
final state of the memristor in terms of charge does not depend on bias voltage.
The type of memristor described by Williams ceases to be ideal after switching
over its entire resistance range and enters hysteresis, also called the "hard-switching
regime. Another kind of switch would have a cyclic M(q) so that each off-on event would
be followed by an on-off event under constant bias. Such a device would act as a
memristor under all conditions, but would be less practical.
6.2 Analog of Memristor:-
A common analogy for a resistor is a pipe that carries water. The water itself is
analogous to electrical charge, the pressure at the input of the pipe is similar to voltage, and
the rate of flow of the water through the pipe is like electrical current. Just as with an
electrical resistor, the flow of water through the pipe is faster if the pipe is shorter and/or it
has a larger diameter.
An analogy for a memristor is an interesting kind of pipe that expands or shrinks
when water flows through it. If water flows through the pipe in one direction, the diameter
of the pipe increases, thus enabling the water to flow faster. If water flows through the pipe
in the opposite direction, the diameter of the pipe decreases, thus slowing down the flow of
water. If the water pressure is turned off, the pipe will retain it most recent diameter until
the water is turned back on. Thus, the pipe does not store water like a bucket (or a
capacitor) – it remembers how much water flowed through it.
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7. POTENTIAL APPLICATIONS
Figure7.1.showing 17 memristors in a row
Thus the resistance of the film as a whole is dependent on how much charge has
been passed through it in a particular direction, which is reversible by changing the
direction of current. Since the memristor displays fast ion conduction at nanoscale, it is
considered a nanoionic device .Figure 5(b) shows the final memristor component
Williams' solid-state memristors can be combined into devices called crossbar
latches, which could replace transistors in future computers, taking up a much smaller
area. They can also be fashioned into non-volatile solid-state memory, which would
allow greater data density than hard drives with access times potentially similar to
DRAM, replacing both components. HP prototyped a crossbar latch memory using the
devices that can fit 100 gigabits in a square centimeter. HP has reported that its version of
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the memristor is about one-tenth the speed of DRAM. The devices' resistance would be
read with alternating current so that they do not affect the stored value. Some patents
related to memristors appear to include applications in programmable logic, signal
processing, neural networks, and control systems. Recently, a simple electronic circuit
consisting of an LC contour and a memristor was used to model experiments on adaptive
behavior of unicellular organisms. It was shown that the electronic circuit subjected to a
train of periodic pulses learns and anticipates the next pulse to come, similarly to the
behavior of slime molds Physarum polycephalum subjected to periodic changes of
environment. Such a learning circuit may find applications, e.g., in pattern recognition.
7.1 MEMRISTOR-THE FOURTH BASIC CIRCUIT ELEMENT:-
From the circuit-theoretic point of view, the three basic two-terminal circuit
elements are defined in terms of a relationship between two of the four fundamental
circuit variables, namely; the current i, the voltage v, the charge q, and the flux-linkage
cp. Out of the six possible combinations of these four variables, five have led to well-
known relationships . Two of these relationships are already given by 9 Q(t) = ò ∞
I (t) dt and O (t) = ò ∞ v(t) dt.
. Three other relationships are given, respectively, by the axiomatic definition of
the three classical circuit elements, namely, the resistor (defined by a relationship
between v and i), the inductor (defined by a relationship between cp and i), and the
capacitor defined by a relationship between q and v). Only one relationship remains
undefined, the relationship between o and q. From the logical as well as axiomatic points
of view, it is necessary for the sake of completeness to postulate the existence of a fourth
basic two-terminal circuit element which is characterized by a o-q curve. This element
will henceforth be called the memristor because, as will be shown later, it behaves
somewhat like a nonlinear resistor with memory. The proposed symbol of a memristor
and a hypothetical o-q curve are shown in Fig. l(a). Using a ,mutated , a memristor with
any prescribed o-q curve can be realized by connecting an appropriate nonlinear resistor,
inductor, or capacitor across port 2 of an M-R mutated, an M-L mutated, and an M-C
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mutated, as shown in Fig. l(b), (c), and (d), respectively. These mutators, of which there
are two types of each, are defined and characterized in Table I.3
Hence, a type-l M-R mutated would transform the VR -IR< curve of the nonlinear
resistor f(VR, IR)=O into the corresponding o-q curve f(o,q)=O of a memristor. In
contrast to this, a type-2 M-R mutated would transform the IR,VR curve of the nonlinear
resistor f(IR,VR)=O into the corresponding o-q curve f(o,q) = 0 of a memristor. An
analogous transformation is realized with an M-L mutated (M-C mutated) with respect to
the ((oL,iL) or (iL, oL) [(vC, qC) or (qC, vC)] curve of a nonlinear inductor
(capacitor).10 t
(a) Memristor and its o-q curve.
