IDW '04Proceedings

of

The 11th International Display Workshops

Workshops on• LC Science and Technologies• Active Matrix Displays• FPD Manufacturing, Materials and

Components•CRTs

• Plasma Displays• EL Displays, LEDs and Phosphors• Field Emission Display• Organic LED Displays• 3D/Hyper-Realistic Displays

and Systems• Applied Vision and Human Factors• Projection and Large-Area Displays,

and Their Components

Topical Session on• Electronic Paper

TECHNISCHE

INFORMATIONSBIBLIOTHEK

UNIVERSITATSBIBLIOTHEKHANNOVER

ITE

Sponsored byThe Institute of Image Information and Television Engineers

Kikai-Shinko-Kaikan, 3-5-8 Shiba-Koen, Minato-ku, Tokyo 105-0011, Japan

The Society for Information Display

61 OS. 2nd Street, San Jose, CA 95112, USA

SIDSOCIETY FW IHfOHMAHOHDISPlAV

TIB/UB Hannover

127 714 014..

IDW'04

TABLE OF CONTENTS

IDW '04

Wednesday, December 89:00-9:10 Snow Hall

Opening

Master of Ceremony: T. Sugiura, Executive Chair

9:00

Opening RemarksT. Uchida, General Chair

Y. Shimodaira, Program Chair

9:10-10:30 Snow Hall

Keynote Addresses

Keynote Address -1

Displays: Past, Present and Future

R. W. G. Hunt

Colour Consultant, UK

Keynote Address - 2

Digital Broadcasting Technologies : TV for

the 21st Century 7K. Enami

NHK, Japan

10:40-11:50 Snow Hall

Invited Addresses

Invited Address -1

Ubiquitous Displays for UbiquitousComputing 11

H. Nakashima

Future Univ.-Hakodate, Japan

Invited Address - 2

Research and Development of E-Books

M. T. Johnson

Philips Res. Labs., The Netherlands

,15

Workshop onLC Science and Technologies

Wednesday, December 813:30-14:55 Snow Hall B

LCT1: Novel Alignment Technologies

LCT1 -1: Invited Molecular Alignment Pattern

Formation by the Microrubbing Process for

LC Optical Device Applications 21T. Nose, M. Honma

Akita Pref. Univ., Japan

LCT1 - 2: Invited Novel Alignment Technique of

Liquid Crystal Using Hydrophilic/

Hydrophobic Pattern Layer 25A. Suemasu, K. Ikegaml, N. Maji, T. Tanaka

Dai Nippon Printing, Japan

LCT1 - 3 Control of the Liquid Crystal Alignment byTwo-Directional Rubbing 29K. Kuboki, T. Miyashita, T. UchidaTohoku Univ., Japan

LCT1 - 4L System for Measuring Parameters of LiquidCrystal Cells 33S. Valyukh*'**, C. Adis", G. Franklin**,K.Skarp*-**'Dalarna Univ., Sweden

"ConoptixAB, Sweden

15:10-16:35 Snow Hall B

LCT2: LC Alignment and Anchoring

LCT2 -1: Invited Photo-Rubbing: A Method to Induce

Stable Liquid-Crystal Pretilt Angle on Photo-

Alignment Films 35

M. Kimura*'**, S. Nakata*, A. Kumano*,

H. Yokoyama**

*JSR, Japan"Nat. Inst, of Advanced Ind. Sci. &

Tech., Japan

LCT2 - 2 Dual Image Writing on the Liquid CrystalCell Using Unpolarized UV Light 39

R. Yamaguchi, T. Kawamura, S. Sato

Akita Univ., Japan

LCT2 - 3 Highly-Reliable Method of Measuring the

Elastic Constants Ratio and Anchoring

Energy Using LC Cells with Different Gaps43

W. Kaneko, T. Ishinabe, T. Oono, T. Miyashita,T. Uchida

J. Watanabe*, H. Mori*Tohoku Univ., Japan

*Fuji Photo Film, Japan

IDW '04 V

TABLE OF CONTENTS

LCT2 - 4 Slow Orientational Dynamics and MemoryEffects in Nematic Layers at a Weak Surface

Anchoring 47S. V. Pasechnik, V. G. Chigrinov*,D. V. Shmeliova,V. A. Tsvetkov

Moscow State Ac. oflnstr. Eng. &

Computer Sci., Russia

*Hong Kong Univ. of Sci. & Tech., Hong Kong

16:45-18:10 Snow Hall B

LCT3: LC Materials and Evaluation

LCT4 - 4 3-Color Filter Substrate with Multi Thickness

Technology Used in Transflective TypeLiquid Crystal Display 79O. Mikami*, X. Gu, X. Y. Gong, C. Schmidgall,N. Bergeron,H. Hermens, W. K. Mok

Philips Mobile Display Syss., China*Mitsumura Printing, Japan

10:40-12:10 Snow Hall B

LCT5: Novel LC Modes

,51

LCT3 -1: Invited Recent Liquid Crystal Material

Development for TV ApplicationK. Tarumi, M. Klasen-Memmer

Merck, Germany

LCT3 - 2 A New Design for Transmlsslve Color NB-

STN-LCDs by Using Twisted-NematicCompensators 55A. Mutou, T. Ogasawara, T Uesaka,Y. Kumagai*,S. Nishlmura, T. ToyookaNippon Oil, Japan'Nippon Oil LC Film, Japan

LCT3 - 3 Universal Design Parameter Tz to Determinethe Viewing Angle Property of BiaxialRetardation Films 59

T. Higano, T. Ishinabe, T. Uchida

Tohoku Univ., Japan

LCT3 - 4 A High-Speed Cell Parameter Measurementof Reflective Liquid Crystal Panels by Usinga Polarization Converting Device 63M. Kawamura, S. SatoAkita Univ., Japan

Thursday, December 99:00-10:25 Snow Hall B

LCT4: Transflective LCDs

,83

LCT4-1: Invited Technologies towards PatternedOptical Foils Applied in Transflective LCDs

,67

LCT4 - 2

B. M. I. van derZande, C. Doornkamp,S. J. Roosendaal J. Steenbakkers,A. Op t Hoog, J. T. M. Osenga,J. J. van Glabbeek, L. Stofmeel, J. Lub,Y. Iefujl*, L Weegels*Philips Res., The Netherlands'Philips Mobile Display Syss., Japan

Low Interference In-Cell Diffuse Reflectorsfor Transflective Liquid Crystal Displays

.71

LCT4 - 3

N. Sumi, H. Nakamura, Y. Hamawakl,Y. letup, L M. WeegelsPhilips Mobile Display Syss., Japan

Double-Faced TFT-LCD Having One LCPanel and One Lighting System 75T. Taguchi, K. Nakamura, K. Tsuda, Y. Itoh,N. Kimura

Sharp, Japan

LCT5 -1 Electro-Optical Properties of the HybridColor Reflective VA-LCDY. Asao, R. Isobe

Canon, Japan

LCT5 - 2 Low Power LC Shutter with High ContrastRatio and Fast Response Time 87S. A. Studentsov, V, A. Brezhnev, B. I. GorflnkelN. D. Zhukov, V. G. Chigrinov*, H. S. Kwok*R&D Inst. "VOLGA", Russia

*Hong Kong Univ. ofSci. & Tech., Hong Kong

LCT5 - 3 Bendy Field-Sequential-Color DisplaysUsing A4-Slzed Ferroelectric Liquid CrystalDriven by Active Matrix Method 91H. Fupkake, H. Sato, T. Murashige, Y. Fupsaki,H. Kikuchi, T. KuritaNHK, Japan

LCT5 - 4L TN-LCDs Doped with Pd-Ag CompositeNanoparticles Exhibiting Fast Electro-OpticResponse with a Long Term Stability:Experiments and a Theoretical Explanation

95

T. Miyama*'**, Y. Sakal*, H. Shiraki*,N. Nishida*, Y. Shlraishi*, N. Toshima*-**,S. Kobayashi*'"'Tokyo Univ. of Sci. Yamaguchl, Japan"Nano Opto Labs., Japan

LCT5 - 5L Optimized Voltage Range Selection for OCB-Mode LCD In Field Sequential ColorApplication 97K. Sekiya, K. Wako, S. Nakano, T. Ishinabe*,T. Miyashita*, T. Uchida*

JST, Japan'Tohoku Univ., Japan

Friday, December 109:00-10:10 Room 301

VHF5/LCT6: Pixel Arrangement and Image Quality

VHF5/LCT6-1: Invited PenTile LCDs 1559C. Elliott

Clairvoyante, USA

No manuscript was submitted.

VHF5/LCT6 - 2 Color Image Improvement in Display with ANovel String Pixel Architecture 1563C.-S. Chang, C.-J. Chen, J.-P. PangInnoLux Display, Taiwan

VHF5/LCT6 - 3 Optical and Electrical Characterization ofFlickering of Color STN-LCD 1567R. Chen, X. Zhang, WKMok, P. Machiels*Philips Mobile Display Syss., China'Philips Mobile Display Syss., The Netherlands

TABLE OF CONTENTS

10:30-12:00 Room 301

VHF6/LCT7: Moving Image Quality

VHF6/LCT7-1: Invited A Review of MPRT MeasurementMethod for Evaluating Motion Blur of LCDs

1571

J. Someya, Y. Igarashi*Mitsubishi Elec, Japan'Hitachi Displays, Japan

VHF6/LCT7- 2 Dynamic Gamma: A Metric for the TemporalResponse Contribution to Motion Blur

1575H. Pan, X. Feng, S. DalySharp Labs, ofAmerica, USA

VHF6/LCT7 3 Parameters of Motion Picture BlurringMeasured by Using a Pursuit Camera

1579K. Oka, K. Kitagishi, Y. EnamiOtsuka Elect, Japan

VHF6/LCT7 4 Motion Picture Quality of Colored ImageMeasured by Using a Pursuit CameraSystem 1583Y. Enami, K. Kitagishi, K. OkaOtsuka Elect, Japan

14:00-17:00 Exhibition Hall B

Poster LCTpl: LC Modes

LCTpl -1 Fabrication Process of A4-size FlexibleFerroelectric Liquid Crystal Displays

101H. Sato, H. Fujikake, T. Murashige, H. Kikuchi,T. Kurita

NHK, Japan

LCTpl - 2 Influence of Polymer Wall Formation on

Electrooptic Behaviors of Ferroelectric

Liquid Crystal 105T. Murashige, H. Fupkake, H. Sato, H. Kikuchi,T. Kurita

NHK, Japan

LCTpl - 3 Single-Crystal Morphologies of Pentacene

Organic Semiconductor Segregated in

Liquid Crystal 109

H. Fupkake, T. Suzuki', Y. Fupsaki,T. Murashige, H. Sato, H. Kikuchi, T. Kurita

NHK, Japan

'Tokyo Univ. of Sci., Japan

LCTpl - 4 White Fluorescent Display Properties in

Liquid Crystal Cells Using Dichroic Dyes113

R. Yamaguchi, K. Moriyama, S. Sato,X. Zhang*, T. Thiemann*, S. Mataka*Akita Univ., Japan'Kyushu Univ., Japan

LCTpl - 5 Multi-Dimensional Alignment for Fasttransition from Splay to Bend States in a nCell 117

C. G. Jhun, J. L Lee, S. H. Kang, S. L Lee,J. C. Kim,T.-H. Yoon, J. Y. Lee*,

Pusan Nat. Univ., Korea

'BOE-HYDIS Tech., Korea

LCTpl - 6 Design of a Wide Viewing-Angle OCB Cellwith Circular Polarizers 121

M. J. Jung, C. G. Jhun, J. C. Kim, T. H. Yoon,J. D. Noh*,D. H. Suh* J. Y. Lee*

Pusan Nat. Univ., Korea'BOE-HYDIS Tech., Korea

LCTpl - 7 Evaluation of Induced Polarization

Dependence in Photo- PolymerizationProcess of Holographic Polymer DispersedLiquid Crystal Films 125A. Ogiwara, M. Takeda, H. Matsuda",O. Tanaka*

Takamatsu Nat. College of Tech., Japan'Okura Ind., Japan

LCTpl - 8 Nematic Diffractive Grating Induced byNano-Treated Silicon Oxide Surface

129

M. I. Gritsenko, S. I. Kucheev, P. M. Litvin*

Chernigov Univ., Ukraine'Inst, of Physics, Ukraine

LCTpl - 9 Liquid Crystal Diffractive Optical DevicesFabricated by Mlcrorubbing Process

133

M. Honma, M. Takeishi, T. Nose

Akita Pref. Univ., Japan

LCTpl -10 Compensation Element of OCB LCD137

S. H. Chang, C. L Pan

Chunghwa Picture Tubes, Taiwan

LCTpl -11 Photoaligned Large Cell Gap Permanent

Grayscale in Bistable TN Liquid CrystalDisplay 141Y. W. Li, S. Y. Yeung, H. S. Kwok

Hong Kong Univ. of Sci. & Tech., Hong Kong

LCTpl -12 Multidimensional Alignment Structure for

Long-Term Memory in a Bistable Chiral-

Splay Nematic Liquid Crystal Device

145

S. H. Kang, C. G. Jhun, S. R. Lee, J. C. Kim,T.-H. Yoon

Pusan Nat. Univ., Korea

LCTpl - 13L 3-D FEM Study Analyzing the LC Cell withProtrusion 149

S.-H. Yoon, S.-l. Yoon, C.-S. Lee, H.-J. Yoon,

D.-W. Kim', M.-S. Jung', T. Won*

Sanayi Sys., Korea*lnha Univ., Korea

14:00 -17:00 Exhibition Hall B

Poster LCTp2: Transflective LCDs

LCTp2 -1 Reduced Power Consumption in a Single-Polarizer Reflective TN-LCD with One

Retardation Film 151

H. Hando, T. Izoe, Y. Sakamoto, I. Fukuda

Kanazawa Inst, of Tech., Japan

LCTp2 - 2 Multimode Transflective LCD 155G.-S. Lee, J. C. Kim, T.-H. Yoon, J. S. Gwag*Pusan Nat. Univ., Korea

'BOE-HYDIS Tech., Korea

IDW '04 VII

TABLE OF CONTENTS

LCTp2 3 Vertically Aligned Transflective LiquidCrystal Display with Inner Retarders

159

S. J. Park, C. G. Jhun, K.-H. Park, J C. Kim,T.-H. Yoon

Pusan Nat. Univ., Korea

LCTp2 - 4 Configuration of a Transflective IPS LCDwith an Optical Dummy Layer 163K. H. Park, Y. J. Ko, J. C. Kim, T. H. Yoon

