infineon ikw50n60t ds v02 06 en

7/25/2019 Infineon IKW50N60T DS v02 06 En

1/13

IKW50N60TTRENCHSTOP Series q

IFAG IPC TD VLS 1 Rev. 2.6 20.09.2013

Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft,

fast recovery anti-parallel Emitter Controlled HE diode

Features:

Very low VCE(sat)1.5V (typ.)

Maximum Junction Temperature 175C

Short circuit withstand time 5s

Designed for :- Frequency Converters- Uninterrupted Power Supply

TRENCHSTOP and Fieldstop technology for 600V applications offers :

- very tight parameter distribution- high ruggedness, temperature stable behavior- very high switching speed

Positive temperature coefficient in VCE(sat) Low EMI

Low Gate Charge

Very soft, fast recovery anti-parallel Emitter Controlled HE diode

Qualified according to JEDEC1

for target applications

Pb-free lead plating; RoHS compliant

Complete product spectrum and PSpice Models :http://www.infineon.com/igbt/

Type VCE IC VCE(sat),T j= 25C Tj,max Marking Package

IKW50N60T 600V 50A 1.5V 175C K50T60 PG-TO247-3

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage,Tj 25C VC E 600 V

DC collector current, limited by Tjmax

TC= 25C

TC= 100C

IC 802)

50

APulsed collector current,tplimited byTjmax IC p u l s 150

Turn off safe operating area, VCE = 600V,Tj= 175C,tp= 1s - 150

Diode forward current, limited by Tjmax

TC= 25C

TC= 100C

IF 100

50

Diode pulsed current, tplimited byTjmax IF p u l s 150

Gate-emitter voltage VG E 20 V

Short circuit withstand time3)

VGE= 15V, VCC 400V, Tj150CtS C 5 s

Power dissipationTC= 25C Pt o t 333 W

Operating junction temperature Tj -40...+175

CStorage temperature Ts t g -55...+150

Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

1J-STD-020 and JESD-022

2)Value limited by bond wire

3)Allowed number of short circuits: 1s.

G

C

E

PG-TO247-3


2/13



Thermal Resistance

Parameter Symbol Conditions Max. Value Unit

Characteristic

IGBT thermal resistance,

junction case

Rt h J C 0.45 K/W

Diode thermal resistance,

junction case

Rt h J C D 0.8

Thermal resistance,

junction ambient

Rt h J A 40

Electrical Characteristic,at Tj= 25C, unless otherwise specified

Parameter Symbol ConditionsValue

Unitmin. Typ. max.

Static Characteristic

Collector-emitter breakdown voltage V( B R ) C E S VG E = 0 V , IC = 0 . 2 m A 600 - - V

Collector-emitter saturation voltage VC E ( s a t ) VG E = 1 5 V , IC = 5 0 A

Tj =2 5C

Tj = 1 7 5 C

-

-

1.5

1.9

2

-

Diode forward voltage VF VG E = 0 V , IF = 5 0 A

Tj =2 5C

Tj = 1 7 5 C

-

-

1.65

1.6

2.05

-

Gate-emitter threshold voltage VG E ( t h ) IC = 0 . 8 m A ,VC E = VG E 4.1 4.9 5.7

Zero gate voltage collector current IC E S VC E = 6 0 0 V ,VG E = 0V

Tj =2 5C

Tj = 1 7 5 C

-

-

-

-

40

3500

A

Gate-emitter leakage current IG E S VC E = 0 V , VG E = 2 0 V - - 100 nA

Transconductance gf s VC E = 2 0 V , IC = 5 0 A - 31 - S

Integrated gate resistor RG i n t -

Dynamic Characteristic

Input capacitance Ci s s VC E = 2 5 V ,

VG E = 0 V ,

f= 1 M H z

- 3140 - pF

Output capacitance Co s s - 200 -

Reverse transfer capacitance Cr s s - 93 -

Gate charge Q G a t e VC C = 4 8 0 V , IC = 5 0 A

VG E = 1 5 V

- 310 - nC

Internal emitter inductance

measured 5mm (0.197 in.) from case

L E - 13 - nH

Short circuit collector current1)

IC ( S C ) VG E = 1 5 V , tS C5 sVC C = 4 0 0 V ,

Tj 1 50C

- 458.3 - A

1)Allowed number of short circuits: 1s.


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Switching Characteristic, Inductive Load, at Tj=25C

Parameter Symbol Conditions

Value

Unitmin. Typ. max.

