gisaxs による高分子薄膜構造解析

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1 GISAXS GISAXS にににににににににににに にににににににににににに にににに にににに ににににににににににににに ににににににににににににに ににににににに ににににににに ににににに ににににに にににに にににに [email protected] tokyo.ac.jp

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GISAXS による高分子薄膜構造解析. 東京大学 大学院新領域創成科学研究科 基盤科学研究系 物質系専攻 横山英明. [email protected]. Outline. Nanocellular thin films GISAXS What can we obtain using GISAXS? Distorted Wave Born Approximation (DWBA) ‏ Quantitative analysis of nanocellular thin films using DWBA - PowerPoint PPT Presentation

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Page 1: GISAXS による高分子薄膜構造解析

1

GISAXSGISAXS による高分子薄膜構造解による高分子薄膜構造解析析

東京大学東京大学 大学院新領域創成科学研究科大学院新領域創成科学研究科基盤科学研究系基盤科学研究系 物質系専攻物質系専攻

横山英明横山英明

[email protected]

Page 2: GISAXS による高分子薄膜構造解析

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Outline

• Nanocellular thin films• GISAXS• What can we obtain using GISAXS?• Distorted Wave Born Approximation

(DWBA)• Quantitative analysis of nanocellular thin

films using DWBA• Analysis of vertically and horizontally

aligned nanosheets

Page 3: GISAXS による高分子薄膜構造解析

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Foaming

• Styrofoam– Macroscopic foam

• Macrocells• Microfoaming with supercritical carbon

dioxide– Microscopic foam

• Microcells• Target: smaller foams(cells)

– Nanofoaming• Nanocells

Page 4: GISAXS による高分子薄膜構造解析

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Accessible critical point (Tc = 31.1 & Pc = 7.4 MPa)

Tunable density & solvent quality

Environmentally friendly

High diffusivity

Supercritical Carbon Dioxide

Tc

Pre

ssur

e

Pc

Temperature

Gas

Liquid

SCFSol

id

Page 5: GISAXS による高分子薄膜構造解析

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Conventional CO2 foaming Process

Rapid depressurization Limited accessible size.> 1 m

10m

*K. A. Arora, A. J. Lesser and T. J. McCarthy Macromolecules 1998, 31, 4614-4620

Example: polystyrene

Page 6: GISAXS による高分子薄膜構造解析

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Self-assembly of block copolymers

M. W. Matsen and M. Scick, Phys. Rev. Lett. 72 , 2660 (1994).

Block Copolymers present a variety of domain structures of the order of 5 – 50 nm.

Page 7: GISAXS による高分子薄膜構造解析

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5~50 nm

Poly(styrene-block-perfluorooctylethyl methacrylate) (PS-PFMA)

Poly(methyl methacrylate-block-perfluorooctylethyl methacrylate) (PMMA-PFMA)

PFMA is soluble in SC CO2

(CO2-philic)

Block copolymer with fluorinated block

Page 8: GISAXS による高分子薄膜構造解析

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CO2 Process

Time / h

Tem

pera

ture

/ºC 60 ºC

0 ºC1 h

isobaric

Depressurization

CO2 pump

Back pressure regulator

High pressure vessel

TcP

ress

ure

Pc

Temperature

Gas

Liquid

SCFSol

id

Failed:Microcells appear

?

2 m

Page 9: GISAXS による高分子薄膜構造解析

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(A) SAXS profiles of PS-PFMA processed in 7.5-30 MPa of CO2. Domain spacing increase with pressure. (B) A schematic picture of nanofoams and PS-PFMA chains.

Structures of nanofoams

PFMA domain

PS domain

Nanocell

A B

Page 10: GISAXS による高分子薄膜構造解析

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Nanoces in thin films

70 nm

(110 nm?)

100 nm

ScCO2

pressurize

ScCO2

depressurize

Page 11: GISAXS による高分子薄膜構造解析

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Exposing cell structures by RIE

0 nm 10 nm

13 nm

15 nm

20 nm

40 nm

200 nm

Etching

Page 12: GISAXS による高分子薄膜構造解析

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Refractive index (density) is controlled by the processing pressure of CO2.

Reduction of refractive index  = porosity

0 5 10 15 20 25 301.1

1.2

1.3

1.4

1.5

1.6

Ref

ract

ive

Ind

ex

P / MPa

0.0

0.1

0.2

0.3

0.4

0.5

0.6

Vo

lum

e F

rac

tio

n o

f ce

lls

Page 13: GISAXS による高分子薄膜構造解析

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Quantitative measurement of nanocells

• Prepare a single layer of nanocells (60 nm thick film)– 2-D hexagonal lattice– inter-cell scattering is restricted in the film

plane– Foam factor of cells is 3D

• Size• Structure of block copolymers around the

voids

Page 14: GISAXS による高分子薄膜構造解析

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Grazing incident small angle X-ray scattering (GISAXS)

http://www.spring8.or.jp/wkg/BL40B2/instrument/lang-en/INS-0000001280/instrument_summary_view

Page 15: GISAXS による高分子薄膜構造解析

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GISAXS Patterns

qz

qy

Page 16: GISAXS による高分子薄膜構造解析

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Theory of GISAXS

• Reflectivity– Fresnel law

• Small Angle Scattering– Born Approximation– Fourier transform of model

• GISAXS(DWBA)– Calculate 4 beam intensities using Fresnel

law– Apply Born approximation

Page 17: GISAXS による高分子薄膜構造解析

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Distorted Wave Born Approximation (DWBA)(1)

Compute Reflectivity.......