Pusan Nat. Univ., Korea

LCTp2 - 5 Electro-Optic Characteristics of In-PlaneDriven Transflective LCD 167

/. H. Yu, J. H. Song, Y. J. Lim, S. H. Lee,D. S. Kim*,H.-S. Soh*, W. Y. Kim*, S. D. Yeo*

Chonbuk Nat. Univ., Korea*LG. Philips LCD, Korea

14:00 -17:00 Exhibition Hall B

Poster LCTp3: LC Alignment

LCTp3 -1 Evaluation of the Surface Anchoring

Strength of the Alignment Film for HighPretilt by Means of the RenormalizedTransmission Spectroscopic Ellipsometry

,171

N. Tanaka, M. Kimura, T. Akahane

Nagaoka Univ. of Tech., Japan

LCTp3 - 2 Evaluation of Polar Anchoring Strength bySymmetric Oblique Incident Transmission

Ellipsometry 175Y. Abe, N. Tanaka, M. Kimura, T. Akahane

Nagaoka Univ. of Tech., Japan

LCTp3 - 3 Characterization of Polyimide MolecularOrientation of LC Alignment Film by GrazingIncidence X-ray Diffraction 179/. Hirosawa

Japan Synchrotron Radiation Res. Inst, Japan

LCTp3 - 4 Investigation of the Surface Alignment of

Liquid Crystal Multi-Layers Evaporated on

Photoalignment Polyimide Film 183T N. Oo, T. Iwata*, M. Kimura, T. Akahane

Nagaoka Univ. of Tech., Japan'Core Sys., Japan

LCTp3 - 5 Withdrawn

LCTp3 - 6 Novel Photo-Aligned Twisted Nematic LiquidCrystal Cell 191

D. D. Huang, V. M. Kozenkov, V. G. Chigrinov,H. S. Kwok, H. Takada; H. Takatsu*

Hong Kong Univ. of Sci. & Tech., Hong Kong'Dainippon Ink & Chems., Japan

LCTp3 - 7L Ion Beam LC Alignment for FFS-LCD withDLCandPI 195

J. G. You, S. J. Kim, J. G. Lee, H. K. Lee,D. K. Lee, J. S. Gwag, J. Y. Ahn, J. M. Jun,J. Y. Lee

BOE-HYDIS Tech., Korea

LCTp3 - 8L Generation of Pretilt Angle on Vertical

Alignment Films by Photo-AlignmentMethod 197

K. Maruyama*'"'**; T. Houryu*, Y. Ilmura*

'Tokyo Univ. ofA&T, Japan"Tech. Res. Assn. forAdvanced DisplayMaterials, Japan

"'Dainippon Ink & Chems., Japan

14:00 -17:00 Exhibition Hall B

Poster LCTp4: Analysis & Characterization

LCTp4 -1 Study on Phase Transition of the OpticallyCompensated Splay (OCS) Cell 199B. S. Jung, S. J. Kim, S. M. Oh, J. Y. Hwang*,D. S. Seo*, J. M. Rhee*, S. H. LeeChonbuk Nat. Univ., Korea

'Yonsei Univ., Korea

LCTp4 - 2 Study on Color Characteristics of the E- andO-Modes in the Fringe-Field Switching Mode

203

/. S. Song*, Y. S. Choi*,", I. S. Balk*,J. H. Song; J. M. Rhee', S. H. Lee*,Y. S. Shin", H. Y. Kim", S. Y. Kim",Y. J. Lim"

'Chonbuk Nat. Univ., Korea

"BOE-HYDIS Tech., Korea

LCTp4 - 3 Analysis of Electro-Optic Characteristics in

Fringe-Field Switching Mode 207J. B. Park, H. Y. Kim, K H. Kim, S. Y. Kim,Y. J. Lim

BOE-HYDIS, Korea

LCTp4 - 4 The Electro-Optical Characteristics of anLCD with Respect to Material Species of theBlack Matrix 211C.-S. Lee, S.-K. Yoon, S.-H. Yoon, H.-Y. Youn*,D.-W. Kim*, M.-S. Jung*, T. Won*

Sanayi Sys., Korea*lnha Univ., Korea

LCTp4 - 5 The Optical Characteristics of a New MVA-LCD Using Computer Simulation 215

D.-W. Kim, M.-S. Jung, H.-J. Yoon, C.-S. Lee*,S.-l. Yoon*, S.-H. Yoon*, T. Won

Inha Univ., Korea

'Sanayi Sys., Korea

LCTp4 - 6 Transient Behaviors of Polymer StabilizedTwisted Nematic Liquid Crystal Cells

219

M. Kamio, M. Nanaumi, T. Takahashi, S. SaitoKogakuin Univ., Japan

LCTp4 - 7 Experimental and Theoretical Studies ofTransient Current of Nematic Liquid Crystalswith Negative Dielectric Anlsotropy Excitedby Step Voltage Application 223Y. Iwata, H. Naito, M. Inoue*, H. Ichinose",M. Klasen-Memmer"*, K. Taruml*"Osaka Pref. Univ., Japan*Toyo, Japan"Merck, Japan'"Merck, Germany

VIII IDW'04

TABLE OF CONTENTS

LCTp4 - 8 Effect of Electrode Interval in the PVA Mode227

H.-Y. Youn, D.-W. Kim, M.-S. Jung, C.-S. Lee*,S.-K. Yoon*, S.-H. Yoon*, T WonInha Univ., Korea

'Sanayi Sys., Korea

LCTp4 - 9 New Approach to LCD Modeling: 2D Version231

V. G. Chigrinov, D. A. Yakovlev*, V. I. Tsoi*Hong Kong Univ. of Sci. & Tech., Hong Kong'Saratov State Univ., Russia

LCTp4 -10 A Simple Measurement System for

Determining Cell Thickness and Twist Anglein Reflective Liquid Crystal Displays

235

M. Kawamura, M. Konda, S. SatoAkita Univ., Japan

LCTp4 -11 The Effect of Polarity of Contamination onLCD Performance 239

K.-N. Yang, L.-H. HsuAU Optronics, Taiwan

LCTp4 -12 Ring Projector from Surface StabilizedCholesteric Texture Film

C.-Y. Huang, C.-Y. HuNat. Changhua Univ. of Education, Taiwan

243

LCTp4 -13 High-Throughput Screening of the Helical

Twisting Power Property Using Micro-FTIR

Spectroscopy for Novel Chiral Materials247

J. H. Ma, Y. P. Lin, W. C. Chen, R. J. WuITRI, Taiwan

LCTp4 - 14L A Simple Twist-Angle-Measurement Methodfor a TN Cell Independent of DirectorDirection 251

T. Nishioka, T. Satake, T. Kurata, M. Okabe*.M. Kaneko*, T. Maehara*

Mitsubishi Elec, Japan'Meiryo Technica, Japan

LCTp4 - 15L Molecular Dynamics in a PAMAM Liquid

Crystalline Co-Dendrimer Investigated byNMR Relaxometry 253A. Van-Quynh', P.J. Sebastiao*-",M. Marcos'", D. Filip*-"", A.C. Ribeiro'-",J.L Serrano'", C. Cruz''", J.-M. Rueff"'

*Univ. de Lisboa, Portugal"IST-UTL, Ponugai'"Univ. Zaragoza-CSIC, Spain"""Petru Poni" Inst, of Macromolecular Chem.,

Romania

EP3/AMD1 2 A Fully Integrated Low-Power High-VoltageBistable Display Driver for Smartcard

Applications 1733W. Hendrix, J. Doutreloigne, A. Van CalsterGhent Univ., Belgium

EP3/AMD1 - 3 An Intelligent Driving Scheme for High-

Voitage Display Drivers 1737A. Monte, J. Doutreloigne, A. Van CalsterGhent Univ., Belgium

Thursday, December 99:00-10:25 Marine Hall

AMD2/OLED4: AM-OLED (1)

AMD2/0LED4 -1: Invited High-Performance and Low-Power

AMOLED Using White Emitter with Color-

Filter Array 259

K Mameno, R. Nishikawa, T. Omura,S. Matsumoto, S. A. Van Slyke*, A. D. Arnold*,T. K. Hatwar*. M. V. Hettel*, M. E. Miller*,M. J. Murdoch*, J. P. Spindler*Sanyo Elec, Japan'Eastman Kodak, USA

AMD2/0LED4-2 2.2-in. QVGA AMOLED with Current De-

Multiplexer TFT Circuits 263Y. Matsueda, D. Y. Shin, K. N. Kim, D. H. Ryu,B. V. Chung, H. K. Kim, H. K. Chung,O. K. Kwon*

Samsung SDI, Korea

'Hanyang Univ., Korea

AMD2/OLED4-3 Optical Cross Talk in AMOLED Displays with

Optical Feedback 267A. Giraldo, W. Oepts, M. C. J. M. Vissenberg,D. A. Fish', N. D. Young'

Philips Res. Labs., The Netherlands

'Philips Res. Labs., UK

AMD2/OLED4 -4 Comparison of Driving Methods for TFT-

OLEDs and Novel Proposal Using TimeRatio Grayscale and Current Uniformization

271

M. Kimura, Y. Hara, Y. Kubo, T. Akai, R. Saito

Ryukoku Univ., Japan

10:40-12:05 Marine Hall

AMD3/OLED5: AM-OLED (2)

Workshop on Active Matrix Displays

Wednesday, December 816:50-17:55 Room 201

EP3/AMD1: Electronic Paper (3)

EP3/AMD1 -1: Invited Driving an Active Matrix

Electrophoretic DisplayG. F. Zhou, M. T. Johnson, R. Cortie,

R. Zehner*, K. Amundson*, A. V. Henzen*

J. van de Kamer"

Philips Res., The Netherlands*E Ink, USA

"Philips Emerging Display Tech.,The Netherlands

1729

AMD3/OLED5-1: Invited Solution for Large-Area Full-Color

OLED Television - Light Emitting Polymerand a-Si TFT Technologies - 275

T. Shirasakl, T. Ozaki, T. Toyama, M. Takei,M. Kumagai, K. Sato, S. Shimoda, T. Tano,K. Yamamoto, K. Morimoto, J. Ogura,R. Hattori*

Casio Computer, Japan"Kyushu Univ., Japan

AMD3/OLED5-2 A Novel Digital-Gray-Scale Driving Method

with a Multiple Addressing Sequence forAM-OLED Displays 279A. Tagawa, T. Numao, T. Ohba

Sharp, Japan

IDW '04 IX

TABLE OF CONTENTS

AMD3/OLE05 • 3 A 2.0-in. AMOLED Panel with VoltageProgramming Pixel Circuits and PointScanning Data Driver Circuits 283N. Komiya, C. Y. Oh, K. M. Eom, Y. W. Kim,S. C. Park, S. W. Kim

Samsung SDI, Korea

AMD3/OLED5 -4 A Simple Data Driver Architecture toImprove Uniformity of Current-DrivenAMOLED 287

H. Y. Huang, W. T. Sun, C. C. Chen,J. C. Tseng, S. Hopf, C. F. Sung, C. H. Li,S. H. Li, J. C. Peng, Y. F. Wang, J. J. Lih,C. S. YangAU Optronics, Taiwan

13:45-15:00 Marine Hall

AMD4: LC-TV

AMD4-1: Invited Recent Development of High QualityLCD-TVs 291

M. Shigeta, M. Shiomi, M. Hirata, H. Fukuoka

Sharp, Japan

AMD4 - 2: Invited High Performance IPS Technologyfor LCD-TVs: AS-IPS2 295

K. Ono, I. Mori, R. Oke, Y. Tomioka', Y. SatouHitachi Displays, Japan'Hitachi, Japan

AMD4 - 3: Invited Recent Progress of LC-TVs UsingOCB Mode 299

A. Takimoto, H. Wakemoto, K. Nakao

Toshiba Matsushita Display Tech., Japan

,319

AMD5 - 5L Real Time Monitoring of Solid-LiquidInterface Motion Induced by ELA of

Amorphous-Silicon Thln-Films

Y. Takami, T. Warabisako

ALTEDEC, Japan

Friday, December 109:00-10:30 Marine Hall

AMD6: Mobile Display

,321

AMD6 -1: Invited System-On-Glass Displays forMobile ApplicationsH. Asada

NEC, Japan

AMD6 - 2: Invited Advanced Laser-CrystallizationTechnologies of Si for Next-Generation TFTs

325

M. Hiramatsu

ALTEDEC, Japan

AMD6 - 3 A 1.9-in. QVGA a-Si AMLCD with Gate Driver

Integration and High Brightness 329T. Inada, S. C. Deane*, M. Cassldy*,K. Yamashita, A. Iwatsu, S. Kawata,M. Yoshiga, M. Shibazaki, J. R. Hector*,M. Inoue

Philips Mobile Display Syss., Japan*Philips Res. Labs., UK

AMD6 - 4 Integrated Gate Driver Circuit Using a-SiTFT with Dual Pull-Down Structure 333

Y. H. Jang, S. Y. Yoon, B. Kim, M. D. Chun,H. N. Cho, N. W. Cho, C.-D. Kim, I. J. ChungLG.Philips LCD, Korea

15:20-17:00 Marine Hall

AMD5: TFT Technologies

AMD5 -1: Invited Research, Development andFabrication of Integrated Amorphous SiliconDrivers AMLCDs: A Review 303

J. Magarino, T. Kretz, H. Lebrun, N. SzydloThales Avionics LCD, France

AMD5 - 2 Kink-Current Reduced Poly-Si TFTs

Employing Asymmetic Dual-Gate Design forAMOLED Pixel Elements 307

W.-J. Nam, J. H. Kim, S.-H. Jung, H.-S. Shin,M.-K. Han

SeoulNat. Univ., Korea

AMD5 - 3 Reduction of Kink Current in Single GrainTFTs Fabricated by Micro-CzochralskiProcess 311

V. Rana, R. Ishihara, Y. Hiroshima*, S. Inoue*,T. Shimoda*, J. W. Metsalaar,C .1. M. Beenakker

Delft Univ. of Tech., The Netherlands'Seiko Epson, Japan

AMD5 - 4 Lateral Crystallization of Amorphous SiliconUsing Single Pulsed Exclmer Laser for Poly-Si TFT 315

K. B. Park', H. S. Cho*, H. Yin*, J. S. Jung',D. Y. Kim*, W. Xianyu*, J. Y. Kwon*,Y.S.Park*, T.Noguchi'-"'Samsung Advanced Inst, of Tech., Korea"Sungkyunkwan Univ., Korea