IGBT Characteristic

Turn-on delay time td ( o n ) Tj = 2 5 C,VC C = 4 0 0 V ,IC = 5 0 A ,

VG E = 0 / 1 5 V ,rG = 7 ,

L

= 1 0 3 n H , C

= 3 9 p F

L

, C

f r o m F i g . EEnergy losses includetail and diode reverserecovery.

- 26 - ns

Rise time tr - 29 -

Turn-off delay time td ( o f f ) - 299 -

Fall time tf - 29 -

Turn-on energy Eo n - 1.2 - mJ

Turn-off energy Eo f f - 1.4 -

Total switching energy Et s - 2.6 -

Anti-Parallel Diode Characteristic

Diode reverse recovery time tr r Tj =2 5C ,

VR = 4 0 0 V , IF = 5 0 A ,

d iF/ d t= 1 2 8 0 A /s

- 143 - ns

Diode reverse recovery charge Q r r - 1.8 - C

Diode peak reverse recovery current Ir r m - 27.7 - A

Diode peak rate of fall of reverserecovery current duringtb

d ir r/d t - 671 - A/s

Switching Characteristic, Inductive Load, at Tj=175C

Parameter Symbol ConditionsValue

Unit

min. Typ. max.IGBT Characteristic

Turn-on delay time td ( o n ) Tj = 1 7 5 C ,VC C = 4 0 0 V ,IC = 5 0 A ,

VG E = 0 / 1 5 V ,rG = 7 ,

L

= 1 0 3 n H , C

= 3 9 p F

L

, C

f r o m F i g . EEnergy losses includetail and diode reverserecovery.

- 27 - ns

Rise time tr - 33 -

Turn-off delay time td ( o f f ) - 341 -

Fall time tf - 55 -

Turn-on energy Eo n - 1.8 - mJ

Turn-off energy Eo f f - 1.8 -

Total switching energy Et s - 3.6 -

Anti-Parallel Diode Characteristic

Diode reverse recovery time tr r Tj = 1 7 5 C

VR = 4 0 0 V , IF = 5 0 A ,

d iF/ d t= 1 2 8 0 A /s

- 205 - ns

Diode reverse recovery charge Q r r - 4.3 - C

Diode peak reverse recovery current Ir r m - 40.7 - A

Diode peak rate of fall of reverserecovery current duringtb

d ir r/d t - 449 - A/s


4/13



IC,

COLLECTORCURRENT

100H z 1kH z 10kH z 100kH z

0A

20 A

40 A

60 A

80 A

00 A

20 A

40 A

TC

=110C

TC

=80C

IC,

COLLECTORCURRENT

1V 10V 100V 1000V

1A

10 A

100A

10s

1m s

DC

tp=2s

50s

10ms

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function ofswitching frequency

(Tj175C,D =0.5,VCE= 400V,

VGE= 0/15V, rG= 7)

Figure 2. Safe operating area

(D =0, TC= 25C,Tj175C;VGE=0/15V)

Ptot,POWERDISSIPATION

2 5 C 5 0C 7 5C 1 00 C 1 25 C 1 50 C0W

50 W

100W

150W

200W

250W

300W

IC,

CO

LLECTORCURRENT

25C 75C 125C0A

20 A

40 A

60 A

80 A

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function ofcase temperature

(Tj175C)

Figure 4. Collector current as a function ofcase temperature

(VGE15V,Tj175C)

Ic

Ic


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IC,

COLLECTORCURRENT

0V 1V 2V 3V

0A

20A

40A

60A

80A

100A

120A

15 V

7V

9V

11V

13 V

VGE

=20V

IC,

COLLECTORCURRENT

0V 1V 2V 3V 4V

0A

20 A

40 A

60 A

80 A

100A

120A

15 V

13 V

7V

9V

11 V

VGE

=20V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic(Tj= 25C)

Figure 6. Typical output characteristic(Tj= 175C)

IC,

CO

LLECTORCURRENT

0V 2V 4V 6 V 8 V0A

20A

40A

60A

80A

25C

TJ= 175C

VCE(sat),

COLLECTO

R-EMITTSATURATIONVOLTAGE

0C 50C 100C 150C0.0V

0.5V

1.0V

1.5V

2.0V

2.5V

IC

=50A

IC

=100A

IC

=25A

VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic(VCE=10V)

Figure 8. Typical collector-emittersaturation voltage as a function ofjunction temperature(VGE= 15V)


