jan 4-8, 2008 vlsi design conference 1 total power minimization in glitch-free cmos circuits...
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Jan 4-8, 2008Jan 4-8, 2008 VLSI Design ConferenceVLSI Design Conference 11
Total Power Minimization in Glitch-Free Total Power Minimization in Glitch-Free CMOS Circuits Considering Process CMOS Circuits Considering Process
VariationVariation
Yuanlin LuYuanlin LuIntel Corporation, Folsom, CA 95630Intel Corporation, Folsom, CA 95630
Vishwani D. AgrawalVishwani D. AgrawalDepartment of ECE, Auburn University, Auburn, AL 36849Department of ECE, Auburn University, Auburn, AL 36849
22Jan 4-8, 2008Jan 4-8, 2008 VLSI Design ConferenceVLSI Design Conference
OutlineOutlineMotivationMotivationProblem StatementProblem StatementBackgroundBackgroundProposed TechniqueProposed Technique Statistical reduction of leakage and glitch Statistical reduction of leakage and glitch
power under process variationpower under process variation
ResultsResultsConclusionConclusion
33Jan 4-8, 2008Jan 4-8, 2008 VLSI Design ConferenceVLSI Design Conference
MotivationMotivation
Leakage power has become a dominant contributor to Leakage power has become a dominant contributor to the total power consumption the total power consumption
65nm, leakage is ~ 50% of total power consumption65nm, leakage is ~ 50% of total power consumption
Glitches consume 20%-70% of dynamic powerGlitches consume 20%-70% of dynamic power
Variation of process parameters increases with Variation of process parameters increases with technology scalingtechnology scaling
both average and standard deviation of leakage power increaseboth average and standard deviation of leakage power increase Glitch elimination technique of path balancing becomes Glitch elimination technique of path balancing becomes
ineffective ineffective Power yield and timing yield are degradedPower yield and timing yield are degraded
44Jan 4-8, 2008Jan 4-8, 2008 VLSI Design ConferenceVLSI Design Conference
One Example: Process Variation One Example: Process Variation Effect on Leakage and PerformanceEffect on Leakage and Performance
too slow
too leaky
[Ref] S. Borkar, et. al., DAC 2003.
0.18um CMOS process 20X leakage variation 30% frequency
variation high frequency but too
leaky chips must be discarded
low leakage chips with too low frequency must also be discarded
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Nominal
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
Pro
bab
ilit
y
10% delay variation 20% delay variation
30% delay variation
0.000.050.10
0.150.200.250.300.35
0.400.450.50
Prob
abili
ty
10% Leff variation
20% Leff variation 30% Leff variation
Comparison of Dynamic and Leakage Power Variation of Un-Optimized C432 (1,000 Samples)
Normalized Leakage Power
Normalized Dynamic Power
LLeffeff
variationvariation
(mean-(mean-nominal)/ nominal)/ nominalnominal
STD / STD / meanmean
10%10% 3.10%3.10% 6.1%6.1%
20%20% 8.75%8.75% 30.7%30.7%
30%30% 25.17%25.17% 112.9%112.9%
DelayDelayvariationvariation
(mean-(mean-nominal)/ nominal)/ nominalnominal
STD / STD / meanmean
10%10% -0.05%-0.05% 0.65%0.65%
20%20% -0.07%-0.07% 1.12%1.12%
30%30% -0.16%-0.16% 1.50%1.50%
66Jan 4-8, 2008Jan 4-8, 2008 VLSI Design ConferenceVLSI Design Conference
Process Variation and Dynamic PowerProcess Variation and Dynamic PowerDynamic power is normally much Dynamic power is normally much less sensitive to the process less sensitive to the process variation due to its approximately variation due to its approximately linear relation to process linear relation to process parameters. parameters.