10:45-12:10 Marine HallAMD7: System on Panel

AMD7 -1: Invited Advanced TFT Technologies forSystem-on Glass 337G. Kawachi

ALTEDEC, Japan

AMD7 - 2: Invited Development of SLS-Based MobileDisplays 341C.-W. Kim, K.-C. ParkSamsung Elect, Korea

AMD7 - 3 A Vth-Self-Compensated Analog BufferUsing Low Temperature Poly-Silicon ThinFilm Transistors 345S. H. Yeh, W. T Sun, C. S. YangAU Optronics, Taiwan

AMD7 - 4L A Touch Panel Function Integrated LCD

Using LTPS Technology 349N. Tada, H. Hayashi, M. Yoshlda, M. Ishikawa,T. Nakamura, T. Motai, T. NishibeToshiba Matsushita Display Tech., Japan

12:20-13:30

Outstanding Poster Paper Awards at Exhibition Hall B

TABLE OF CONTENTS

13:40-15:15 Marine HallAMD8: Organic TFT Technologies

AMD8 -1: Invited Active-Matrix Display Driven byOrganic Thin-Film Transistors on FlexibleSubstrate 351C. C. Lee, J. C. Ho, L. Y. Huang, T. S. Hu,Y. W. Wang, C. C. Hsieh, W. K. Hwang,W. L. Lin, H. Y. Cheng, T. H. Lin,Y. K. Wang, P. S. Wu

ERSO/ITRI, Taiwan

AMDS - 2: Invited Active-Matrix OLED Panel Driven byOrganic TFTs 355Y. Inoue, Y. Fupsaki, T. Suzuki, S. Tokito,T. Kurita, M. Mizukami', N. Hirohata*, T. Tada*,S. Yagyu*NHK, Japan*JVC, Japan

AMD8 - 3: Invited Large Area, High Performance OTFTArrays 359T. W. Kelley, P. Baude, M. Haase, D. Ender,D. Muyres, S. D. Theiss, R. Boehmer, J. Tokie,G.Lee

3M, USA

AMD8 - 4 Liquid Crystal Display Cells Fabricated on aFlexible Plastic Substrate Driven by a Low

Voltage Operation Organic TFT 363V. Fupsaki, Y. Inoue, H. Sato, H. Fupkake,S. Tokito, T. Kurita

NHK, Japan

13:30 -16:30 Exhibition Hall B

Poster AM Dp: Active-Matrix Display

AMDp-1

AMDp- 2

AMDp-3

AMDp- 4

MED Sometimes Defeats GAP: A

Performance Study on Multi-Valued ImageEntropy Coding 383H. Sasaki, T. Arai, M. Hachiuma, A. Masuko,T. TaguchiToshiba, Japan

Optimization of the Driving Voltage for FastResponse of AMLCDs 387S.-l. Yoon, S.-H. Yoon*, C.-S. Lee', H.-J. Youn,D.-W. Kim, M.-S. Jung, T. WonInha Univ., Korea

'Sanayi Sys., Korea

Design and Implementation of mini-LVDSReceiver in 0.35pm CMOS Process 391J.-H. Kim, J.-C. Choi, J.-S. Lee, C.-S. Jang',J.-S. Yoo*. D.-H. Lee*, O.-K. Kwon, l.-J. Chung*Hanyang Univ., Korea

'LG.Philips LCD, Korea

Effects of Capping Si02 Layer on theLocation-Controlled Si Grain by u-Czochralski (grain filter) Process withExcimer-Laser 395

M. He, R. Ishihara, Y. Hiroshima*, S. Inoue*,T. Shimoda*, J. W. Metselaar,

C. I. M. Beenakker

Delft Univ. of Tech., The Netherlands

'Seiko Epson, Japan

15:30-17:00 Marine Hall

AMD9: Flexible Display

AMD9 -1: Invited Printing of Polymer Transistors forFlexible Active Matrix Displays 367H. Sirringhaus*'"'Plastic Logic, UK**E Ink Corp., USA

AMD9 - 2:

AMD9- 3

AMD9- 4

Invited Rollable Displays and IntegratedDrivers Based on Organic Electronics

,371

£ Van Veenendaal, L. Schrijnemakers,M. Van Mil, P. Van Lieshout, F. Touwslager,G. Gelinck, E. Huitema

Philips Res. Lab., The Netherlands

Development of a Transmissive a-Si TFT-LCD with Transparent Plastic Substrates

375

Y. Chikama, H. Nishiki, Y. Nakatani,

N. Watanabe, H. Gotoh; H. Umeda*, W. Oka*

Sharp, Japan'Sumitomo Bakelite, Japan

Fabrication of High Performance PolymerThin-Film Transistors on a Paper 379Y. H. Kim, C. J. Lee, D. G. Moon, W. K. Kim,J. I. Han

KETI, Korea

AMDp- 5

AMDp-6

AMDp - 7

AMDp-8

AMDp- 9

Low Threshold Voltage Polysilicon TFTswith Dual-Layer SiNx/Si02 Gate Dielectric

.399

P.-H. Tsai, H.-T. Chen, C.-L Chen

ERSO/ITRI, Taiwan

Numerical Analysis for Spatial Period ofPeriodic Grain Boundary in Si Thin Film

Crystallized by Linearly Polarized Nd:YAGPulse Laser with Oblique Incidence 403

H. Kaki, K. Nishioka, S. Horita

JAIST, Japan

Uniformity Improvement of Plasma SourceUsing Single-Layer Slotted Waveguide Array

407

T. Ide, A. Sasaki, K. Azuma, Y. Nakata,

T. Hirano*. M. Ando*ALTEDEC, Japan'Tokyo Inst, of Tech., Japan

Low Energy Doping and 450°C ThermalActivation Process Developments for LTPSTFT Device 411

J. G. Jung, K. M. Park, C. K. Yoo, C. Yi,C. W. Kim

Samsung Elect, Korea

Analysis of the Leakage Current in Poly-Si p-Channel TFT Due to Doping Condition

415

J. Y. Yang, Y. J. Kim, S. W. Lee, S. H. Kim,H. C. Kang,K. M. Lim, C. D. Kim, M. S. Yang, I. J. ChungLG.Philips LCD, Korea

IDW '04 XI

TABLE OF CONTENTS

AMDp -10 Highly Stable a-Si:H TFTs Prepared with

Optimum SINx Films by PECVD UsingTaguchi Method 419C.-Y. Wu, C.-H. Chen, Y.-C. Kuan, K.-S. Sun

Chunghwa Picture Tubes, Taiwan

AMDp -11 Extreme Grain Growth of Poly-Si Film byExcimer Laser Annealing for Sputtered a-SiFilm at Room Temperature 423D. Y. Kim*, J. S. Jung*, H. S. Cho*, J. Y. Kwon*.K. B. Park', H. Lim*, T. Noguchi*-"'Samsung Advanced Inst, of Tech., Korea

"Sungkyunkwan Univ., Korea

AMDp -12 Drain-Induced Barrier Lowering in

Polysilicon Thin-Film Transistors 427B. D. Choi, M. S. So, B. Song, D. C. Choi,Y. G. Mo, H. K. ChungSamsung SDI, Korea

AMDp -13 Continuous Argon Laser Crystallization of

Patterned Silicon 431

J. F. Michaud, R. Rogel, T. Mohammed-Brahim,M. Sarret, O. BonnaudUniv. de Rennes 1, France

AMDp -14 Crystallization of RF Sputter DepositedAmorphous Silicon Thin Film and TransistorCharacteristics 435

Y.-H. Kim, D.-l. Kim, C.-H. Chung, J. W. Lim,S. J. Yun, D.-W. Kim, D.-J. Park, Y.-H. Song,J. H. Lee

ETRI, Korea

AMDp -15 3.8-in. System on Panel LCD EmployingAdvanced CMOS LTPS Technology 439J. S. Yoo, K. M. Lim, K. £ Lee, S. W. Lee,J. M. Yoon, M. K. Baek, J. S. Yu, J. K. Park,J. K. Kang, C. D. Kim,I. J. ChungLG.Philips LCD, Korea

AMDp -16 Improvement of LTPS TFT Digital CircuitPerformance for System-On-PanelApplication 443J.-G. Kim, J. H. Hur*, J. Y. JeongUniv. ofSuwon, Korea

'Anyang Univ., Korea

AMDp -17 A New Offset Compensation Circuit for HighGray Scale TFT-LCD Data Driver 447J.-C. Choi, J.-S. Lee, O.-K. Kwon

Hanyang Univ., Korea

AMDp -18 The Circuit Development of Liquid CrystalDisplay Driver for New Type COG Panel

.451

K Nishi, Y. Dol, T. Ohmori, Y. DateMatsushita Elec. Ind., Japan

AMDp -19 A New All-P TFT(or All-N TFT) Robust Shift

Register 455

J.-R. Lin, C.-F. Chung, C. -C. LinERSO/ITRI, Taiwan

AMDp - 20 Fabrication of Organic TFTs with High-KGate Insulator Deposited by RF SputteringMethod 459

Y. Kouda, A. Kobayashi, Y. limura

Tokyo Univ. ofA&T, Japan

AMDp - 21 Low Temperature Processable InherentlyPhotosensitive Polyimide as a Gate Insulatorfor Organic Thin Film Transistors 463

S. M. Pyo, H. S. Son, Y. J. Lee, J. H. Lee,

K.-Y. Choi, M. H. Yi

Korea Res. Inst, of Chem. Tech., Korea

AMDp - 22 Bias-Stress Effect on the Performance of

OTFT on Plastic Substrate 467

S. H. Han, S. H. Kim, S. M. Cho*, M. H. Oh*,J. JangKyung Hee Univ., Korea*Dankook Univ., Korea

AMDp - 23 Pentacene Organic Thin-Film Transistors

with MoW and ITO Contact and SI02 GateDielectric 471

M. S. So, B. D. Choi, M. C. Suh, J. B. Koo,D. C. Choi, I. B. Song, K. Y. Lee, Y. G. Mo,H. K. Chung

Samsung SDI, Korea

AMDp - 24 Chracterization of Photosensitive PolymerInsulator Materials 475

G. H. Kim, S.-M. Yoon, I.-. Ryu, S. Y. Kang,K. S. Suh

ETRI, Korea

AMDp - 25 Effects of Inorganic Gas Barriers on the

Overlay Tolerance in TFT Fabrication onPlastic Substrates 479

D.-J. Park, J.-W. Lim, C.-H. Chung, S.-J. Yun,Y.-H. Kim, Y.-H. Song, D.-W. Kim, J. H. Lee

ETRI, Korea

AMDp - 26 Low-Damaged Dry Etching of BCB PolymerFilm for Interlayer Dielectrics of Poly-Si TFTon Plastic Substrate 483

D. W. Kim, S. J. Yun, Y.-H. Kim, C.-H. Chung,J. W. Lim, Y.-H. Song, D.-J. Park, J. H. Lee

ETRI, Korea

AMDp - 27L Improvement of Response Time and

Dynamic Contrast Ratio In 42-in. TFT-LCDPanel for HDTV 487S. H. Lee, J. H. Park, J. H. Yoon, C. G. Kim,M. H.Park S.D. Yeo

LG.Philips LCD, Korea

AMDp - 28L Trap Densities at Oxide Interface and GrainBoundaries in Poly-Si TFTs with OxygenPlasma Treatment Followed by HydrogenPlasma Treatment 489

M. Kimura, T. Yasuhara, K. Harada, R. Saito,D. Abe*, S. Inoue; T. Shimoda*Ryukoku Univ., Japan'Seiko Epson, Japan

AMDp - 29L Extraction of Trap Density at OxideInterfaces in Thin-Film Transistors byComparing Low and Hlgh-Frequency C-VCharacteristics 491

M. Kimura, D. Abe', S. Inoue*, T. Shimoda*Ryukoku Univ., Japan*Seiko Epson, Japan

TABLE OF CONTENTS

AMDp - 30L Abnormal Subthreshold Characteristics ofPoly-Si TFTs Fabricated by Two ShotSequential Lateral Solidification

493

J. C. Park, S. Y. Kwon, H. N. Lee, M.-K. Ryu,E. S. Kim, K. S. Son, J. H. Lee, J. S. Lim,J. Y. Lee

BOE-HYDIS Tech., Korea

AMDp - 31L Relationship between Defect Formation andHydrogen Concentration in Poly-Si film

495

N. Kawamoto, A. Masuda*, N. Matsuo",Y. Seri*, T. Nishimori, Y. Kitamon,H. Matsumura*, Y. Harada", H. Hamada***,T. Miyoshi

Yamaguchi Univ., Japan'JAIST, Japan"Univ. ofHyogo, Japan"'Sanyo Elec, Japan

AMDp - 32L Characteristics of TFTs Fabricated with

Tiled-Ribbon-Shaped Thin Silicon Grains497

M. Nakata, H. Okumura, H. Kanoh, H. HayamaNEC, Japan

AMDp - 33L Visualization of Single-Shot Excimer-Laser

Light-Pulse Profiles 499N. Akita, Y. Taniguchi, H. Ogawa, M. Jyumonp,T. Katou, M. Hiramatsu, M. Matsumura

ALTEDEC, Japan

AMDp - 34L Fabrication of Fine Copper Interconnectswith Selective Electroless Plating Method

.501

S. Aomori, M. Kado, H. NakamuraALTEDEC, Japan

AMDp - 35L High Throughput ELA Process with a LongProximity Stripe Phase Shift Mask 503T. Sato, K. Takeda, M. Saitou*Hitachi, Japan'Hitachi Displays, Japan

AMDp - 36L Nanocrystalline-Si Thin Film Deposited byICP-CVD for Flexible Displays 505S.-M. Han, J.-H. Park, H.-J. Lee, M.-K. Han,J.-Y. Kwon*, T. Noguchi*Seoul Nat. Univ., Korea

'Samsung Advanced Inst, ofTech., Korea

AMDp - 37L Microcrystalline Si Growth at 150°C on Zr02Gate Dielectric for Flexible Display 507

C.-W. Han*-", J.-H. Park*, S.-H. Jung*,M.-K. Han*, K.-Y. Kim", l.-J. Chung",S.-J. Yun***, J.-W. Lim"*

'Seoul Nat. Univ., Korea

"LG. Philips LCD, Korea

'"ETRI, Korea

AMDp - 38L Characterization of Micro-Structures of CWLaser Crystallized Polycrystalline SiliconFilms 509

Y. M. Ku, K. H. Kim, S. H. Kang, S. J. Park,J. Jang

Kyung Hee Univ., Korea

AMDp - 39L Selective Removal of SiOxNySemitransparent Film Over Si02 Film in theHeat Retaining Enhanced CrystallizationMethod for Fabrication of TFTs 511