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t,SWITCHINGTIMES

0A 20A 4 0 A 60A 80 A

10ns

100ns tr

td(on)

tf

td(off)

t,SWITCHINGTIMES

10ns

100ns

tr

td(on)

tf

td(off)

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 9. Typical switching times as afunction of collector current(inductive load,TJ=175C,VCE = 400V, VGE = 0/15V,rG = 7,Dynamic test circuit in Figure E)

Figure 10. Typical switching times as afunction of gate resistor(inductive load,TJ = 175C,VCE= 400V, VGE = 0/15V,IC = 50A,Dynamic test circuit in Figure E)

t,S

WITCHINGTIMES

2 5C 5 0C 7 5C 1 00 C 1 2 5C 1 50 C1 0 n s

1 0 0 n s

tr

td(on)

tf

td(off)

VGE(th),GATE-EMITTTRSHOLDVOLTAGE

-50C 0 C 5 0 C 1 0 0C 150 C0V

1V

2V

3V

4V

5V

6V

7V

min.

typ.

ma x.

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as afunction of junction temperature(inductive load,VCE = 400V,VGE = 0/15V,IC = 50A,rG=7,

Dynamic test circuit in Figure E)

Figure 12. Gate-emitter threshold voltage asa function of junction temperature(IC= 0.8mA)


7/13



E,

SWITCHINGENERGYLOSSES

0A 20A 40A 60A 80A0.0mJ

2.0mJ

4.0mJ

6.0mJ

8.0mJ

Ets

*

Eoff

*) Eon

and Ets

include losses

due to diode recovery

Eon

*

E,

SWITCHINGENERGYLOSSES

0.0mJ

1.0mJ

2.0mJ

3.0mJ

4.0mJ

5.0mJ

6.0mJE

ts*

Eoff

*) Eon

an d Ets

include losses


Eon

*

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 13. Typical switching energy lossesas a function of collector current(inductive load,TJ = 175C,VCE = 400V, VGE = 0/15V,rG = 7,Dynamic test circuit in Figure E)

Figure 14. Typical switching energy lossesas a function of gate resistor(inductive load,TJ = 175C,VCE = 400V, VGE = 0/15V,IC = 50A,Dynamic test circuit in Figure E)

E,

SWITC

HINGENERGYLOSSES

25C 50C 7 5C 10 0C 12 5C 1 50C0.0mJ

1.0mJ

2.0mJ

3.0mJ

Ets

*

Eoff

*) Eon

and Ets

include losses


Eon

*E

,SWITC

HINGENERGYLOSSES

300V 35 0V 4 00 V 4 50V 5 00V 55 0V0m J

1m J

2m J

3m J

4m J

Ets

*

Eon

*

*) Eon

a nd Ets

include losses


Eoff

TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy lossesas a function of junctiontemperature(inductive load,VCE = 400V,

VGE = 0/15V,IC = 50A,rG = 7,Dynamic test circuit in Figure E)

Figure 16. Typical switching energy lossesas a function of collector emittervoltage(inductive load,TJ = 175C,

VGE = 0/15V,IC = 50A,rG = 7,Dynamic test circuit in Figure E)


8/13



VGE,

GATE-EMITTERVOLTAGE

0 nC 1 0 0 n C 2 0 0n C 3 0 0 n C0 V

5 V

1 0 V

1 5 V

4 8 0 V

1 2 0 V

c,

CAPACITANCE

0V 10V 20V 30V 40V

100pF

1n F

Crss

Coss

Ciss

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge(IC=50 A)

Figure 18. Typical capacitance as a functionof collector-emitter voltage(VGE=0V,f= 1 MHz)

IC(sc),shortcircuitCOLLECTORCURRENT

12V 14V 16V 18V0A

100A

200A

300A

400A

500A

600A

700A

800A

tSC,

SHORT

CIRCUITWITHSTANDTIME

10V 11V 12V 13V 14V0 s

2 s

4 s

6 s

8 s

10s

12s

VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITETR VOLTAGE

Figure 19. Typical short circuit collectorcurrent as a function of gate-emitter voltage

(VCE400V,Tj150C)

Figure 20. Short circuit withstand time as afunction of gate-emitter voltage(VCE=400V,start at TJ=25C,TJmax