Deterministic path balancing Deterministic path balancing becomes ineffective under becomes ineffective under process variation because the process variation because the perfect hazard filtering conditions perfect hazard filtering conditions can easily be corrupted with a can easily be corrupted with a very slight variation in process very slight variation in process parameters.parameters. 0.00
0.020.040.060.080.100.120.140.160.180.20
1.00
1.04
1.08
1.12
1.16
1.20
1.24
1.28
1.32
1.36
1.40
1.44
1.48
Normalized Dyanmic Power
Pro
babi
lity
10% delay variation 20% delay variation 30% delay variation
0.00
0.10
0.20
0.30
0.40
0.50
Normalized Dynamic Power
Prob
abili
ty
10% delay variation 20% delay variation 30% delay variation
C432 unoptimized for glitchesC432 unoptimized for glitches
C432 optimized by path balancingC432 optimized by path balancing
Nominal
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Previous Work and Problem StatementPrevious Work and Problem StatementPrevious Work: Mixed integer linear program (MILP) for optimum Dual-Vth and delay buffer assignment for
Minimum leakage Glitch elimination Overall delay specification Lu and Agrawal, “CMOS Leakage and Glitch Minimization
for Power-Performance Tradeoff,” JOLPE, vol. 2, no. 3, pp. 1-10, December 2006.
Lu and Agrawal, “Statistical Leakage and Timing Optimization for Submicron Process Variation,” Proc. 20th Int. Conf. VLSI Design, Jan. 2007, pp. 439-444.
Problem Statement: Minimize leakage and glitch power considering process variation.
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Techniques to Eliminate GlitchesTechniques to Eliminate Glitches
Hazard Filtering Hazard Filtering (Gate/Transistor Sizing)(Gate/Transistor Sizing)
Increase gate inertial delayIncrease gate inertial delay Sizing gate to change gate delaySizing gate to change gate delay
Path BalancingPath Balancing Decrease path delay differenceDecrease path delay difference Insert delay elements on the Insert delay elements on the
shorter delay signal pathshorter delay signal path
path delay difference < gate inertial delay path delay difference < gate inertial delay [1][1]
1
2
2→3
1
2
2
1.5
→0.5
?
[1] V. D. Agrawal, International Conference on VLSI Design, 1997
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Glitch EliminationGlitch Elimination
For every gate i:For every gate i: Without process variation: | Ti – ti | Without process variation: | Ti – ti | ≤ Di≤ Di
With process variation: Prob{ With process variation: Prob{ | Ti – ti | | Ti – ti | ≤ Di } ≥ ≤ Di } ≥ ηη
Inertial delayDi
Signal arrival time windowSignal arrival time window[ ti, Ti][ ti, Ti]
Di = Xi Di(low Vth) + (1 – Xi) Di(high Vth), Xi = [0,1]Di = Xi Di(low Vth) + (1 – Xi) Di(high Vth), Xi = [0,1]Leakage(i) = Xi Leajage(low Vth) + (1 – Xi) Leakage (high Vth)Leakage(i) = Xi Leajage(low Vth) + (1 – Xi) Leakage (high Vth)
1010Jan 4-8, 2008Jan 4-8, 2008 VLSI Design ConferenceVLSI Design Conference
A Mixed Integer Linear ProgramA Mixed Integer Linear Programfor Leakage and Glitch Power Reductionfor Leakage and Glitch Power Reduction
Objective function (linear approximation):Objective function (linear approximation):
Minimize {CMinimize {C11··Total leakageTotal leakage + C + C22··Total glitchTotal glitch
suppressing delayssuppressing delays}}
1111Jan 4-8, 2008Jan 4-8, 2008 VLSI Design ConferenceVLSI Design Conference
MILP Formulation MILP Formulation (Deterministic vs. Statistical)(Deterministic vs. Statistical)
Deterministic ApproachThe delay and subthreshold current of every gate are assumed to be fixed and without any effect of the process variation.
Basic MILP– Minimize total leakage while keeping the circuit performance unchanged.
Minimize i gate number
Subject to k PO
i
isubnomI ,
maxTTPOk
Statistical ApproachTreat delay and timing intervals as random variables with normal distributions; leakage as random variable with lognormal distribution
Basic MILP – Minimize total nominal leakage while keeping a certain timing yield (η).
