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    Analog Integrated Circuits and Signal Processing, 47, 225228, 2006c 2006 Springer Science + Business Media, Inc. Manufactured in The Netherlands.

    DOI: 10.1007/s10470-006-4959-1

    High-Gain Class-AB OTA with Low Quiescent Current

    JEONGJIN ROH

    Department of Electrical Engineering and Computer Science, Hanyang University, Ansan, Korea

    E-mail: [email protected]

    Received May 31, 2005; Revised September 7, 2005; Accepted September 12, 2005

    Published online:27 February 2006

    Abstract. High-performance operational transconductance amplifier (OTA) is designed for switched-capacitor applications.

    Without using a cascoded output stage, which limits the voltage swing, the output resistance is significantly increased for

    high DC gain by accurately controlling the output current. Also, the output stage has class-AB operation, so the overall

    power efficiency is improved. With significantly low quiescent current, the presented new OTA achieves higher DC gain than

    conventional OTAs. Theoretical analysis and HSPICE simulations prove the performance of the new OTA.

    Key Words: operational transconductance amplifier, OTA, transconductance, slew rate

    1. Introduction

    High-performance operational transconductance amplifiers

    (OTAs) are an essential building block in switched-capacitor

    circuits such as analog filters and oversampled delta-sigma

    data converters. For successful operation of systems, OTAs

    have to meet several requirements such as large bandwidth,

    high gain, high slew rate, and low quiescent current.

    The conventional current mirror OTA in Fig. 1 and its

    variants [13]have been popular because of its single-pole

    characteristic and wide output voltage swing. The alphabetsunder NMOS transistors in Figs. 1 and 2 represent their

    respective width and length ratios. The transconductance

    and the output resistance of the OTA are

    Gm = gm1,2 A

    B=

    It

    VOD

    A

    B(1)

    Rout = (ro6 || ro8) =

    1

    6Io,Q||

    1

    8Io,Q

    =2

    (6 + 8)It

    B

    A(2)

    where It is the tail current, VOD is the overdrive voltage,

    which equals VGS VTH, is the channel length modula-

    tion coefficient, and Io,Q is the drain current of the output

    transistors in quiescent state. The DC gain of the current

    mirror OTA is

    Av = Gm Rout =2

    VOD

    1

    6 + 8(3)

    The DC gain is not sufficiently high for most switched-

    capacitor circuit applications. From (3), it is apparent that

    controlling current does not affect the gain of the amplifier

    if the overdrive voltage remains constant. One possibility

    for higher gain seems to decrease the overdrive voltage.

    In general, however, the overdrive voltage should be larger

    than 150 mV for transistors to remain in saturation region.

    Further decrease of the overdrive voltage may cause the

    transistor to enter a weak inversion region. Therefore, it is

    common to set the overdrive voltage constant, and increase

    the width of the transistor at the same scale with the cur-

    rent change. Another possibility is to increase the length

    of the transistor to decrease the channel length modulationcoefficients. However, there would be a practical limit in in-

    creasing transistor sizes. A common practice for high gain

    is to use a cascoded output stage [1]. However, cascoding

    limits the output swing of an amplifier, so it cannot be a

    general solution.

    In addition to the problem of low DC gain, the current

    mirror OTA in Fig.1 has limited maximum output current

    Io,max, and as a result, low slew rate such as

    SR =Io,max

    Cload=

    It AB

    Cload(4)

    where Cload is a load capacitance. If the tail current

    It or the current mirror ratio A/B is increased for

    higher slew rate, it will also increase the quiescent cur-

    rent. Since battery-operated portable systems are gain-

    ing popularity, higher quiescent current cannot be tol-

    erated in such portable systems. In this letter, we de-

    sign a new OTA, which achieves sufficient high gain

    with small quiescent current with a single-pole frequency

    characteristic.

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    226 Roh

    Fig. 1. Conventional OTA.

    2. High-Performance OTA Design

    In order to achieve high DC gain, we need to increase Rout.

    As mentioned earlier, however, cascoding limits output volt-

    age swing, so it is avoided in our design. A solution to in-

    crease the output resistance is to reduce the current in the

    output stage as shown in (2). However, reducing the output

    current in the conventional OTA proportionally reducesGm,

    so the overall gain does not change. Also reducing output

    current directly contradicts to the requirement of high slew

    rate.

    Our solution is to reduce the quiescent current of the

    output stage, and add an extra control circuit to increase

    the output current during large signal operation. The new

    OTA in Fig. 2 has two voltage controlled current sources,which are M9 and M10. In quiescent condition, significant

    portion of the drain current of M2 now flows into the cur-

    rent source M10, as a result reducing the output current.

    Transistors M11M14 sense the input differential voltage

    and control two voltage controlled current sources, M9 and

    M10. If the current through M2 increases bygm2 Vin/2,

    the current through M10 decreases bygm11 Vin/2C/D,

    Fig. 2. New high-gain OTA.

    where Vin = Vp Vn . The amount of current reduction

    in M10 equals the extra amount of current increase in M4.

    Therefore, the total current change in M4 is the sum of the

    changes in M2 and M10. In order to have same overdrive

    voltage, we can assume that, without loss of generality, the

    transistor M2 has the size ofB + C and M12 has the size

    ofD. Then the combined total transconductance of the new

    OTA in Fig.2is

    G m ,new =B + C

    B + C + D gm,in

    A

    B+

    D

    B + C + D

    gm,in C

    D

    A

    B

    = gm,in A

    B+

    B + 2C

    B + C + D(5)

    where the transconductancegm,inis the total input transcon-

    ductancegm1,2 + gm11,12, which equals the input transcon-

    ductancegm1,2 in (1). Also, the quiescent output current is

    Fig. 3. HSPICE plot of the conventional OTA.

