general description features applications1.5a step-down/step-up/inverting dc-dc converter az34063u 1...

1.5A STEP-DOWN/STEP-UP/INVERTING DC-DC CONVERTER AZ34063U

1

Jan. 2013 Rev. 1. 3 BCD Semiconductor Manufacturing Limited

Data Sheet

General Description

The AZ34063U is a monolithic switching regulatorcontrol circuit which contains the primary functionsrequired for DC-DC converters. This device consistsof internal temperature compensated reference, voltagecomparator, controlled duty cycle oscillator with activecurrent limit circuit, driver and high current outputswitch.

The AZ34063U is specifically designed as a generalDC-DC converter to be used in Step-Down, Step-Upand Voltage-Inverting applications with a minimumnumber of external components.

The AZ34063U is available in 2 packages: SOIC-8 andDIP-8.

Features

• Operation from 3.0V to 36V Input• Low Standby Current• Current Limiting• Output Switch Current to 1.5A• Output Voltage Adjustable• Operation Frequency up to 180kHz• Precision 2% Reference

Applications

· Battery Chargers· ADSL Modems· Hubs · Negative Voltage Power Supplies

Figure 1. Package Types of AZ34063U

SOIC-8 DIP-8


2


Data Sheet

Figure 2. Pin Configuration of AZ34063U (Top View)

M Package (DIP-8)

Pin Configuration

Functional Block Diagram

Figure 3. Functional Block Diagram of AZ34063U

Switch

Timing

Switch

GND

IPK Sense

VCC

Comparator Inverting Input

Collector

Capacitor

Emitter

Driver Collector

SwitchCollector

Switch Emitter

Timing Capacitor

GND

DriverCollector

IPK Sense

VCC

Comparator Inverting

Input

+

-

Ipk

B

1.25VReferenceRegulator

A

8

7

5 4

3

2

1

S

R

Q

6

IPKCTOSC

1

4

3

2

5

6

8

7

(SOIC-8)P Package

Switch

Timing

Switch

GND

IPK Sense

VCC

Comparator Inverting Input

Collector

Capacitor

Emitter

Driver Collector1

2

3

4

8

7

6

5

1

2

3

4

8

7

6

5


3


Data Sheet

Package Temperature Range Part Number Marking ID Packing

Type

SOIC-8 -40 to 85oCAZ34063UM-G1 34063UM-G1 Tube

AZ34063UMTR-G1 34063UM-G1 Tape & Reel

DIP-8 -40 to 85oC AZ34063UP-G1 AZ34063UP-G1 Tube

Circuit Type

PackageM: SOIC-8

AZ34063U -

TR: Tape and ReelBlank: Tube

P: DIP-8

Pin Number Pin Name Function

1 Switch Collector Internal switch transistor collector

2 Switch Emitter Internal switch transistor emitter

3 Timing Capacitor Timing Capacitor to control the switching frequency

4 GND Ground pin for all internal circuits

5 Comparator Inverting Input Inverting input pin for internal comparator

6 VCC Voltage supply

7 IPK SensePeak Current Sense Input by monitoring the voltage dropacross an external current sense resistor to limit the peak cur-rent through the switch

8 Driver Collector Voltage driver collector

Pin Description

Ordering Information

BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and green.

G1: Green


4


Data Sheet

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicatedunder "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periodsmay affect device reliability.Note 2: Maximum package power dissipation limits must be observed.

Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Voltage VCC 3 36 V Ambient Temperature TA -40 85 oC

Parameter Symbol Value Unit

Power Supply Voltage VCC 40 V

Comparator Input Voltage Range VIR -0.3 to 40 V

Switch Collector Voltage VC(switch) 40 V

Switch Emitter Voltage (VPIN 1=40V) VE(switch) 40 V

Switch Collector to Emitter Voltage VCE(switch) 40 V

Driver Collector Voltage VC(driver) 40 V

Driver Collector Current (Note 2) IC(driver) 100 mA

Switch Current ISW 1.5 A

Power Dissipation (TA=25oC)DIP-8

PD1.25 W

SOIC-8 780 mW

Thermal ResistanceDIP-8

θJA100 oC/W

SOIC-8 160

Operating Junction Temperature TJ 150 oCLead Temperature (Soldering, 10s) TLEAD 260 oCStorage Temperature Range TSTG -65 to 150 oCESD (Human body model) 2000 V

Absolute Maximum Ratings (Note 1)


5


Data Sheet

(VCC=5.0V, TA=-40 to 85oC, unless otherwise specified.)

