infineon rf power ldmos product roadmap …€¦ · · 2014-04-08infineon rf power ldmos product...

Infineon RF Power LDMOS Product Roadmap June, 2012

June 7, 2012 Copyright © Infineon Technologies 2011. All rights reserved. June 7, 2012 Copyright © Infineon Technologies 2011. All rights reserved. Page 2

The Infineon Advantage

Leading-edge RF

Performance

Highest power density

Excellent efficiency

Excellent linearity

Enhanced DPD

performance at high IB

Robust transistors

Thin die technology

Low thermal resistance

High RF consistency

High reliability

Lowers the amplitude

of the gain spike.

Space efficient

Lowers BB parasitics

Enables high VBW

Available for these

package styles:

275 (PP)

288 (SE, PP)

Outstanding DPD

performance due to

improved impedance

characteristics at

baseband

Very high IBW

Rugged

State-of-the-art

Infineon LDMOS Fab,

Regensburg, Germany

Fully automated

assembly and test

production facility in

Morgan Hill, CA, USA

100% DC and RF

power tested

Overmold assembly in

multiple AP facilities

Advance LDMOS Technology

Smart Discrete Package

Rugged, Wideband Performance Manufacturing

xBT


LD9LF Technology Generation Updated Portfolio 700MHz to 1000 MHz

Best in Class Ruggedness & RF Performance

High Power Density + Innovative Pkg Technology Enable Compact Doherty Designs

Doherty applications

700 – 1000 MHz

Up to 360 Watts

Industry Leading Performance

Gain ~19dB (class AB, at “optimum” tuning point)

Product level PAE ~60%

Enhanced IBW (xBT)


Increased peak power

>250W in Single Ended package

>400W in Push-Pull Package

Further Improved Thermal Performance

Enhanced ruggedness and IBW (xBT) >400W

For Compact Doherty

>270W

LDMOS Gen LD9 provides 2% better efficiency

and 2dB gain improvements


Po

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Available 1H „12

ES PR

2H „12 Future

700 MHz Output Transistors

P1dB ~ 2x75 W

725-768 MHz

H-37248-4

PTFB071502FC

P1dB ~ 360 W 725-768 MHz H-34275-6/2

PTFB073608FV xBT

P1dB ~ 270 W 725-768 MHz H-34288-4/2

PTFB072707FH

P1dB ~ 210 W

725-768 MHz

H-37248-4

PTFA072401FL (xBT)


Po

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Available 1H „12

ES PR

2H „12 Future

800-1000 MHz Output Transistors

P1dB ~ 270 W

920–960 MHz

H-34288-4/2

PTFB092707FH

P1dB ~ 360 W

920–960 MHz

H-37275-6/2

PTFB093608FV

P1dB ~ 90 W

920–960 MHz

H-3x265-2

PTFB090901EA/FA

P1dB ~ 270 W

791–821 MHz

H-34288-4/2

PTFB082817FH

P1dB ~ 360 W

920–960 MHz

H-37275-6/2

PTFB093608FV xBT


Introducing LD10 LDMOS Portfolio 1.8 GHz to 2.6 GHz

Complete Lineup for Doherty Amplifiers

Strong Development Pipeline

Full Next Generation Platform

2% higher Doherty efficiency

>1.5 dB higher gain than LD9

Improved robustness under fast pulse condition

First Products at 2.6 GHz

Power Levels up to 280 W

Asymmetric 10W + 20W for small cells

Enhanced IBW


Increased peak power

>300W in Single Ended package

>400W in Push-Pull Package

Enhanced xBT technologies for wider

signal bandwidth

Further Improved Thermals

>400W >270W >300W

PTFC261402FC Broadband Sweep


Po

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Available 1H „12

ES PR

2H „12 Future


P1dB ~ 140W

1930–1990 MHz

H-3x248-2

PTFB191501E/F

P1dB ~ 320 W

1930–1990 MHz

H-37275-6/2

PTFB193404F

P1dB ~ 200W

Asymmetric

(80+120W)

1805–1880 MHz

H-34248-4

PTAB182002FC

P1dB ~ 210 W

1930–1990 MHz

H-3x288-4/2

PTFB192503EL/FL

P1dB ~ 210 W

1805–1880 MHz

H-3x288-4/2

PTFB182503EL/FL

P1dB ~ 320 W

1805–1880 MHz

H-37275-6/2

PTFB183404F P1dB ~ 320 W

1805–1880 MHz

H-34275G-6/2

PTFB183408SV xBT

P1dB ~ 320 W

1910–1990 MHz

H-37275G-6/2

PTFB193408SV xBT


Asymmetric Transistors Transistors for Doherty Configuration

Peak : ~ 120 W

Main : ~ 80 W

1805-1880 MHz

Typ. Doherty

Gain : 16 dB

Efficiency : 44%

Pout: 45 dBm Avg.

