golden list of reviewers for 2009

2856 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 56, NO. 12, DECEMBER 2009

Golden List of Reviewers for 2009First Name Last Name Affiliation Country

Andreas Aal ELMOS Semiconductor GermanyJaan Aarik University of Tartu EstoniaAnnemarie Aarts Eindhoven University of Technology The NetherlandsHenok Abebe University of Southern California USAArmin Aberle National University of Singapore SingaporeAlberto Adan Sharp Corporation JapanKoorosh Aflatooni Qualcomm Inc. USARitesh Agarwal University of Pennsylvania USASapan Agarwal University of California at Berkeley USASu-Jin Ahn Samsung Electronics Co. Ltd. KoreaThomas Aichinger KAI-Kompetenzzentrum AustriaNader Akil Photovoltech NV BelgiumRichard Akis Arizona State University USAKhairul Alam East West University IndiaJohn Albrecht Air Force Res. Lab. USAAfzali-Kusha Ali Tehran University IranMassimo Alioto Universita di Siena ItalyRichard Allen National Institute of Standards & Technology USAKarl-Heinz Allers Infineon AG GermanyDaniel Alquier LMP-ST Microelectronics FranceFabio Durante Alves Instituto de Tecnologia Aeronautica BrazilBob Amantea Samdai Consulting USABehnam Amelifard Qualcomm Inc. USAYoshihito Amemiya Hokkaido University JapanManjeri Anatram University of Waterloo CanadaCristian Andrei IEMN FrancePetru Andrei Florida State University USAFrancois Andrieu CEA-LETI FranceDiing Shenp Ang Nanyang Technological University SingaporeKottantharayil Anil Indian Institute of Technology Bombay IndiaHideaki Aochi Toshiba Corporation JapanHideki Aono Renesas Technology Corp. JapanReza Arghavani Applied Materials Inc. USAYoshihiro Arimoto Fujitsu Laboratories Ltd. JapanAlastair Armstrong Queen’s University of Belfast IrelandAlfredo Arnaud Universidad Catolica del Uruguay UruguayLucile Arnaud CEA-LETI FranceAntonio Arreghini IMEC BelgiumSubramaniam Arulkumaran Nanyang Technological University SingaporeAsen Asenov University of Glasgow United KingdomSaman Asgaran AMI Semiconductor CanadaPeter Ashburn University of Southampton United KingdomYoshio Ashizawa Fujitsu Microelectronics Ltd. JapanChristopher Ashman Naval Research Laboratory USAAbdulla Atalar Bilkent University TurkeyBrian Aull Massachusetts Institute of Technology USAChris Auth Intel Corp. USAFarrokh Ayazi Georgia Institute of Technology USA

Digital Object Identifier 10.1109/TED.2009.2035486

0018-9383/$26.00 © 2009 IEEE

IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 56, NO. 12, DECEMBER 2009 2857

First Name Last Name Affiliation Country

Sher Azam Linkoping University SwedenFlorin Babarada University Politehnica of Bucharest RomaniaGiorgio Baccarani Universita degli Studi di Bologna ItalyJun-Soo Bae Samsung KoreaAlessandro Baiano Delft University of Technology The NetherlandsSeung Jae Baik Korea Advanced Inst. of Science & Technology KoreaAlexander Balandin University of California at Riverside USALivio Baldi Numonyx ItalyFrancis Balestra IMEP FranceMonika Balk CST Computer Simulation Technology GermanyIbrahim Ban Intel Corporation USAKaustav Banerjee University of California at Santa Barbara USASanjay Banerjee University of Texas at Austin USANaoki Banno NEC Corporation JapanKausar Banoo Agere Systems USAAditya Bansal IBM Corporation USAEmanuele Baravelli Universita degli Studi di Bologna ItalyMarie Garcia Bardon IMEC BelgiumN. Scott Barker University of Virginia USAThierry Baron CNRS-LTM USAVincent Barral STMicroelectronics FranceJoaquim Barroso National Institute for Space Research BrazilMarian Bartek Delft University of Technology The NetherlandsPaul Basore REC Technology US Inc. USAGiovanni Basso Universita degli Studi di Pisa ItalyPrasanta Basu University of Calcutta IndiaWilliam Batty Fugro-Jason Netherlands B.V. The NetherlandsAnton Bauer Fraunhofer Inst. Integrierte Schaltungen GermanyFilip Bauwens AMI Semiconductor BelgiumDaniel Bauza CNRS FranceDidier Belot STMicroelectronics FranceOlof Bengtsson University of Gavle SwedenAugusto Benvenuti Numonyx ItalyMarc Bescond Minatec-INPG FranceAnup Bhalla Alpha and Omega Semiconductor Ltd. USASarvesh Bhardwaj Synopsys Inc. USAK. N. Bhat Indian Institute of Science IndiaNavakanta Bhat Indian Institute of Science IndiaPamela Bhatti Georgia Institute of Technology USAAzeez Bhavnagarwala IBM Corporation USAKrishna Bhuwalka Taiwan Semiconductor Manufacturing Company TaiwanKip Bishofberger Los Alamos National Laboratory USAGabriele Bisognin University of Padova ItalyAbhijit Biswas University of Calcutta IndiaPeter Blakey Northern Arizona University USAMonica Blank Communications & Power Industries USAVolker Blaschke Jazz Semiconductor USASerge Blonkowski STMicroelectronics FranceIlan Bloom Saifun Semiconductors Ltd. IsraelGeorg Boeck Technische Universitaet Berlin GermanyJeffrey Bokor University of California at Berkeley USADuane Boning Massachusetts Institute of Technology USAJ. Brad Boos National Research Labs USAJohn Booske University of Wisconsin-Madison USANuno Borges De Carvalho Universidade de Aveiro PortugalVicente Boria Universidad Politecnica de Valencia Spain



Hakon Borli Energy Micro AS NorwayGianluca Boselli Texas Instruments Inc. USAGijs Bosman University of Florida USAJean-Philippe Bourgoin CEA FranceArnaud Bournel Universite Paris Sud FranceKeith Bowman Intel Corp. USAVladimir Bratman Institute for Applied Physics RussiaGheorghe Brezeanu Politehnica University Bucharest RomaniaDouglas Brisbin National Semiconductor Corporation USAStephane Bronckers IMEC BelgiumDavid Brunco Intel Corp. USAHugues Brut STMicroelectronics FranceJulien Buckley CEA FranceFabian Bufler ETH Zurich SwitzerlandGyoung-Ho Buh Korea Intellectual Property Office KoreaAlexander Burenkov Fraunhofer Institute GermanyAchim Burghartz Institute for Microelectronics Stuttgart GermanyBarry Burke Massachusetts Institute of Technology USAPeter Burke University of California at Irvine USARaphael Butte Ecole Polytechnique Federale de Lausanne SwitzerlandMarkus Buttiker University of Geneva SwitzerlandSergey Bychikhin Technical University of Vienna AustriaAntonio Cacciato IMEC BelgiumMarc Cahay University of Cincinnati USAMing Cai IBM Corporation USABenton Calhoun University of Virginia USAEmilio Camerlenghi STMicroelectronics ItalyCharles Campbell TriQuint Semiconductor USAJason Campbell National Institute of Standards & Technology USAJoe Campbell University of Virginia USABret Cannon Pacific Northwest National Lab. USAEugenio Cantatore Eindhoven University of Technology The NetherlandsKevin Cao Arizona State University USAXian-An (Andrew) Cao West Virginia University USAYu (Kevin) Cao Arizona State University USAAlain Cappy IEMN- UMR FranceLode Carnel REC Scanwafer NorwayMalcolm Carroll Sandia National Laboratories USARichard Carter Lancaster University United KingdomAndrea Castoldi Politecnico di Milano ItalyNicolas Cavassilas Universite de Provence FranceZeynep Celik-Butler University of Texas at Arlington USAGiorgio Cellere Applied Materials Baccini ItalyAntonio Cerdeira CINVESTAV MexicoSaurav Chakraborty Tyfone Communications Development IndiaDaniel S. H. Chan National University of Singapore SingaporeMansun Chan Hong Kong University of Science and Technology Hong KongPhilip C. H. Chan Hong Kong University of Science and Technology Hong KongWinston Chan Sarnoff Corporation USAYi-Jen Chan National Central University TaiwanHsu-Yu Chang University of California at Los Angeles USAKo-Min Chang Freescale Semiconductor Inc. USAMau-Chung Chang University of California at Los Angeles USAShoou-Jinn Chang National Cheng Kung University TaiwanYao-Wen Chang Macronix International Co. Ltd. TaiwanKuei-Shu Chang-Liao National Tsing Hua University Taiwan