W. C. Yeh, G. Z. Chen, Y. C. Liu, J. X. Lin*,C. L. Chen*, Y. C. Chen*, P. H. Tsai*Nat. Taiwan Univ. of Sci. & Tech., Taiwan

*ITRI, Taiwan

AMDp - 40L Surface-Wave Plasma CVD Process UsingSlotted Waveguide Antenna For Gate

Insulators 513

A. Sasaki, T. Ide, F. Nakano, Y. Nakazaki,G. Kawachi, K. Azuma

ALTEDEC, Japan

AMDp - 41L Excimer Laser Annealing of Low

Temperature Semitransparent SiliconOxynitride Gate Insulator 515W. C. Yeh, G. Z. Chen, H. E. Huang, S. L LeeNat. Taiwan Univ. of Sci. & Tech., Taiwan

AMDp - 42L Effect of Back Gate-Bias on the Performanceof P-Channel GGS poly-Si TFT on Foil

517

J. H. Cheon

Kyung Hee Univ., Korea

13:30-16:30 Exhibition Hall B

Poster AMD/OLEDp: Active-Matrix OLED

AMD/OLEDp -1 A Circuit for Testing TFT-Arrays of AMOLED

Displays519

D. Nakano, Y. Sakaguchi, K. Imura, A. OhtaIBMJapan, Japan

AMD/OLEDp-2 Active Organic Light Emitting Diode DriveCircuit 523

H.-R. Han*-", C.-C. Kuo*-", W.-T Liao',S.-T. Lo*, W.-C. Wang*'Wintek, Taiwan

"Nat. Chung Hsing Univ., Taiwan

AMD/OLEDp-3 A New AMOLED Pixel Driving Scheme

Employing VDD Line Elimination 527W.-J. Nam, J.-H. Lee, S.-H. Jung, C.-W. Han,M.-K. Han

Seoul Nat. Univ., Korea

AMD/OLEDp -4 A New AMOLED Pixel Design CompensatingThreshold Voltage Degradation of a-Si:H TFTand OLED 531

J. H. Kim, J.-H. Lee, W.-J. Nam, B.-H. You,M.-K. Han

Seoul Nat. Univ., Korea

AMD/OLEDp-5 Uniformity of AM-OLED Pixels Circuits

Using as-Deposited Polysilicon TFTsImproved by Slicing Effect 535A. Gaillard*'", T. Mohammed-Brahim',S. Crand*, R. Roger, C. Prat", P. Leroy"'Univ. de Rennes 1, France

"Thomson Multimedia R&D, France

AMD/OLEDp 6L A New Voltage Driven Pixel Circuit for LargeSized AMOLED Panel 539

Y. J. Park, J. Huh, B. K. Kim, M. H. Jung,O. H. Kim

Pohang Univ. of Sci. & Tech., Korea

IDW'04 XIII

TABLE OF CONTENTS

AMD/OLEDp 7L The Suppression of the Threshold VoltageShift in a-Si TFT Pixel for AMOLED by

Employing the Reverse Bias Annealing541

J H Lee, C W Han, B H You, M K Han

Seoul Nat Univ, Korea

Workshop on FPD Manufacturing,Materials and Components

Wednesday, December 813:30-14:50 Snow Hall A

FMC1: Materials (1)

FMC1 -1: Invited Non-Diffuse Cu-Alloy Thin-Film forTFT-LCDs 545

T Ueno, N Oda, J P Chu

DEPT, Japan

FMC1 - 2: Invited Individually Dispersed ITO

Nanoparticle Ink for Transparent Conductive

Film Formation 549

M Oda, H Yamaguchi, N Abe, T Atsuki,S Ukishima, H Takei, S Ishibashi,

R Kiyoshlma*, S Shiraishi*. T Hayashi'ULVAC, Japan'JEMCO, Japan

FMC1 - 3 Reduced Power Consumption of a TouchPanel Using Patterned Indium Tin OxideResistors 553

C-M Hsu, Y-Z Chang, H-M Liu, H-E Chen,W-T Wu

Southern Taiwan Univ of Tech, Taiwan

FMC1 - 4: Invited Transparent Carbon NanotubeElectrodes for LCD Color Filters 557

D Arthur, P Wallis, J Luo

Eikos, USA

15:10-16:10 Snow Hall A

FMC2: Manufacturing Technologies (1)

FMC2-1: Invited New Optical Metrology Techniquesfor Color Filter Inspection and Process

Control 561

D Grigg, R Garden, M Mino, H Lu

Zygo, USA

FMC2 - 2: Invited Optical Inspection System for theNext Generation LCD Production 565

N Kakishita

Kubotek, Japan

FMC2 - 3L Flat Panel Assembly Using Jet Dispensingfor Gasketing Applications 569T Ratledge, F Suriawdijaja, K Fukunaga

Asymtek, USA

FMC3 - 2: Invited Fabrication System of Patterned

Spacers with High Uniformity by Transfer

Method 575

H /to/7, S Yoshmari, K Hasebe

Fuji Photo Film, Japan

FMC3 - 3 New Color Filter Carried Out by a Roll-to-Roll Process 579

T Eguchi, A Sonehara, A Sugizaki, T /to*

A Kumano", T Takahashi***

Tech Res Assn for Advanced DisplayMaterials, Japan'Sumitomo Bakellte, Japan"JSR, Japan'"Dai Nippon Printing, Japan

Thursday, December 99:00-10:20 Snow Hall A

FMC4: Advanced Technologies

FMC4-1: Invited New EU Legislation (WEEE)Compliant Recovery Processes for LCDs

583

R Martin, B Simon-Hettich, W Becker

Merck, Germany

FMC4 - 2 New Simulation Methods for Optimizing theVisual Ergonomics of Displays 587J Delacour, L Fournler, E Humbert,J-P Menu*

Optis, France*IMNSSA, France

FMC4 - 3 New 3-D MEMS Approach for Precision

Manufacturing of Flat Panel Displays.591

M Nosaka, L Creagh

Spectra, USA

FMC4-4: Invited Inkjet Printed LCDs 595J Vogels*, S Klink; R Penterman*,H. de Koning*, H Huitema*, D Broer*1**

'Philips Res, The Netherlands"Tech Univ of Eindhoven, The Netherlands

10:40-12:00 Snow Hall A

FMC5: Manufacturing Technologies (2)

FMC5 -1: Invited Contactless Panel TransportationSystem 599S Yamamoto

Orbotech Japan, Japan

FMC5 - 2 The Latest PECVD Technology for Large-Size TFT-LCD 603

T Takehara, S Sun, I D KangAKT, USA

FMC5 - 3 Withdrawn

16:50-17:50 Snow Hall A

FMC3: Color Filter

FMC3 -1 High Sensitivity and High OD Value Carbon

Dispersed Black Resist for LCD Color Filter571

K Uchikawa

Tokyo Ohka Kogyo, Japan

FMC5 - 4 Wide ECR Plasma Source by ParallelIntroduction of Synchronlzed-PhaseMicrowaves for Large Area Substrates

.611K Saito, H Takagi, T Takahashi, T Nozaki,S Matsuo

NTTAfty, Japan

XIV IDW '04

TABLE OF CONTENTS

14:00-15:20 Snow Hall AFMC6: Manufacturing Technologies (3)

FMC6 -1: Invited Solid State YAG2co Laser AnnealingSystem for the Fabrication of Poly-Si TFT-FPDs 615K. Tamagawa, T. Ohnishi, T. Kikuchi,M. HayamaULVAC, Japan

FMC6 - 2 DPSS Green Laser CrystallizationTechnology Based on Double-PulsedControl 619T Kudo, K. Yamazaki, T. AkashiSumitomo Heavy Inds., Japan

FMC6 - 3 Laser CVD Repair Technology for Final YieldImprovement Method in Mass and LargeSize TFT-LCD Production Process 623K. Wakabayashi, K. Mitobe, T. TorigoeLaserfront Tech., Japan

FMC6 - 4 A Narrow Bezel LCD Panel with a ShieldingPattern Design for ODF Process 627L Jiang, H.-J. Chu, C.-K He, W.-H. Liu,S.-H. Hou

Chunghwa Picture Tubes, Taiwan

FMC8 - 2: Invited Novel Design Method UsingBirefringence Dispersion Control ofRetardation Filmsfor a High Contrast LCD inWide Viewing Angle Range

647

A. Uchiyama*'**, T. Ishinabe*, T. Miyashita*,T. Uchida', V. Ono", Y. Ikeda"

*Tohoku Univ., Japan"Teipn, Japan

FMC8 - 3 Depth-Dependent Determination ofMolecular Orientation for WV-Film 651

Y. Takahashi, H. Watanabe, T. Kato*

Fup Photo Film, Japan*Josai Univ., Japan

FMC8 - 4 A New Polarizer with Wide Viewing Angleand Low Color Shift Characteristics

Designed for In-Plane-Switching LiquidCrystal Display (IPS-LCD) 655J. S. Yu, S. V. Belyaev, M. S. Park, B. K. Jeon,D. Cho, J.-S. Park, N. V. MallmonenkoLG Chem, Korea

10:40-12:00 Snow Hall A

15:40-16:40 Snow Hall A

FMC7: Materials (2)

FMC7 -1: Invited Deposition of High CrystalllnityPolycrystalline Si and SiGe Thin Films onGlass Substrates by ReactiveThermal CVD 631

J. Hanna

Tokyo Inst, of Tech., Japan

FMC7 - 2: Invited Materials for Printed Organic ThinFilm Transistors 635

T. Kamata, T. Kodzasa, S. Uemura,M. Yoshida, S. Hoshino, K. YaseNat. Inst, ofAdvanced Ind. Sci. & Tech., Japan

FMC7 - 3 UV-Nanoimprint Lithography Using NewPhoto-Curable Materials and 3-Demensional

Patterning Method

639

N. Sakai, M. Ohtaguchi, K. Kawaguchi*,J. Taniguchi*, I. Miyamoto'Toyo Gosei, Japan'Tokyo Univ. ofSci., Japan

9:00-10:20Friday, December 10

FMC8: Optical FilmsSnow Hall A

FMC8 -1: Invited Nano Crystal-Doped Zero-Birefringence Optical Polymers for LiquidCrystal Displays 643A. Tagaya*'", H. Ohkita*'", Y. Koike*'"*Keio Univ., Japan"Japan Sci. & Tech. Agency, Japan

FMC9: Backlight Systems (1)

FMC9 -1: Invited Efficient Polarized-Light Backlights659

H. J. Cornelissen*, D. J. Broer*'",K. W. Chien'", H. J. B. Jagt',C. W.M. Bastiaansen"

'Philips Res. Labs., The Netherlands

"Eindhoven Univ. of Tech., The Netherlands*"Nat. Chiao Tung Univ., Taiwan

FMC9 - 2 Spatially Controlled Light Extraction from aPlanar Waveguide for Dynamic Backlighting

663

M. J. J. Jak*, H. de Koning*, H. J. Cornelissen*,D. J. Broer*'", S. Y. Thang***'Philips Res. Labs., The Netherlands"Eindhoven Univ. of Tech., The Netherlands'"Philips MDS, China

FMC9 - 3 Novel Beam Shaping Structure for the CCFLBased Direct Backlight System 667S. C. Chung, C. R. Ou, H. Y. Lin, B. Horng,C. C. Lin, H. H. Lo, C. X. TsengITRI/OES, Taiwan

FMC9 - 4 Application of Adaptive Dimming Techniqueto a 17-in. LCTV for Reducing BacklightPower 671

N. Takeo, S. Kuwahara, T. Shiga, S. MikoshibaUniv. of Electro-Commun., Japan

12:20-13:30

Outstanding Poster Paper Awards at Exhibition Hall B

14:00-15:20 Snow Hall A

FMC10: Backlight Systems (2)

FMC10 -1 The Latest Technologies of a CCFL for aLarge Area LCD-TV 675N. Hashimoto, K. Matsuo, H. Yamashita,K. Yamada*

Matsushita Elec. Ind., Japan'West Elec, Japan

IDW '04 XV

TABLE OF CONTENTS

FMC10-2: Withdrawn

FMC10 - 3 RGB-LED Backlighting Monitor/TV for

Reproduction of Images in Standard and

Extended Color Spaces.683

K. Kalantar, M. Okada

Nippon Leiz, Japan

FMC10 - 4 Prism-Sheetless High-Brightness Backlight

System for Mobile Phone 687

A. Funamoto, Y. Kawabata, M. Ohira,

S. AoyamaOmron, Japan

15:40-16:40 Snow Hall A

FMC11: Optical Systems

FMC11 -1: Invited Photonic Functions of Periodic

Mlcrostructures on Glass 691

J. Nishii

Nat. Inst, ofAdvanced Ind. Sci. & Tech., Japan

FMC11 - 2 Design, Fabrication and Characteristics of

Binary Gratings Consisting of Silica Glass695

T. Nakazawa, K. Oya', S. Kittaka,K. Tsunetomo, K. Kintaka", J. Nishii",K. Hirao"*

Nippon Sheet Glass, Japan'New Glass Forum, Japan"Nat. Inst, of Advanced Ind. Sci. & Tech.,

Japan'"Kyoto Univ., Japan

FMC11 - 3 Brightness Enhancement in TransflectiveAMLCDs by Using Micro-Lens Arrays

699

J. Bruin ink, D.K.G. de Boer, H. J. Cornelissen,M. Creusen*

Philips Res. Labs., The Netherlands

'Philips Mobile Display Syss., The Netherlands

FMCp - 5 New Rubbing Cloths for Reliable AlignmentProcess to Manufacture Advanced LCDs

719

T. Inoue, H. Tabira, Y. Hirota*, K. Nishiguchl*Hitachi, Japan'Hayashi Telempu, Japan

FMCp - 6 Withdrawn

FMCp - 7 The Optical Simulation Analysis and ActualMaterial Test of a High Brightness Prism

Light-Guide Plate for BacklightingTransmisslve LCDs 727

D. K. Yoon, J. M. Han, Y. S. Oh, K. W. Bae,Y. H. Kim, Y. J. Lim

BOE-HYDIS Tech., Korea

FMCp- 8

FMCp- 9

The Electric-Optical Characteristics of

Backlight Unit with LED Light Source

.731

M. S. Lee, D. S. Park, Y. S. Oh, J. M. Han,K. W. Bae, K H. Kim, Y. J. Lim

BOE-HYDIS Tech., Korea

Direct LED Backlight System Using NovelHigh-Refractive Polymer 735N. Harada, I. Suehiro, Y. Hotta

Nltto Denko, Japan

13:30-16:30 Exhibition Hall B

FMCp-10 Withdrawn

FMCp -11 Super Bright Backlighting System for Gen. 6LCD Panel Visual Inspection System

