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Jan M. Rabaey Digital Integrated Circuits A Design Perspective

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Page 1: L1 introduction

Jan M. Rabaey

Digital Integrated CircuitsA Design Perspective

Page 2: L1 introduction

Introduction to VLSI Design © Steven P. Levitan 1998IntroductionIntroduction

Outline (approximate)

– Introduction and Motivation– The VLSI Design Process– Details of the MOS Transistor– Device Fabrication

– Design Rules

– CMOS circuits

– VLSI Structures– System Timing– Real Circuits and Performance

Page 3: L1 introduction

The First Computer

The BabbageDifference Engine(1832)

25,000 partscost: £17,470

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

Page 4: L1 introduction

ENIAC - The first electronic computer (1946)

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

Page 5: L1 introduction

Evolution in Complexity

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

Page 6: L1 introduction

Introduction to VLSI Design © Steven P. Levitan 1998IntroductionIntroduction

What is “CMOS VLSI”?– MOS = Metal Oxide Semiconductor (This used

to mean a Metal gate over Oxide insulation)

– Now we use polycrystalline silicon which is deposited on the surface of the chip as a gate. We call this “poly” or just “red stuff” to distinguish it from the body of the chip, the substrate, which is a single crystal of silicon.

– We do use metal (aluminum) for interconnection wires on the surface of the chip.

Page 7: L1 introduction

Introduction to VLSI Design © Steven P. Levitan 1998IntroductionIntroduction

CMOS:Complementary MOS

– Means we are using both N-channel and P-channel type enhancement mode Field Effect Transistors (FETs).

– Field Effect- NO current from the controlling electrode into the output

� FET is a voltage controlled current device� BJT is a current controlled current device

– N/P Channel - doping of the substrate for increased carriers (electrons or holes)

Page 8: L1 introduction

Introduction to VLSI Design © Steven P. Levitan 1998IntroductionIntroduction

N-Channel Enhancement mode MOS FET

– Four Terminal Device - substrate bias

–The “self aligned gate” - key to CMOS

Page 9: L1 introduction

Introduction to VLSI Design © Steven P. Levitan 1998IntroductionIntroduction

VLSI:Very Large Scale Integration

� Integration: Integrated Circuits» multiple devices on one substrate

� How large is Very Large?– SSI (small scale integration)

� 7400 series, 10-100 transistors

– MSI (medium scale)� 74000 series 100-1000

– LSI 1,000-10,000 transistors– VLSI > 10,000 transistors

– ULSI/SLSI (some disagreement)

Page 10: L1 introduction

Intel 4004 Micro-Processor

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

Page 11: L1 introduction

Evolution in Transistor Count

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

Page 12: L1 introduction

Introduction to VLSI Design © Steven P. Levitan 1998IntroductionIntroduction

Scale Example

� Consider a chip size of 20mm X 20mm� Consider a transistor size of 2um X

2um» With area for wires, etc.

� 1x108 transistors / chip� Or - plot at 1 transistor : 1 mm

– 1 chip : 20 meter x 20 meter plot

Page 13: L1 introduction

Intel Pentium (II) microprocessor

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

Page 14: L1 introduction

Introduction to VLSI Design © Steven P. Levitan 1998IntroductionIntroduction

VLSI Design

– But the real issue is that VLSI is about designing systems on chips.

– The designs are complex, and we need to use structured design techniques and sophisticated design tools to manage the complexity of the design.

– We also accept the fact that any technology we learn the details of will be out of date soon.

– We are trying to develop and use techniques that will transcend the technology, but still respect it.

Page 15: L1 introduction

Introduction to VLSI Design © Steven P. Levitan 1998IntroductionIntroduction

The Process of VLSI Design:Consists of many different representations/Abstractions

of the system (chip) that is being designed.– System Level Design– Architecture / Algorithm Level Design– Digital System Level Design

– Logical Level Design

– Electrical Level Design

– Layout Level Design– Semiconductor Level Design (possibly more)

Each abstraction/view is itself a Design Hierarchy of refinements which decompose the design.

