Design and analysis of vlsi

architecture using ambipolar

MISFETs

Presented by

Anjali Ashok K A

M.E. VLSI Design

VSB Engineering College

Karur

ABSTRACT

Organic and inorganic thin film

based transistor plays a major role

in future generation electronic

devices

Self-assembled monolayer organic

dielectric material Trichloro

(Octadecyl) Silane (TOS)

High- κ inorganic dielectric material

Zirconium dioxide(ZrO2)

Cont.

Silver (Ag) as the metal at the top of

the device as Source and Drain,

pursued by the stack of TOS and

ZrO2 as the Insulator

Ambipolar operation

Reduced power consumption

INTRODUCTION

Emergence of MOS technology

Difficulty in SiO2 gate oxide scaling

High dielectric-constant introduced

ZrO2

high dielectric constant

low leakage current

BLOCK DIAGRAM

sol-gel technique - Zirconium (IV)

Prop oxide (2mL) in proper

proportion with Iso Propyl Alcohol

(9mL).

Acetyl acetone in Iso Propyl

Alcohol was used as a gelatine

agent.

Zirconia coated onto the glass plate

Poly ethylene terephthalate –to

reduce adhesion

STRUCTURE OF

TRANSISTOR

EXPERIMENTAL

ARRANGEMENT OF

LAYERS

STRUCTURE OF DRAM

CELL

IV CHARACTERISTICS OF

STACKED TFT

IV CHARACTERISTICS

SEM IMAGE OF ORGANIC

POLYMER

SEM IMAGE OF NANO

ZIRCONIA

CONCLUSION

THANK YOU