Tien-Sheng Chao National Chiao Tung University TaiwanYu-Lin Chao University of California at Los Angeles USASanatan Chattopadhyay University of Newcastle upon Tyne United KingdomKiran Chatty IBM Corporation USABrian (Qiang) Chen Synopsys Inc. USAChang-Lee Chen Massachusetts Institute of Technology USACharlie Chung-Ping Chen National Taiwan University TaiwanChih-Hung (James) Chen McMaster University CanadaChunhong Chen University of Windsor CanadaJone Chen National Cheng-Kung University ChinaJung-Sheng Chen Fairchild Semiconductor TaiwanKuan-Neng Chen National Chiao Tung University TaiwanMing-Jer Chen National Chiao Tung University TaiwanTianbing Chen Grace Semiconductor Manufacturing Corporation USAZhi Chen University of Kentucky USAZhong Chen Texas Instruments Inc. USAZuhui Chen Nanyang Technological University SingaporeBinjie Cheng University of Glasgow United KingdomKuo-Sheng Cheng National Cheng Kung University TaiwanLin Cheng CREE Research USAMing-Cheng Cheng Clarkson University USATom Cheng Georgia Institute of Technology USAXu Cheng Freescale Semiconductor Inc. USAYu-Ting Cheng National Chiao Tung University TaiwanDavid Chernin Science Applications International Corp. USAIgor Chernyavskiy Science Applications International Corp. USA(Charles) Kin Cheung Rutgers, The State University of New Jersey USAChristine Chevalier ANALEX Corporation USAMeng-Hsueh Chiang National Ilan University TaiwanTe-Kuang Chiang Southern Taiwan University of Technology TaiwanFeng-Tso Chien Feng Chia University TaiwanAlbert Chin National Chiao Tung University TaiwanAlessandro Chini Universita di Modena e Reggio Emilia ItalyHwann-Kaeo Chiou National Central University TaiwanHsien-Chin Chiu Chang Gung University TaiwanKeun Hwi Cho Samsung Electronics Co. Ltd. KoreaMin Hee Cho Samsung Electronics Co. Ltd. KoreaMoon Ju Cho IMEC BelgiumVamsy Chodavarapu McGill University CanadaByung Yong Choi Samsung Electronics Co. Ltd. KoreaEun-Seok Choi Hynix Semiconductor Inc. KoreaJin Choi Kwangwoon University KoreaSiyoung Choi Samsung Electronics Co. Ltd. KoreaWon-Jun Choi Korea Institute of Science & Technology KoreaWoo Young Choi Sogang University KoreaYang-Kyu Choi Korea Advanced Inst. of Science & Technology KoreaChae Chong L-3 Communications Electron Techologies, Inc. USAPaul Chow Rensselaer Polytechnic Institute USAKwo Ray Chu National Tsing Hua University TaiwanPaul Chu City University of Hong Kong Hong KongChi On Chui University of California at Los Angeles USAEduardo Chumbes Raytheon Company USAYoung Chung Freescale Semiconductor Inc. USAGennadiy Churyumov Kharkov National University of Radio Electronics UkraineCarmine Ciofi Universita di Messina ItalyDonald Clugston CSG Solar AG Germany



Lorenzo Colace University “Roma Tre” ItalyJean Pierre Colinge Tyndall National Institute IrelandNadine Collaert IMEC BelgiumChristian Monzio Compagnoni Politecnico di Milano ItalyJohn Compton Eastman Kodak Company USADaniel Connelly Acorn Technologies USAVassilios Constantoudis Institute of Microelectronics GreeceHarry Contopanagos IMEL GreeceSimon Cooke Naval Research Laboratory USAGeoffrey Coram Analog Devices Inc. USADomenico Corso IMM-CNR ItalyBernard Courtois CMP FrancePeter Cousins Sun Power Corporation The PhillipinesGiuseppe Crisenza Numonyx ItalySorin Cristoloveanu IMEP-MINATEC FranceFelice Crupi Universita della Calabria ItalyGilberto Curatola NXP Semiconductors BelgiumRoel Daamen NXP Semiconductors BelgiumMattias Dahlstrom IBM Microelectronics Division USAJiyan Dai The Hong Kong Polytechnic University Hong KongGilles Dambrine IEMN FranceJean-Francois Damlencourt CEA-LETI FranceFrancois Danneville CNRS-IEMN FranceMohamed Darwish MaxPower Semiconductor Inc. USAAmitava DasGupta Indian Institute of Technology Madras IndiaNandita DasGupta Indian Institute of Technology Madras IndiaAnimesh Datta Qualcomm Inc. USASubrata Kumar Datta Defence Research and Development Organization IndiaJohn David The University of Sheffield United KingdomJames Dayton Jr. Theraphysics USAC. H. (Kees) de Groot University of Southampton United KingdomBrice De Jaeger IMEC BelgiumAn De Keersgieter IMEC BelgiumKoen De Munck IMEC BelgiumGerald Deboy Infineon Technologies AG GermanyStefaan Decoutere IMEC BelgiumDavid Deen Naval Research Laboratory USAEmmanuel Defay CEA-LETI FranceChrystel Deguet CEA-LETI FranceJesus del Alamo Massachusetts Institute of Technology USACarlos del Canizo ETSI Telecomunicacion SpainErtugrul Demircan Freescale Semiconductor Inc. USAJianyu Deng Sensor Electronic Technology, Inc. USAJie Deng IBM Corporation USAMarie Denison Texas Instruments Inc. USAChuck Dennison Ovonyx, Inc. USAHermant Deshpande Intel Corp. USAGajanan Dessai Arizona State University USAChuck Dezelah Helsinki University of Technology FinlandAldo Di Carlo University of Rome “Tor Vergata” ItalyGirolamo Di Francia ENEA Research Center ItalyJames Di Sarro University of Illinois at Urbana-Champaign USABirahim Diagne University of Strasbourg FranceCharalabos Dimitriadis Aristotle University of Thessaloniki GreeceSima Dimitrijev Griffith University AustraliaA. Thanasis Dimoulas IMS Demokritos Greece