Minimize i gate number
Subject to k PO
i
isubnomI ,
maxTTP POk
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Delay Distribution without Considering Delay Distribution without Considering Process VariationProcess Variation
Gate delay di
Timingwindow
Ti - ti
di >= Ti-tiglitch free
di <= Ti-tiwith glitch
di = Ti-ti
Gate delay di
Timingwindow
Ti - ti
di >= Ti-tiglitch free
di <= Ti-tiwith glitch
di = Ti-ti
Circuits unoptimized for glitchCircuits unoptimized for glitch Circuits optimized for glitch Circuits optimized for glitch by path balancingby path balancing
1313Jan 4-8, 2008Jan 4-8, 2008 VLSI Design ConferenceVLSI Design Conference
Delay Distribution under Process VariationDelay Distribution under Process Variation
Gate delay di
Timingwindow
Ti - ti
di >= Ti-tiglitch free
di <= Ti-tiwith glitch
di = Ti-ti
Gate delay di
Timingwindow
Ti - ti
di >= Ti-tiglitch free
di <= Ti-tiwith glitch
di = Ti-ti
Circuits unoptimized for glitchCircuits unoptimized for glitch Circuits optimized for glitch Circuits optimized for glitch by path balancingby path balancing
Glitch power of unoptimized circuits is not sensitive to process variation;Glitch power of unoptimized circuits is not sensitive to process variation;Glitch power of circuits optimized by path balancing is sensitive to process variation.Glitch power of circuits optimized by path balancing is sensitive to process variation.
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Technique of Enhancing the Resistance Technique of Enhancing the Resistance
of Glitch Power to Process Variationsof Glitch Power to Process Variations
Leave a relaxed margin for process variation resistance in advanceLeave a relaxed margin for process variation resistance in advance
Gate delay di
Timingwindow
Ti - ti
di >= Ti-tiglitch free
di <= Ti-tiwith glitch
di =Ti-ti
iii tTD )3()3(3iiiiii ttTTDD
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Results for C432Results for C432
0.00
0.10
0.20
0.30
0.40
0.50
0.95
0.97
0.99
1.01
1.03
1.05
1.07
1.09
1.11 1.13
1.15
1.17
1.19
1.21
1.23
Normalized Dynamic Power
Prob
abili
ty
statistical µ=1.04 3σ/µ=2.82% (µ-N)/N=3.63%
determistic µ=1.14 3σ/µ=5.13% (µ-N)/N=13.53%
0.00
0.05
0.10
0.15
0.20
0.50
0.65
0.80
0.95
1.10
1.25
1.40
1.55
1.70
1.85
2.00
2.15
2.30
2.45
2.60
2.75
2.90
Normalized Leakage
Pro
babi
lity
statistical N2=1.94 µ=2.25 σ/µ=10.24% (µ-N1)/N1=16.97%
deterministic N1=1.00 µ=1.17 σ/µ=6.64% (µ-N2)/N2=15.22%
Monte Carlo Simulation (15% local process variation)
C432 optimized by the statistical MILP with greater emphasis on glitch power to process variation (blue)
C432 optimized by the deterministic MILP (Purple)
Subthreshold LeakageSubthreshold Leakage(Spice simulation)(Spice simulation)
Dynamic PowerDynamic Power(logic simulation)(logic simulation)
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0.00
0.05
0.10
0.15
0.20
0.25
Leakage Power (uW)
Pro
babi
lity
C7552_d
C7552_p99
C7552_p95
Results of MILP:Results of MILP: Leakage Power Distribution Leakage Power Distribution of Optimized Dual-of Optimized Dual-VVthth C7552 C7552
Mean and Standard Deviation of leakage power are reduced by the statistical method.
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ConclusionConclusionCircuits optimized of glitch suppression can Circuits optimized of glitch suppression can be seriously degraded by process variation.be seriously degraded by process variation.
Overdesign (3Overdesign (3σσ variation) variation) may reduce may reduce sensitivity to process variation.sensitivity to process variation.
Statistical design (specified yields) can give Statistical design (specified yields) can give improved tradeoffs between leakage power, improved tradeoffs between leakage power, glitch power and timing.glitch power and timing.
1818Jan 4-8, 2008Jan 4-8, 2008 VLSI Design ConferenceVLSI Design Conference
Future WorkFuture Work Timing violations were found
The interdependency of delays of gates was neglected for simplicity in our MILP formulation.
If any timing violation is found, the new delays for all LVT cells are extracted from the current dual-Vth
design and the MILP formulation is updated correspondingly. A different optimal solution is then given by the CPLEX solver with fewer timing violations. We continue iterations until all timing violations are eliminated.
FF FF
2 2 3
2 3 3.2
132
8ns
LVT design
dual-Vth design
+ +
++
=
=8.2ns
7ns
gate delay
Iterative MILP Iterative MILP
for dual-Vfor dual-Vthth design design