Note 3: Low duty cycle pulse technique are used during test to maintain junction temperature as close to ambient temperatureas possible.Note 4: If the output switch is driven into hard saturation (non-Darlington configuration) at low switch currents (≤300mA) andhigh driver currents (≥30mA), it may take up to 2.0μs for it to come out of saturation. This condition will shorten the off timeat frequencies 30KHz, and is magnified at high temperatures. This condition does not occur with a Darlington configuration,since the output switch cannot saturate. If a non-Darlington configuration is used, the following output drive condition is rec-ommended:

Parameter Symbol Conditions Min Typ Max Unit

OSCILLATOR

Frequency fOSCVPIN5=0V, CT=1.0nF

TA=25oC 30 38 45 KHz

Charge Current ICHG VCC=5.0V to 36V, TA=25oC 30 38 45 μA

Discharge Current IDISCHG VCC=5.0V to 36V, TA=25oC 180 240 290 μA

Discharge to Charge CurrentRatio IDISCHG/ICHG Pin 7 to VCC, TA=25oC 5.2 6.5 7.5

Current Limit Sense Voltage VIPK(sense) ICHG=IDISCHG, TA=25oC 250 300 350 mV

OUTPUT SWITCH (Note 3)

Saturation Voltage,Dalington Connection VCE(sat) ISW=1.0A, Pins 1, 8 connected,

Common Emitter1.0 1.3 V

Saturation Voltage (Note 4.) VCE(sat) ISW=1.0A, RPIN8=82Ω to VCC, Forced β=20, Common Emitter

0.45 0.7 V

DC Current Gain hFEISW=1.0A, VCE=5.0V,

TA=25oC50 75

Collector Off-State Current IC(off) VCE=36V 0.01 100 μA

COMPARATOR

Threshold Voltage VTHTA=25oC 1.225 1.250 1.275

VTA=-40 to 85oC 1.21 1.250 1.29

Threshold Voltage LineRegulation REGLINE VCC=3.0V to 36V 1.4 5 mV

Input Bias Current IIB VIN=0V -20 -400 nA

TOTAL DEVICE

Supply Current ICC

VCC=5.0V to 36V, CT=1.0nF,VPIN7=VCC, VPIN5>VTH, VPIN2=GND, other pins open

4 mA

Electrical Characteristics


6


Data Sheet

Figure 4. Output Switch On-Off Time vs. Figure 5. Timing Capacitor Waveform

Typical Performance Characteristics

Oscillator Timing Capacitor

IC output ≥ 10Forced β of output switch:

* The 100Ω resistor in the emitter of the driver device requires about 7.0 mA before the output switch conducts. ICdriver - 7.0mA*

Time 20μs/DIV

Pin 1,5,8=openCT=1.0nFTA=25oC

VCC=5.0VVPIN7=VCCVPIN2=GND

Figure 6. Oscillator Frequency vs.Timing Capacitor Figure 7. Standard Supply Current vs. Supply Voltage

Electrical Characteristics (Continued)

0 5 10 15 20 25 30 35 400.5

1.0

1.5

2.0

2.5

3.0

3.5

CT=1.0nFVPIN7=VCC

VPIN2

=GND

I CC S

uppl

y C

urre

nt (m

A)

VCC Supply Voltage (V)

0.1 1 10 100

1

10

100

1000

toff

ton

VCC

=5.0VVPIN7=VCC

VPIN5=GND

TA=25OC

Ton-

off O

utpu

t Sw

itch

On-

Off

Tim

e (μ

s)

CT Oscillator Timing Capacitor (nF)

(VCC=5.0V, TA=25oC, unless otherwise specified.)