Page 16: L1 introduction

Design Abstraction Levels

n+n+S

GD

+

DEVICE

CIRCUIT

GATE

MODULE

SYSTEM

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

Page 17: L1 introduction

Introduction to VLSI Design © Steven P. Levitan 1998IntroductionIntroduction

Help from Computer Aided Design tools

� Tools» Editors» Simulators

» Libraries

» Module Synthesis

» Place/Route» Chip Assemblers» Silicon Compilers

� Experts» Logic design» Electronic/circuit

design

» Device physics

» Artwork

» Applications - system design

» Architectures

Page 18: L1 introduction

Introduction to VLSI Design © Steven P. Levitan 1998IntroductionIntroduction

New Design Methodologies

� Methodologies which are based on:» System Level Abstractions v.s. Device

Characteristic Abstractions– Logic structures and circuitry change slowly

over time� trade-offs do change, but the choices do not

» Scalable Designs– Layout techniques also change slowly.

� But the minimum feature size steadily decreases with time (also Voltage, Die Size, etc.)

Page 19: L1 introduction

Introduction to VLSI Design © Steven P. Levitan 1998IntroductionIntroduction

Design Approaches– Custom

� full control of design� best results, slowest design time.

– Semi-custom (std cell)� use Cell libraries from vendor� cad tools, faster design time

– Gate Array� fastest design time� worst speed/power/density� best low volume (worst high volume)

– EPLA/EPLD - FPGA - electrically programmable (in the field) -

Page 20: L1 introduction

Introduction to VLSI Design © Steven P. Levitan 1998IntroductionIntroduction

Close up of Intel Chip?

Time Magazine, July 1998

Page 21: L1 introduction

Evolution in Speed/Performance

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

Page 22: L1 introduction

Introduction to VLSI Design © Steven P. Levitan 1998IntroductionIntroduction

Technologies– Bipolar (BJT)

� TTL, Schottky� ECL� I^2 L

– Dual Junction, current controlled devices� MOS (FET unipolar)

» NMOS, PMOS» CMOS <== our course

– Single Junction voltage controlled devices� GaAs (typically JFET’s)� OEIC’s - MQW’s, Integrated Lasers,?

Page 23: L1 introduction

Silicon in 2010

Die Area: 2.5x2.5 cmVoltage: 0.6 VTechnology: 0.07 µm

Density Access Time(Gbits/cm2) (ns)

DRAM 8.5 10DRAM (Logic) 2.5 10SRAM (Cache) 0.3 1.5

Density Max. Ave. Power Clock Rate(Mgates/cm2) (W/cm2) (GHz)

Custom 25 54 3Std. Cell 10 27 1.5

Gate Array 5 18 1Single-Mask GA 2.5 12.5 0.7

FPGA 0.4 4.5 0.25

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

Page 24: L1 introduction

Introduction to VLSI Design © Steven P. Levitan 1998IntroductionIntroduction

SIA -National Technology Roadmap for Semiconductors

Page 25: L1 introduction

Introduction to VLSI Design © Steven P. Levitan 1998IntroductionIntroduction

SIA -National Technology Roadmap for Semiconductors

8 inch 18 inch

Page 26: L1 introduction

Introduction to VLSI Design © Steven P. Levitan 1998IntroductionIntroduction

SIA -National Technology Roadmap for Semiconductors

Page 27: L1 introduction

Introduction to VLSI Design © Steven P. Levitan 1998IntroductionIntroduction

SIA -National Technology Roadmap for Semiconductors

Page 28: L1 introduction

Introduction to VLSI Design © Steven P. Levitan 1998IntroductionIntroduction

SIA -National Technology Roadmap for Semiconductors

Page 29: L1 introduction

Introduction to VLSI Design © Steven P. Levitan 1998IntroductionIntroduction

SIA -National Technology Roadmap for Semiconductors