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Absolute Maximum Ratings (T a =25 oC unless otherwise noted)

Characteristics Symbol Rating Unit

Drain-Source Voltage V DSS -30 V

Gate-Source Voltage V GSS 25 V

Continuous Drain Current (Silicon limited) I D -67 A

Pulsed Drain Current I DM -120 A

Power Dissipation (Note 1) P D 2.5 W

Single Pulse Avalanche Energy (Note 2) E AS 112.5 mJ

Junction and Storage Temperature Range T J , T stg -55~150 oC

Thermal Characteristics

Characteristics Symbol Rating Unit

Thermal Resistance, Junction-to-Ambient (Note 1) R JA 50 oC/W Thermal Resistance, Junction-to-Case R JC 2

MDU3603Single P-Channel Trench MOSFET, -30V, -67A, 9.1m

General Description

The MDU3603 uses advanced MagnaChips MOSFETTechnology to provide low on-state resistance.

This device is suited for Power Management and loadswitching applications common in Notebook Computersand Portable Battery Packs.

Features

VDS = -30V ID = -67A @V GS = -10V R DS(ON)

< 7.5m @V GS = -20V< 9.1m @V GS = -10V< 13.6m @V GS = -5V

Applications

Load Switch General purpose applications

Smart Module for Note PC Battery

D

G

S

G

S

PDFN56

S S S G G S S S

D D D D D D D D

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Ordering Information

Part Number Temp. Range Package Packing Quantity RoHS Status

MDU3603RH -55~150 oC PowerDFN56 Tape & Reel 3000 units Halogen Free

Electrical Characteristics (T a = 25 oC unless otherwise noted)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics

Drain-Source Breakdown Voltage BV DSS ID = -250A, V GS = 0V -30 - -V

Gate Threshold Voltage V GS(th) VDS = VGS , ID = -250A -1.0 -1.8 -3.0

Drain Cut-Off Current I DSS VDS = -30V, V GS = 0V - -1A

Gate Leakage Current I GSS VGS = 25V, V DS = 0V - - 0.1

Drain-Source ON Resistance R DS(ON)

VGS = -20V, I D = -12A - 6.4 7.5

mVGS = -10V, I D = -12A - 7.5 9.1

VGS = -5V, I D = -10A 10.8 13.6

Forward Transconductance g FS VDS = -5V, I D = -10A 34 - S

Dynamic Characteristics

Total Gate Charge Q g VDS = -15V, I D = -12AVGS = -10V

- 38.4 -

nCGate-Source Charge Q gs - 5.9 -

Gate-Drain Charge Q gd - 8.2 -

Input Capacitance C iss VDS = -15V, V GS = 0V,f = 1.0MHz

- 1788 -

pFReverse Transfer Capacitance C rss - 268 -

Output Capacitance C oss - 445 -

Turn-On Delay Time t d(on)

VGS = -10V ,V DS = -15V,RL = 1.25, R GEN = 3

- 15.3 -

nsTurn-On Rise Time t r - 13.0 -

Turn-Off Delay Time t d(off) - 61.6 -

Turn-Off Fall Time t f - 53.2 -

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage V SD IS = -1A, V GS = 0V - -0.71 -1.0 V

Body Diode Reverse Recovery Time t rr IF = -12A, di/dt = 100A/s

- 42.3 ns

Body Diode Reverse Recovery Charge Q rr - 40.7 - nC

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7)2. Starting T J=25 C, L=1mH, I AS = -15A V DD=-20V, V GS =-10V.

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Fig.5 Transfer Characteristics

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation withDrain Current and Gate Voltage

Fig.3 On-Resistance Variation withTemperature

Fig.4 On-Resistance Variation withGate to Source Voltage

Fig.6 Body Diode Forward VoltageVariation with Source Current andTemperature

0.0 0.5 1.0 1.5 2.0 2.50

5

10

15

20

25

30

35

40

45

50

-8.0V-6.0V

VGS=-3.0V

VGS=-2.5V

-10.0V

-5.0V-4.0V

VGS=-3.5V

- I D

[ A ]

-VDS [V]0 10 20 30 40

0

5

10

15

20

VGS= -5V

VGS= -10V

R D S ( O N )

[ m ]

-ID [A]

-50 -25 0 25 50 75 100 125 1500.6

0.8

1.0

1.2

1.4

1.6

1.8

*Note; I D=-12A

VGS =-10V

R D S ( O N ) ,

( N o r m a l

i z e d

)

D r a

i n - S o u r c e

O n - R e s

i s t a n c e

[ m ]

TJ , Junction Temperature [ ]

2 3 4 5 6 7 8 9 105

10

15

20

25

30

*Note ; I D=-12A

R D S ( O N )

[ m ]

-VGS [V]

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.00

5

10

15

20

25

30

* Note ; V DS=-5V

- I D

[ A ]

-VGS [V]0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

10 0

101

Notes : V

GS = 0V

- I S ,

R e v e r s e

D r a

i n C u r r e n

t [ A ]

-VSD, Source-Drain voltage [V]

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Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs.Ambient Temperature

Fig.11 Transient Thermal Response Curve

0 5 10 15 20 25 300.0

500.0p

1.0n

1.5n

2.0n

2.5n

3.0n

Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = Cgd

Notes ; 1. VGS = 0 V 2. f = 1 MHz

Crss

Coss

Ciss

C a p a c

i t a n c e

[ p F ]

-VDS [V]

10 -1 10 0 10 1 10 210 -2

10-1

10 0

101

102

10 3

10s1s

100 ms

DC

10 ms

Operation in This Areais Limited by R DS(on)

Single PulseR jc=2 /WTa=25

- I D

[ A ]

-VDS [V]

25 50 75 100 125 1500

10

20

30

40

50

60

70

80

90

100

- I D

[ A ]

Ta [ ]

10-4 10-3 10-2 10-1 100 101 102 103

10-2

10-1

100

101

* Notes : Duty Factor, D=t 1/t2 PEAK T J = P DM * Z JC* R JC(t) + T C RJC=2 /W

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Z J C ,

N o r m a l

i z e

d T h e r m a

l R e s p o n s e

[ t ]

t1, Rectangular Pulse Duration [s]

0 10 20 30 40 500

2

4

6

8

10

* Note :V DS = -15V ID = -12A

- V G S

[ V ]

-Qg [nC]

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Package Dimension

PowerDFN56 (5x6mm)

Dimensions are in millimeters, unless otherwise specified

DimensionMILLIMETERS

Min Max

A 0.90 1.10

b 0.33 0.51

C 0.20 0.34

D1 4.50 5.10

D2 - 4.22

E 5.90 6.30

E1 5.50 6.10

E2 - 4.30

e 1.27BSC

H 0.41 0.71

K 0.20 -

L 0.51 0.71

0 12

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DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear powergeneration, medical appliances, and devices or systems in which malfunction of any Product can reasonably beexpected to result in a personal injury. Sellers customers using or selling Sellers products for use in suchapplications do so at their own risk and agree to fully defend and indemnify Seller .

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibilityfor use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChipSemiconductor Ltd.