0.1 1 10 100

1

10

100

Osc

illat

or F

requ

ency

(kH

z)

CT Timing Capacitor (nF)

VCC=5.0VV

PIN7=V

CC

VPIN5=GND

TA=25OC

VO

SC O

scilla

tor V

olta

ge (V

)

2

00m

V/D

IV


7


Data Sheet

Figure 8. Emitter Follower Configuration Output Figure 9. Common Emitter Configuration Output Switch

Saturation Voltage vs. Emitter current Saturation Voltage vs. Collector Current

Figure 10. Current Limit Sense Voltage vs. Temperature

Typical Performance Characteristics (Continued)

-0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7

1.2

1.3

1.4

1.5

1.6

VCC

=5.0VVPIN1,7,8=VCCVPIN3,5=GNDTA=25OC

Sat

urat

ion

Vol

tage

(V)

Emitter Current (A)

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Darlington Connection

Forced β=20 VCC=5.0VVPIN7=VCCV

PIN2,3,5=GND

TA=25OC

Sat

urat

ion

Vol

tage

(V)

Collector Current (A)

-60 -40 -20 0 20 40 60 80 100 120 140240

250

260

270

280

290

300

Temperature (OC)

Cur

rent

Lim

it S

ense

Vol

tage

(mV)

-40 0 40 80 120 160

1.224

1.232

1.240

1.248

1.256

Feed

back

Vol

tage

(V)

Temperature (OC)

Figure 11. Feedback Voltage vs. Temperature



8


Data Sheet


Typical Performance Characteristics (Continued)

-40 0 40 80 120 160

60

80

100

120

140

Ope

ratio

n Fr

eque

ncy

(kH

z)

Temperature (oC)

VCC

=5.0VC

T=330pF

Figure 12. Operation Frequency vs. Temperature

-40 0 40 80 120 160

0.8

1.0

1.2

1.4

Sat

urat

ion

Vol

tage

(V)

Temperature (OC)

ISW

=1.0AVCC=5.0VPIN1 PIN8 Connected

Figure 13. Saturation Voltage vs. Temperature


9


Data Sheet

Typical Applications

Figure 14. Step-Up Converter (Note 5)

Note 5: This is a typical step-up converter configuration. In the steady state, if the resistor divider voltage at pin5 is greater than the voltage in the non-inverting input, which is 1.25V determined by the internal reference, theoutput of the comparator will go low. At the next swithching period, the output switch will not conduct and theoutput voltage will eventually drop below its nominal voltage until the divider voltage at pin 5 is lower than 1.25V.Then the output of the comparator will go high, the output switch will be allowed to conduct. Since VPIN5=VOUT*R2/(R1+R2)=1.25(V), the output voltage can be decided by VOUT=1.25 * (R1+R2)/R2 (V).

+

-

Ipk

B


A

5

S

R

Q

IPKCTOSC

VIN 12V

C1100μF

R3 180

CT470pF

L1 150μH

D11N5819

L2 1.0 μΗ

C3100 μFOptional

Filter

VOUT

+

+

U1 AZ34063U

R1 47kR2

2.2kC2

330 μF

28V/175mA+

Rsc0.22

6

7

8 1

2

3

4

VOUT


10


Data Sheet

Figure 15. Step-Down converter (Note 6)

Typical Applications (Continued)

+

-

Ipk

B


A

1

S

R

Q

IPKCTOSC

VIN 25V

C1100μF

Rsc0.33

L2 1.0 μH

C3100 μFOptional

Filter

5V/500mA

VOUT

D11N5819

L1220 μH

CT470 pF

+

+R1 3.6kR2

1.2k

C2470 μF

+

U1 AZ34063U

2

3

45

6

7

8

VOUT

Note 6: This is a typical step-down converter configuration. The working process in the steady state is similar tostep-up converter, VPIN5=VOUT*R2/(R1+R2)=1.25 (V), the output voltage can be decided by VOUT=1.25*(R1+R2)/R2 (V).