743

K. K. Lee, S. Lim*

GLDTEK, Korea

'Damkook Univ., Korea

FMCp -12 Inductively Coupled Plasma Etch Process of

Al203 Films for the Fabrication of Very Low

Temperature Poly-SI TFTs on a PlasticSubstrate 747

S. J. Yun, K.-H. Kwon*, D.-W. Kim, J. W. Lim,Y.-H. Kim, C.-H. Chung, D. J. Park, J.-H. Lee

ETRI, Korea"Hanseo Univ., Korea

Poster FMCp: FPD Manufacturing, Materials & Components

FMCp -1 P-Type SrCu202 Thin Film Prepared byReactive Thermal Co-Evaporation 703

A. Uemura, E. Noma, K. Saiki, H. Ohnishi

Ehime Univ., Japan

FMCp - 2 Transfer-Film Technology to Eliminate

Color-Mixing Problem of Inkjet TechnologyUsed in Color Filter Manufacturing 707F.-L. Hsu, Y.-C. Lo, H.-A. Li, C.-C. Chien

Chunghwa Picture Tubes, Taiwan

FMCp - 3 Research of Coating PI Alignment-Film byUsing Ink-Jet Technology 711H.-A. Li, Y.-C. Lo, K.-H. Chen, C.-C. Chien,F.-L. Hsu

Chunghwa Picture Tubes, Taiwan

FMCp - 4 Laser Absorption Spectroscopy of TernaryGas Mixture of He-Ne-Xe in External

Electrode Fluorescent Lamp (EEFL)715

J. H. Lee, P. Y. Oh, J. Y. Lee, J. W. Hong,G. S. Cho, E. H. Choi

Kwangwoon Univ., Korea

.751FMCp -13 Plasma-Resistant Glass

K. Aral, S. Hashimoto, T. Takahata

Tosoh, Japan

FMCp - 14L Investigation on High-Density Plasma Etchof the FPD Process with the ImpedanceMeter 755

T. C. Tsai, H. W. Wei, Y. H. ChenERSO/ITRI, Taiwan

FMCp - 15L Improvement of Photoresist in MVA Modefor TFT-Based 757

S. H. Yang, H. S. Koo, D. Y. GoangAllied Material Tech., Taiwan

FMCp - 16L Development of Overcoating Technology inColor Filters 759H. C. Wu, H. S. Koo, D. Y. GoangAllied Material Tech., Taiwan

FMCp - 17L Novel Technology for Fabricating New-TypeColor Filter In TFT-LCD 761

H. C. Wu, Y. C. Chen, H. S. Koo, D. Y. GoangAllied Material Tech., Taiwan

XVI IDW '04

TABLE OF CONTENTS

FMCp - 18L Inkjet Printing for Fabricating Color Filter inTFT-Based LCD 763V. 7". Liu, H. S. Koo, L T. Chou, S. J. Chang;F. M. Wu*, D. Y. GoangAllied Material Tech., Taiwan*ITRI, Taiwan

FMCp - 19L Magnification Compensating 0.4 urnExposure System for Peripheral ICs 765A. R. Nobari, F. Clube, M. Jorda, S. Mourgue,S. Inoue, C. Iriguchi, E. Grass, H. MayerHoltronic Tech., Switzerland

'Seiko-Epson, Japan"Microfab, Liechtenstein

FMCp - 20L Application of Cleanness Cooling Tower forthe Semiconductor Fab 767

H.-C. Huang, W.-Q. Peng, L.-S. Fu*

ERSO/ITRI, Taiwan

'Growing Up Eng. Consult., Taiwan

Workshop on CRTs

Thursday, December 99:00-9:05 Room 302

Opening

9:00

Opening RemarksS. Shirai, Workshop Chair

9:05-10:15 Room 302

CRT1: For the Revival of CRT

CRT1-1: Invited CRT Industry, Time to Fight Back,771

H.-Y. Chen

Chunghwa Picture Tubes, Taiwan

CRT1 - 2: Invited Recent Developments and Prospectson Glass Technology for Still BrightlyShining CRTs 775

T. SugawaraAsahi Glass, Japan

CRT1 - 3 A New Self-Converging System withCombination of Magnetic Lens and UniformHorizontal Deflection Field 779

H. Sakurai, E. TagamiMatsushita Toshiba Picture Display, Japan

10:30-12:30 Room 302

CRT2: Masks & Screens

CRT2 -1 Robust CRT Shadow Mask OptimizationUsing an Integral Meta-Modeling Approach

783

J. van derHeijden, A. Grubben, P. Martens,T. SpanjerLG.Philips Displays, The Netherlands

CRT2 - 2 Study of AK Shadow Mask with Material

Coating for Flat CPTs 787

S. M. Kim, P. S. Jeong, J. Y. Kim, N. J. Koh,S. Y. Park, J. C. Park, J. £ Choi

LG.Philips Displays, Korea

CRT2 - 3 An Improved Microphony Measurement

System for CRTs 791

J. H. Kim, K. D. Ha

Samsung SDI, Korea

CRT2 - 4 Analysis of Mis-Landing Caused byIncreased Beam Current in Color CRTs

795

K. Ohta, Y. WadaMatsushita Toshiba Picture Display, Japan

CRT2 - 5 Heat Transfer Analysis of New Coolant foran Optical Engine 799M. Liu, C.-C. Chen, l.-H. Yen, C.-L Liu,C.-N. Mo, S.-T. Yang

Chunghwa Picture Tubes, Taiwan

CRT2 - 6L Screening of Color Phosphor Powders onCRT Faceplate for Flicker-Less Images

803L. Ozawa, M. Itoh*L. L. Tech., USA

'Shinshu Univ., Japan

14:00-15:20 Room 302CRT3: Deflection Yokes

CRT3 -1 Magnetic Ring for ConvergenceImprovement in Rectangular Shaped DYs

805

/. H. T. Fierkens

LG.Philips Displays, The Netherlands

CRT3 - 2 A High-Efficiency Velocity Modulation

System for Color CRTs 809K. Taniwa, A. Sato, K. Iwasaki

Matsushita Toshiba Picture Display, Japan

CRT3 - 3 Minimization of Acoustic Noise from

Deflection Yokes 813

J. W. Nam, S. G. Hwang

Samsung SDI, Korea

CRT3 - 4 A Deflection Yoke for Projection TV withReduced Geometrical Distortion 817

T. Yoshinaga, K. IwasakiMatsushita Toshiba Picture Display, Japan

15:40-17:00 Room 302

CRT4: Cathodes & Getters

CRT4 -1: Invited Centennial of the Oxide Cathode

821D. den Engelsen, G. Gaertner*

LG.Philips Displays, The Netherlands

'Philips Res. Labs., Germany

CRT4 - 2 Lifetime Improvement of the Bimetal Oxide-

Coated Cathode 825

J.-L. Ricaud, F. Poret, J.-M. RoquaisThomson, France

CRT4 - 3: Invited The Behavior of Ba-Films in Color

CRTs 829

D. den Engelsen, B. Ferrario*

LG.Philips Displays, The Netherlands'Saes Getters, Italy

CRT4 - 4 A Study of Correlation between ResidualGas and Emission Life 833

Y. Hayashida, S. NakagawaMatsushita Toshiba Picture Display, Japan

IDW '04 XVII

TABLE OF CONTENTS

Wednesday, December 813:30 -16:30 Exhibition Hall B

Poster CRTp: CRTs

CRTp -1 A Screen-Printed Cathode with Acicular

Conductive Particles 837

T. W. Kim, J. S. Choi, S. K. Kim, T. M. Jo,

Y. J. Youn, H. C. Kim

Samsung SDI, Korea

CRTp - 2 Mathematical Approach to Emission and

Cutoff Degradation in CRTs 841

£ M. Weon

LG.Philips Displays, Korea

CRTp - 3 Reducing the Number of Focusing Grid

Pieces of Mini-Neck CRT Gun 845

C. T. Chan, W. N. Chang*, C. H. Yeh*,P. H. Chong, C. C. Chao

Chunghwa Picture Tubes, Malaysia

'Chunghwa Picture Tubes, Taiwan

CRTp - 4 Optimized Mask & Frame Structure for

Improving the Anti-Doming Performance in

CRTs 849

N. J. Koh, P. S. Jung, J. E. Choi, S. Y. Park,J. C. Park

LG.Philips Displays, Korea

CRTp - 5 Reduction of Phosphor Aging Time in

Projection CRT 853L. C. YangCPTF Optronics, China

Workshop on Plasma Displays

Wednesday, December 813:30-14:50 Marine Hall

PDP1: Discharge Mechanism

PDP1 -1: Invited In Celebration of 40 Years of PDP

History 859

L F. Weber

Consultant, USA

PDP1 - 2 Electron Density and Temperature Profilesof Striated Plasma in an AC PDP-LIke

Discharge 863

S. Hassaballa, K. Tomita, Y-J. Kim,Y. Yamagata, Kiichiro. Uchino, H. Hatanaka*,Y. M. Kim*, S. E. Lee*, S. H. Shon*, S. H. Jang*Kyushu Univ., Japan

Samsung Advanced Inst, of Tech., Korea

PDP1 - 3 Three-Dimensional Fully Kinetic Simulations

of the Discharge Pulse in an AC PDP Cell

867

V. P. Nagorny, V. N. KhudlkPlasma Dynamics, USA

PDP1 - 4 Analysis of Micro-Discharge with Long

Discharge Path in AC PDP Based on ICCDObservation 871

J. Y. Kim, H. Kim, B. S. Kim, H.-S. Tae,

J.-H. So*, S. -H. Lee, S. H. Jang*",Y. M. Kim***

Kyungpook Nat. Univ., Korea*lncheon Univ., Korea

"Inha Univ., Korea

'"Samsung Advanced Inst, of Tech., Korea

15:10-16:30 Marine Hall

PDP2: Cell Structure & Materials

PDP2 -1: Invited A 34-in. Diagonal PDP with Metal

Barrier Rib 875

B. Wang, X. Zhang, Q. Li, Y. Tang, Y. Tu,

J. Xia, Y. Zheng, Z. Fang, H. Yin, L. TongSoutheast Univ., China

PDP2 - 2 Improvement in Address Discharge

Response with Stripe Ribs and DischargeDeactivation Films 879

S. Nagano, K. Sano, K. Hirose, S. Makino

Mitsubishi Elec, Japan

PDP2 - 3 Defects in Vacuum Evaporated MgO Thin

Films Observed by Cathodoluminescence

Analysis 883

T. Hirakawa, H. Uchllke

Saga Univ., Japan

PDP2 - 4 Hybrid Protective Layer with ZnO Nanowlres

for AC PDPs 887

S. H. Yoon, Y. S. Kim

Honglk Univ., Korea

16:50-17:50 Marine Hall

PDP3: Components

PDP3 -1: Invited Recent Trends and Issues for LargeSize PDPGIass Substrates 891

H. Ishikawa, K. Maeda, Y. AsanoAsahi Glass, Japan

PDP3 - 2 Front Filter Directly Applied on Panel

Surface without Air Gap 895T. Oishi

Pioneer, Japan

PDP3 - 3 PDP Scan Driver IC with Smart Gate

Controlled IGBTs 899

H. Kobayashi, H. Sumlda, A. Fukuchi,H. Shimabukuro, Y. Shigeta, G. Tada

Fuji Elec. Device Tech., Japan

Thursday, December 910:40-12:10 Room 301

PH2/PDP4: Phosphors for PDPs

PH2/PDP4 -1: Invited Degradation Mechanism of

BaMgAI10O17:Eu2+ (BAM) Blue Phosphor for

PDPs 1077

S. Fukuta, T. Onimaru, T. Misawa, K. Saklta,S. Kasahara, K. Betsui

Fuptsu Labs., Japan

PH27PDP4 - 2 Luminescent and Aging Caracteristlcs ofTest-PDP Panel Using Gd-Codoped

CaMgSI206:Eu2+ Phosphors 1081T. Kunimoto, S. Yamaguohi*, K. Ohm!*,H. KobayashiTokushima Bunrl Univ., Japan'Tottori Univ., Japan

PH2/PDP4 - 3 Thermal Quenching of the Blue Phosphorsfor Plasma Display Panels 1085N. Tanamachi, K. Egoshl, H. Tanno, Q. Zeng,S. ZhangDaiden, Japan

XVIII IDW '04

TABLE OF CONTENTS

PH2/PDP4 - 4 A New Synthesis of Germanate Phosphor forPDP Application 1089J. H. Kim, I. K. Choi, Y. C. You, D. S. ZangSamsung SDI, Korea

9:00-10:20Friday, December 10

PDP5: Addressing

Snow Hall B

PDP5 -1: Invited Technology for the World Largest80-ln. Full-HD PDP 905

E.Heo

Samsung SDI, Korea

PDP5 - 2 New Reset While Address (RWA) DrivingScheme for Single Scan of XGA Grade ACPDP with High Xe Content 909B.-G. Cho, H.-S. Tae

Kyungpook Nat. Univ., Korea

PDP5 - 3 Bipolar Scan Driving Scheme for High-Speed Address in AC PDP 913S.-K Jang, K.-H. Park, H.-S. Tae

Kyungpook Nat. Univ., Korea

PDP5 - 4 Improvement of the Discharge Time Lag ofAddress Pulse in AC PDP with High XeContent 917

S. H. Lee, K. S. Lee, S. Y. Park, B. J. Shin,K. C. Choi

Sejong Univ., Korea

10:40-11:40 Snow Hall B

PDP6: Driving Methods

PDP6 -1: Invited Exciting Developments in Plasma

Displays 921H. Tolner

PDP Consultant, The Netherlands

PDP6 - 2 A New High Contrast and High Speed Reset

Waveform 925

D. C. Jeong, K.-W. WhangSeoul Nat. Univ., Korea

PDP7 - 3 Light and Flexible Plasma Tube Array withFilm Substrate 941

K. Shinohe, Y. Yamazaki, A. Tokai,H. Hirakawa, H. Yamada, M. Ishimoto,K. Awamoto, T Shinoda

Fuptsu Labs., Japan

14:00 -17:00 Exhibition Hall B

Poster PDPpI: Cell Design

PDPpI -1

PDPpI - 2

PDPpI - 3

PDPpI - 4

PDPpI - 5

Discharge and Luminous Characteristics ofAC PDPs with a Grooved Front Dielectric

Layer 945S. J. Yoon, I. Lee, O. D. Kim, J. H. Jeong,J. R. Lim, K. Y. Choi

LG Elect, Korea

Characteristics ofAC PDP with Box Shaped

Apertures in Transparent Dielectric Layer949

M. H. Nam, S. H.Son*, Y. M. Kim*, B. S. Kim, S.

Y. Choi

Kyungpook Nat. Univ., Korea

'Samsung Advanced Inst, of Tech., Korea

Effects of Barrier Rib Height and Electrode

Geometry on Discharge Characteristics ofAC PDPs 953

E.-Y. Jeong, J.-C. Ahn, K.-D. Kang, H.-S. Yoo,E.-G. Heo, W.-J. Yi, K.-S. Lee, J. -Y. Park,S. -B. Song, H. -Y. Lee