PTAB182002FC

H-34248-4

24

27

30

33

36

39

42

45

48

51

54

15.0

15.2

15.4

15.6

15.8

16.0

16.2

16.4

16.6

16.8

17.0

38 39 40 41 42 43 44 45 46 47 48

Eff

icie

ncy

Gain

[d

B]

Po [dBm avg]

Gain Eff

Doherty Performance 1C WCDMA, 1842 MHz, 28V, Idq=0.5A, 10dB PAR


Po

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Available 1H „12

ES PR

2H „12 Future


P1dB ~ 140 W

2110–2170 MHz

H-3x248-2

PTFB211501E/F

P1dB ~ 80W

2110–2170 MHz

H-37265-2

PTFB210801FA

P1dB ~ 140 W

2110–2170 MHz

H-3x288-6

PTFB211503EL/FL

P1dB ~ 160 W 2110–2170 MHz H-3x288-6

PTFB211803EL/FL

P1dB ~ 210 W 2110–2170 MHz H-3x288-6

PTFB212503EL/FL

P1dB ~ 280 W 2110–2170 MHz H-37275-8

PTFB213004F P1dB ~ 320 W 2110–2170 MHz H-34275-6/2

PTFB213208FV xBT

P1dB ~ 2x70 W 1880–2025 MHz H-34248-4

PTFB201402FC

P1dB ~ 210 W 2110–2170 MHz H-34288G-4/2

PTFB212507SH xBT


Po

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Available 1H „12

ES PR

2H „12 Future

2.3–2.7 GHz Output Transistors

P1dB ~ 2x20 W

2.6 GHz

H-34248-4

PTFC260402FC

P1dB ~ 4x70 W

2.6 GHz

H-34275-6/2

PTFC262808FV xBT

P1dB ~ 2x70 W 2.3-2.4 GHz H-37248-4

PTF241402FC

P1dB ~ 10W/20 W

2.6 GHz

H-34248-4

PTAC260302FC

P1dB ~ 2x10 W

2.6 GHz

H-34248-4

PTFC260202FC

P1dB ~ 2x70 W

2.6 GHz

H-37248-4

PTFC261402FC


Po

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Available 1H „12

ES PR

2H „12 Future

Non-Cellular 50V Output Transistors

P1 dB~450 W

390-450 MHz

H-36275-4

Unmatched

PTVA035002EV 50V

P1 dB~12 W

390-450 MHz

H-36265-2

Unmatched

PTVA030121EA 50V

P1 dB~350 W

1.2-1.4 GHz

H-36248-2

Matched I/O

PTVA123501EV 50V

P1 dB~25 W

1.2-1.4 GHz

H-36265-2

Unmatched

PTVA120251EA 50V

P1 dB~1000 W

960-1215MHz

H-36275-2

Matched I/O

PTVA101K02EV 50V

P1 dB~500 W

960-1215MHz

H-36248-2

Matched I/O

PTVA106001EC 50V


Innovative 30W Asymmetric Doherty Device for LTE 2.6GHz 5W Pico/Micro Base Station

High efficiency, high performance solution for LTE @ 2.6GHz

Compact 2-in-1 solution for 5W Pave Doherty final stage in pico/micro base station

Smallest heatsink requirement and CTE matched to copper coin, due to pure copper flange

Long-term reliability through LD10M’s very high ruggedness

Asymmetric Doherty configuration Main : 14-15W (P-1dB) @ Zopt

Peak : 18-19W (P-1dB) @ Zopt

Operating Frequency 2.62 – 2.69GHz

Linear Gain 19dB Efficiency (Main) 62% @ P-3dB CW VBW >300MHz (LF gain peak)

Package 248 T2PAC (pure copper flange)

Based on latest LD10M technology

Superior performance at high frequency Very high ruggedness

Best-in-class performance @ 2.6GHz

Exceeds competing devices by ~5% efficiency and ~2dB gain

Product Features

248 Push-Pull Package 20.6 x 9.8 mm

Key Benefits

10

12

14

16

18

20

2500 2600 2700 2800

Gain

[d

B]

Freq [MHz]

26030 Gain at Po=41.0dBm

Meas


LDMOS RF Power 2-Stage Amplifiers 700 MHz to 2200 MHz

Product Frequency

MHz

POUT Watts

Gain dB

Eff. %

Test Signal

VDD Volts

Package

PTMA080152M 700 1000 20 29 49 CW 28 PG-DSO-20

PTMA210152M 1800 2200 20 28 48 CW 28 PG-DSO-20

PTMA080302M 700 1000 30 31 46 CW 28 PG-DSO-20

PTMA080304M 700 1000 2x15 31 50 CW 28 PG-DSO-20

PTMA180402EL 1800 2000 40 30 14 CDMA 28 H-33265-8

PTMA180402FL 1800 2000 40 30 14 CDMA 28 H-34265-8

PTMA180402M 1800 2200 40 30 45 CW 28 PG-DSO-20

PTMA210452EL 1900 2200 45 28 10.5 WCDMA 28 H-33265-8

PTMA210452FL 1900 2200 45 28 10.5 WCDMA 28 H-34265-8


Unmatched General Purpose Transistors 700 MHz to 2200 MHz

Product Frequency

(MHz) P1dB (W)