Norman Dionne Raytheon Corporation USADon Disney Monolithic Power Systems USAFaycal Djeffal University of Batna, Algeria AlgeriaValentin Dobrovolsky Institut of Semiconductor Physics UkraineValery Dolgashev Stanford Linear Accelerator Center USAPhilippe Dollfus Universite Paris Sud FranceGary Dolny Fairchild Semiconductor USAJoseph Donnelly University of Texas at Austin USAToby Doorn NXP Semiconductors The NetherlandsGerben Doornbos Taiwan Semiconductor Manufacturing Company BelgiumFrancesco Driussi Universita degli Studi di Udine ItalyJun Du Advanced Electronic Materials Institute ChinaRussell Duane University College Cork IrelandEmmanuel Dubois IEMN FranceLaurent Duraffourg CEA-LETI FranceCharvaka Duvvury Texas Instruments Inc. USAWilliam Eisenstadt University of Florida USABoaz Eitan Saifun Semiconductors Ltd. IsraelMonir El-Diwany National Semiconductor Corporation USAKazuhiko Endo National Institute of AIST JapanGeert Eneman IMEC BelgiumTatsuya Ezaki Hiroshima University JapanChristian Fager Chalmers Institute of Technology SwedenSunfei Fang IBM Corporation USAYean-Kuen Fang National Cheng Kung University TaiwanDaniel Farias Universidad Autonoma de Madrid SpainJohn Faricelli Advanced Micro Devices Inc. USAPatrick Fay University of Notre Dame USAOlivier Faynot CEA-LETI FrancePier-Francesco Fazzini LAAS-CNRS FranceGary Fedder Carnegie Mellon University USAAlexander Fedoseyev CFD Research Corporation USALeonard Feldman Vanderbilt University USAJia Feng Global Foundries USAClaire Fenouillet-Beranger STMicroelectronics FranceRaul Fernandez Universitat Politecnica de Catalunya SpainDavid Ferry Arizona State University USAClaudio Fiegna Universita degli Studi di Bologna ItalyDejan Filipovic University of Colorado USAAphrodite Filippas Virginia Commonwealth University USAMassimo Fischetti University of Massachusetts USATor Fjeldly Norwegian University of Science & Technology NorwayDenis Flandre Universite Catholique de Louvain BelgiumNeville Fletcher The Australian National University AustraliaAndrew Flewitt University of Cambridge United KingdomClifton Fonstad Massachusetts Institute of Technology USAJerry Fossum University of Florida USASebastien Fregonese CNRS FranceWilliam Frensley University of Texas at Dallas USATatsuhiko Fujihira Fuji Hitachi Power Semiconductor Co. Ltd. JapanYukio Fukuda Tokyo University of Science, Suwa JapanMichael Furitsch Osram Opto Semiconductor GermanyArnaud Furnemont Intel Corp. BelgiumStephen Gaalema Black Forest Engineering LLC USAMarc Gaillardin Minatec-INPG FranceCarlos Galup-Montoro Universidade Federal de Santa Cantarina Brazil



Philippe Galy STMicroelectronics FranceFrancisco Gamiz Universidad de Granada SpainChee Lip Gan Nanyang Technological University SingaporeJean-Daniel Ganiere Ecole Polytechnique Federale de Lausanne SwitzerlandJianjun Gao East China Normal University ChinaWei Gao Tsinghua University ChinaFrancisco Garcia-Sanchez Universidad Simon Bolivar VenezuelaRobert Gauthier IBM Corporation USALixin Ge Freescale Semiconductor Inc. USACosimo Gerardi Numonyx ItalyDon Gerber Microchip Technology Inc. USAMarianne Germain IMEC BelgiumReza Ghaffarian NASA USATahir Ghani Intel Corp. USAAndrea Ghetti Numonyx ItalyGerard Ghibaudo IMEP/ENSERG FranceGabriella Ghidini STMicroelectronics ItalyTushar Ghosh E2V Technologies United KingdomGennady Gildenblat Arizona State University USAMartin Giles Intel Corp. USARon Gilgenbach University of Michigan USABenito Martinez Gimeno Universidad de Valencia SpainUlrich Glaser Infineon Technologies AG GermanyDaniel Gloria STMicroelectronics FrancePhilippe Godignon Centro Nacional de Microelectronica SpainDusan Golubovic NXP Semiconductors BelgiumHenrique Gomes Universitade do Algarve PortugalYubin Gong University of Electronic Science & Technology ChinaTomas Gonzalez Universidad de Salamanca SpainJung-Suk Goo Advanced Micro Devices Inc. USAKailash Gopalakrishnan IBM Corporation USAYehuda Goren Teledyne Electronic Technologies USAHerbert Goronkin NanoBusiness Alliance USAHans-Joachim Gossmann Varian Semiconductor Equipment Association USAHarald Gossner Infineon Technologies GermanyTheodosia Gougousi University of Maryland USABogdan Govoreanu IMEC BelgiumRalf Granzner Technische Universitaet Ilmenau GermanyTibor Grasser Technical University of Vienna AustriaBonnie Gray Simon Fraser University CanadaMartin Green University of New South Wales AustraliaDavid Greenberg IBM Corporation USACurtis Grens Georgia Institute of Technology USABernhard Grote Freescale Semiconductor Inc. USAPaul Grudowski Freescale Semiconductor Inc. USAGeorges Guegan CEA-LETI FranceBernard Guillaumot CEA-LETI FranceJaume Roig Guitart AMI Semiconductor Belgium BVBA BelgiumRasim Guldiken University of South Florida USADavid Gundlach National Institute of Standards & Technology USAJing Guo University of Florida USAJyh-Chyurn Guo National Chiao Tung University TaiwanYufeng Guo Nanjing University ChinaAseem Gupta University of California at Irvine USAR. S. Gupta University of Delhi IndiaMoshe Gurfinkel Tel Aviv University Israel



Augusto Gutierrez-Aitken Northrop Grumman Space Technology USADaewon Ha Samsung Electronics Co. Ltd. KoreaGaddi Haase Texas Instruments Inc. USAEugene Haller University of California at Berkeley USATakeshi Hamamoto Toshiba Corporation JapanScott Hanson University of Michigan USAAnisul Haque East West University BangledeshNaoki Harada Fujitsu Laboratories JapanVenkatnarayan Hariharan Indian Institute of Technology Bombay IndiaOlin Hartin Freescale Semiconductor Inc. USAPouya Hashemi Massachusetts Institute of Technology USAMasanori Hashimoto Osaka University JapanTamotsu Hashizume Hokkaido University JapanAkimitsu Hatta Kochi University of Technology JapanReiji Hattori Kyushu University JapanMajeed Hayat The University of New Mexico USAJin (Frank) He Peking University ChinaDawei Heh Sematech USAAlexander Heigl Technische Universität München GermanyUlrich Heinle Uppsala University SwedenBahman Hekmatshoar Princeton University USAGeert Hellings IMEC BelgiumMartin Hermle Fraunhofer Inst. for Solar Energy Systems GermanyKazumasa Hiramatsu Mie University JapanYuichi Hirano Renesas Technology Corporation JapanYoshiro Hirayama Tohoku University JapanKenji Hirose NEC Corporation JapanKarl Hirschman Rochester Institute of Technology USADigh Hisamoto Hitachi Ltd. JapanKen Hoagland KAH Engineering Services USAGerhard Hobler Technical University of Vienna AustriaJaap Hoekstra Delft University of Technology The NetherlandsJan Hoentschel Advanced Micro Devices Inc. GermanyAlan Hoffman Acumen Scientific USARandy Hoffman Hewlett-Packard Co. USAAkira Hokazono Toshiba Corporation Semiconductor Company JapanDaniel Holstein Performance Microwave USAKi-Ha Hong Samsung Advanced Institute of Technology KoreaXianlong Hong Tsinghua University ChinaYongtaek Hong Seoul National University KoreaPhil Hower Texas Instruments Inc. USAHsing-Hung Hsieh National Taiwan University TaiwanYue-Ming Hsin National Central University TaiwanHeng-Tung Hsu Yuan Ze University TaiwanTzu-Hsuan (Bruce) Hsu Macronix International Co. Ltd. TaiwanChung-Che (Steven) Huang Photon Dynamics Inc. USADaming Huang Fudan University ChinaJung-Sheng Huang I-Shou University TaiwanStephen Hudgens Ovonyx, Inc. USARay Hueting University of Twente The NetherlandsTodd Humes Virage Logic USAH. Alfred Hung Army Research Lab. USAGary Hunter NASA Research Center USAMuhammad Mustafa Hussain King Abdullah University of Science and Technology Saudi ArabiaHyunsang Hwang Gwangju Institute of Science & Technology KoreaJames C. M. Hwang Lehigh University USA



