ima workshop on multiscale models for surface evolution and reacting flows june 5-9, 2000 taking on...
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IMA Workshop on Multiscale Models for Surface Evolution and Reacting Flows June 5-9, 2000
Taking on the Multiscale ChallengeEven Small-Scale Victories are Good
Len Borucki
Digital DNA LabMotorola, Inc.Phoenix, AZ
IMA Workshop on Multiscale Models for Surface Evolution and Reacting Flows June 5-9, 2000
Why do multiscale modeling? - Perspective from semiconductor manufacturing.
Typically, tool “knobs”control tool physics on the~0.1-1 meter scale
0.2 m
However, the goal is to controlan outcome at the micron scale orbelow over a wide area of the wafer.
0.1 m
Deposited Filmwafer
Tools are expensive, so optimizing their use is important.
T Merchant
IMA Workshop on Multiscale Models for Surface Evolution and Reacting Flows June 5-9, 2000
Several spatial scales may be involved.
Equipment or Wafer ScaleDie (Chip) Scale
Feature Scale
~1 cm
Differences in feature packing densities within a die or across a wafer may affect local feature scale uniformitydue to depletion of reactants or other effects related to feature density.
IMA Workshop on Multiscale Models for Surface Evolution and Reacting Flows June 5-9, 2000
IMA Workshop on Multiscale Models for Surface Evolution and Reacting Flows June 5-9, 2000
Starting at the atomic level, the goal of modeling may be to predict structureand properties at much larger length and time scales. There are huge gaps.
~10-10 m and ~10-12 secFilm precursors.Gas phase and surfacechemistry.
A. Korkin, N. Tanpipat
Film nucleation, growth, grainstructure and transport properties.
~10-9 - ~10-5 m and ~102 sec
VoidNucleation
C-L Liu
D. Richards
MetalLifetime
~10-4 - ~10-3 m and ~104 - ~108 sec
Electronic properties
Film thickness ~10-9-~10-8 m
IMA Workshop on Multiscale Models for Surface Evolution and Reacting Flows June 5-9, 2000
Challenge: Film Nucleation, Growth
Source: J. Zhang, J. Adams, Arizona State UniversitySee http://ceaspub.eas.asu.edu/cms/
Facet growth during physical vapordeposition with surface diffusion. KLMC.
Activation energies for diffusion along andbetween facets. Embedded atom method.
Grain Nucleation (FCC nuclei with {100}, {111} or {110} facets, randomly rotated and cut)
Grain growthfor an isotropicor unidirectionalsource. Stringalgorithm, not alevel set method.
Isotropic Source
IMA Workshop on Multiscale Models for Surface Evolution and Reacting Flows June 5-9, 2000
Challenge: Calculation of properties of polycrystalline structures.
IMA Workshop on Multiscale Models for Surface Evolution and Reacting Flows June 5-9, 2000
Calculating transport properties of large polycrystalline structures - an example.
tf = e−βv
D(v)dv
0
1
where β = l /l c
D
Aj
x
Di =Dg +m?(δ /W) ? Dgb?sin(ϑ j / 2) ?cos(Aj)( )j=1
Ngbi
Tilt AngleW=Line Width
δ = Grain Boundary Width
This very simplemodel produces afairly convincingstatistical failuretime distribution.
IMA Workshop on Multiscale Models for Surface Evolution and Reacting Flows June 5-9, 2000IMA Workshop on Multiscale Models for Surface Evolution and Reacting Flows June 5-9, 2000
Joule Heating in a Snake
IMA Workshop on Multiscale Models for Surface Evolution and Reacting Flows June 5-9, 2000
A Different Reacting Flow Multiscale Problem: Chemical-Mechanical Polishing
Figure 1: Idealized model of a single wafer CMP tool. The polishing platen,wafer carrier, and conditioning tool rotate at independent rates while the carrierand conditioner oscillate radially over the pad surface. A thin, elastic carrier film(not shown) is sometimes used between the wafer and wafer carrier. A soft pad(Suba pad) may also be inserted between the polishing pad and the platen.
ωP
Table (Platen)
Pad
Slurry
Wafer
Wafer Carrier
ωw
Force Fw
d (t)w
rw
d (t)c
Conditioner
rc
Force Fcωc
A chemically reactive slurrycontaining ~0.1 m particles is sprayed on a rotatingpolyurethane pad in front ofa rotating wafer. The slurryattacks the surface layer on thewafer, allowing the particlesto more easily abrade andsmooth the layer.
IMA Workshop on Multiscale Models for Surface Evolution and Reacting Flows June 5-9, 2000
The polyurethane pad containsnumerous voids averaging ~30microns in diameter.
Voids exposed at the surface fill with slurry. The slurrylayer is very thin in highly compressed areas betweenthe voids. Slurry particles probably contact the waferin these compressed regions.
Chemical-Mechanical Polishing
IMA Workshop on Multiscale Models for Surface Evolution and Reacting Flows June 5-9, 2000
Somehow, this surface structure plays arole in the details of the development ofsuction fluid pressure under the wafer.
The suction pressure may in turn affect theuniformity of the removal rate on the waferscale.
Shan, Georgia Tech
Chemical-Mechanical Polishing
Question: How to describe the pad surface and utilize the information in a model with alonger length scale; eg. the Reynolds equation?
IMA Workshop on Multiscale Models for Surface Evolution and Reacting Flows June 5-9, 2000
Summary
Multiscale models either Start at equipment scale and connect with the feature scale. Start at the atomic level and progress toward longer length and time scales.
Very significant gaps exist, for example, Modeling of nucleation and growth of polycrystalline films, particularly in 3D and with topography. Prediction of properties of polycrystalline materials. Better mathematical and numerical methods.