Gain (dB)

Eff (%)

Pout PEP (W)

Test Signal

Θjc (°C/W)

VDD

(V) Package

PTFA220041M V4 7002200 5 19 37 4 2T 5.5 28

PTFA220081M V4 7002200 9 18 37 8 2T 4.5 28

PTFA220121M V4 7002200 14 16 37 9 2T 3.4 28


Doherty Reference Designs 1800-1900 MHz

Assymetric Doherty - LTA1800-600

• Main: PTFB182503FL V1 Peak: PTFB183404F V1

• 58dBm P3dB

• 44% Efficiency at 8.5dB back off

Assymetric Doherty - LTA1900-600

• Main: PTFB192503FL V1 Peak: PTFB193404F V1

• 58dBm P3dB

• 44% efficiency at 8.5dB back off

Symmetric Doherty - LTD1800-500

• Target 1.8 GHz W-CDMA, GSM, and CDMA systems

• Smart Discrete design offers ultra-compact layout (500W) demo circuit

• Main & Peak: PTFB182503FL V1

• P3dB >56dBm

• 44% efficiency at 6dB back off


Four new high power transistors for RADAR markets

PTFB035002EV 390-450 MHz 400W 74% 19dB 275-4 type 10:1 VSWR Pulse 12 microsec 10% duty cycle

PTFB030121EA 390-450 MHz 12W 70% 24dB 265-2 type 10:1 VSWR Pulse 12 microsec 10% duty cycle

PTFB120251EA 1.2-1.4 GHz 30W 54% 16.5dB 265-2 type 10:1 VSWR Pulse 100 microsec 10% duty cycle

PTFB123501EC 1.2-1.4 GHz 350W 53% 15dB 248-2 type 10:1 VSWR Pulse 100microsec 10% duty cycle

Freq Oper. Pout @ 1dB Efficiency Gain Pkg Type Ruggedness Test Cond.


PTVA035002EV 500W, 50V, UHF Band

Features:

Designed for pulse applications; high voltage 50V Vdd

Typical performance Class AB (Vdd=50V, 12microsec pulse width, 10% duty cycle, Pout = 500W, 450MHz)

¬ Gain: 18 dB

¬ Drain Efficiency: 64%

Typical performance Class B (Vdd = 50V, 12microsec pulse width, 10% duty cycle, Pout = 500W, 450MHz, Vg=2.9V)

¬ Gain = 15.5 dB

¬ Drain Efficiency: 70%

Capable of CW operation

Capable of withstanding 13:1 load missmatch at 56dBm, 50V

Excellent thermal performance

Rth – 0.2 degC/W

Appendix


Frequency: 26 2620 ~ 2680 MHz 24 2420 ~ 2480 MHz 22 700 ~ 2200 MHz 21 2110 ~ 2170 MHz 19 1930 ~ 1990 MHz 18 1805 ~ 1880 MHz 16 1620 ~ 1670 MHz 14 1450 ~ 1500 MHz 09 925 ~ 960 MHz 08 860 ~ 894 MHz 07 725 ~ 770 MHz 04 450 ~ 860 MHz

PT X Y FF PPP C T O Vx (Ryyy)

PTFB091607FH/1 V1 R250

Die Generation: No letter – GM7 A – GM8/LD8/LDH1 B – LD9 C – LD10

Power Rating: 010 – 10 watts 130 – 130 watts 300 – 300 watts etc.

Package Technology: A – Ceramic standard eared flange (obsolete) C – Ceramic earless flange (obsolete) E – Ceramic CPC eared flange (TEPAC) F – Ceramic CPC earless flange (TEPAC) G – Plastic open cavity eared (EPOC) H – Plastic open cavity earless flange (EPOC) M – Plastic over molded – surface mount S – Ceramic open cavity surface mount (TEPAC)

Device Type: F – Discrete 28V M – 2-stage RFIC V – Discrete 50V

RF Power Product Identification System

Package Configuration/Auto-bias Discrete Transistors: 1 – Single-Ended 2 – Push-Pull 3 – Four leads Smart Discrete SE 4 – Four leads Smart Discrete PP 5 – Four leads Smart Discrete + Autobias SE 6 – Four leads Smart Discrete + Autobias PP 7 – Two leads Smart Discrete SE 8 – Two leads Smart Discrete PP For Hybrids/Modules - # of stages For ICs – # of stages

Product Revision

Optional Packing Type R250 - Tape & Reel 250pcs S250 – Tape & Reel 250pcs Txxx – Box with xxx parts

Optional: Customer Specific Product

Open-Cavity Outlines A- 265 C- 248 H-288 V- 275

Overmolded

None – SON10 R - SON 12

infineon rf power ldmos product roadmap …€¦ · · 2014-04-08infineon rf power ldmos product...

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