Jiunn-Ren Hwang Taiwan Semiconductor Manufacturing Company TaiwanSung Woo Hwang Korea University KoreaGiuseppe Iannaccone Universita degli Studi di Pisa ItalyDaniele Ielmini Politecnico di Milano ItalyMeikei Ieong Taiwan Semiconductor Manufacturing Company TaiwanTakahiro Iizuka NEC Electronics Corporation JapanShoji Ikeda Tohoku University JapanMarc Ilegems Ecole Polytechnique Federale de Lausanne SwitzerlandGiuliana Impellizeri University of Catania ItalySatoshi Inaba Toshiba Corporation Semiconductor Company JapanRyosuke Inagaki STARC JapanBenjamin Iniguez Universitat Rovira i Virgili (URV) SpainHiroshi Inokawa Shizuoka University JapanSatoshi Inoue Seiko Epson Corporation JapanDimitris Ioannou George Mason University USAAdrian Mihai Ionescu Ecole Polytechnique Federale de Lausanne SwitzerlandToshifumi Irisawa Toshiba Corporation JapanTakeshi Ishida Hitachi Ltd. JapanTomohiro Ishikawa Motorola USAKazunari Ishimaru Toshiba Corporation Semiconductor Company JapanTetsuya Ishimaru Hitachi Ltd. JapanHiroshi Ishiwara Tokyo Institute of Technology JapanAhmad Islam Purdue University USASyed Islam Alvand Technologies, Inc. USAManabu Ito Toppan Printing Co. Ltd. JapanMark Itzler Princeton Lightwave Inc. USAToshiaki Iwamatsu Renesas Technology Corporation JapanJose Ignacio Izpura Universidad Politecnica de Madrid SpainCarlo Jacoboni Universita di Modena e Reggio Emilia ItalyRolf Jakoby Technische Universität Darmstadt GermanyRaj Jammy Sematech USAMeir Janai Saifun Semiconductors Ltd. IsraelDavid Janes Purdue University USAJim Janesick Sarnoff Corporation USAAnti-Pekka Jauho Technical University of Denmark DenmarkErik Jeng Chung Yuan Christian University TaiwanJae Kyeong Jeong Inha University KoreaYoon-Ha Jeong Pohang University of Science & Technology KoreaKjell Jeppson Chalmers Institute of Technology SwedenRui Jia Institute of Microelectronics of Chinese Academy of Sciences ChinaBin Jie University of Florida USADavid Jimenez Universidad Autonoma de Barcelona SpainSatyabrata Jit Banaras Hindu University IndiaColin Joye Massachusetts Institute of Technology USAAndre Juge STMicroelectronics FrancePatrick Juliano Intel Corp. USAKooho Jung Cascade Microtech Inc. USAAdnan Kabbani Ryerson University CanadaBen Kaczer IMEC BelgiumMasaru Kadoshima Renesas Technology Corp. JapanHiroaki Kakiuchi Osaka University JapanKarol Kalna University of Glasgow United KingdomHideki Kamitsuna NTT Corporation JapanEdwin Kan Cornell University USAMichael Kane Sarnoff Corporation USABongKoo Kang Pohang University of Science & Technology Korea



Chang Yong Kang Sematech USADae Woong Kang Seoul National University KoreaJinfeng Kang Peking University ChinaJungwon Kang Dankook University KoreaNarasimhulu Kanike IBM Corporation USAShreepad Karmalkar Indian Institute of Technology IndiaIlya Karpov Intel Corp. USASergey Karpov STR Grp Sof Impact, Ltd. RussiaVictor Karpov University of Toledo USAKeith Kato Raytheon Company USAHisao Katto Tokyo University of Science, Suwa JapanJack Kavalieros Intel Corp. USATakaaki Kawahara Renesas Technology Corporation JapanHiroshisa Kawasaki Toshiba Corporation Semiconductor Company JapanThomas Kazior Raytheon Company USAJakub Kedzierski Massachusetts Institute of Technology USADavid Kencke Intel Corp. USAMing-Dou Ker National Chiao Tung University TaiwanAli Khakifirooz IBM Corporation USAM. Asif Khan University of South Carolina USATakir Khan Freescale Semiconductor Inc. USAMukesh Khare IBM Corporation USAVishnu Khemka Freescale Semiconductor Inc. USAMartin Kiik DALSA Corp. CanadaBongsang Kim University of California at Berkeley USADae Hwan Kim Kookmin University KoreaDong-Won Kim Samsung Electronics Co. Ltd. KoreaJeong-Il Kim Purdue University USAKeunwoo Kim IBM Corporation USAKi-Bum Kim Seoul National University KoreaKinam Kim Samsung Electronics Co. Ltd. KoreaKyung Rok Kim Stanford University USAMin-Sang Kim Samsung Electronics Co. Ltd. KoreaSangBum Kim Stanford University USASeong-Dong Kim IBM Corporation USAWoopoung Kim Rambus Inc. USAYeong-Seuk Kim Chung-Buk National University KoreaMasafumi Kimata Ritsumeikan University JapanMutsumi Kimura Ryukoku University JapanMike Kinch DRS Infrared Technologies USAAtsuhiro Kinoshita Stanford University USAKentarou Kinoshita Tottori University JapanLaszlo Kish Texas A&M University USAJohn Kitching National Institute of Standards & Technology USAYukihiro Kiyota Sony Corporation JapanHagen Klauk Max-Planck-Institut fur Festkorperforschung GermanyWilfried Klix University of Applied Sciences Dresden GermanyAlexander Kloes University of Applied Sciences Giessen-Friedberg GermanyJohan Klootwijk Philips Research The NetherlandsIrena Knezevic University of Wisconsin-Madison USAJoachim Knoch Technische Universität Dortmund GermanyPaul Kohl Georgia Institute of Technology USAGoutam Koley University of South Carolina USAGuenter Kompa Universitaet Kassel GermanyMasao Kondo Renesas Technology Corporation JapanMartin Kordesch Ohio University USA



Carol Kory Calabazas Creek Research Inc. USAHans Kosina Technical University of Vienna AustriaSiyuranga Koswatta IBM Corporation USAIvan Kotov Brookhaven National Lab. USAAnil Kottantharayil Indian Institute of Technology Bombay IndiaShinzo Koyama Matsushita Electric Industrial Co. Ltd. JapanLester Kozlowski CTO Altasens USAAbhinav Kranti Queen’s University of Belfast United KingdomKen Kreischer Northrop Grumman Corporation USATejas Krishnamohan Stanford University USAShaw-Hung Ku National Chiao Tung University TaiwanWeiwei Kuang Synopsys Inc. USAMartin Kuball University of Bristol United KingdomStefan Kubicek IMEC BelgiumHitoshi Kubota AIST JapanKelin Kuhn Intel Corp. USAVishal Kulkarni Keio University JapanRakesh Kumar A*Star Institute of Microelectronics SingaporeMichael Kund Qimonda AG GermanyLance Kuo Raytheon Company USAYue Kuo Texas A&M University USAHideaki Kurata Hitachi Ltd. JapanJan Kuzmik Slovak Academy of Sciences SlovakiaDuygu Kuzum Stanford University USAJoyce Kwong Massachusetts Institute of Technology USAIoannis (John) Kymissis Columbia University USAAndrea Lacaita Politecnico di Milano ItalyRomain Laffont CNRS-UMR FranceIvan C. H. Lai Fujitsu Microelectronics, Ltd. JapanPeter Lai The University of Hong Kong Hong KongStefan Lai Ovonyx Technologies, Inc. USAChristophe Lallement University of Strasbourg FranceChung Lam IBM Corporation USALuca Larcher Universita di Modena e Reggio Emilia ItalyTorben Larsen Aalborg University DenmarkJohn Larson Cypress Semiconductor USAPer Larsson-Edefors Chalmers University of Technology SwedenSteven Laux IBM Corporation USAStefan Lauxtermann Teledyne Imaging Sensors USAMihai Lazar INSA Lyon FranceAntonio Lazaro Universitat Rovira i Virgili (URV) SpainSern Leang VIS Singapore Pte Ltd. SingaporeByoung Hun Lee Gwangju Institute of Science & Technology KoreaChang-Hyun Lee Samsung Electronics Co. Ltd. KoreaJack Lee University of Texas at Austin USAJen-Hao Lee Taiwan Semiconductor Manufacturing Company TaiwanJong-Ho Lee Kyungpook National University KoreaJong-Jan Lee Sharp Labs. of America USAJongsoo Lee Gwangju Institute of Science & Technology KoreaKyong Taek Lee Pohang University of Science & Technology KoreaSi-Chen Lee National Taiwan University TaiwanSung-Young Lee Samsung Electronics Co. Ltd. KoreaTakhee Lee Gwangju Institute of Science & Technology KoreaWen-Chin Lee Taiwan Semiconductor Manufacturing Company TaiwanMeikei Leong Taiwan Semiconductor Manufacturing Company TaiwanMike Lesser University of Arizona USA



