igct training
DESCRIPTION
It is a presentation from which easy IGCT can be understandTRANSCRIPT
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IGCT TrainingRené Ernst
Sales Engineer
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Contents
Principle of operation Basic Topologies Design criteria for VSI VSI clamp circuit design Applying IGCT gate unit Series connection
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Introduction to IGCTs
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Electronic Switches
Thyristor Can be turned on by gate signal but can only be turned off by
reversal of the anode current
Gate Turn-Off Thyristor (GTO) Can be turned on and off by the gate signal but requires large
capacitor (snubber) across device to limit dv/dt
Transistors (transitional resistor)
Can be turned on and off by the gate (or base) signal but has high conduction losses (its an amplifier, not a switch)
Integrated Gate Commutated Thyristor (IGCT) Can be turned on and off by the gate signal, has low conduction
loss and requires no dv/dt snubber
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IGCT model
Two-transistor “Regenerative Switch” model of a GTO
KCATHODE
GATE
ANODE A A
K
GG
Ia
Ik
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Principle of IGCT Operation
P
N
P
N
Anode
Cathode
Gate
IAK
IGK
P
N
P
N
Anode
Cathode
Gate
- VGK
VAK
Conducting Thyristor Blocking Transistor
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Hard Turn-off mode
anode current
gate current
UGK
tcomm
tdesat
UAK
UAK, IA, IG
t
UGK
t
Snubber less operation => tdsat > 0
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IGCT Turn-off
4
1
Ia (kA)
Vdm
Tj = 90°C
Itgq
4
3
2
1
0
-10
-20
Vg (V)
2
3
0
anode voltage Vd
anode current Ia
gate voltage Vg
thyristor transistorx
starts to block
Vd (kV)
2015 3025 35 ts)
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Thermal distribution
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IGCT = GTO + IGBT?
GTO’s low cost device
high reliability
IGBT’s low cost circuit
fast switching
IGCT’s lowest cost device
lowest cost circuit
highest reliability
fastest switching
IGCT’s lowest cost device
lowest cost circuit
highest reliability
fastest switching
highest efficiency highest efficiency
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Turn off capability GTO <=> IGCT
7
0
12
34
56
0 1 2 3 4 5 6Snubber Capacitance (uF)
Tur
n-of
f C
apab
il ity
(k A
) IGCT (5SHY
35L4512)
GTO (5SGF
40L4502)
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Basic Topologies
VR
S3
S4
S5
S6
S1
S2
Ls
L
Cclamp
Dclamp
R
FWD
6
Clamp Network
S5S3S1
S6S2 S4
VDC
FWD1
IGCT Inverter
IGBT Inverter
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GTO, IGBT and IGCT phase-legs
IGBT
GTO
IGCTSchematics
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Application Specific Asymmertric IGCT
10
12
14
16
18
20
22
24
26
28
30
1.50 1.70 1.90 2.10 2.30 2.50 2.70 2.90 3.10 3.30 3.50
VT @ 3.3kA, 125°C [V]
Eo
ff @
2.8
kV, 3
.3kA
, 125
°C [W
s] homogeneous lifetime engineering
local lifetime engineering12
10
11
Technology curves of asymmetric 4 kA / 4.5 kV IGCT's
Type 12: Low on-state lossesType 10: Low total lossesType 11: Low switching losses
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Overview 4.5 kV asymmetric IGCT
Type low on-statelosses
(Type 12)
low total losses(Type 10)
low switching losses(Type 11)
Part N° 5SHY 35L4512 5SHY 35L4510 5SHY 35L4511
Junction temp.range
-40°C – 125°C -40°C – 125°C 10°C – 125°C
VTM @ 4 kA, 125°C 2V 2.7 V 3.5 V
EOFF @ 4 kA, 2.8 kV,125°C
37 Ws 22 Ws 17 Ws
Typical application AC/DC breakers(SSB)
Traction,Energy Management
High FrequencyMVDs
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-3000
-2000
-1000
0
1000
2000
3000
4000
5000
-0.5 0 0.5 1 1.5 2 2.5 3
t [s]
UA
K, I
A [V
, A]
-3.00E+01
-2.00E+01
-1.00E+01
0.00E+00
1.00E+01
2.00E+01
3.00E+01
4.00E+01
5.00E+01
UG
K [a
.u.]