(b). Memristor basic realization 1: M-R mutated terminated by nonlinear Resistor R.
(c) Memristor basic realization 2: M-L mutated terminated by nonlinear inductor L
(d) Memristor basic realization M-C mutated
terminated by nonlinear capacitor C
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8. FEATURES
The reason that the memristor is radically different from the other fundamental
circuit elements is that, unlike them, it carries a memory of its past. When you turn off
the voltage to the circuit, the memristor still remembers how much was applied before
and for how long. That's an effect that can't be duplicated by any circuit combination of
resistors, capacitors, and inductors, which is why the memristor qualifies as a
fundamental circuit element.
8.1 New Memristor Could Make Computers Work like HumanBrains:-
After the resistor, capacitor, and inductor comes the memristor. Researchers at
HP Labs have discovered a fourth fundamental circuit element that can't be replicated by
a11 combination of the other three. The memristor (short for "memory resistor") is
unique because of its ability to, in HP's words, "[retain] a history of the information it has
acquired." HP says the discovery of the memristor paves the way for anything from
instant on computers to systems that can "remember and associate series of events in a
manner similar to the way a human brain recognizes patterns." Such brain-like systems
would allow for vastly improved facial or biometric recognition, and they could be used
to make appliances that "learn from experience."
In PCs, HP foresees memristors being used to make new types of system
memory that can store information even after they lose power, unlike today's DRAM.
With memristor-based system RAM, PCs would no longer need to go through a boot
process to load data from the hard drive into the memory, which would save time and
power especially since users could simply switch off systems instead of leaving them in a
"sleep" mode
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8.2 Memristors Make Chips Cheaper:-
The first hybrid memristor-transistor chip could be cheaper and more energy
efficient. Entire industries and research fields are devoted to ensuring that, every
year,computers continue getting faster. But this trend could begin to slow down as the
components used in electronic circuits are shrunk to the size of just a few
atoms.Researchers at HP Labs in Palo Alto, CA, are betting that a new fundamental
electronic component--the memristor--will keep computer power increasing at this rate
for years to come.
They are nanoscale devices with unique properties: a variable resistance and the
ability to remember the resistance even when the power is off.Increasing performance has
usually meant shrinking components so that more can be packed onto a circuit. But
instead, Williams's team removes some transistors and replaces them with a smaller
number of memristors. "We're not trying to crowd more transistors onto a chip or into a
particular circuit," Williams says. "Hybrid memristor-transistor chips really have the
promise for delivering a lot more performance."12 A memristor acts a lot like a resistor
but with one big difference: it can change resistance depending on the amount and
direction of the voltage applied and can remember its resistance even when the voltage is
turned off. These unusual properties make them interesting from both a scientific and an
engineering point of view. A single memristor can perform the same logic functions as
multiple transistors, making them a promising way to increase computer power.
Memristors could also prove to be a faster, smaller, more energy-efficient alternative to
flash storage.
8.3 Memristor as Digital and Analog:-
A memristive device can function in both digital and analog forms, both
having very diverse applications. In digital mode, it could substitute conventional solid-
state memories (Flash) with high-speed and less steeply priced nonvolatile random access
memory (NVRAM). Eventually, it would create digital cameras with no delay between
photos or computers that save power by turning off when not needed and then turning
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back on instantly when needed.
8.4 No Need of Rebooting:-
The memristor's memory has consequences:The reason computers have to be
rebooted every time they are turned on is that their logic circuits are incapable of holding
their bits after the power is shut off. But because a memristor can remember voltages, a
memristor-driven computer would arguably never need a reboot. “You could leave all
your Word files and spreadsheets open, turn off your computer, and go get a cup of
coffee or go on vacation for two weeks,” says Williams. “When you come back, you turn
on your computer and everything is instantly on the screen exactly the way you left
it.”that keeps memory powered. HP says memristor-based RAM could one day replace
DRAM altogether.