Arnulf Leuther Fraunhofer Institute for Applied Solid State Physics GermanyBin Li University of Electronic Science & Technology ChinaLin Li Hong Kong University of Science and Technology Hong KongMing-Fu Li Fudan University ChinaPei-Wen Li National Central University TaiwanXiaojun Li Intel Corp. USAYan Li Sandisk Corporation USAYiming Li National Chiao Tung University TaiwanQingqing Liang IBM Corporation USAChinchang Liao Semiconductor Manufacturing International ChinaWen-Shiang Liao United Microelectronics Corporation TaiwanAndy Eu-Jin Lim Institute of Microelectronics SingaporeFrancois Lime Universitat Rovira i Virgili (URV) SpainDe-yu Lin National Changhua University of Education TaiwanHorng-Chih Lin National Chiao Tung University TaiwanWallace Lin Linden Design Technologies, Inc. USAYo-Sheng Lin National Chi-Nan University TaiwanLoren Linholm - USATom Linton Intel Corp. USAJuin Liou University of Central Florida USATsung-Yang Liow Institute of Microelectronics SingaporeChee Wee Liu Industrial Technology Research Institute TaiwanJianlin Liu University of California at Riverside USALifeng Liu Peking University ChinaPo Wei Liu United Microelectronics Corporation TaiwanRich Liu Macronix International Co. Ltd. TaiwanSheng Liu Peking University ChinaTsu-Jae King Liu University of California at Berkeley USAXiaoyan Liu Peking University ChinaYang Liu Stanford University USAYongxun Liu AIST JapanGuo-Qiang (Patrick) Lo Institute of Microelectronics SingaporeSimone Locci Technische Universitat Munchen GermanyWei Yip Loh Sematech SingaporeSalvatore Lombardo CNR-IMETEM ItalyLifang Lou Texas Instruments Inc. USAHuaxin Lu Texas Instruments Inc. USAJames Lu Rensselaer Polytechnic Institute USAJia Grace Lu University of Southern California USAShey-Shi Lu National Taiwan University TaiwanMathieu Luisier Purdue University USAMark Lundstrom Purdue University USAXiaorong Luo University of Electronic Science & Technology ChinaFelix Lustenberger CSEM SwitzerlandYanjun Ma Impinj Inc. USAMassimo Macucci Universita degli Studi di Pisa ItalyPaolo Magnone Universita della Calabria ItalyWim Magnus IMEC USASantanu Mahapatra Indian Institute of Science IndiaSouvik Mahapatra Indian Institute of Technology Bombay IndiaVrajesh Maheta Indian Institute of Technology IndiaHamid Mahmoodi San Francisco State University USAChinmay Maiti Indian Institute of Technology IndiaAmlan Majumdar IBM Corporation USARamana Malladi IBM Corporation USAAbhijit Mallik University of Calcutta India



Denis Mamaluy Arizona State University USAAlain Mangan University of Toronto CanadaSanjeev Manhas Semiconductor Devices & VLSI Technology (SDVT) IndiaJean-Robert Manouvrier STMicroelectronics FranceFrancois Marc Universite de Bordeaux FranceDiego Marchetto Universita di Modena e Reggio Emilia ItalySaulius Marcinkevicius Royal Institute of Technology (KTH) SwedenJean Claude Marin STMicroelectronics FranceOgnian Marinov McMaster University CanadaTomas Markvart University of Southampton United KingdomAndrea Marmiroli Numonyx ItalyKoen Martens IMEC BelgiumAndreas Martin Infineon Technologies AG GermanyFrancois Martin CEA-LETI FranceSandrine Martin University of Michigan USAFrederic Martinez Universite Montpellier II FranceTeresa Martin-Guerrero University of Malaga SpainSebastien Martinie CEA-LETI FranceYehia Massoud Rice University USAWitek Maszara Advanced Micro Devices Inc. USAJavier Mateos Universidad de Salamanca SpainKevin Matocha GE Global Research USAYoshinori Matsubara Toshiba Corporation JapanToshihiro Matsuda Toyama Prefectural University JapanTakashi Matsukawa AIST JapanAkinori Matsumoto Matsushita Electric Industrial Co. Ltd. JapanFumiyoshi Matsuoka Toshiba Coporation JapanKartikeya Mayaram Oregon State University USADonald Mayer The Aerospace Corporation USAFrederic Mayer CEA-LETI FranceSatoru Mayuzumi Sony JapanNathaniel McCaffrey - USAKevin McCarthy University College Cork IrelandR. Daniel McGrath Eastman Kodak Company USAJames Meindl Georgia Institute of Technology USABernd Meinerzhagen Technische Universitat Braunschweig GermanyGaudenzio Meneghesso Universita degli Studi di Padova ItalyMatteo Meneghini Universita degli Studi di Padova ItalyXiongfei Meng University of British Columbia CanadaMarkus Mergens QPX GmbH GermanyAndrei Mihnea SanDisk Corporation USAJose Millan Centro Nacional de Microelectronica SpainHideki Minari Osaka University JapanEnrique Miranda Universidad Autonoma de Barcelona SpainAlexei Miroshnichenko Saratov State Technical University RussiaDurga Misra New Jersey Institute of Technology USATomohiko Mitani Kyoto University JapanJerome Mitard IMEC BelgiumMaria Mitkova Boise State University USAMasafumi Miyamoto Hitachi Ltd. JapanToshihiko Miyashita Fujitsu Laboratories Ltd. JapanSeiichi Miyazaki Hiroshima University JapanIkuo Mizuno Matsushita Electronics Corporation JapanPeter Moens AMI Semiconductor Belgium BVBA BelgiumGabriel Molas CEA-LETI FranceOana Moldovan Universitat Rovira i Virgili (URV) Spain



Wolfgang Molzer Infineon Technologies AG GermanyYouichi Momiyama Fujitsu Laboratories JapanCarlos Galup Montoro Federal University of Santa Catarina BrazilTakahiro Morikawa Hitachi Ltd. JapanSatoshi Moriyama National Institute of Materials Science JapanArthur Morris wiSpry, Inc. USAKirsten Moselund IBM Research GmbH SwitzerlandAbhisek Motayed National Institute of Standards & Technology USAClaudio Motta Universidade de Sao Paulo BrazilChandra Mouli Micron Technology Inc. USASivakumar Mudanai Intel Corp. USAJudith Mueller IBM Corporation USAAnthony Mule Intel Corp. USADaniela Munteanu CNRS-UMR FranceIrina Munteanu Computer Simulation Technology AG GermanyChris Murray General Atomics USAAzad Naeemi Georgia Institute of Technology USAMakoto Nagata Kobe University JapanLaleh Najafizadeh Georgia Institute of Technology USAAkio Nakagawa Toshiba Corporation JapanYoshiharu Nakajima Sony Corporation JapanShunji Nakata NTT Microsystem Integration Labs JapanLan Nan National University of Singapore SingaporeLis Nanver Delft University of Technology The NetherlandsEttore Napoli University of Naples ItalyE. M. S. Narayanan Sheffield University United KingdomSudarshan Narayanan University of Massachusetts USAVijay Narayanan IBM Corporation USASameh Nassif-Khalil International Rectifier USAArokia Nathan University of Waterloo CanadaKenji Natori Tokyo Institute of Technology JapanMuhammad Nawaz University Graduate Center NorwaySaroj Nayak Rensselaer Polytechnic Institute USAHasan Nayfeh IBM Corporation USAOsama Nayfeh Massachusetts Institute of Technology USAYael Nemirovsky Technion-Israel Institute of Technology IsraelArnost Neugroschel University of Florida USAKwok Ng Semiconductor Research Corporation USATse (Tina) Nga Ng Palo Alto Reseach Center USAWai Tung Ng University of Toronto CanadaKhanh Nguyen Beam-Wave Research Inc. USAGareth Nicholas Sharp Laboratories of Europe Ltd. United KingdomPaul Nicollian Texas Instruments Inc. USAShawn Nicolson Toronto University USAArthur Nieuwoudt Synopsys Inc. USAJaakko Niinisto University of Helsinki FinlandAli Niknejad University of California at Berkeley USATak Ning IBM Corporation USAYann-Michel Niquet CEA Grenoble FranceThomas Nirschl Infineon Technologies GermanyYoshio Nishi Stanford University USAToshikazu Nishida University of Florida USAGuofu Niu Auburn University USATakashi Noguchi University of Ryukyu JapanKenji Nomura Tokyo Institute of Technology JapanAtif Noori Applied Materials Inc. USA