Samsung SDI, Korea

Effects of Priming Particles on the

Discharge Mode in AC PDP Driven by RampVoltage Waveform 957

D. K. Lee

Pusan Univ., Korea

,961

PDP6 - 3 Study on Reset Discharges in AC PDPs

.929

B. J. Shin, K. C. Choi

Sejong Univ., Korea

12:20-13:30

Outstanding Poster Paper Awards at Exhibition Hall B

14:00-15:00 Snow Hall B

PDP7: Novel PDPs

PDP7 -1: Invited A Technology Roadmap for

Developing Large Capacity Electronic

Display Fabrics 933

R. Johnson

Info. Tech., USA

PDP7 - 2 Discharge Characteristics of a New

Structure AC PDP Using Thick Film CeramicSheet Technology 937

S. Mori, S. Ajisaka, A. Oku, K. Ikesue, S. Mori,K. Tanaka, H. Asai, N. Kikuchi, S. Sakamoto

Noritake, Japan

Effect of Subpixel Aspect Ratio onLuminous Efficiency of AC PDPsH. S. Bae, T. J. Kim, K.-W. WhangSeoul Nat. Univ., Korea

14:00-17:00 Exhibition Hall B

Poster PDPp2: Discharge Mechanisms

PDPp2 -1 Temporal Image Sticking Phenomena in ACPDP with Large Sustain Gap 965J.-W. Han, B.-G. Cho, K.-H. Park, J. Y. Kim,H.-S. Tae, S.-l. Chien, B. J. Shin*

Kyungpook Nat. Univ., Korea'Sejong Univ., Korea

PDPp2 - 2 Three-Dimensional Measurement of Electron

Temperature and Plasma Density in

Coplanar AC PDP 969

M. W. Moon, W. a Park, Y. H. Seo, G. S. Cho,

E. H. Choi

Kwangwoon Univ., Korea

IDW '04 XIX

TABLE OF CONTENTS

PDPp2 - 3 Influence of Sustain Electrode Gap on 1s5Metastable Xenon Detected with Laser

Absorption Spectroscopy inAC PDP 973

P. Oh, H. Lee, H. Moon*, K. Park", J. Ahn*",

J. Hong, W. Jeon, G. Cho, E. Choi

PDP Res. Ctr. /Kwangwoon Univ., Korea*Ctr. for Info. & Telecommun. Standards,

Korea Res. Inst, of Standards & Sci., Korea

"BOE-HYDIS Tech., Korea

'"Samsung SDI, Korea

PDPp2 - 4 Improvement of Luminous Efficacy In AC

PDP with Open Dielectric Structure

.977

D.-S. Lee, J. -O. Ok, H.-J. Lee, H.-J. Lee,

D.-H. Kim, C.-H. ParkPusan Univ., Korea

PDPp2 - 5 Analysis of Discharge Phenomena in AC

PDP with Coplanar Long-Sustain Gap and

Auxiliary Electrode 981

S. D. Park, N. H. Shin, B. J. Shin, K. C. Choi

Sejong Univ., Korea

PDPp2 - 6L Discharge Initiation of Barrier Discharge in

PDP Model-Cell 985

Y. Kashiwagi, A. Yamaguchi, S. Suzuki',H. Itoh*

Klsarazu Nat. College of Tech., Japan'Chiba Inst, of Tech., Japan

14:00 -17:00 Exhibition Hall B

Poster PDPp3: Discharge Gases

PDPp3 -1 A Study of New Penning Gas for the

Improvement of Luminance and Luminous

Efficiency In AC PDP 987S.-O. Kwon, H.-J. HwangChung-Ang Univ., Korea

14:00 -17:00 Exhibition Hall B

Poster PDPp4: Driving Methods

PDPp4 -1 New Address Waveform for Improvement of

the Priming Effect and Contrast Ratio in AC

PDPs at Address Period 1003

J. S. Kim, B. K. Joung, H. J. Hwang

Chung-ang Univ., Korea

PDPp4 - 2 An Error Diffusion Technique with ReducedArtifacts for Representation of Gray LevelsIn Dark Areas on PDP 1007

Y. H. Kim, C. W. Kim

Inha Univ., Korea

PDPp4 - 3 Analysis of Driving Method for Long Gap

Discharge by Using Vth Close Curve in ACPDP 1011

M. S. Kim, W. J. Kim, K. D. Cho, K. J. Jeong,S. I. Lee, Y. C. Choi, K. R. Shim, B. H. Kim,S. H. Kang, J. H. RyuLG Elect, Korea

PDPp4 - 4 High Speed Addressing Method for AC PDPs

Using Wall Charge Acceleration Pulse1015

J.-Y. Kim, J.-Q. Bae, l.-M. Lee

Sejong Univ., Korea

PDPp4 - 5 A Novel Discharge AND-Gate PDP forRetrenchment of Circuitry CostJ. RyeomKyongju Univ., Korea

1019

14:00-17:00 Exhibition Hall B

Posfer PDPp5: MgO

PDPp3- 2 Spatiotemporal Behaviors of Excited KrAtoms in Kr-Ne Gas Mixtures AC PDP

.991

J.-S. Oh, S. Kawai, O. Sakai, H. Hatanaka*.Y.-M. Kim*, K. Tachibana

Kyoto Univ., Japan

'Samsung Advanced Inst, of Tech., Korea

PDPp3 - 3 Influence of Binary and Ternary GasMixtures of (He.Ne)-Xe on the VacuumUltraviolet Luminous Efficiency in AC PDPs

gg5

K a Jung, W. Jeon, W. B. Park, P. Y. Oh,J. H. Lee, G. S. Cho, H. S. Uhm', £ H. ChoiKwangwoon Univ., Korea

*Ajou Univ., Korea

PDPp3 - 4 Dependence of VUV Band Emission fromXe2* Dimers on Gas Pressure in Fine PitchAC PDP 999

K. Ishii, Y. Hirano, Y. Motoyama, Y. Murakami,K. Tachibana*

NHK, Japan'Kyoto Univ., Japan

PDPp5 -1 Oblique Ion-Induced Secondary ElectronEmission Coefficient and Work Function of

MgO Thin Film in AC PDPs 1023W. B. Park, H. S. Jeong, J. S. Oh*, K. B. Jung,W. Jeon, J. C. Jeong, J. E. Lim, H. J. Lee,G. S. Cho, E. H. Choi

Kwangwoon Univ., Korea

'Kyoto Univ., Japan

PDPp5 - 2 Influences of Degradation of MgO ProtectiveLayer and Phosphor on Ion-InducedSecondary Electron Emission Coefficientand Basic Discharge Characteristics in ACPDP 1027J. E. Lim, H. S. Jeong, W. B. Park, J. Y. Lim,K. B. Jung, £ H. ChoiKwangwoon Univ., Korea

PDPp5 - 3 Work Function Change on MgO ProtectiveLayer after RF Plasma Treatment Using Ar,02, and H2 Gases 1031J. C. Jung, H. S. Jeong, W. B. Park, E. H. Choi,J. Cho

Kwangwoon Univ., Korea

14:00-17:00 Exhibition Hall BPoster PDPp6: Manufacturing Processes

PDPp6 -1 PDP Margin Voltage Inspection Using ImageProcessing Method 1035W.-C. Tal, C.-J. Lin, C.-L. Liu, C.-N.. Mo,S.-T. YangChunghwa Picture Tubes, Taiwan

XX IDW '04

TABLE OF CONTENTS

PDPp6 - 2 Characteristics of PDP with ReflectionLayers of High Thermal Conductivities

1039

D. Y. Park, Y. S. Kim, S. E. Lee', Y. M. Kim*Hongik Univ., Korea'Samsung Advanced Inst, of Tech., Korea

PDPp6 - 3 Semi-Closed Discharge Cells for PDP withCapillary Molding Process 1043T. J. Chang, K. I. Kim, Y. S. Kim

Hongik Univ., Korea

PDPp6 - 4 Consideration of Compositions andProperties of Transparent Dieletrics forPDPs 1047

J. S. Park, S. M. Han, J. H. Hwang, T Y. Lim,C. Y. Kim, M. Takaki*Korea Inst, of Ceramic Eng., Korea*Halla Univ., Korea

PDPp6 - 5 Withdrawn

14:00 -17:00 Exhibition Hall B

Poster PDPp7: Discharge Simulation

PDPp7 -1 Effect of Bus Electrode Position on

Discharge and Luminous Characteristics ofAC PDPs 1055

/. Lee, S. J. Yoon, O. D. Kim, K. Y. Choi

LG Elect, Korea

PDPp7 - 2 Performances of an AC PDP Cell withCounter Sustain-Electrodes and an AuxiliaryElectrode for Versatile Driving Schemes

1059

S. Kawai, K. Tachibana, J. S. Oh, H. Asai*,N. Kikuchi*, S. Sakamoto*

Kyoto Univ., Japan'Noritake, Japan

Workshop onEL Displays, LEDs and Phosphors

Thursday, December 99:00-10:20 Room 301

PH1:ELDs

10:40-12:10 Room 301

PH2/PDP4: Phosphors for PDPs

PH2/PDP4 -1: Invited Degradation Mechanism of

BaMgAI10017:Eu2+ (BAM) Blue Phosphor forPDPs 1077

S. Fukuta, T. Onimaru, T. Misawa, K. Sakita,S. Kasahara, K. Betsui

Fujitsu Labs., Japan

PH2/PDP4 - 2 Luminescent and Aging Caracteristics ofTest-PDP Panel Using Gd-CodopedCaMgSi208:Eu2+ Phosphors 1081T. Kunimoto, S. Yamaguchi*, K. Ohmi*,H. KobayashiTokushima Bunri Univ., Japan'Tottori Univ., Japan

PH2/PDP4-3 Thermal Quenching of the Blue Phosphorsfor Plasma Display Panels 1085N. Tanamachi, K. Egoshi, H. Tanno, Q. Zeng,S. ZhangDaiden, Japan

PH2/PDP4 - 4 A New Synthesis of Germanate Phosphor forPDP Application 1089J. H. Kim, I. K. Choi, Y. C. You, D. S. ZangSamsung SDI, Korea

14:00-15:10 Room 301

PH3: ELDs

PH3 -1: Invited Large-Screen Flat-Panel DisplaysBased on TDEL Technology 1093

X. Wu

iFire Tech., Canada

PH3 - 2 Blue-Emitting Ba2SiS4:Ce Thin-FilmElectroluminescent Devices Prepared byElectron-Beam Evaporation 1097S. Usui, Y. Samura, K. Ohmi, H. Kobayashi*Tottori Univ., Japan'Tokushima Bunri Univ., Japan

PH3 - 3 New and Improved Electroluminescent Ink

Systems 1101A Buchholz, M. LewandowskiAcheson Colloids, USA

PH1 -1: Invited The Inorganic ElectroluminescentStudies in Tottori University - in Memory ofProfessor Tanaka - 1065

H. KobayashiTokushima Bunri Univ., Japan

PH1 - 2: Invited Sphere-Supported Thin-Film EL

Technology 1069A.-H. Kitai, Y. Xiang, M. Bulk, B. Cox

McMaster Univ., Canada

PH1 - 3 Defect Density Results of Successful

Scaling of TDEL Display from 17" to 34"

1073

H. Abe, I. Yoshida, H. Hamada, P. Balmforth*,M. Kutsukake"

Sanyo Elec, Japan'iFire Tech., Canada

"Dai Nippon Printing, Japan

15:30-16:20 Room 301

PH4: Phosphors for LEDs

PH4 -1: Invited a-SiAION-Based Oxynitride/NitridePhosphors: Synthesis, Properties and

Applications 1105R. J. Xie, N. Hirosaki, M. Mitomo, Y. Yamamoto,T. Suehiro, K. Sakuma*

Nat. Inst, for Materials Sci., Japan

'Fujikura, Japan

PH4 - 2 Enhancement of Absorption Around 400 nmin Bi-doped Y203:Eu Red Phosphors for UVLEDs 1109

R. S. Liu, C. C. Kang, L. S. ChiNat. Taiwan Univ., Taiwan

IDW'04 XXI

TABLE OF CONTENTS

Friday, December 1010:40-11:50 Room 302

FED2/PH5: FEDs and Phosphors for FEDs

FED2/PH5 -1: Invited Development of Field Emission

Display 1189S. /to/7

Futaba, Japan

FED2/PH5-2 Novel Display Panel Utilizing Field Effect-Ferroelectric Electron Emitters 1193

Y. Takeuchi, T. Nanataki, I. OhwadaNGKInsulators, Japan

FED2/PH5 - 3 Eu*+ Doped A2A'(B03)2 (A=Ba,Sr, A'=Mg,Ca)Phosphor Thin Films Prepared by PulsedLaser Deposition Technique 1197M. Mlzumo, T Kunimoto*, K. Ohmi,H. Kobayashi*Tottori Univ., Japan'Tokushima Bunri Univ., Japan

Wednesday, December 813:30 -16:30 Exhibition Hall B

Poster PHp: EL Displays, LEDs and phosphors

PHp -1 High Brightness Warm-White LED LampsUsing Ca-a-SiAION Phosphors 1115K Sakuma, N. Hirosaki*, N. Kimura,Y. Yamamoto*, R.-J. Xie*, T. Suehiro*,K. Omichi, M. Ohashl, D. Tanaka

Fujikura, Japan*Nat. Inst, forMaterials Sci., Japan

PHp - 2 Surface Modification and Low VoltageCathodolumlnescence of SrTI03:Pr, Al, Ga

Phosphor 1119J. H. Kang, J. Y. Kim*, D. Y. Jeon,S. A. Bukesov"

KAIST, Korea

'Samsung Advanced Inst, of Tech., Korea"Seoul Semiconductor, Korea

PHp - 3 Study on YAG:Ce and TAG:Ce Phosphorsfor the Application to White-Emitting LightSource Using Blue-Emitting LEDs 1123H. S. Jang, W. B. Im, D. C. Lee, J. H. Kang,D. Y. Jeon