    Fig. 4. HSPICE plot of the new high-gain OTA.

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    High-Gain Class-AB OTA with Low Quiescent Current 227

    reduced as

    Io,Q =It

    2

    B

    B + C + D

    A

    B=

    It

    2

    A

    B + C + D(6)

    As a result, the output resistance is increased as

    Rout = (ro6 ro8) =2

    (6 + 8)It

    B + C + D

    A(7)

    Since both Gm and Rout are increased, the overall gain

    increase in the new OTA is significant. One drawback of the

    new OTA is the creation of an extra non-dominant pole. The

    diode-connect transistors M13 and M14 create extra pole,

    so the overall frequency response should be carefully exam-

    ined. However, since the small-signal resistance at the drain

    of M13 or M14 is small, the extra pole at that node locates

    at high frequency. Therefore, it does not significantly affect

    the frequency response, especially if the load capacitor is

    large.

    Important OTA parameters are summarized in

    Table1 for both conventional and new OTAs. We can see

    that the new OTA has advantages in Gm, output resistance,

    and quiescent output current, while the maximum output

    current of the new OTA may look slightly worse than the

    conventional one. For a fair comparison of performance, we

    need to clarify the slew rate issue. The available maximum

    output current of the new OTA is slightly worse than that

    of the conventional one in Table1because we significantly

    reduced the quiescent current of the new OTA. If higher

    slew rate is desired, the quiescent current of the new OTAcan be increased, but still less than the conventional one.

    From another point of view, if we design both OTAs to have

    same quiescent currents, the new OTA is going to have sig-

    nificantly higher slew rate. A reasonable design decision

    should be made for the new OTA by selecting appropri-

    ate values for a lower quiescent current and a higher slew

    rate.

    3. Simulation Results

    The HSPICE simulation results are shown in this sectionwith 0.35 m standard CMOS process parameters. Both

    conventional and new OTAs are designed to have same

    200A tail current, while the quiescent output current to

    be 400 and 40 A, respectively. The values ofA and B in

    the conventional OTA are 4 and 1, respectively, while the

    values ofA, B, C, and D in the new OTA are 4, 1, 8, and

    1, respectively. The transistors all have the same length of

    1m, and the widths are decided to have overdrive voltage

    of about 200 mV. The simulation results in Table 1 show that

    the currents are slightly less than the initial design target.

    These errors are caused by the channel length modulation

    of the current mirrors in both designs. The quiescent output

    current is significantly reduced for the new OTA and the

    maximum output current is only slightly less than that of

    the conventional one. As mentioned earlier, if higher slew

    rate is desired, the tail current or the value ofA in the new

    OTA can be increased. In other words, if we implement

    the same quiescent current for both OTAs, the slew rate of

    the new OTA is significantly higher than the conventional

    one.

    Figures3and4show the frequency responses of the con-

    ventional and the new OTAs with a 10 pF load capacitor,

    respectively. The DC gain of the new OTA is significantly

    increased from 40 to 62 dB. The unity-gain frequency of the

    conventional one is 43 MHz with 81

    phase margin, whilethe new OTA has 46 MHz with 64 phase margin. The effect

    of non-dominant poles decreases the phase margin of the

    new OTA, but still a sufficient phase margin is achieved.

    Step response of the new OTA is shown in Fig. 5 to con-

    firm the stable operation of the circuit. Simulation result

    Table 1 . Performance comparison (A = 4,B = 1,C = 8,D = 1,It= 194A,CL = 10 pF,VCC= 3 V).

    Conventional OTA New OTA

    Equation Simulation result Equation Simulation result

    Transconductance,Gm gm,in A

    B2.6 mA/V gm,in

    A

    B

    B + 2C

    B + C + D3.6 mA/V

    Output Resistance,Rout2

    (6 + 8)It

    B

    A37.6 k

    2

    (6 + 8)It

    B + C + D

    A361.5 k

    DC gain,Av2

    VOD

    1

    6 + 840 dB

    2

    VOD

    1

    6 + 8

    B + C

    B62 dB

    Quiescent output current,

    Io,Q

    It

    2

    A

    B392.6A

    It

    2

    A

    B + C + D39.3A

    Total OTA quiescent

    current

    It+ 2 Io,Q 979A It+ 2 Io,Q 273A

    Max output current,Io,max ItA

    B785A It

    A

    B

    B + C

    B + C + D708A

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    228 Roh

    Fig. 5. Step response of the new high-gain OTA.

    shows slight overshoot as we can expect it for 64 phase

    margin [1].

    4. Conclusions

    High-performance OTA architecture with single-pole char-

    acteristic is presented in this letter. Instead of using cas-

    coded output stage, the presented OTA achieves high

    DC gain by accurately controlling the output current.

    The output stage is designed as a class-AB circuit,

    so that the quiescent current is low with high out-

    put resistance, while the output current increases as

    required.

    Acknowledgment

    This work was supported by IT-SoC project of the Ministry

    of Information and Communication, Korea.

    References

    1. P.E. Allen and D.R. Holberg,CMOS Analog Circuit Design, 2nd edn.,

    Oxford University Press, 2002.

    2. L. Yao, M. Steyaert, and W. Sansen, A 0.8 v, 8-W, CMOS OTA

    with 50-dB gain and 1.2-MHz GBW in 18-pF load.In Proc. European

    Solid-State Circuit Conf., Estoril, Portugal, 2003, pp. 297300.

    3. R. Harjani, R. Heineke and F. Wang, An integrated low-voltage class

    AB CMOS OTA. IEEE J. of Solid-State Circuits, vol. 34, no. 2, pp.

    134141, 1999.