Tj= 25°C
Tj = 125°C
UAK (25°C) UAK (125°C)
UGK
n
n
p
p
n
n
p
p
n
n
p
pn
n
p
p
t(25°C)
t(125°C)
Snubberless Operation
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Turn-off waferforms at different temperatures
0
1000
2000
3000
4000
8 9 10 11
t [s]
UA
K,
I A,
[V,
A]
Tj = 125°C
Tj = 75°C
Tj = 25°C
UAK
IA
IGCT type 5SHY 35L4511
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Turn-off waferforms @ Tj = 125°C
0
1000
2000
3000
4000
6 8 10 12 14
t [s]
I A,
UA
K,
[A,
V]
4510
4511
4512
IA
UAK
Signifficant reduction of tail current
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Turn-off waveforms = f(Tj)
0
1
2
3
4
5
kV
0
1
2
3
4
5
kA
40 60 80 100µs
ITGQ = 3200 A
VDM = 3470 V
VDC = 2800 V
0
1
2
3
4
5
kV
0
1
2
3
4
5
kA
40 60 80 100µs
VDM = 4280 V
ITG Q = 3250 A
VDC = 2800 V
5SHY 35L4510 @ Tj = -40°C
5SHY 35L4510 @ Tj = 125°C
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Simple GCT Construction
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VSI Test Circuit
LCLL i
RsDUT
LLoad
CCLVLC
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VSI test circuit waveforms
CS CS
IT
VDSP
VDM
VD
VG
tdon
IT
ITM
di/dt
0.9 VD
0.1 VD
VD
Turn-on Turn-off
VG
tr
tdoff
tdon1
SF
SF
0.4 ITGQ
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VSI test circuit parameters
Design these parameters to IGCT and diode capability: Stray inductance, LCL
di/dt limiting inductor, LI
Clamping capacitor, CCL
Clamping resistor, RS
These parameters are normally given by converter system design and does not normally influence IGCT performance or design: DC link capacitor, CDC
Load inductor, LLOAD
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Design criterions for di/dt limiting inductor
Component di/dt capability (SOA) IGCT Diode
Maximum surge current capability determined by LI and CDC
Diode switching losses Losses increase when LI value reduce
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Component di/dt capability
GCT di/dt capability: very high (compared to GTO) due to hard driven principle. very high turn-on pulse di/dt ( >500A/us) ensures
homogeneous, robust and “lossless” turn-on. More than 3000A/us has been applied in application.
Diode di/dt capability: Mostly the limiting part in IGCT VSI design This is especially true for snubberless applications which has
become standard in the market. Typical values are between 200 and 1000 A/us dependent on
wafer size and maximum required switching voltage.
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di/dt limiting inductor value
In VSI topologies, the diode turn-off di/dt capability mostly determines the size of the di/dt choke.
Li > (Vdc/(di/dtmax))
A bigger inductor value might be chosen in order to limit switching losses of the diode or to limit the surge current stress during shoot-through in a phase leg.
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Stray inductance design
The stray inductance, LCL, significantly influence
IGCT turn-off SOA and losses
Diode turn-off SOA and losses
Diode snap behaviour at low turn-off currents
Snap overvoltage
Noise emission due to high frequency oscillations
If LCL data sheet values are exceeded, SOA and specified turn-off losses are not valid.