David Norton University of Florida USAEdward Nowak IBM Corporation USAKenneth K. O University of Florida USANixon O DALSA Corp. CanadaBorna Obradovic Texas Instruments Inc. USAShinichi Ogawa Selete Inc. JapanTsuneo Ogura Toshiba Coporation JapanChang Woo Oh Samsung Electronics Co. Ltd. KoreaHyung-rok Oh Samsung Electronics Co. Ltd. KoreaJungwoo Oh Sematech USARyuji Ohba Toshiba Corporation JapanTatsuya Ohguro Toshiba Corporation JapanYasuhisa Ohmura Kansai University JapanTakashi Ohsawa Toshiba Corporation JapanKimitoshi Okano Toshiba Corporation JapanSerguei Okhonin Innovative Silicon SA SwitzerlandPhil Oldiges IBM Corporation USAStephen O’Leary University of Windsor CanadaPiero Olivo Universita degli Studi di Ferrara ItalyJorgen Olsson Uppsala University SwedenIchiro Omura Kyushu Institute of Technology JapanAnthony O’Neill University of Newcastle upon Tyne United KingdomMizuki Ono Toshiba Corporation JapanOmer Oralkan Stanford University USAXavier Oriols Universitat Autonoma de Barcelona SpainAdelmo Ortiz-Conde Universidad Simon Bolivar VenezuelaCarl Osburn North Carolina State University USAMikael Ostling Royal Institute of Technology SwedenBarry O’Sullivan IMEC BelgiumYoshichika Otani RIKEN JapanSlimane Oussalah C.D.T.A. AlgeriaYijian Ouyang University of Florida USAAlvaro Padilla IBM Corporation USAAndrea Padovani Universita di Modena e Reggio Emilia ItalySangwoo Pae Intel Corporation USAArdechir Pakfar STMicroelectronics FranceBipul Pal University of Tsukuba JapanPierpaolo Palestri Universita degli Studi di Udine ItalyLes Palkuti Defense Threat Reduction Agency USAGaetano Palumbo Universita degli Studi di Catania ItalyJames Pan Advanced Micro Devices Inc. USASokrates Pantelides Vanderbilt University USAAsh Parameswaran Simon Fraser University CanadaKrishna Parat Intel Corp. USAByung-Gook Park Seoul National University KoreaChankwang Park Samsung KoreaJong Tae Park University of Incheon KoreaKi-Tae Park Samsung Electronics Co. Ltd. KoreaTai-su Park Samsung Electronics Co. Ltd. KoreaYoung-June Park Seoul National University KoreaKunal Parkeh Micron Technologies USAChittoor Parthasarathy STMicroelectronics FranceVitorio Passaro Politecnico di Bari ItalyMatthias Passlack Taiwan Semiconductor Manufacturing Company BelgiumNishant Patil Stanford University USAAmit Patra Indian Institute of Technology India



Abhijeet Paul Purdue University USABipul Paul Toshiba America Research Inc. USAOliver Paul University of Freiburg GermanyPaolo Pavan Universita di Modena e Reggio Emilia ItalyAkeed Ahmed Pavel University of Missouri-Columbia USAYuriy Pchelnikov SloWaveS, Inc. USAStephen Pearton University of Florida USAJohn Pekarik IBM Corporation USASameer Pendharkar Texas Instruments Inc. USAPhongphaeth Pengvanich University of Michigan USASabine Penka Infineon Technologies AG GermanyGerhard Pensl University of Erlangen-Nuremberg GermanyLuis Pereira CEMOP/UNINOVA PortugalA. G. Unil Perera Georgia State University USALuca Perniola CEA-LETI FranceDimitrios Peroulis Purdue University USAJohn Petillo Science Applications International Corp. USAKin-Leong Pey Nanyang Technological University SingaporeAnh-Tuan Pham Technische Universitaet Braunschweig GermanyJamie Phillips University of Michigan USAGianluca Piazza University of Pennsylvania USASergey Pidin Fujitsu Microelectronics, Ltd. JapanAgostino Pirovano Numonyx ItalyCalvin Plett Carleton University CanadaJean-Olivier Plouchart IBM Corporation USAGuy Poel University of Rochester USADionyz Pogany Technical University of Vienna AustriaThierry Poiroux CEA-LETI FranceGordon Pollack University of Texas at Dallas USAThomas Pompl Infineon Technologies AG GermanyChyiu Hyia Debora Poon Chartered Semiconduct MFG Ltd. SingaporeJef Poortmans IMEC BelgiumMarian Pospieszalski National Radio Astronomy Observatory USASiddharth Potbhare University of Maryland USAVincent Pott University of California at Berkeley USARobert Potter Sarnoff Corporation USASeamus Power Analog Devices Inc. USAChetan Prasad Intel Corp. USAFabien Pregaldiny Institut d’Electronique du Solide et des Systemes FranceGuillaume Prenat CEA FranceGregory Prigozhin Massachusetts Institute of Technology USAVittorio Privitera IMM-CNR ItalyRuediger Quay Fraunhofer Inst. for Applied Solid State GermanyDamien Querlioz Universite Paris Sud FranceDaniel Radack Institute for Defense Analyses USAConor Rafferty NoblePeak Vision USAQuentin Rafhay IMEP/ENSERG FranceMunaf Rahimo ABB Switzerland LTD SwitzerlandBipin Rajendran IBM Corporation USATitash Rakshit Intel Corp. USAShriram Ramanathan Harvard University USAPeter Ramm Fraunhofer Inst. for Reliability and Microintegration GermanyJiang Ran Shandong University ChinaUmberto Ravaioli University of Illinois at Urbana-Champaign USAChristine Raynaud STMicroelectronics FranceManijeh Razeghi Northwestern University USA



Andrea Redaelli Politecnico di Milano ItalyVijay Reddy Texas Instruments Inc. USALino Reggiani Universita di Lecce ItalySusanna Reggiani Universita degli Studi di Bologna ItalyHans Reisinger Infineon Technologies GermanyZhibin Ren IBM Corporation USARon Rendell Naval Research Laboratory USARaul Rengel Universidad de Salamanca SpainMarina Reyboz CEA-LETI FranceHwa Sung Rhee Samsung Electronics Co. Ltd. KoreaDenis Rideau STMicroelectronics FranceJae-Sung Rieh Korea University KoreaNiccolo Rinaldi Universita degli Studi di Napoli ItalyRafael Rios Intel Corp. USADan Ritter Technion-Israel Inst. of Technology IsraelCarlos Rivera Universidad Politecnica de Madrid SpainMark Rodwell University of California at Santa Barbara USAAntoni Rogalski Military University of Technology PolandKonstantinos Rogdakis IMEP FranceJohn Rogers University of Illinois at Urbana-Champaign USAJuan Roldan Universidad de Granada SpainFrancis Rotella Peregrine Semiconductor USAJulien-Marc Roux STMicroelectronics FranceAnanda Roy Intel Corporation USAOlivier Rozeau CEA-LETI FranceGuo-Ping Ru Fudan University ChinaMark Ruberto Intel Corp. USAJose Miguel Rubi Universitat de Barcelona SpainMassimo Rudan Universita degli Studi di Bologna ItalyTamara Rudenko National Academy of Sciences of Ukraine UkraineMatthias Rudolph Ferdinand-Braun-Institut GermanyChristian Russ Infineon Technologies GermanyPhillip Russell Appalachian State University USASubhash Rustagi Institute of Microelectronics SingaporeHeiner Ryssel Fraunhofer Institute GermanyVictor Ryzhii University of Aizu JapanFabio Sacconi University of Rome Tor Vergata ItalyAngada Sachid Indian Institute of Technology Bombay IndiaHamed Sadeghian Delft University of Technology The NetherlandsChih-Tang Sah University of Florida USAJerome Saint Martin Universite Paris Sud FranceWataru Saito Toshiba Corporation JapanMasumi Saitoh Toshiba Corporation JapanPaulius Sakalas Dresden University of Technology GermanyC. Andre Salama University of Toronto CanadaJavier Salcedo Analog Devices Inc. USAJean-Michel Sallese Ecole Polytechnique Federale de Lausanne SwitzerlandJosef Salzman Technion-Israel Institute of Technology IsraelPiyas Samanta - IndiaGanesh Samudra National University of Singapore SingaporeEnrique San Andres Universidad Complutense de Madrid SpainAdarsh Sandhu Tokyo Institute of Technology JapanMohan R. Sankaran Case Western Reserve University USASwaminathan Sankaran Texas Instruments USANobuyuki Sano University of Tsukuba JapanTomoya Sanuki Toshiba Corporation Japan



