measurement of depth resolved photoluminescence spectra in swift xe ions bombarded lif crystals

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Measurement of depth resolved photoluminescence spectra in swift Xe ions bombarded LiF crystals. Siyasanga Mpelane Vuyokazi Namntu Supervisor: V.A Skuratov

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Measurement of depth resolved photoluminescence spectra in swift Xe ions bombarded LiF crystals. Siyasanga Mpelane Vuyokazi Namntu Supervisor: V.A Skuratov. Outline. Introduction Experimental set-up LiF depth profile measurements Results and discussions conclusion. introduction. - PowerPoint PPT Presentation

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Page 1: Measurement of depth resolved photoluminescence spectra in swift Xe ions bombarded LiF crystals

Measurement of depth resolved photoluminescence spectra in swift Xe ions bombarded LiF crystals.

Siyasanga MpelaneVuyokazi NamntuSupervisor: V.A Skuratov

Page 2: Measurement of depth resolved photoluminescence spectra in swift Xe ions bombarded LiF crystals

Outline Introduction Experimental set-up LiF depth profile measurements Results and discussions conclusion

Page 3: Measurement of depth resolved photoluminescence spectra in swift Xe ions bombarded LiF crystals

introduction The overall intention of this practical work was to gain

experience in optical spectroscopy applications,with the central objective being to study radiation damages in LiF crystals.

Radiation damages in LiF will be studied by finding depth profiles of defects and correlated mechanical stresses in LiF crystals irradiated with Xe ions by using photoluminescence techniques.

LiF crystals are favourable for radiation damage studies because of their large bang-gap energy of 14eV and their high ionic binding energy .

Page 4: Measurement of depth resolved photoluminescence spectra in swift Xe ions bombarded LiF crystals

Experimental setup

Page 5: Measurement of depth resolved photoluminescence spectra in swift Xe ions bombarded LiF crystals

Optical scheme

12

5

4

8

6Laser

Digital camera

7

1 – Specimen2 – Piezo stage3 – Base4– Lens 5 – Irradiated area6 – Semitransparent mirror7 – Filter8 – Mirror aperture

3

Spectrometer

Page 6: Measurement of depth resolved photoluminescence spectra in swift Xe ions bombarded LiF crystals

Color centers in LiF

To monitor the lattice disoder in LiF, the luminescence of F-type centers was used.The F center consists of one anion vacancy and one electron, whereas the F2 center consists of two anion vacancies and two electrons.These color centers are defects which were produced by irradiation with Xe ions.

Page 7: Measurement of depth resolved photoluminescence spectra in swift Xe ions bombarded LiF crystals

Results of the test measurements

500 550 600 650 700 750 800 8500

10000

20000

30000

40000

50000

x=16 m

Pho

tolu

min

esce

nce

sign

al ,

a.u.

, nm

x=3 m

F+3 F2

Irradiated areaIrradiated area

Photos of LiF monocrystal, irradiated by Xe ions with the energy 1.2MeV/nucleon

PL spectra measured at 3 and 16 μm

50 100

Page 8: Measurement of depth resolved photoluminescence spectra in swift Xe ions bombarded LiF crystals

Results

Depth-resolved PL spectra measured on LiF specimens, irradiated with Xe ions with the energy of 1.2 MeV/nucleon

The observed evolution f F3+ and F2+ center luminescence in LiF is ascribed to high concentration of defects in the ion track.

In the are closer to the edge the F3+ centers are dominating and at the end of the ion range are dominating.

Calculations for elastic and non elastic energy losses

Page 9: Measurement of depth resolved photoluminescence spectra in swift Xe ions bombarded LiF crystals

conclusion

The experience in optical spectroscopy applications was gained.

The depth profiles irradiated damage of LiF was successfully studied

The F3+ and F2 centers were observed