investigation on annealing effect in a suprasil sample and loss measurements in silicon samples
DESCRIPTION
Investigation on annealing effect in a Suprasil sample and loss measurements in silicon samples. Elisabetta Cesarini a,b) , Gianpietro Cagnoli a,c) , Enrico Campagna a,d) , Matteo Lorenzini a,b) , Giovanni Losurdo a) , Filippo Martelli a,d) , - PowerPoint PPT PresentationTRANSCRIPT
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Investigation on Investigation on annealing effect in a Suprasil sample and annealing effect in a Suprasil sample and
loss measurements in silicon samplesloss measurements in silicon samples
4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007
Elisabetta CesariniElisabetta Cesarini a,b), Gianpietro Cagnoli a,c), Enrico Campagna a,d), Matteo Lorenzini a,b), Giovanni Losurdo a), Filippo Martelli a,d),
Francesco Piergiovanni a,d) , Flavio Vetrano a,d)
a) INFN Sez. Firenzeb) Università di Firenze (Dip. Astronomia e Scienza dello
Spazio)c) University of Glasgowd) Università di Urbino
24° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007
Summary
Now:
We are measuring the loss angle of different interesting materials:•Herasil
•Suprasil (annealed sample, that we are investigating with surface analysis)
•Silicon (we are trying to calculate the thermoelastic contribution to fit our measurements)
Now:
We are measuring the loss angle of different interesting materials:•Herasil
•Suprasil (annealed sample, that we are investigating with surface analysis)
•Silicon (we are trying to calculate the thermoelastic contribution to fit our measurements)
Last ILIAS-GW meeting 26-27 October 2006 we presented:
Q measurement facilityInnovative nodal suspension, designed and realized (GeNS)
Last ILIAS-GW meeting 26-27 October 2006 we presented:
Q measurement facilityInnovative nodal suspension, designed and realized (GeNS)
34° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007
Dissipation measurements on Suprasil samples
4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007
-13
0
13
-13
0
13
1,72E+071,75E+07
1,71E+071,75E+07
1,79E+071,81E+071,74E+07
1,72E+071,75E+07
0,00E+00
5,00E+06
1,00E+07
1,50E+07
2,00E+07
Q v
alu
e
x [mm]
y [mm]
Q-value @3469 Hz (lower frequency)(75x3 mm Suprasil disk and D_sphere= 4.75 mm)
SAMPLE:Suprasil 311 disk 75x3 mmSapphire sphere D= 4.75 mm
SAMPLE:Suprasil 311 disk 75x3 mmSapphire sphere D= 4.75 mm
3469 Hz1° Butterfly mode
3469 Hz1° Butterfly mode
Contact surface (radius 20 Contact surface (radius 20 mmm)m)Contact surface (radius 20 Contact surface (radius 20 mmm)m)
7890 Hz2° Butterfly mode
7890 Hz2° Butterfly mode
Q-value (in milions+/-5%) @3469 Hz (lower frequency) (75x3 mm Suprasil disk and D_sphere= 4.75 mm)
18,1
17,1
17,5
17,2
17,5
17,4
17,9
17,2
17,5
-30
-20
-10
0
10
20
30
-30 -20 -10 0 10 20 30
x displacement [mm]
y d
isp
lace
men
t [
mm
]
Q-value (in milions +/- 5%) @7890 Hz (higher frequency) (75x3 mm Suprasil disk and D_sphere= 4.75 mm)
11,7
11,7
12,4
12,2
11,7
11,7
11,1 12,0
11,9
-30
-20
-10
0
10
20
30
-30 -20 -10 0 10 20 30
x displacement [mm]
y d
isp
lace
men
t [m
m]
-130
13
-13
0
13
1,17E+07
1,17E+071,22E+071,17E+07
1,17E+071,24E+07
1,11E+071,20E+07
1,19E+07
0,00E+00
2,00E+06
4,00E+06
6,00E+06
8,00E+06
1,00E+07
1,20E+07
1,40E+07
Q v
alu
e
x[mm]
y[mm]
Q-value @7889 Hz (higher frequency) (75x3 mm Suprasil disk and D_sphere= 4.75 mm)
Q does not d
epend on suspension cente
ring,
in a single su
spensio
n, in th
e region betw
een
-30μm e +
30μm with
a contact
surfa
ce of ~
20 μm
44° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007
Dissipation measurements on Suprasil samples
First measurement:Q(3469Hz)=2.7·1
06
Measurement after the annealing:
Q(3469Hz)=2·10Q(3469Hz)=2·1077
Anneal in air (suggested by
S.Penn):
-Raise the oven temperature to the annealing point (1120°C for Suprasil)
- Cool down to the strain temperature (1025°C for Suprasil) with a rate of about 10 degrees per hour
-Turn off the oven and wait for cool down in 24 hours
Anneal in air (suggested by
S.Penn):
-Raise the oven temperature to the annealing point (1120°C for Suprasil)
- Cool down to the strain temperature (1025°C for Suprasil) with a rate of about 10 degrees per hour
-Turn off the oven and wait for cool down in 24 hours
V/S = 1.3875 μm φPenn = 2 · 10-8
QPenn = 50 millions Qexp = 20 millions
V/S = 1.3875 μm φPenn = 2 · 10-8
QPenn = 50 millions Qexp = 20 millions
Taken from Mechanical Loss in Fused SilicaSteve Penn
Hobart and William Smith CollegesLSC Meeting, March 2006
LIGO DCC LIGO-G0601 40-00-Z
Taken from Mechanical Loss in Fused SilicaSteve Penn
Hobart and William Smith CollegesLSC Meeting, March 2006
LIGO DCC LIGO-G0601 40-00-Z
FI samples
Similar samples
it is smaller by a factor two!!
