institute for scientific and technological...
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![Page 1: Institute for Scientific and Technological Researchcern.ch/rd50/1st-workshop/talks/3I-RD50-Maurizio-Boscardin.pdf · ATLAS Pixel Detector prototypes moderated p-spray pixel “n-on-n”](https://reader033.vdocuments.mx/reader033/viewer/2022041708/5e4685c93f1434310b02abe7/html5/thumbnails/1.jpg)
1RD50 WORKSHOP M. Boscardin
ITCITC--irstirstInstitute forInstitute for Scientific and Scientific and
Technological ResearchTechnological Research
Trento Trento –– ItalyItaly
http://www.itc.it/
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1RD50 WORKSHOP M. Boscardin
ITC-irst is part of Istituto Trentino di Cultura (ITC)• Founded in 1976• Dimensions:
• Full time researchers: 180• Technical support: 25• PhD students, consultants 50
• Competences: • Information Technology• Physical-Chemical analysis of Surfaces• Microsystems
ITC-irst
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1RD50 WORKSHOP M. Boscardin
Microsystems Divisionhttp://mis.itc.it/
The division designs and realises silicon microsystems, particularly: • sensors for bio-medical and environmental applications; • micro-electro-mechanical systems (MEMS) for industrial and consumer applications; • electro-optical microsystems for vision and non-destructive measurements;• radiation detectors.
Researchers: 30Technicians: 18PhD students: 5
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1RD50 WORKSHOP M. Boscardin
Microfabrication FacilityMicrofabrication Facility 250sq.m class 10 + 250sq.m class 100; 4 inchEquipment: Ion implanter;
11 furnaces ; Mask Aligner;Sputter metal deposition; Dry etching: Al, SiO2, poly and Si3N4;Dicing Saw and ball bonder.
Clean Room Staff: 4 researchers, 12 operators
Simulation and design tools: Tanner tools, SILVACO and ISE-TCAD
Testing Lab. : Manual probe station (Karl Suess PM8);Automatic probe station (Electroglas 2001 CX) for double-sided detectors;Parametric test (HP4062UX, HP4145B, HP4280A, HP4192A, Keithley 2410)
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1RD50 WORKSHOP M. Boscardin
Research Activities on Silicon Radiation Detectors at IRST
•Microstrip detectors for: AMS tracker and ALICE - ITS•Pixel detectors for medical imaging•Microstrip detectors with integrated front-end electronics•Radiations hard devices•Custom devices for industrial applications
production and research activitieson detectors are carried on in parallel
M. Boscardin, G.-F. Dalla Betta, P. Gregori, C. Piemonte, G. Pucker, S. Ronchin, M. Zen, N. Zorzi
http://mis.itc.it/PROGETTI/SRD/srd.html
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1RD50 WORKSHOP M. Boscardin
Development of mstrip technologies
Double sided detectors withintegrated poly-Si bias resistorsand coupling capacitors
n Si-substrate-
p+
p+
p+
p+
n+
n+
SiO
TEOS1
TEOS2
poly-Si
metal
overglass
2
Layout of CMS-like detectors
Development of a fabrication technology for double-sided AC-coupled silicon microstrip detectors, NIMA 460, pp. 306-315, 2001
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1RD50 WORKSHOP M. Boscardin
AMS microstrip detectors
• The production of 400 detectors has been recentlyaccomplished and delivered to the AMS organization.
A typical leakage current scanA photograph of a silicon wafer with an AMS microstrip detector
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1RD50 WORKSHOP M. Boscardin
ALICE microstrip detectors
• The fabrication of 400 microstrip detectors for ALICE - ITS is in progress.
• Average leakage current of single strips of about 200pA• The percentage of broken capacitors lower than 1%.
Development of ALICE microstrip detectors at Irst,NIMA 461, pp. 188-191, 2001
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1RD50 WORKSHOP M. Boscardin
ATLAS Pixel Detector prototypes
moderated p-spray
pixel “n-on-n”oxygen enriched substrate“moderated p-spray isolation”
A specially tailored technology has been developed for the fabrication of ATLAS pixel detector prototypes on thin silicon wafers (250 µm).
p-spray
Fabrication of ATLAS pixel detector prototype at Irst, NIMA 465, pp. 83-87, 2001
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1RD50 WORKSHOP M. Boscardin
Pixel detectors for medical imaging
• Silicon pixel detectors formedical applications, and, in particular, in the field of digitalradiography.
