+VS1

VIN

VOUT

VS1

+VS2

Gnd 2

VS2

Gnd 1

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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,intellectual property matters and other important disclaimers. PRODUCTION DATA.

ISO124SBOS074D SEPTEMBER 1997REVISED JULY 2016

ISO124 Precision Lowest-Cost Isolation Amplifier

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1 Features1 100% Tested for High-Voltage Breakdown Rated 1500 Vrms High IMR: 140 dB at 60 Hz 0.010% Maximum Nonlinearity Bipolar Operation: VO = 10 V DIP-16 and SO-28 Ease of Use: Fixed Unity Gain Configuration 4.5-V to 18-V Supply Range

2 Applications Industrial Process Control:

Transducer Isolator, Isolator forThermocouples, RTDs, Pressure Bridges, andFlow Meters, 4-mA to 20-mA Loop Isolation

Ground Loop Elimination Motor and SCR Control Power Monitoring PC-Based Data Acquisition Test Equipment

3 DescriptionThe ISO124 is a precision isolation amplifierincorporating a novel duty cycle modulation-demodulation technique. The signal is transmitteddigitally across a 2-pF differential capacitive barrier.With digital modulation, the barrier characteristics donot affect signal integrity, thus resulting in excellentreliability and good high-frequency transient immunityacross the barrier. Both barrier capacitors areimbedded in the plastic body of the package.

The ISO124 is easy to use. No external componentsare required for operation. The key specifications are0.010% maximum nonlinearity, 50-kHz signalbandwidth, and 200-V/C VOS drift. A power supplyrange of 4.5 V to 18 V and quiescent currents of 5mA on VS1 and 5.5 mA on VS2 make the ISO124device ideal for a wide range of applications.

The ISO124 is available in SOIC-16 and SOIC-28plastic surface-mount packages.

Device Information(1)PART NUMBER PACKAGE BODY SIZE (NOM)

ISO124SOIC (16) 17.90 mm 7.50 mmSOIC (28) 20.01 mm 6.61 mm

(1) For all available packages, see the orderable addendum atthe end of the data sheet.

4 Simplified Schematic

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Table of Contents1 Features .................................................................. 12 Applications ........................................................... 13 Description ............................................................. 14 Simplified Schematic............................................. 15 Revision History..................................................... 26 Pin Configuration and Functions ......................... 37 Specifications......................................................... 4

7.1 Absolute Maximum Ratings ...................................... 47.2 ESD Ratings.............................................................. 47.3 Recommended Operating Conditions ...................... 47.4 Thermal Information .................................................. 47.5 Electrical Characteristics........................................... 57.6 Typical Characteristics .............................................. 6

8 Detailed Description .............................................. 88.1 Overview ................................................................... 88.2 Functional Block Diagram ......................................... 8

8.3 Feature Description................................................... 98.4 Device Functional Modes.......................................... 9

9 Application and Implementation ........................ 109.1 Application Information............................................ 109.2 Typical Applications ................................................ 11

10 Power Supply Recommendations ..................... 1910.1 Signal and Supply Connections ............................ 19

11 Layout................................................................... 2011.1 Layout Guidelines ................................................. 2011.2 Layout Example .................................................... 20

12 Device and Documentation Support ................. 2112.1 Documentation Support ....................................... 2112.2 Trademarks ........................................................... 2112.3 Electrostatic Discharge Caution............................ 2112.4 Glossary ................................................................ 21

13 Mechanical, Packaging, and OrderableInformation ........................................................... 21

5 Revision History

Changes from Revision C (September 2005) to Revision D Page

Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementationsection, Power Supply Recommendations section, Layout section, Device and Documentation Support section, andMechanical, Packaging, and Orderable Information section. ................................................................................................ 1

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2

16

15

10

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7

8

+VS1

VS1

VOUT

Gnd 2

Gnd 1

VIN

VS2

+VS2

1

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16

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+VS1

VS1

VOUT

Gnd 2

Gnd 1

VIN

VS2

+VS2

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6 Pin Configuration and Functions

DVA Package16 Pins SOIC

Top View

NVF Package28 Pins SOIC

Top View

Pin FunctionsPIN

I/O DESCRIPTIONNAME SOIC SOIC

GND8 14 Low-side ground reference16 28 High-side ground reference

VIN 15 27 I High-side analog inputVOUT 7 13 O Low-side analog output+VS1 1 1 High-side positive analog supplyVS1 2 2 High-side negative analog supply+VS2 9 15 Low-side positive analog supplyVS2 10 16 Low-side negative analog supply

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(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratingsonly, which do not imply functional operation of the device at these or any other conditions beyond those indicated under RecommendedOperating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7 Specifications

7.1 Absolute Maximum Ratingsover operating free-air temperature range (unless otherwise noted) (1)

MIN MAX UNITSupply voltage 18 VVIN 100 VContinuous isolation voltage 1500 VrmsJunction temperature 125 COutput short to common ContinuousStorage temperature, Tstg 40 125 C

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD RatingsVALUE UNIT

V(ESD) Electrostatic dischargeHuman body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) 1000

VCharged-device model (CDM), per JEDEC specification JESD22-C101 (2)

500

7.3 Recommended Operating Conditionsover operating free-air temperature range (unless otherwise noted)

MIN NOM MAX UNITTA 25 85 CVS1 15 VVS2 15 VVIN 10 V

(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.

7.4 Thermal Information

THERMAL METRIC (1)ISO124

UNITDVA (SOIC) NVF (SOIC)16 PINS 28 PINS

RJA Junction-to-ambient thermal resistance 79.8 51.0 C/WRJC(top) Junction-to-case (top) thermal resistance 32.9 32.4 C/WRJB Junction-to-board thermal resistance 42.2 29.5 C/WJT Junction-to-top characterization parameter 6.6 10.4 C/WJB Junction-to-board characterization parameter 40.9 29.0 C/W

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(1) Tested at 1.6 X rated, fail on 5 pC partial discharge.(2) Nonlinearity is the peak deviation of the output voltage from the best-fit straight line. It is expressed as the ratio of deviation to FSR.(3) Ripple frequency is at carrier frequency (500 kHz).

7.5 Electrical CharacteristicsAt TA = +25C , VS1 = VS2 = 15 V, and RL = 2 k, unless otherwise noted.

PARAMETER TES