KAIST, Korea

PHp - 4 Crystalline Analysis and LuminescentProperties of ZnS:Mn Phosphor Thin FilmsPrepared with Nano-Particles 1127S. Okamoto, K. Tanaka, S. Kuzue*,K. Takizawa*

NHK, Japan'Seikei Univ., Japan

PHp - 5 Photoluminescent Properties and LocalStructural Analysis of ZnS:Mn2+ NanocrystalPhosphors Modified with 2- Mercaptoethanol

1131

E Nakamura, T. Isobe, T. Nakano*,M. Ishitsuka*, M. Saito*

Keio Univ., Japan'Sumitomo Osaka Cement, Japan

PHp - 6 Thin-Film Phosphor Development UtilizingCombinatorial Deposition by r.f. Magnetron

Sputtering Using a Subdivided Powder

Target 1135T. Minami, Y. Mochizuki, T. Miyata, K. IharaKanazawa Inst, of Tech., Japan

PHp - 7 High-Luminance Red-Emitting TFEL DevicesUsing Eu-Activated (GauOa^-fSnOaJx ThinFilms Prepared by PLD 1139T. Miyata, Y. Minamino, T. MinamiKanazawa Inst, of Tech., Japan

PHp - 8 Evaluation of Rare Earth-Doped Zn-Y-0Powders Synthesized by Citric Acid GelMethod 1143

K. Takebayashl, H. Kominami, Y. Nakanishl,Y. Hatanaka*

Shizuoka Univ., Japan'Aichi Univ. of Tech., Japan

PHp - 9 Structural Properties and ConductionControl of ZnMgO Thin Film by Oxidizationof Sulfide on SI Substrates 1147

K. Ohara, T. Harakawa, T. Selno*.A. Nakamura, T. Aoki, H. Kominami,Y. Nakanishl, Y. Hatanaka"Shizuoka Univ., Japan'Japan Steel Works, Japan"Aichi Univ. of Tech., Japan

PHp -10 Luminescent Properties of Tb3+ SubstitutedYAG:Ce,Gd Phosphors 1151Y. S. Lin, R. S. Liu, B.-M. Cheng', H. Y. Su"Nat. Taiwan Univ., Taiwan

*Nat. Synchrotron Radiation Res. Ctr„ Taiwan"Llte-On Tech., Taiwan

PHp -11 Effect of X-Ray Irradiation on DopedEuropium in BaMgAI10O17 Studied by X-rayAbsorption Fine Structure 1155/. Hirosawa, T. Honma, K. Kato, N. Kijima*,Y. Shimomura**

Japan Synchrotron Radiation Res. Inst, Japan'Mitsubishi Chem., Japan"Kasei Optonix, Japan

PHp -12 Photoluminescent Characteristics of NewYttrium Aluminophosphate Phosphorsunder VUV Excitation 1159J. H. Kang, W. B. Im, D. Y. JeonKAIST, Korea

PHp -13 Blue-Emitting MAI2Si208:Eu2+(M=Ca, Ba)Phosphor for PDP Application 11630W. B. Im, J. H. Kang, D. Y. JeonKAIST, Korea

PHp - 14L Effect on Deoxldatlon of Doped Europium inOxidized BaMgAI10O17 Studied by XAFS

1167T. Honma, I. Hirosawa, Y. Shimomura*,N. Kijima*, H. Yamamoto**

Japan Synchrotron Radiation Res. Inst, Japan'Mitsubishi Chem., Japan"Tokyo Univ. of Tech., Japan

XXII IDW '04

TABLE OF CONTENTS

Workshop on Field Emission Display

Friday, December 109:10-9:20 Room 302

Opening

9:10

Opening RemarksM. Takai, Workshop Chair

9:20-10:20 Room 302

FED1: FEDs and Novel Devices

FED1 -1 A 4-ln. QVGA AMCNT-FED Driven by HighVoltage LTPS-TFTs 1171H.-Y. Tseng, Y.-W. Wang, C.-M. Chen,C.-Y. Huang, S.-S. Sheu, W.-Y. Lin, C.-T. Lee,T.-H. Chen, P.-S. Wu, Y.-H. Yeh, C.-C. Lee

ERSO/ITRI, Taiwan

FED1 - 2 Improvement of Emission and FocusingCharacteristics for CNT-FED 1175

S. Watanabe, T. Shiroishi, A. Hosono,S. Nakata, K. Nishimura, T. Sawada,M. Fujikawa, T. Yamamuro, Z. Shen, F. Abe,S. Okuda, K. Oono, Y. Hlrokado, A. Inoue,M. Inumochi

Mitsubishi Elec, Japan

FED1 - 3 Withdrawn

FED1 - 4 Flat Lamp Fabrication Using Double-WalledCarbon Nanotubes Synthesized by ThermalCVD 1183

Y.-D. Lee''*", H. J. Lee', S. I. Moon',H.-S. Hwang", J. H. Han", J.-E. Yoo",Y.-H. Lee*", S. Nahm*", B.-K. Ju**KIST, Korea

"lljin Nanotech, Korea'"Korea Univ., Korea

FED1 - 5L Luminance Uniformity for Spindt Type FieldEmission Displays 1187S. Kumagai, Y. Hatano

Sony EMCS, Japan

13:35-15:15 Room 302

FED3: FE Materials and Emission Characteristics (1)

FED3 -1: Invited Laser Irradiation to CNT Cathodes

for Large Diagonal FEDs 1201

K. Murakami, W. Rochanachirapar,N. Yamasaki, S. Abo, F. Wakaya, M. Takai,A. Hosono*, S. Okuda*

Osaka Univ., Japan'Mitsubishi Elec, Japan

FED3 - 2 Enhanced Electron Emission from the CNT

Grown with a SiNx Capping Layer 1205S. H. Lim, K. C. Park, J. H. Moon, B. K. Choo,H. S. Yoon, D. Pribat*, J. JangUniv. of Kyung Hee, Korea'Ecole Polytech., France

FED3 - 3 Measurement of Field Emission

Characteristics of Laser Irradiated Carbon

Nanotubes 1209

Y. Gotoh, V. Kawamura, K. Ishizu, H. Tsuji,J. Ishikawa, S. Nakata*, S. Okuda*

Kyoto Univ., Japan'Mitsubishi Elec, Japan

FED3 - 4 Field Emission Properties from DifferentKinds of CNT Film 1213

C.-Y. Hsiao, Y.-A. Li, J.-L Tsai, K. Cheng,S.-H. Lee, P.-H. Chang, C.-H. Hsiao,W.-S. Hsu, J.-S. Fang, C.-C. Kuo, T.-F. ChanTECO Nanotech, Taiwan

FED3 - 5 Investigation of Graphite Nanofiber as anEmitter for FED 1217

M. Ushirozawa, K. Hagiwara, T. Sakai, T. Takei,T. Yamamoto, M. Hirakawa*, H. Nakano*,H. Murakami*, K. Okasaka", T. Sasaki"

NHK, Japan'ULVAC, Japan"ULVAC Coating, Japan

FED3 - 6 Self-Focused Gate Structure for Carbon

Nanotube Field Emitters 1221

Y.-H. Song, K.-B. Kim, S.-H. Lee, C.-S. Hwang,J. H. Lee, K.-Y. KangETRI, Korea

10:40-11:50 Room 302

FED2/PH5: FEDs and Phosphors for FEDs

FED2/PH5 -1: Invited Development of Field Emission

Display 1189S. Itoh

Futaba, Japan

FED2/PH5-2 Novel Display Panel Utilizing Field Effect-Ferroelectric Electron Emitters 1193

Y. Takeuchi, T. Nanataki, I. Ohwada

NGK Insulators, Japan

FED2/PH5 - 3 Eu2+ Doped A2A'(B03)2 (A=Ba,Sr, A'=Mg,Ca)

Phosphor Thin Films Prepared by Pulsed

Laser Deposition Technique 1197M. Mizumo, T. Kunimoto*, K. Ohmi,H. Kobayashi*Tottori Univ., Japan'Tokushima Bunri Univ., Japan

15:30-17:00 Room 302FED4: FE Materials and Emission Characteristics (2)

FED4 -1 HfC Coated Si-FEA with a Built-in Poly-SiTFT 1225

M. Nagao, Y. Sacho, S. Kanemaru,T. Matsukawa, J. Itoh

Nat. Inst, ofAdvanced Ind. Sci. & Tech., Japan

FED4 - 2 Effect of Thermal Annealing On LeakageCurrent of Field Emitters Fabricated UsingBeam Assisted Processes 1229

K. Murakami, N. Yamasaki, S. Abo, F. Wakaya,M. Takai

Osaka Univ., Japan

FED4 - 3 Effects of the Thermal Annealing on the

Field Emission Characteristics of an

Oxidized Porous Polysilicon Field Emitter

1233

S. K. Han, S. I. Kwon, S. C. Bae, S. Y. Choi

Kyungpook Nat. Univ., Korea

IDW '04 XXIII

TABLE OF CONTENTS

FED4 - 4 Field Emission Energy Distributions fromSilicon Field Emitters 1237

H. Shimawaki, Y. Suzuki*, K. Sagae', Y. Neo",H. Mimura"

Hachinohe Inst, of Tech., Japan'Tohoku Univ., Japan"Shizuoka Univ., Japan

FED4 - 5 Boron Nitride Field Emitter on Patterned

Substrate 1241

C. Kimura, H. Shima, K. Okada, Y. Yamamuro,T. SuginoOsaka Univ., Japan

FED4 - 6 Reduction of the Work Function on Mo(100)Surface Covered with Zr02 1245H. Nakane, S. Satoh, H. Adachi

Muroran Inst, of Tech., Japan

OLED1 - 3 High Efficiency Top Emitting OLEDs on a-SiActive Matrix Backplanes with LargeAperture Ratio 1265J. Birnstock, J. Blochwitz-Nimoth, M. Hofmann,

M. Vehse, G. He*, P. Wellmann*, M. Pfeiffer*,and K. Leo'

Novated, Germany'Tech. Univ. Dresden, Germany

OLED1 - 4 Operating Physics and Newly Developed

Technologies of Higher Performance FullColor OLEDs Based on Color Conversion

Method 1269

K. Sakurat, H. Kimura, K. Kawaguchi,

M. Kobayashi, T. Suzuki, Y. Kawamura,H. Sato, M. Nakatani

Fuji Elec. Advanced Tech., Japan

15:00-16:25 Room 301

11:50-12:35 Room 302 OLED2: Material

FED5: FE Materials

FED5 -1L Emission Statistics for HfC Coated Poly-SiEmitter Arrays 1249D. Nicolaescu, M. Nagao, V. Filip*,S. Kanemaru, J. ItohNat. Inst, ofAdvanced Ind. Sci. & Tech., Japan'Univ. of Bucharest, Romania

FED5 - 2L Sandblast Activation of Carbon Nanotube

Cathodes 1251

R. L Fink, Y. J. Li, M. Yang, Z. Yaniv,S. Katanahara*

Appl. Nanotech, USA

'Alps Eng., Japan

FED5 - 3L Carbon Nanowalls for Field-Emission and

Light-Source Applications 1253N. Jiang*'", H. X. Wang', H. Hiraki*, M. Ohara',M. Haba*,A. Hiraki*'"

*Dialight Japan, Japan"Kochi Univ. of Tech., Japan

12:20-13:30

Outstanding Poster Paper Awards at Exhibition Hall B

OLED2 -1: Invited Phosphorescent OLEDs by OrganicVapor Phase Deposition 1273T. X. Zhou, B. D'Andrade, T. Ngo,S. R. Forrest*, M. Shteln', J. J. Brown

Universal Display, USA'Princeton Univ., USA

OLED2 - 2 Flexible Color OLED Display using WhiteLight-Emissive Layer based onPhosphorescent Polymers 1277M. Suzuki, T. Suzuki, T. Tsuzuki, S. Tokito,T. Kurita, F. SatoNHK, Japan

OLED2 - 3 Temperature Dependence of L and V ofOLED Devices 1281

E Young, S. Grabowskl*, H. Boerner*

Philips Res., The Netherlands'Philips Res., Germany

OLED2 - 4 Novel Mg:Alq3/W03 Connecting Layer forTandem White Organic Light EmittingDiodes (WOLEDs) 1285C.-C. Chang, S.-W. Hwang, H.-H. Chen,C. H. Chen, J.-F. ChenNat. Chiao Tung Univ., Taiwan

Workshop on Organic LED Displays16:40-18:05 Room 301

Wednesday, December 813:20-14:45 Room 301

OLED1: Panel

OLED1 -1: Invited Polymer OLED Television ImageQuality 1257C. N. Cordes, W. H. M. Van Beek, F. J. Vossen,A. A. M. Hoevenaars, R. G. H. Boom,N. C. van der Vaart, D. A. Fish*, M. J. Childs*Philips Res. Labs., The Netherlands*Philips Res. Lab., U. K.