8.5 Memristors for Nanoscale electronics:-
The main objective in the electronic chip design is to move computing beyond
the physical and fiscal limits of conventional silicon chips. For decades, increases in
chip performance have come about largely by putting more and more transistors on a
circuit. Higher densities, however, increase the problems of heat generation and defects
and affect the basic physics of the devices.
Instead of increasing the number of transistors on a circuit, we could create a
hybrid circuit with fewer transistors but with the addition of memristors which could add
functionality. Alternately, memristor technologies could enable more energy-efficient
high-density circuits.
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9. CONCLUSION
By redesigning certain types of circuits to include memristors, it is possible to
obtain the same function with fewer components, making the circuit itself less expensive
and significantly decreasing its power consumption. In fact, it can be hoped to combine
memristors with traditional circuit-design elements to produce a device that does
computation. The Hewlett-Packard (HP) group is looking at developing a memristor-
based nonvolatile memory that could be 1000 times faster than magnetic disks and use
much less power.
As rightly said by Leon Chua and R.Stanley Williams (originators of memristor),
memrisrors are so significant that it would be mandatory to re-write the existing
electronics engineering textbooks.
However, as experience shows, the most valuable applications of memristors will
most likely come from some young student who learns about these devices and has an
inspiration for something totally new recognition. You may think this is not an electrical
topic but the linear elements are also used in every electrical circuit and my intension is
to divert the minds of young future engineers to this memristor and to make there
inventions in this topic. I am glad that I am directing all the engineers in the right way.
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RVR Institute of Engineering & Technology
10. FUTURE OF MEMRISTOR
Although memristor research is still in its infancy, HP Labs is working on a
handful of practical memristor projects. And now Williams's team has demonstrated a
working memristor-transistor hybrid chip. "Because memristors are made of the same
materials used in normal integrated circuits," says Williams, "it turns out to be very easy
to integrate them with transistors." His team, which includes HP researcher Qiangfei Xia,
built a field-programmable gate array (FPGA) using a new design that includes
memristors made of the semiconductor titanium dioxide and far fewer transistors than
normal.Engineers commonly use FPGAs to test prototype chip designs because they can
be reconfigured to perform a wide variety of different tasks. In order to be so flexible,
however, FPGAs are large and expensive. And once the design is done, engineers
generally abandon FPGAs for leaner "application-specific integrated circuits." "When
you decide what logic operation you want to do, you actually flip a bunch of switches and
configuration bits in the circuit," says Williams. In the new chip, these tasks are
performed by memristors. "What we're looking at is essentially pulling out all of the
configuration bits and all of the transistor switches," he says. According to Williams,
using memristors in FPGAs could help significantly lower costs. "If our ideas work out,
this type of FPGA will completely change the balance," he says. Ultimately, the next few
years could be very important for memristor research.
Right now, "the biggest impediment to getting memristors in the marketplace is
having [so few] people who can actually design circuits [using memristors]," Williams
says. Still, he predicts that memristors will arrive in commercial circuits within the next
three years.
Researchers say that no real barrier prevents implementing the memristor in
circuitry immediately. But it's up to the business side to push products through to
commercial reality. Memristors made to replace flash memory will likely appear first;
HP's goal is to offer them by 2012. Beyond that, memristors will likely replace both
DRAM and hard disks in the 2014-to-2016 time frame. As for memristor-based analog
computers, that step may take 20-plus years.
EEE Department 24
RVR Institute of Engineering & Technology
11. BIBLIOGRAPHY
1. Lee-Eun Yu, Sungho Kim, Min-Ki Ryu, Sung-Yool Choi and Yang-Kyu Choi, ”Structure
Effects on Resistive Switching of Al/TiOx/Al Devices for RRAM Applications”, IEEE
ELECTRON DEVICE LETTER, VOL. 29, NO. 4, APRIL 2008
2. Chih-Yang Lin, Chih-Yi Liu, Chun-Chieh Lin, T.Y, Tseng, ”Current status of resistive
nonvolatile memories/memristors”, J Electroceram, DOI 10.1007/s10832-007-9081-y, 2007.
R. Colin Johnson ,”HP reveals memristor,the forth passive circuit element”, by Informationweek
magazine on April30,2008.
3. http://www.memristor.org/
4.http://blogs.spectrum.ieee.org/tech_talk/2008/07/
memristors_coming_soon_to_a_br.html
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