5Binding Energy
(eV)
cou
nts
/s
4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007
Annealing study
Is the Q value increasing due to an internal or a surface effect?Is the Q value increasing due to an internal or a surface effect?
Surface Analysis In collaboration with:
INFN sezione Genova and Università di Genova
Surface Analysis In collaboration with:
INFN sezione Genova and Università di Genova
Ellipsometry and XPSEllipsometry and XPSEllipsometry and XPSEllipsometry and XPS
… st
ill un
der i
nves
tigat
ion …
64° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007
Dissipation measurementson silicon samples
Samples:•75x1 mm•75x3 mm sapphire sphere (d=4.76 mm)•75x10 mm sapphire sphere (d=15-20 mm)
Samples:•75x1 mm•75x3 mm sapphire sphere (d=4.76 mm)•75x10 mm sapphire sphere (d=15-20 mm)
RESULT SUMMARY
Bad reproducibility of measurements
in different suspensions
Bad reproducibility of measurements
in different suspensions
CLEANING PROCEDUREWe have to work in a
clean room!!!
CLEANING PROCEDUREWe have to work in a
clean room!!!
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Taking into account only the maximum values …
4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007
Dissipation measurementson silicon samples
Q value vs frequency(75x3 mm silicon disk, sapphire sphere Rc=4.76 mm)
0,00E+00
5,00E+05
1,00E+06
1,50E+06
2,00E+06
2,50E+06
3,00E+06
3,50E+06
4,00E+06
0 5000 10000 15000 20000 25000frequency [Hz]
Max
Q-v
alue
5155 Hz 1st butterfly mode
11781 Hz 2nd butterfly mode
20353 Hz 3r butterfly mode
Q value vs frequency(75x10 mm silicon disk, sapphire sphere Rc=15 mm)
0,00E+00
2,00E+06
4,00E+06
6,00E+06
8,00E+06
1,00E+07
1,20E+07
1,40E+07
1,60E+07
1,80E+07
0 10000 20000 30000 40000 50000 60000frequency [Hz]
Max
Q-v
alue
14730 Hz 1st butterfly mode
31551 Hz 2nd butterfly mode
50906 Hz 3rd butterfly mode
WHAT IS
HAPPENIN
G?
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ADIABATIC APPROXIMATION:The T is not influenced by heat fluxesADIABATIC APPROXIMATION:The T is not influenced by heat fluxes
4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007
Thermoelastic contributioncalculation
Thermoelastic contribution for a disk of finite dimensionsThermoelastic contribution for a disk of finite dimensions
Previous calculations :- F. Bondu, P. Hello, J.Y. Vinet, Phys. Lett A 246 (1998) 227-Y.T. Liu and K.S. Thorne, Phys. Rev. D 62 (2000) 122002- V. B. Braginsky, M.L. Gorodetski, S.P. Vyatchanin, Phys Lett. A 264 (1999) 1
Previous calculations :- F. Bondu, P. Hello, J.Y. Vinet, Phys. Lett A 246 (1998) 227-Y.T. Liu and K.S. Thorne, Phys. Rev. D 62 (2000) 122002- V. B. Braginsky, M.L. Gorodetski, S.P. Vyatchanin, Phys Lett. A 264 (1999) 1
What is our idea?What is our idea?
How to solve the problem of the sources in a non-adiabatic
condition for a cristalline material?
How to solve the problem of the sources in a non-adiabatic
condition for a cristalline material?
We want to calculate exactly the thermoelastic contribution without any approximation
We want to calculate exactly the thermoelastic contribution without any approximation
We want to simulate the vibrations of the disk with ANSYSANSYS, then take
the time derivative of the deformations and put them in the diffusion heat equation.
We want to simulate the vibrations of the disk with ANSYSANSYS, then take
the time derivative of the deformations and put them in the diffusion heat equation.
… work in
progress …
94° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007
Next work…
1. New surface analysis after the annealing, trying to understand if the produced effect is internal or superficial.
2. Calculation of the thermoelastic contribution in silicon disks, without any approximation.
3. New loss measurements of the silicon samples with different thickness (in collaboration with Jena University).
4. Measurements of mechanical properties of coated samples suitably altered or damaged.
1. New surface analysis after the annealing, trying to understand if the produced effect is internal or superficial.
2. Calculation of the thermoelastic contribution in silicon disks, without any approximation.
3. New loss measurements of the silicon samples with different thickness (in collaboration with Jena University).
4. Measurements of mechanical properties of coated samples suitably altered or damaged.
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Thanks for your attentionThanks for your attention