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Turn-off losses versus stray inductance
V300 V800 V1500 I_300 I_800 I_1500
0
1
2
3
4
kV
0
1
2
3
kA
2 4 6 8 10 12 14
µs
Variation der Clampinduktivität: 300nH / 800nH / 1500nH
Testbedingungen:
Tj= 125°CITGQ= 3000AEl. Typ= 5SGY35L 4510 allg. Bedingungen: Vzk = 2kV
Ls = 3.7µHLs2 = 1.5µHRs = 0.5 OhmCcl = 7.6 µFDcl, Df = 5SDF10H4502
V300 V800 V1500 I_300 I_800 I_1500P300 P800 P1500 e300 e800 e1500
0.00
0.75
1.50
2.25
3.00
3.75
4.50kV
0.0
0.5
1.0
1.5
2.0
2.5
3.0kA
0
2
4
6
8
10
12MW
0
4
8
12
16
20
24J
5 10 15
µs
Eoff = f(Ls) Clampinduktivität: 300nH / 800nH / 1500nH
Testbedingungen:
Tj= 125°CITGQ= 3000AEl. Typ= 5SGY35L 4510 allg. Bedingungen: Vzk = 2kV
Ls = 3.7µHLs2 = 1.5µHRs = 0.5 OhmCcl = 7.6 µFDcl, Df = 5SDF10H4502
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The RLC clamp circuit
Analysis of damped parallel resonance circuit comprising LI, CCL and RS allows for an initial determination of CDC and RS values.
This analysis yield a reasonably good result when
CDC >> CCL
Stray inductances are small (LS1, LS2)
LLOAD >> LI
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VSI test circuit again - more details
Czk
Ls
Ls2
Uzk
Dcl
PrüflingRs
Ls1
Ccl
GCT
DQ
Last
Prüfling
Diode
I
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RLC circuit - 2. Order differential equation
Differential equation: LI CCL * (diL/dt)2 + (LI / RS) * (diL/dt) + iL = 0 (1)
Damping factor:
D = ( LI / CCL)/(2RS) ½ D 0.8 (2)
Clamping capacitor:
CCL > (LI *D4*IL)/(K1*ΔVCL) K1 0.9 (3)
Damping resistor:
Rs = ( Li / Ccl)/(2D) ½ (4)
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RLC circuit - why damping resistor?
To allow clamping capacitor to discharge before next switching transition (switching overvoltages does not add up to exceed component ratings).
Limit switching voltage overshoot VDM
Prevent current flowing in clamping diode after switching transition due to additional oscillations in RLC circuit (slightly undercritical damping - see formula 2)
Value obtianed with formula (4)
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RLC circuit - the clamping capacitor
Value obtained through formula (3) where
CCL > (LI *D4*IL)/(K1*ΔVCL) K1 0.9 (3)
D is damping factor (formula (2))
IL < ITGQM - maximum turn-off current of the application which has to be lower than maximum controllable turn-off current of the device according to specification
ΔVCL = VDM - VDCMAX which is the difference between the maximum allowed peak voltage and the maximum required dc link voltage of the application
K1 - this factors accounts for the influence of the stray inductance, LS2, which is never zero although kept as low as possible
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Block diagram - AC input
Tx
LogicMonitoring
Turn-Off
Circuit
Turn-On
Circuit
20VDC
Status Feedback(Light)
Gate
Kathode
24 ... 40VAC
or24 ... 40VDC
Rx
Command Signal(Light)
Internal Supply
LEDs
Stabilizer
Supply
AnodeMonitoring
Anode
For IGCT part numbers:
AS-IGCT: 5SHY 35L451x
RB-IGCT: 5SHZ 08F6000
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Power up - AC input AC input: Inrush current of about 9 A flows during about 150 ms.
Gate drive has current limiter on the board.
DC input: Gate drive does not provide inrush current limitation
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Isolation interface
The isolation requirements appears as a function of the maximum applied voltage of the specific application
Also the supplied power to the gate drive varies from project to project
Consequently isolation transformer is difficult to standardize
Gate drive has no onboard isolation transformer!
