high-bandwidth memory (hbm2e+) 4g i/o design …
TRANSCRIPT
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High-Bandwidth Memory (HBM2E+) 4G I/O Design Techniques for 7nm Technology & Below August 22, 2019
Santosh Narawade, IP Engineering Manager
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• HPC Market and Trends
• Introduction: HBM2E
• System Architecture
• Challenges & Problem Statement
• Solution
• Next Gen HBM
• Summary
Agenda
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IP Subsystem Requirement
HBM: Need of the Market Driving Next-Gen HPC Applications
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• Increase in Cores, BW and Data: Driving New Silicon Markets– Deep Learning and Networking Applications
ASIC Market Requirements & HBM Solution
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• High-Bandwidth Memory with High-Bandwidth Memory Interface
• 2.5D System in Package
• High-Speed SerDes IP Sub-System
– Enables Ultra High Port Density for Switching and Routing Applications
– High Speed Inter-node Connectivity for Deep Learning and Networking Applications
HBM Sub-System
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• Increase Threshold Voltages (Vt)
• Complex DRC Rules
• Restricted Leakage Power
• Speeds follow Moore Law; Process Node doesn't
• New Design methodologies (for 7nm and below)
• Physical Design of Large (>10 mm2) & High-Speed ASIC
• Power (IP and system level) and Timing closure
• Thermal Sign off
• Multiple Handshake IP
• Increasing Fab Cost
• Zero Tolerance: Time2Market
Problem Statement- HBM2E+ (4G IO Design)
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Quantity 16nm 28nm Comparison
Min Metal Stack Offered 7M 5M
Signal Routing Layer Pitches P64, P80, P126 P100, P200 Misalignment Issues
Track Availability (# per um) 12.5 10 25%
Site Density (# per um2) 19.3 8.2 135%
NAND D1 Pin Density 14.5 8 81%
Track Density is not increasing at the same rate as Pin Density when we scale down to a lower node. More routing layer required.
Implementation Challenges: HBM2 2.5D SiP
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Design Solution
Circuit Design:
• Max out Initial Condition Usage
• Avoid Large Loading
• Plan Symmetry of Delays, Gates, Placement, Power Rail, Usage
DFM Techniques:
• Plan for worst Failures to avoid Mask Cost
• Touch better than Plan Schedule
Test Structure:
• Keep Sufficient Test debugs
• Avoid Last minute changes
Static Timing:
• Minimum Path Delays
• Avoid feedback points
DFT:
• Systematic full-chip partitioning and core wrappers
• Hierarchical test points, BIST/scan, compression, memory repair, power aware ATPG and enablement of wafer probing
Modelling:
• Model wherever possible
• Make Ordinal Failure Classes
Significant Increase in #PVT Corners
“Architecture” - ”DFM Checks” - “SI-PI” - “Test Plan” -“Design Signoff”
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Selection of Accurate Design Flow
Functional Spec
Architecture Define
Schematic Design
Layout Design
Post Layout RC Extraction & Simln. Is it Meeting Spec?
Signoff Checks
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Structure Alignment
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• The models can be generated for three different corner conditions: typical, minimum, and maximum. In a typical model, the data will be obtained for nominal supply voltage, nominal temperature, and nominal process parameters; in a minimum model, the data will be obtained with the lowest supply voltage, high temperature, and weak process parameters; and for a maximum model, the conditions will be the highest supply voltage, low temperature, and strong process parameters.
• Each of these conditions leads to typical, slow, and fast models. A fast model is created by considering the highest current values with the fast transition time and the minimum package characteristics. On the other hand, the lowest current values with a slow transition time and maximum package values will produce a slow model.
I/O Modeling Solution
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HBM2E+ 4Gbps I/O Eye-Diagram
Zoom
Version
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HBM2E+ 4Gbps I/O: Simulation Results
I/O Delay Diagram I/O rfmm Diagram
I/O Periodic Jitter Diagram I/O Duty Cycle Diagram
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IP Test Architecture
SiFive’s HBM2E IP Test Architecture
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•IO LIBRARY Simulations•PVT Simulations including skewed corners•Monte Carlo Simulations•Reliability Check•ERC Check•Timing .lib Generation•BMOD Check if any•AMS Simulations•Post Layout Simulations•ESD Checks if any•CDM Checks•Layout Routing Review•IR Drops/EM Checks•EOS/Burnin/Aging Sims•Padcap Checks•Decap Checks•Power Checks•Leakage Checks•Jitter Checks•SI DCD Checks•Hysterisis Checks•Skew Checks
Target Checklist
Cell name Usage commentHBM_DATAIO Single ended IO (DQ & CMD/ADDR) Horizontal & vertical poly oriented cells
HBM_CLK_INPUT Differential Input ( RDQS ) Horizontal & vertical poly oriented cellsHBM_CLK_OUTPUT Differential Output ( CLK & WDQS ) Horizontal & vertical poly oriented cells
HBM_REFGEN VREF pad Distributed by abutment. Horizontal & vertical
poly oriented cellsHBM_VDD Core VDD cell Distributed by abutment . Horizontal & vertical
poly oriented cellsHBM_PVT
COMPENSATION
For PVT compensation within the DIE-DIE
area.
Distributed by abutment. Horizontal & vertical
poly oriented cellsHBM_VDDIO IO Power Distributed by abutment.
HBM_VSS Core Ground Distributed by abutmentHBM_VSSIO IO Ground Distributed by abutment
HBM_DECAP VDDQ-VSSQ decoupling cap cell To provide better decap
Cell list for the DIE-DIE IO LIBRARY
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Top Level Solution
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Phase Wise Solution
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Next Generation HBM2E+ IP Subsystem
Supports up to 4Gbps/Pin data rates and beyond
Supports up to 8 channels (16 pseudo channels)
Support up to >400GBytes of total Bandwidth
Supports full DFI4.0 compliant controller and PHY interface
Supports multi-port AXI interface
Supports different schemes of arbitration and scheduling (QoS)
Supports different address mapping modes
AXI (Advanced eXtensible Interface) based HBM2E+ IP subsystem
development
Targeting 4Gbps per-pin data rates, and beyond, in TSMC’s latest
FinFet technologies
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• Challenges for Designing HBM2E+ PHY and I/O were identified.
• Different techniques for innovative design solution of HBM2E+ (>4Gbps) are implemented
– Design Solution
– I/O Modeling
– Top Level Solution
– Phase Wise Solution
• Silicon Validation
– High-speed interface test chip taped-out with HBM2E 3.2Gbps and HBM2E+ 4Gbps Interface in TSMC’s 7nm technology-Q1’19
– HBM2E and HBM2E+ IP Subsystem validation platform tape-out in TSMC’s 7nm technology – Q3’19
• SiFive’s HBM2E IP Subsystem (Controller + PHY + IO) in TSMC 7nm technology is available for SoCs for HPC and AI applications
• The Next Gen HBM2E+ IP Sub-System Specification is being analyzed for SoCs enabling next generation high bandwidth applications
Summary
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Thank You