Hossein Sarbishaei University of Waterloo CanadaChandan Sarkar Jadavpur University IndiaSubir Kumar Sarkar Jadavpur University IndiaMotoyuki Sato Selete Inc. JapanYoshihiro Sato Fujitsu Laboratories JapanYvon Savaria Ecole Polytechnique de Montreal CanadaManoj Saxena University of Delhi IndiaJamie Schaeffer Motorola USAUlrich Schaper Infineon Technologies AG GermanyPascal Scheiblin CEA-LETI FranceAndreas Schenk ETH Zurich SwitzerlandChristian Schluender Infineon Technologies AG GermanyJurriaan Schmitz University of Twente The NetherlandsMarcio Schneider Universidade Federal de Santa Cantarina BrazilAndries Scholten NXP Semiconductors The NetherlandsDominique Schreurs Katholieke Universiteit Leuven BelgiumRonald Schrimpf Vanderbilt University USADieter Schroder Arizona State University USAThomas Schulz Infineon Technologies AG BelgiumJoerg Schulze Universitat Stuttgart GermanyUdo Schwalke Darmstadt University of Technology GermanyAlan Seabaugh University of Notre Dame USAAlwyn Seeds University College London United KingdomPeter Seitz CSEM Zurich SwitzerlandSiegfried Selberherr Technical University of Vienna AustriaLuca Selmi Universita degli Studi di Udine ItalyRavi Selvaganapathy McMaster University CanadaOleg Semenov University of Waterloo CanadaSean Sengele University of Wisconsin-Madison USAJeong Hyun Seo University of Inchon KoreaKwang-Seok Seo Seoul National University KoreaUgur Serincan Anadolu University TurkeyAshwin Seshia Cambridge University United KingdomAli Shakouri University of California at Santa Cruz USAHuiling Shang IBM Corporation USAAssaf Shappir Saifun Semiconductors Ltd. IsraelPrashant Sharma Suffolk University USAOleg Shchekin Philips Lumileds Lighting Co. USAPatrick Shea Northrop Grumman Corporation USAKuang Sheng Rutgers, The State University of New Jersey USADavid Sheridan Semi South Laboratories USAMichael Sherif Naval Postgraduate School USAXiaomeng Shi Nanyang Technological University SingaporeAdelina Shickova IMEC BelgiumNaoteru Shigekawa NTT Photonics Laboratories JapanYen-Hao Shih Macronix International Co. Ltd. TaiwanAkio Shima Stanford University USAMasashi Shima Fujitsu Laboratories Ltd. JapanKen Shimizu University of Tokyo JapanHyungcheol Shin Seoul National University KoreaMincheol Shin Information & Communications University KoreaWaleed Shinwari McMaster University CanadaJun-ichiro Shiomi University of Tokyo JapanMaryam Shojaei Indian Institute of Technology Bombay IndiaMayank Shrivastava Indian Institute of Technology Bombay IndiaMichael Shur Rensselaer Polytechnic Institute USA



Grigory Simin University of South Carolina USAEddy Simoen IMEC BelgiumJohnny Sin The Hong Kong University of Science & Technology Hong KongNavab Singh Institute for Microelectronics SingaporePawan Singh Indian Institute of Technology Bombay IndiaKishore Singhal Synopsys Inc. USAFranz Sischka Agilent Technologies GmbH GermanyGeorge Skidmore DRS Infrared Technologies USAThomas Skotnicki STMicroelectronics FranceJeffrey Sleight IBM Corporation USAEvgenya Smirnova Los Alamos National Laboratory USAGert D. J. Smit NXP Semiconductors The NetherlandsKurt Smith Raytheon Company USARichard Smith University of Surrey United KingdomStewart Smith The University of Edinburgh United KingdomDavid Smithe Tech-X Corp. USAJohn Snyder - USAValeriy Sokolov North Carolina State University USAJong-In Song Gwangju Institute of Science & Technology KoreaKen’ichiro Sonoda Renesas Technology Corp. JapanBart Soree IMEC BelgiumAlessandro Spinelli Politecnico di Milano ItalyNavin Srivastava University of California at Santa Barbara USAWilliam Stanchina University of Pittsburg USAJames Stathis IBM Corporation USAIvica Stevanovic ABB Schweiz SwitzerlandEric Stevens Eastman Kodak Company USAWilliam Stillman Rensselaer Polytechnic Institute USAAndy Strachan National Semiconductor Corporation USAAdam Strak Infineon Technologies AG AustriaRobert Street Palo Alto Reseach Center USAMichele Stucchi IMEC BelgiumJames Sturm Princeton University USAPin Su National Chiao Tung University TaiwanViswanathan Subramanian Technische Universitaet Berlin GermanyNobuyuki Sugii Hitachi Ltd. JapanToshihiro Sugii Fujitsu Compound Semiconductor Inc. JapanTakuya Suguwara Tokyo Electron Ltd. JapanYong Seok Suh New Jersey Institute of Technology USASung Dae Suk Samsung KoreaTomislav Suligoj University of Zagreb CroatiaJ. Sun The Hong Kong University of Science & Technology Hong KongLei Sun Peking University ChinaXiaowei Sun Nanyang Technological University SingaporeJordi Sune Universidad Autonoma de Barcelona SpainGuo-Ming Sung National Taipei University of Technology TaiwanVyshnavi Suntharalingam Massachusetts Institute of Technology USACharles Surya Hong Kong Polytechnic University Hong KongSagar Suthram Intel Corp. USAKunihiro Suzuki Fujitsu Laboratories Ltd. JapanEinar Sveinbjornsson University of Iceland SwedenViktor Sverdlov Technical University of Vienna AustriaBoris Svilicic University of Rijeka CroatiaAlexei Svizhenko Silvaco USAPradymna Swain Sarnoff Corporation USAAshok Swaminathan - USA