OLED1 - 2 Development of Thin Film Passlvated 14.1"a-Si AMOLED 1261J. H. Jung, H. Kim, J. S. Lim, J. S. Rhee,S. P. Lee, N. D. Kim, J. W. Lee*, B. K. Ju*,K. Chung

Samsung Elect, Korea

*KIST, Korea

OLED3: Device Structure

OLED3 -1: Invited A Challenge to Material Design forHigh Performance OLED 1289K. Ueno, S. Okada, A. SenooCanon, Japan

OLED3 - 2 White Multi-Photon Emission OLED without

Optical Interference 1293M. Horll, Y. Jinde, S. Tanaka, A. Ogawa,Y. Kawakami,Y. Naito

Stanley Elec, Japan

OLED3 - 3 Very High-Efficiency Deep Blue OrganicLight-Emitting Devices Having a Carrier-Blocking Polymer Layer 1297A. Mikami, T. Koshiyama, T. TsubokawaKanazawa Inst, of Tech., Japan

XXIV IDW '04

TABLE OF CONTENTS

OLED3 - 4 High Efficient Red Organic Light-EmittingDevices Having the Dotted-Line DopingStructure in an Alq3+Rubrene Mixed Host

Emitting Layer 1301C. M. Lee, D. I. Kim, J. W. Han

Sejong Univ., Korea

Thursday, December 99:00-10:25 Marine Hall

AMD2/OLED4: AM-OLED (1)

AMD2/OLED4-1: Invited High-Pertormance and Low-PowerAMOLED Using White Emitter with Color-Filter Array 259K. Mameno, R. Nishikawa, T. Omura,S. Matsumoto, S. A. Van Slyke*, A. D. Arnold*,T. K. Hatwar*. M. V. Hettel*. M. E. Miller*,M. J. Murdoch*, J. P. Spindler*Sanyo Elec, Japan*Eastman Kodak, USA

AMD2/OLED4-2 2.2-in. QVGA AMOLED with Current De-

Multiplexer TFT Circuits 263

Y. Matsueda, D. Y. Shin, K. N. Kim, D. H. Ryu,

a Y. Chung, H. K. Kim, H. K. Chung,O. K. Kwon*

Samsung SDI, Korea

'Hanyang Univ., Korea

AMD2/OLED4 - 3 Optical Cross Talk in AMOLED Displays with

Optical Feedback 267

A. Giraldo, W. Oepts, M. C. J. M. Vissenberg,D. A. Fish*, N. D. Young*

Philips Res. Labs., The Netherlands

'Philips Res. Labs., UK

AMD2/OLED4-4 Comparison of Driving Methods for TFT-

OLEDs and Novel Proposal Using Time

Ratio Grayscale and Current Uniformization

271

M. Kimura, Y. Hara, Y. Kubo, T. Akai, R. Saito

Ryukoku Univ., Japan

10:40-12:05 Marine Hall

AMD3/OLED5: AM-OLED (2)

AMD3/OLED5-1: Invited Solution for Large-Area Full-Color

OLED Television - Light Emitting Polymerand a-Si TFT Technologies - 275

T. Shirasaki, T. Ozaki, T. Toyama, M. Takei,

M. Kumagai, K. Sato, S. Shimoda, T. Tano,K. Yamamoto, K. Morimoto, J. Ogura,R. Hattori*

Casio Computer, Japan

'Kyushu Univ., Japan

AMD3/OLE05 - 2 A Novel Digital-Gray-Scale Driving Method

with a Multiple Addressing Sequence for

AM-OLED Displays 279

A. Tagawa, T. Numao, T. Ohba

Sharp, Japan

AMD3/OLED5 3 A 2.0-in. AMOLED Panel with Voltage

Programming Pixel Circuits and Point

Scanning Data Driver Circuits 283

N. Komiya, C. Y. Oh, K. M. Eom, Y. W. Kim,

S. C. Park, S. W. Kim

Samsung SDI, Korea

AMD3/OLED5 -4 A Simple Data Driver Architecture to

Improve Uniformity of Current-Driven

AMOLED 287

H. Y. Huang, W. T. Sun, C. C. Chen,J. C. Tseng, S. Hopf, C. F. Sung, C. H. Li,S. H. Li, J. C. Peng, Y. F. Wang, J. J. Lih,C. S. YangAU Optronics, Taiwan

13:30 -16:30 Exhibition Hall B

Poster AMD/OLEDp: Active-Matrix OLED

AMD/OLEDp 1 A Circuit for Testing TFT-Arrays of AMOLED

Displays519

D. Nakano, Y. Sakaguchi, K. Imura, A. Ohta

IBM Japan, Japan

AMD/OLEDp-2 Active Organic Light Emitting Diode Drive

Circuit 523

H.-R. Han*'", C.-C. Kuo*>**, W.-T. Liao*,

S.-T. Lo*, W.-C. Wang*'Wintek, Taiwan

"Nat. Chung Hsing Univ., Taiwan

AMD/OLEDp -3 A New AMOLED Pixel Driving Scheme

Employing VDD Line Elimination 527

W.-J. Nam, J.-H. Lee, S.-H. Jung, C.-W. Han,M.-K. Han

Seoul Nat. Univ., Korea

AMD/OLEDp -4 A New AMOLED Pixel Design CompensatingThreshold Voltage Degradation of a-Si:H TFT

and OLED 531

J. H. Kim, J.-H. Lee, W.-J. Nam, B.-H. You,M.-K. Han

Seoul Nat. Univ., Korea

AMD/OLEDp -5 Uniformity of AM-OLED Pixels Circuits

Using as-Deposited Polysilicon TFTs

Improved by Slicing Effect 535

A. Gaillard*'", T. Mohammed-Brahim',S. Crand*, R. Rogel*, C. Prat", P. Leroy""Univ. de Rennes 1, France

"Thomson Multimedia R&D, France

AMD/0LEDp-6L A New Voltage Driven Pixel Circuit for LargeSized AMOLED Panel 539

Y. J. Park, J. Huh, B. K. Kim, M. H. Jung,

O. H. Kim

Pohang Univ. of Sci. & Tech., Korea

AMD/OLEDp-7L The Suppression of the Threshold VoltageShift in a-Si TFT Pixel for AMOLED by

Employing the Reverse Bias Annealing541

J. H. Lee, C. W. Han, B. H. You, M. K. Han

Seoul Nat. Univ., Korea

14:00 -17:00 Exhibition Hall B

Poster OLEDp: OLED Poster

OLEDp -1 Organic Polymer Films Doped by Organic

Dyes for OLEDs 1307

V. Nakanishi*, L. Fenenko*'**, P. Smertenko"

'Shizuoka Univ., Japan

"V, E Lashkaryov (nst. of Semiconductor

Physics ofNASU, Ukraine

IDW '04 XXV

TABLE OF CONTENTS

OLEDp - 2 Red Electrophosphorecence from

Polyactylene-Based Light Emitting Diode1311

Z L Xie, J. W. Y. Lam', H. J. Peng, M. Wong,B. Z. Tang*, H. S. KwokHong Kong Univ. of Sci. & Tech., Hong Kong

OLEDp - 3 Deep Blue Dopant for High PerformanceOLEDs and Color Purity 1315M.-T. Lee, C.-M. Yeh, C. H. ChenNat. Chiao Tung Univ., Taiwan

OLEDp - 4 Indole Based Compounds as Host Materialsfor Triplet Emitters in Organic Light EmittingDiodes 1319

M.-H. Ho, Y.-S. Wu, S.-F. Hsu, T.-Y. Chu,J. F. Chen, C. H. ChenNat. Chiao Tung Univ., Taiwan

OLEDp - 5 Effects of Double Buffer Layers on the

Optical Properties of White Organic LightEmitting Diodes 1323M. Yokoyama, G. T. Chen, S. H. Su, J. L. Kwo,S. L Fu

l-Shou Univ., Taiwan

OLEDp - 6 Highly Efficiect Photoresponsive OrganicLight-Emitting Devices with PhosphorescentMaterials 1327M. Chikamatsu; H. Konno', T Oosawa*'",M. Yamashita", Y. Yoshida*, K. Yase*'Nat. Inst, of Advanced Ind. Sci. & Tech., Japan"Tokyo Univ. of Sci., Japan

OLEDp - 7 Top Emitting OLEDs on Flexible Substrate1331

C.-S. Hwang, S.-H. Ko Park, S. M. Jeong,J. Y. Oh, M. Y. Yoon, J. I. Lee, Y. S. Yang,M. K. Kim, L M. Do, H. Y. ChuETRI, Korea

OLEDp - 8 White OLEDs with a Single Emissive Layer1335

H. Y. Chu, J.-l. Lee, Y.S. Yang, J. Y. Oh,S.-H. K. Park, M.-K. Kim, C.-S. Hwang,D.-H. Hwang, J. JangETRI, Korea

'Kumo Univ., Korea

"Kyung Hee Univ., Korea

OLEDp - 9 Improvement of Efficiency and Brightnessby Insertion of the Novel Layer in Alq3-Based OLEDs 1339Y. M. Kim*'", J. W. Lee*'*", J. S. Park''"*,M. Y. Sung",J. Jin*", B. K. Ju*, J. K. Kim**KIST, Korea

"Korea Univ., Korea

'"Kyunghee Univ., Korea

OLEDp-10 All-Wet-Process Organic ElectroluminescentDevice Using Electron Transporting andAlcohol-Soluble Organic Semiconductor

1343Y. Goto, T Hayashlda; M. Noto*Kyushu Elec. Power, Japan'Daiden, Japan

OLEDp -11 Improving Characteristics of OLED with LowWork Function Anode 1347S.-H. Park, J.-l. Lee, C.-S. Hwang, H. Y. ChuETRI, Korea

OLEDp -12 Preparation of ITO Thin Films for Display

Application by FTS (Facing TargetsSputtering) System 1351G. H. Kim, H. W. Kim, H. K. Kim*, M. J. Keum,K. H. Kim

Kyungwon Univ., Korea

'Samsung SDI, Korea

OLEDp -13 Deposition of AZO Thin Films by FTS

System with Sputtering Current 1355H. W. Kim, G. H. Kim, M. J. Keum, I. H. Son;H. W. Choi, K. H. Kim

Kyungwon Univ., Korea

'Shinsung College, Korea

OLEDp -14 Characteristics Improvement of Flexible

Organic Light-Emitting Devices by Nickel-Doped Indium Tin Oxide Anode 1359C.-M. Hsu, C.-L. Tsal, C.-F. Lu, W.-T. WuSouthern Taiwan Univ. of Tech., Taiwan

OLEDp-15 Withdrawn

OLEDp -16 Fabrication of OLEDs on Epoxy Substrateswith SINX/CNX:H Multi-Layer Barrier Films

1367

K. Akedo, A. Mlura, H. Fujikawa, Y. Taga,Y. Akada', T. Umehara*

Toyota CRDL, Japan'Nltto Denko, Japan

OLEDp -17 Synthesis and Properties of ColorlessPolyimide and Its Nanocomposite 1371J. C. Won, S-L. Ma, Y. S. Kim, M. H. Yl,J. H. Lee, K-Y. Choi

Korea Res. Inst, of Chem. Tech., Korea

OLEDp -18 Selective Growth of Encapsulation Layerand Its Influence on Organic Light EmittingDiodes 1375

J. Oh, S. K. Park, C. Hwang, Y. S. Yang, J. Lee,M. K. Kim, H. Y. Chu, K. S. SuhETRI, Korea

OLEDp -19 Flexible Transparent Organic Light EmittingDevices (FTOLED) 1379T. Uchida, S. Kaneta, M. Ichihara, M. Ohtsuka,S. Hoshi; S. Webster", R. Czerw**,D. L. Carroll"

Tokyo Polytech. Univ., Japan'Yazakl Meter, Japan"Wake Forest Univ., USA

OLEDp - 20 Flexible Barrier Substrates with ParyleneBuffer Layer for Flexible Orgarnic LightEmitting Diode (FOLED) 1383S. C. Nam, H. Y. Park, K. C. Lee, K. G. Choi,C. J. Lee*, D. G. Moon*, Y. S. Yoon**Nurlcell, Korea

'Korea Elect. Tech. Inst, Korea"Konkuk Univ., Korea

OLEDp - 21 Manufacturing of Encapsulation Layers forOLED In Polymerization and PlasmaDiffusion 1387C.-C. Lu, J.-H. Wu, S.-K. Lo, L Yu, C.-K. Tzen,S.-J. Tang

Chunghwa Picture Tubes, Taiwan

XXVI IDW '04

TABLE OF CONTENTS

OLEDp - 22 Novel Photoelectron Spectrometer Equippedwith Open Counter for Ionization PotentialMeasurements of OLED Materials 1391V. Nakajima, D. Yamashita, A. Endo*,T. Oyamada*, C. Adachi*, M. Uda"Rlkenkeiki, Japan'Chitose Inst, of Sci. & Tech., Japan"Waseda Univ., Japan

OLEDp - 23 The Temperature Dependence of PL

Intensity and Fluorescence Lifetime in

Polymer Light-Emitting Diodes 1395H. Uchida, Y. Fujita, M. Koden, C. Adachi*

Sharp, Japan'Chitose Inst, of Sci. & Tech., Japan

OLEDp - 24 Analysis of the Deterioration Mechanism of

Phosphorescence OLED 1399

R. Kamoto, M. Ichikawa*, K. Araki*,Y. Taniguchi*Micro Analysis Lab., Japan'Shinshu Univ., Japan

OLEDp - 32L Novel Host Polymer for Green

Phosphorescent Dendrimer 1423

S. Mikami, C. Sekine, M. Mayumi, J. Pillow;Z. Liu", N. Conway"Sumitomo Chem., Japan

'CDT Oxford, UK

"CDT, UK

OLEDp- 33L Phosphorescent Organic Light-EmittingDiodes Using Platinum Complexes with

NACAN-Coordinating Tridentate Ligand.1425

T. Satoh, W. Sotoyama, M. Kinoshita,J. Kodama, N. Sawatari, H. Inoue

Fujitsu Labs., Japan

OLEDp - 34L Analysis of Failure Modes of Multilayer ThinFilm Encapsulation of OLED Devices and Ca

Films 1427

X. Chu, L Moro, R. J. Visser

Vitex Sys., USA

OLEDp - 25 Integrated Host/Dopant Deposition for LargeOLED Panel Manufacturing 1403M. Shibata, R. Hartmann*, P. Chow*

Sumitomo, Japan*SVTAssociates, USA

OLEDp - 26 A Simulation of Current-VoltageCharacteristics for Alq3 Single Layer

Organic Light Emitting Diodes 1407N. Nakamura, A. Takahashi, S. Suwa,T. Waklmoto, M. KunigitaAsahi Glass, Japan

Workshop on 3D/Hyper-RealisticDisplays and Systems

Wednesday, December 813:30-14:50 Room 302

3D1: Hyper Reality

3D1-1:

OLEDp - 27 Effective Power Reduction in a Non-

Emissive State of Passive-Matrix OLED

1411 3D1-2:

R. Hattori, S. Ohashi, S. Sugimoto, G. Yip

Kyushu Univ., Japan

OLEDp-28L Withdrawn

OLEDp - 29L Fabrication of Hybrid Thin Film Passivated

Flexible OLED 1417

S. H. Choi, J. M. Kim, M. H. Oh, J. S. Kim,C. J. Lee*, D. G. Moon*, J. I. Han*

Dankook Univ., Korea

*KETI, Korea

OLEDp - 30L Durability Test Of Solution-Processed

Organic Electrophosphorescent Devices

with Small Organic Molecules 1419

M. Ooe*, S. Naka*'**, H. Okada*'",

H. Onnagawa*'"

'Toyama Univ., Japan"Japan Sci. & Tech. Agent, Japan

OLEDp - 31L Inverted Organic Electroluminescent

Devices with Molybdenum Trioxide as a Hole

Injection/ Sputtering Buffer Layer 1421T. Miyashita*, S. Naka*'", H. Okada*'",H. Onnagawa*1"*Toyama Univ., Japan"Innovation Plaza Tokai, Japan

Invited Development of CyberDome - aScalable Immersive Projection Display with

Hemi-Spherical Screen 1431

N. Shibano, K. Sawada, H. Takemura*

Matsushita Elec. Ind., Japan*Osaka Univ., Japan

Invited Mixed Reality Audio-Visual

Reproduct