IRF3710HEXFET Power MOSFET

01/17/02

Parameter Typ. Max. UnitsRJC Junction-to-Case 0.75RCS Case-to-Sink, Flat, Greased Surface 0.50 C/WRJA Junction-to-Ambient 62

Thermal Resistance

www.irf.com 1

VDSS = 100V

RDS(on) = 23m

ID = 57AS

D

G

TO-220AB

Advanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely low on-resistanceper silicon area. This benefit, combined with the fast switching speed andruggedized device design that HEXFET power MOSFETs are well knownfor, provides the designer with an extremely efficient and reliable device foruse in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrialapplications at power dissipation levels to approximately 50 watts. The lowthermal resistance and low package cost of the TO-220 contribute to its wideacceptance throughout the industry.

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated

Description

Absolute Maximum RatingsParameter Max. Units

ID @ TC = 25C Continuous Drain Current, VGS @ 10V 57ID @ TC = 100C Continuous Drain Current, VGS @ 10V 40 AIDM Pulsed Drain Current 230PD @TC = 25C Power Dissipation 200 W

Linear Derating Factor 1.3 W/CVGS Gate-to-Source Voltage 20 VIAR Avalanche Current 28 AEAR Repetitive Avalanche Energy 20 mJdv/dt Peak Diode Recovery dv/dt 5.8 V/nsTJ Operating Junction and -55 to + 175TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )C

Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)

PD - 91309A

This datasheet has been downloaded from http://www.digchip.com at this page

IRF3710

2 www.irf.com

S

D

G

Parameter Min. Typ. Max. Units ConditionsIS Continuous Source Current MOSFET symbol

(Body Diode) showing theISM Pulsed Source Current integral reverse

(Body Diode) p-n junction diode.VSD Diode Forward Voltage 1.2 V TJ = 25C, IS = 28A, VGS = 0V trr Reverse Recovery Time 140 220 ns TJ = 25C, IF = 28AQrr Reverse Recovery Charge 670 1010 nC di/dt = 100A/s ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

57

230A

Starting TJ = 25C, L = 0.70mH RG = 25, IAS = 28A, VGS=10V (See Figure 12)

Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)

Notes: ISD 28A, di/dt 380A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175C .

Parameter Min. Typ. Max. Units ConditionsV(BR)DSS Drain-to-Source Breakdown Voltage 100 V VGS = 0V, ID = 250AV(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.13 V/C Reference to 25C, ID = 1mARDS(on) Static Drain-to-Source On-Resistance 23 m VGS = 10V, ID =28AVGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250Agfs Forward Transconductance 32 S VDS = 25V, ID = 28A

25 A VDS = 100V, VGS = 0V 250 VDS = 80V, VGS = 0V, TJ = 150C

Gate-to-Source Forward Leakage 100 VGS = 20VGate-to-Source Reverse Leakage -100 nA VGS = -20V

Qg Total Gate Charge 130 ID = 28AQgs Gate-to-Source Charge 26 nC VDS = 80VQgd Gate-to-Drain ("Miller") Charge 43 VGS = 10V, See Fig. 6 and 13td(on) Turn-On Delay Time 12 VDD = 50Vtr Rise Time 58 ID = 28Atd(off) Turn-Off Delay Time 45 RG = 2.5tf Fall Time 47 VGS = 10V, See Fig. 10

Between lead, 6mm (0.25in.)

from packageand center of die contact

Ciss Input Capacitance 3130 VGS = 0VCoss Output Capacitance 410 VDS = 25VCrss Reverse Transfer Capacitance 72 pF = 1.0MHz, See Fig. 5EAS Single Pulse Avalanche Energy 1060280 mJ IAS = 28A, L = 0.70mH

nH

Electrical Characteristics @ TJ = 25C (unless otherwise specified)

LD Internal Drain Inductance

LS Internal Source Inductance S

D

G

IGSS

ns

4.5

7.5

IDSS Drain-to-Source Leakage Current

IRF3710

www.irf.com 3

Fig 4. Normalized On-ResistanceVs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I D, D

rain

-to-S

ourc

e Cu

rrent

(A)

3.5V

20s PULSE WIDTHTj = 25C

VGSTOP 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0VBOTTOM 3.5V

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I D, D

rain

-to-S

ourc

e Cu

rrent

(A)

3.5V

20s PULSE WIDTHTj = 175C

VGSTOP 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0VBOTTOM 3.5V

3.0 4.0 5.0 6.0 7.0 8.0 9.0

VGS, Gate-to-Source Voltage (V)

0.10

1.00

10.00

100.00

1000.00

I D, D

rain

-to-S

ourc

e Cu

rrent

()

TJ = 25C

TJ = 175C

VDS = 15V20s PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160 1800.0

0.5

1.0

1.5

2.0

2.5

3.0

T , Junction Temperature ( C)

R

, D

rain

-to-S

ourc

e O

n Re

sista

nce

(Norm

alize

d)