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Optical interface - receiver
Receiver for command signal Agilent, Type HFBR-2528
Pon CS Optical input power > -21 dBm Valid for 1mm plastic optical fibre (POF)
Poff CS Optical noise power < -40 dBm
tGLITCH Pulse width threshold 400 ns Max. pulse width without response
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Optical interface - transmitter
Transmitter for status feedback Agilent, Type HFBR-1528
Pon SF Optical output power > -19 dBm
Poff SF Optical noise power < -50 dBm
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Turn-on circuitry
V1
V2
D 1L1
D 3
K
G
C
20V
0V
V 3
D 2
L2
Turn on delay time: 2.75 - 2.85 us Less than 100 ns spread of delay
time
CH4: Command signal (HIGH: light)CH2: Turn-on currentCH1: VGK
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Turn-off circuit
V6
K
G
C
20V
0V
O FF
Turn off delay time: 2.75 - 2.85 us
Less than 100 ns spread of delay time
CH4: Command signal (HIGH: light)
CH1: VGK
CH2: On-state current [20 A/Div]
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On-state: Back-porch current circuit
V4
C
20V
0V
K
G
L3
L4C 1 V5
G H K
CH4: Command signal (HIGH: light)
CH2: Back porch current [5 A/Div]
Chopper in current control mode
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On-state: Re-triggering (external)
CH4: Command signal (HIGH: light)
CH1: VGK
CH2: Turn-on current 50 A/Div
Re-firing of turn-on pulse can be commanded via command input
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On-state: Re-triggering (internal)
CH1: VGK
CH2: Turn-on current [50 A/Div]
Gate voltage detection also controls re-triggering of turn-on pulse
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Power consumption (1): transferred power
Ptransfer = Vgint* Qgq(Itgq)*fs
Vgin : internal regulated voltage
Qgq(Itgq) : charge transferred to the power circuit
fs : switching frequency
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
80.0
90.0
100.0
0 200 400 600 800 1'000 1'200 1'400
Itgq [A]
Pg
q [
W]
50Hz
500 Hz
1000 Hz
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Power consumption (2): dissipated power
05
101520253035
0 200 400 600 800 1000
Switching frequency [Hz]
po
wer
[W
]
0.1
0.5
1
duty cycle:
Standby
Turn-on pulse
Back porch current
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Thermal management
Calculated lifetime of on-board capacitors 20 years. With slightly forced air cooling (air velocity > 0.5 m/s). Strong air cooling allows for increased ambient temperature.
0
500
1000
1500
2000
2500
3000
250 350 450 550 650 750 850 950
FS [Hz]
ITGQ(AVG) [A]
Tamb(max) = 40 °C
Tamb(max) = 50 °CLimits for full lifetime operation for 5SHY 35L4510
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Diagnostics: Status feedbackO
pti
cal
Co
mm
and
Sig
nal
Inp
ut
Gat
e to
cath
od
evo
ltag
e
Su
pp
lyvo
ltag
e
Op
tica
lS
tatu
sF
eed
bac
ko
utp
ut
Gat
e d
rive
stat
us
LE
Ds
CS Status GK Status VGint SF
HIGH ON OK Inverse input signalCS
OK Power OK, Gate ON
HIGH OFF
(toff <10us)
OK Inverse input signalCS
OK Power OK, Gate ON
HIGH OFF
(toff >10us)
Don’t care CS FAIL Power OK, Fault
HIGH Don’t care FAIL CS FAIL Fault
LOW OFF OK Inverse input signalCS
OK Power OK, Gate OFF
LOW ON Don’t care CS FAIL Power OK, Gate ON, Fault
LOW Don’t care FAIL CS FAIL Gate OFF, Fault
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Diagnistics: Fault conditions
Loss of power supply On state hold-up time (no switching): >300 ms Off state hold-up time (no switching): >500 ms
Open circuit gate Supply overvoltage Short circuit gate
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Diagnostics: LED display
Pow
er O
K (
Gre
en)
Fau
lt (R
ed)
Gat
e O
N (
Yel
low
)
Gat
e O
ff (G
reen
)
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EMI testing: dv/dt stress
Amplitude: 3 kV
dv/dt: 13 kV/us
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EMI testing: di/dt stress
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EMI testing: di/dt stress
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Vibration compliance: Test set-up
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Vibration compliance: Test parameters
IGCT meets IEC standard IEC 61373
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Series connection with RC-snubber (1)
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Series Connection with RC-snubber (2)
Design Trade-offs for RC-snubber
Dynamic turn-off voltage deviation: doffTGQ tICs
V 1
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