9/13



ZthJC,

TRANSIENTTHERMALIMPEDANCE

1 s 1 0 s 1 00 s 1 ms 10 ms 1 00 ms

10-2

K/ W

10-1

K/ W

single pulse

0.01

0.02

0.05

0. 1

0.2

D=0.5

ZthJC,

TRANSIENTTHERMALIMPEDANCE

1 s 1 0 s 1 00 s 1 ms 1 0m s 1 00 ms

10 -2K/ W

10-1

K/ W

single pulse

0.01

0.02

0.05

0. 1

0. 2

D=0.5

tP, PULSE WIDTH tP, PULSE WIDTH

Figure 21. IGBT transient thermalimpedance(D = tp/ T)

Figure 22. Diode transient thermalimpedance as a function of pulsewidth(D=tP/T)

trr,

REVER

SERECOVERYTIME

700A/ s 800A/ s 900A / s 1000A/ s0ns

50ns

100ns

150ns

200ns

250ns

300ns

TJ=25C

TJ=175C

Qrr,

REVERS

ERECOVERYCHARGE

7 00 A/ s 8 00 A/s 9 00 A/s 1 00 0A /s0.0C

0.5C

1.0C

1.5C

2.0C

2.5C

3.0C

3.5C

4.0C

TJ=25C

TJ=175C

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time asa function of diode current slope(VR=400V,IF=50A,

Dynamic test circuit in Figure E)

Figure 24. Typical reverse recovery chargeas a function of diode currentslope

(VR = 400V,IF = 50A,Dynamic test circuit in Figure E)

R, ( K / W ) , ( s )

0.18355 7.425*10-

0.12996 8.34*10-

0.09205 7.235*10-

0.03736 1.035*10-

0.00703 4.45*10-

C1 =1 / R1

R1 R2

C2 =2 / R2

R, ( K / W ) , ( s )

0.2441 7.037*10-

0.2007 7.312*10-

0.1673 6.431*10-

0.1879 4.79*10-

C1 =1 / R1

R1 R2

C2 =2/ R2


10/13



Irr,

REVERSERECOVERYCURRENT

7 00 A/ s 8 00 A / s 9 0 0A / s 1 00 0A / s0A

10 A

20 A

30 A

40 A

TJ=25C

TJ=175C

d

irr/

dt,DIODEPEAKRATEOFFALL

O

FREVERSERECOVERYCURRENT

7 00 A/ s 8 00 A/ s 9 00 A/ s 1 00 0A/ s0A/s

-150A/s

-300A/s

-450A/s

-600A/s

-750A/s

TJ=25C

TJ=175C

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery currentas a function of diode currentslope(VR = 400V,IF = 50A,Dynamic test circuit in Figure E)

Figure 26. Typical diode peak rate of fall ofreverse recovery current as afunction of diode current slope(VR=400V,IF=50A,Dynamic test circuit in Figure E)

IF,

FOR

WARDCURRENT

0V 1V 2V0A

20 A

40 A

60 A

80 A

00 A

20 A

175C

TJ=25C

VF,

FORWARDVOLTAGE

0C 50C 100C 150C0.0V

0.5V

1.0V

1.5V

2.0V

50 A

IF

=100A

25 A

VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 27. Typical diode forward current asa function of forward voltage

Figure 28. Typical diode forward voltage as afunction of junction temperature


11/13


12/13



Ir r m

90%Ir r m

10%Ir r m

di /dtF

tr r

IF

i,v

tQS

QF

tS

tF

VR

di /dt r r

Q =Q Qr r S F

+

t =t t r r S F

+

Figure C. Definition of diodes

switching characteristics

p(t)1 2 n

T (t)j

1

1

2

2

n

n

TC

r r

r

r

rr

Figure D. Thermal equivalentcircuit

Figure A. Definition of switching times

Figure B. Definition of switching losses


13/13


IFAG IPC TD VLS 13 R 2 6 20 09 2013

Published byInfineon Technologies AG

81726 Munich, Germany 2013 Infineon Technologies AGAll Rights Reserved.

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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or

any information regarding the application of the device, Infineon Technologies hereby disclaims any and all

warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual

property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearestInfineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on thetypes in question, please contact the nearest Infineon Technologies Office.The Infineon Technologies component described in this Data Sheet may be used in life-support devices orsystems and/or automotive, aviation and aerospace applications or systems only with the express writtenapproval of Infineon Technologies, if a failure of such components can reasonably be expected to cause thefailure of that life-support, automotive, aviation and aerospace device or system or to affect the safety oreffectiveness of that device or system. Life support devices or systems are intended to be implanted in thehuman body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonableto assume that the health of the user or other persons may be endangered.

infineon ikw50n60t ds v02 06 en

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