• Collaboration with INFN groups• Pixel detectors made on thick
silicon wafers (525-800 mm) and possibly embedding the front-end transistor (JFET) in the detecting element.
Design of semiconductor detector for digital mammography, presented @ IWORID 2002 Amsterdam
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1RD50 WORKSHOP M. Boscardin
Detectors with integrated electronics
N-JFET (W/L=200/12 µm)
PIN diode(0.32 mm2)
Am241 spectrum acquired at RT(ENC = 60 electrons rms @ τs=10 µs)
PIN+JFET test structures
Monolithic integration of Si-PIN diode and n-channel double-gate JFET’s for room temperature X-ray spectroscopy, NIMA 458, pp. 275-280, 2001
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1RD50 WORKSHOP M. Boscardin
Detectors with integrated electronics
Project with Universities of Pisa, Pavia, Trieste, Bergamo.
Monolithic chargesensitive amplifier
Strip detector with integrated source-follower
Strip detector
Source-follower
Poly-Si bias resistors
Feasibility studies of microelectrode silicon detectors with integrated electronics, NIMA 478, pp. 372-376, 2002
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1RD50 WORKSHOP M. Boscardin
Detectors with integrated electronics
Ionizing radiation effects on JFET devices and circuits fabricated in a detector-compatible process, paper presented @ RADECS2002 - Padova
Gate referred noise voltage spectrum for a JFET with W/L=1000/4. Before and after exposure to a 100 kGy γ-ray integrated dose.
Equivalent Noise Charge as a function of peaking time for the preamplifier, before and after exposure to γ-ray.
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1RD50 WORKSHOP M. Boscardin
Oxygenation Process
Oxygen concentration profiles measured by SIMS (ITME, Poland) on IRST samples
Irradiation testsin progress with : •Protons @ Legnaro (INFN Padova)•High energy electrons @ INFN Trieste
IRST_OXY @ 1150°C12h dryO2 + 36h N2
0E+00
2E+12
4E+12
6E+12
2.0E+13 4.0E+13 6.0E+13 8.0E+13 1.0E+14 1.2E+14
Φ (p/cm2)
∆Nef
f(1/
cm3 )
IRST_STD
IRST_OXY
∆ Neff [ Neff(F) - Neff(0) ]
Data provided by INFN – Padova
Radiation hardness of silicon diodes for high energy physics applications,to be presented @ NSS 2002 Norfolk
O - overview
1.0E+15
1.0E+16
1.0E+17
1.0E+18
0.0 50.0 100.0 150.0 200.0Depth [um]
Con
cent
rati
on [
at/c
m3]
s01
s02
s03
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1RD50 WORKSHOP M. Boscardin
• Motivated by results from BaBar microstrip detectors
• Test structures irradiated with 900 MeV electrons
• Both surface and bulk radiation damage observed
• Substrate type-inversion
Increasing fluence
Studies of radiation damage by 900 MeV electrons on standard and oxygenenriched silicon devices presented by S.Dittongo
Studies of radiation damage from high energy electrons (Elettra, Trieste)
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1RD50 WORKSHOP M. Boscardin
All-P-type multiguard termination
diodemultiguards
scribe-line
large guard
reverse voltage (V)
40 80 120 160 200
2
1
S1
S3S2
S4
I (
A)
LGµ
00
Φ=1x1012 cm-2
(1MeV eq.)
Large-guard current vs reverse-bias voltage after neutron irradiations.
• multiple p+ floating guard rings with different multiguard layout (S1 … S4)• field-plates extending inward and overlapping the preceding ring implant • no n+ implant, with process simplification
Top right corned of the S2 layout.
A novel silicon microstrip termination structure with all-p-type multiguards and scribe-line implants, to appear in IEEE TNS Aug.2002
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1RD50 WORKSHOP M. Boscardin
Detectors on thinned silicon
Silicon wet etching(TMAH solutions on Si <100>)
•Standard process (single side)•test the idea on simple diode
From 300 µm to 50 µm
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1RD50 WORKSHOP M. Boscardin
Conclusions
• Silicon radiation detectors represent one of the mainresearch activities at ITC-IRST
• Near future developments include:
• ALICE microstrip detectors
• Microstrip detectors with integrated electronics
• All-p-type termination structures
• Oxygenated silicon wafers
• New detector structures (thin and 3D) } RD50