J

DS(

on)

V =

I =

GS

D

10V

57A

IRF3710

4 www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage

Fig 7. Typical Source-Drain DiodeForward Voltage

1 10 100

VDS, Drain-to-Source Voltage (V)

10

100

1000

10000

100000

C, C

apac

itanc

e(pF)

Coss

Crss

Ciss

VGS = 0V, f = 1 MHZCiss = Cgs + Cgd, Cds SHORTEDCrss = Cgd Coss = Cds + Cgd

0 20 40 60 80 1000

2

5

7

10

12

Q , Total Gate Charge (nC)

V

, Ga

te-to

-Sou

rce

Volta

ge (V

)

G

GS

I =D 28A

V = 20VDS

V = 50VDS

V = 80VDS

0.0 0.5 1.0 1.5 2.0VSD, Source-toDrain Voltage (V)

0.10

1.00

10.00

100.00

1000.00

I SD,

R

ever

se D

rain

Cur

rent

(A)

TJ = 25C

TJ = 175C

VGS = 0V

1 10 100 1000VDS , Drain-toSource Voltage (V)

0.1

1

10

100

1000

I D, D

rain

-to-S

ourc

e Cu

rrent

(A)

Tc = 25CTj = 175CSingle Pulse

1msec

10msec

OPERATION IN THIS AREA LIMITED BY RDS(on)

100sec

IRF3710

www.irf.com 5

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.Case Temperature

VDS90%

10%VGS

td(on) tr td(off) tf

VDS

Pulse Width 1 sDuty Factor 0.1 %

RD

VGSRG

D.U.T.

VGS

+-VDD

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

25 50 75 100 125 150 1750

10

20

30

40

50

60

T , Case Temperature ( C)

I ,

Drai

n Cu

rrent

(A)

C

D

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

Notes:1. Duty factor D = t / t2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Ther

mal

Res

pons

e(Z

)

1

thJC

0.010.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE(THERMAL RESPONSE)

IRF3710

6 www.irf.com

QG

QGS QGD

VG

Charge

D.U.T. VDS

IDIG

3mA

VGS

.3F

50K

.2F12V

Current RegulatorSame Type as D.U.T.

Current Sampling Resistors

+

-

VGS

Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V(BR )D SS

IAS

Fig 12c. Maximum Avalanche EnergyVs. Drain Current

R GIA S

0.0 1tp

D .U .T

LV D S

+

-

VD D

D R IV E R

A

15V

2 0 VVGS

25 50 75 100 125 150 1750

110

220

330

440

550

Starting T , Junction Temperature ( C)

E

, Si

ngle

Pulse

Ava

lanch

e En

ergy

(mJ)

J

AS

IDTOP

BOTTOM

11A 20A 28A

IRF3710

www.irf.com 7

Peak Diode Recovery dv/dt Test Circuit

P.W. Period

di/dt

Diode Recoverydv/dt

Ripple 5%

Body Diode Forward DropRe-AppliedVoltage

ReverseRecoveryCurrent

Body Diode ForwardCurrent

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D = P.W.Period

+

-

+

+

+-

-

-

RGVDD

dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test

D.U.T*Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

* Reverse Polarity of D.U.T for P-Channel

VGS

[ ]

[ ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

[ ] ***

Fig 14. For N-channel HEXFET power MOSFETs

IRF3710

8 www.irf.com

L E A D A S S IG NM E NT S 1 - G A T E 2 - D R A IN 3 - S O U RC E 4 - D R A IN

- B -

1 .32 (.05 2)1 .22 (.04 8)

3 X 0.55 (.02 2)0.46 (.01 8)2 .92 (.11 5)2 .64 (.10 4)

4.69 ( .18 5 )4.20 ( .16 5 )

3X 0.93 (.03 7)0.69 (.02 7)

4.06 (.16 0)3.55 (.14 0)

1.15 (.04 5) M IN

6.47 (.25 5)6.10 (.24 0)

3 .7 8 (.149 )3 .5 4 (.139 )

- A -

10 .54 (.4 15)10 .29 (.4 05)2.87 (.11 3)

2.62 (.10 3)

1 5.24 (.60 0)1 4.84 (.58 4)

1 4.09 (.55 5)1 3.47 (.53 0)

3 X 1 .4 0 (.0 55 )1 .1 5 (.0 45 )

2.54 (.10 0)2 X

0 .3 6 (.01 4) M B A M

4

1 2 3

N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 2 C O N TR O L LIN G D IM E N S IO N : IN C H 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .

Part Marking InformationTO-220AB

Package OutlineTO-220ABDimensions are shown in millimeters (inches)

Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.01/02

LOT CODE 1789ASSEMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C"

INTERNATIONALRECTIFIER

LOGO

ASSEMBLYLOT CODE

PART NUMBER

DATE CODEYEAR 7 = 1997WEEK 19LINE C

EXAMPLE: THIS IS AN IRF1010