Cezary Sydlo Darmstadt University of Technology GermanyRalf Symanczyk Qimonda AG GermanyMitsuharu Tai Hitachi Ltd. JapanYu-Chong Tai California Institute of Technology USAYasuo Takahashi Hokkaido University JapanKazushige Takechi TRADIM JapanKen Takeuchi University of Tokyo JapanChristos Takoudis University of Illinois USAMassimo Tallarida Brandenburg Technical University GermanyShyue Seng Jason Tan Chartered Semiconductor MFG Ltd. SingaporeTetsu Tanaka Tohoku University JapanCher Ming Tang Nanyang Technological University SingaporeAnatoliy Taran National Aerospace University UkraineRene-Jean Tarento University of Paris 11 FranceGeoffrey W. Taylor University of Connecticut USANaoki Tega Hitachi Ltd. USAFrancois Templier CEA-LETI FranceIain Thayne University of Glasgow United KingdomAlan Theiss L-3 Communications Electron Techologies, Inc. USAAlbert Theuwissen Harvest Imaging BelgiumTrevor Thornton Arizona State University USATushar Thrivikraman Georgia Institute of Technology USALuuk Tiemeijer NXP Semiconductors The NetherlandsJulio Tinoco Universite Catholique de Louvain BelgiumAkio Toda NEC Corporation JapanEisuke Tokumitsu Tokyo Institute of Technology JapanMaria Toledano-Luque Universidad Complutense de Madrid SpainAkira Toriumi University of Tokyo JapanShuichi Toriyama Toshiba Corporation JapanReydezel Torres Torres INAOE MexicoYoshiaki Toyota Hitachi Ltd. JapanBoris Troyanovsky Design Automation USAWen-Jer Tsai Macronix International Co. Ltd. TaiwanHsing-Huang Tseng Texas State University USATseung-Yuen Tseng National Chiao Tung University TaiwanHideaki Tsuchiya Kobe University JapanBing-Yue Tsui National Chiao Tung University TaiwanYukihide Tsuji NEC Corporation JapanToshiyuki Tsutsumi Meiji University JapanAhmet Tura University of California at Los Angeles USAChing-Kuang Tzuang National Taiwan University TaiwanYukiharu Uraoka Nara Institute of Science and Technology JapanMichael Uren QinetiQ Ltd. United KingdomMatteo Valenza Universite Montpellier II FrancePouya Valizadeh Concordia University CanadaOlivier Valorge Lyon Nanotechnologie Institute FranceMark van Dal Taiwan Semiconductor Manufacturing Company BelgiumGeert Van den Bosch IMEC BelgiumMichiel van Duuren NXP Semiconductors BelgiumSven Van Elshocht IMEC BelgiumJan Van Houdt IMEC BelgiumRonald van Langevelde Philips Research The NetherlandsLode Vandamme Eindhoven University of Technology The NetherlandsVladislav Vashchenko National Semiconductor Corporation USAJuzer Vasi Indian Institute of Technology IndiaDragica Vasileska Arizona State University USA



Reinaldo Vega University of California at Berkeley USAGeorgios Vellianitis Taiwan Semiconductor Manufacturing Company TaiwanAnabela Veloso IMEC BelgiumAnne Verhulst IMEC BelgiumGiovanni Verzellesi Universita di Modena e Reggio Emilia ItalyMikhail Vexler A. F. Ioffe Physico-Technical Institute RussiaVaradarajan Vidya IBM Corporation USAJuan A. Lopez Villanueva Universidad de Granada SpainMaud Vinet CEA-LETI FranceEric Vogel University of Texas at Dallas USASorin Voinigescu University of Toronto CanadaSteven Voldman - USARolf Vollertsen Infineon Technologies USAMartin von Haartman Intel Corporation USASigurd Wagner Princeton University USAAndrew Walker Schiltron Corporation USARobert Wallace University of Texas at Dallas USAJun Wan Sandisk Coporation USABin Wang Impinj Inc. USAGrace Huiqi Wang National University of Singapore SingaporeMingxiang Wang Soochow University ChinaQi Wang Fairchild Semiconductor USASzu-Yu Wang Macronix International Co. Ltd. TaiwanXin Peng Wang IMEC BelgiumXingsheng Wang University of Glasgow United KingdomXinlin Wang IBM Corporation USAYu Wang Actel Corporation USAYun Wang Intermolecular Inc. USARainer Waser Forschungszentrum Julich GmbH GermanyTakanobu Watanabe Waseda University JapanTakashi Watanabe Brookman Lab. Inc. JapanJeremy Watling University of Glasgow United KingdomAndreas Weber Qimonda Dresden GmbH & Co. OHG GermanyOlivier Weber University of Tokyo JapanRichard Webster AFRL/SNHA USAChengqing Wei Nanyang Technological University SingaporeThomas Weiland Darmstadt University of Technology GermanyBonnie Weir LSI Corporation USAMichael Weissman University of Illinois at Urbana-Champaign USALars-Erik Wernersson Lund University SwedenDavid Whaley L-3 Communications Electron Techologies, Inc. USANicolas Wichmann IEMN DHS FrancePaul Wickboldt JEM Enterprises USALawrence Williams Ansoft Corp. USARichard Williams IBM Corporation USARobert Wittman Technical University of Vienna GermanyHei Wong City University of Hong Kong Hong KongMan Wong Hong Kong University of Science and Technology Hong KongNgai Wong The University of Hong Kong Hong KongSimon Wong Stanford University USARaymond Woo Exponent Consulting USAC. David Wright University of Exeter United KingdomJeff Wu Texas Instruments Inc. USAKe Wu Ecole Polytechnique de Montreal CanadaMeng-Chyi Wu National Tsing Hua University TaiwanWeimin Wu Arizona State University USA



You-Lin Wu National Chi-Nan University TaiwanZhang Xing Peking University ChinaHao Xiong National Institute of Standards & Technology USAHongqi Xu Lund University SwedenJun Xu Tsinghua University ChinaShuming Xu Ciclon Semiconductor Corp. USAYanzhong Xu Altera Corp. USAKojiro Yagami Sony Corporation JapanTadashi Yamaguchi Renesas Technology Corp. JapanShintaro Yamamichi NEC Corporation JapanMasanao Yamaoka Hitachi Ltd. JapanRan Yan Tyndall National Institute IrelandHyundoek Yang Samsung Electronics Co. Ltd. KoreaJian-Hong Yang Lanzhou University ChinaJihua Yang University of Florida USAWenWei Yang University of California at Berkeley USAJane Yater Motorola USAChih-Chieh Yeh Taiwan Semiconductor Manufacturing Company TaiwanYee Chia Yeo National University of Singapore SingaporeGyu-Chul Yi Seoul National University KoreaJeong-Hyong Yi Seoul National University KoreaLixin Yi Beijing Jiagtong University ChinaHaizhou Yin IBM Corporation USAHuaxiang Yin Samsung Advanced Institute of Technology KoreaDouglas Yoder Georgia Institute of Technology USAShinji Yokogawa NEC Electronics Corporation JapanJae Soo Yoo Chung Ang University South KoreaWon Jong Yoo Sungkyunkwan University KoreaJangsup Yoon SiRF Technology Inc. USAJun-Bo Yoon Stanford University USASmith Yoon MagnaChip Semiconductor Ltd. KoreaSung-Min Yoon Electr. & Telecomm. Research Institute KoreaEiji Yoshida Fujitsu Microelectronics Ltd. JapanKuniyoshi Yoshikawa Toshiba Corporation Semiconductor Company JapanChadwin Young Sematech International USABo Yu University of California at San Diego USAHongYu Yu Nanyang Technological University SingaporeLinWei Yu Ecole Polytechnique FranceZhiping Yu Institute of Microelectronics ChinaJiahui Yuan Georgia Institute of Technology USAJun Yuan IBM Corporation USAC. Patrick Yue University of California at Santa Barbara USAHirano Yuichi Renesas Technology Corp. JapanJang Gn Yun Seoul National University KoreaRownak Zaman - USAPeter Zampardi Skyworks Solutions Inc. USAXiaoling Zhai L-3 Communications Electron Techologies, Inc. USAJian Zhang Liverpool John Moores University United KingdomJon (Qingchun) Zhang CREE Research Inc. USALining Zhang Peking University ChinaQin Zhang University of Notre Dame USAShengdong Zhang Peking University ChinaShi-Li Zhang Royal Institute of Technology (KTH) SwedenWancheng Zhang Chinese Academy of Science ChinaXing Zhang Peking University ChinaYanli Zhang Lehigh University USA



Jian Zhao Rutgers-The State University of NJ USAYijie Zhao - USAXing Zhou Nanyang Technological University SingaporeYuanzhong Zhou Analog Devices Inc. USAChunxiang Zhu National University of Singapore SingaporeRonghua Zhu Freescale Semiconductor Inc. USAWeiDong Zhu St. Peters College USAPaul Zimmerman Intel Corp. BelgiumNian-Kai Zous Macronix International Co. Ltd. TaiwanPeter Zurcher Freescale Semiconductor Inc. USA

golden list of reviewers for 2009

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