Page 18: GISAXS による高分子薄膜構造解析

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DWBA(2)Compute scattering.......

TfT

i

Rf

Ti

Tf

Rf

Ri

Ri

Page 19: GISAXS による高分子薄膜構造解析

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Model

R1

R2

1

F

qR

Paracrystal distortion

Lattice Form factor of cells

Page 20: GISAXS による高分子薄膜構造解析

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GISAXS and DWBA

incident angle: 0.15 degree

incident angle: 0.225 degree

Page 21: GISAXS による高分子薄膜構造解析

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Interference of reflected wavesincident angle: 0.15 degree incident angle: 0.225 degree

@ critical angle @ critical angle

Page 22: GISAXS による高分子薄膜構造解析

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Model fitting

F

qR

Sphere

SCS

R1

R2

1

Page 23: GISAXS による高分子薄膜構造解析

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Self-assembly of block copolymers

M. W. Matsen and M. Scick, Phys. Rev. Lett. 72 , 2660 (1994).

Block Copolymers present a variety of domain structures of the order of 5 – 50 nm.

Page 24: GISAXS による高分子薄膜構造解析

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As cast morphologies

• Trifluorotoluene (TFT)

– Non-selective

– Cylinders oriented in the surface plane

• Hexafluorobenzene (HFB)

– Selective for PFMA

– Fat cylinders of PS oriented vertically ?

TFT Top View HFB Top View

HFB Side View

Page 25: GISAXS による高分子薄膜構造解析

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GISAXS of as-cast morphologies  

• Trifluorotoluene (TFT)

– Non-selective

– Cylinders oriented in the surface plane

• Hexafluorobenzene (HFB)

– Selective for PFMA

– Fat cylinders of PS oriented vertically ?

TFT GISAXS

HFB GISAXS

Page 26: GISAXS による高分子薄膜構造解析

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CO2 process

As-cast films CO2 processTemplated

porous films?

Page 27: GISAXS による高分子薄膜構造解析

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“Porous” structure (HFB)Standing nanosheets

200 nm

Page 28: GISAXS による高分子薄膜構造解析

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GISAXS of standing nanosheets

qy / nm-1

q z / nm

-1

-1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.510

0

101

102

103

104

105

0.10

0.15

0.20

Inte

nsi

ty, a

.u.

qy / nm

-1

Page 29: GISAXS による高分子薄膜構造解析

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Standing nanosheets

• Capillary condensation• Constraint by substrate• 22.4 nm and 20.3 nm

Top view

200 nm

Page 30: GISAXS による高分子薄膜構造解析

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“Porous” structure (TFT)stacking nanosheets

200 nm

Page 31: GISAXS による高分子薄膜構造解析

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Out of plane scattering

= 0 .20 = 0 .1 5 RT 3

TT 3

RT 2

TT 2

RT 1TT 1

Y oneda

0 1 .2-1.20 1 .2-1 .2

qy / n m - 1

qz /

nm

-1

0

1 .4

qy / n m -1

Page 32: GISAXS による高分子薄膜構造解析

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Decomposing to two components

• Stacking nanosheets

• 20.9±0.4 nm from 2/qz of two sets of peaks

0.0 0.5 1.0 1.510

2

103

104

105

106

107

108

3'

3'

2'

2'

1'

1'

= 0.15 = 0.20

1

2

3

3

2

1

Inte

nsi

ty,

a.u

.

qz / nm- 1

1,2,3

1',2',3'

Page 33: GISAXS による高分子薄膜構造解析

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Summary

• GISAXS reveals cellular structures quantitatively

• GISAXS is useful method for the analysis of thin films on substrate

• DWBA simulation is essential for quantitative analysis

Page 34: GISAXS による高分子薄膜構造解析

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Acknowledgment

• C. Dutriez, L. Li and R. Zhang (AIST)

• K. Sugiyama (TIT)

• S. Sasaki, H. Masunaga and M. Takata (JASRI)

• H. Okuda (Kyoto U.)

Page 35: GISAXS による高分子薄膜構造解析

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In plane scattering

- 1 . 5 -1 .0 - 0 . 5 0 .0 0 . 5 1 . 0 1 .5

1 0 2

1 0 3

1 0 4

1 0 5

1 0 6

1 0 7

I,

a.u

.

q

y

/ n m - 1

1 0 %

3 4 %