11


Data Sheet

Figure 16. Voltage Inverting Converter (Note 7)

Typical Applications (Continued)

Note 7: This is a typical inverting converter configuration. The working process in the steady state is similar tostep-up converter, the difference in this situation is that the voltage at the non-inverting pin of the comparator isequal to 1.25V+VOUT, then VPIN5=VOUT*R2/(R1+R2)=1.25V+VOUT, so the output voltage can be decided byVOUT=-1.25*(R1+R2)/R1 (V).

+

-

Ipk

B


A

8

S

R

Q

IPKCTOSC

VIN4.5-6V

C1100 μF

Rsc0.24

L2 1.0 μΗ

OptionalFilter

VOUT

D11N5819

L188 μΗ

+

C3100 μF+

CT470pF

R1 953R2

8.2k

C21000 μF

-12V/100mA

+

U1 AZ34063U

7

6

5 4

3

2

1

VOUT


12


Data Sheet

Mechanical Dimensions

SOIC-8 Unit: mm(inch)

0°8°

1°5°

R0.150(0.006)

R0.

150(

0.00

6)

1.000(0.039)

0.330(0.013)0.510(0.020)

1.350(0.053)1.750(0.069)

0.100(0.004)0.300(0.012)

0.900(0.035)

0.800(0.031)

0.200(0.008)

3.800(0.150)4.000(0.157)

7°

7°

20:1D

1.270(0.050) TYP

0.190(0.007)0.250(0.010)

8°

D 5.800(0.228)6.200(0.244)

0.675(0.027)0.725(0.029)

0.320(0.013)

8°

0.450(0.017)0.800(0.031)

4.700(0.185)5.100(0.201)

Note: Eject hole, oriented hole and mold mark is optional.


13


Data Sheet

Mechanical Dimensions (continued)

DIP-8 Unit: mm(inch)

4°

6°

R0.750(0.030)

0.254(0.010)TYP

0.130(0.005)MIN

8.200(0.323)9.400(0.370)

0.204(0.008)0.360(0.014)

7.620(0.300)TYP

4°

6°5°

0.700(0.028)

9.000(0.354)9.600(0.378)

3.710(0.146)4.310(0.170)

3.000(0.118)3.600(0.142)

0.360(0.014)0.560(0.022)

2.540(0.100) TYP

6.200(0.244)6.600(0.260)

3.200(0.126)3.600(0.142)

0.510(0.020)MIN

Φ3.000(0.118)Depth

0.100(0.004)0.200(0.008)

1.524(0.060) TYP

Note: Eject hole, oriented hole and mold mark is optional.

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for anyparticular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or useof any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights orother rights nor the rights of others.

- Wafer FabShanghai SIM-BCD Semiconductor Manufacturing Limited800, Yi Shan Road, Shanghai 200233, ChinaTel: +86-21-6485 1491, Fax: +86-21-5450 0008

BCD Semiconductor Manufacturing LimitedMAIN SITE

REGIONAL SALES OFFICEShenzhen OfficeShanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen OfficeAdvanced Analog Circuits (Shanghai) Corporation Shenzhen OfficeRoom E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951Fax: +86-755-8826 7865

Taiwan OfficeBCD Semiconductor (Taiwan) Company Limited4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, TaiwanTel: +886-2-2656 2808Fax: +886-2-2656 2806

USA OfficeBCD Semiconductor Corporation30920 Huntwood Ave. Hayward,CA 94544, U.S.ATel : +1-510-324-2988Fax: +1-510-324-2788

- IC Design GroupAdvanced Analog Circuits (Shanghai) Corporation8F, Zone B, 900, Yi Shan Road, Shanghai 200233, ChinaTel: +86-21-6495 9539, Fax: +86-21-6485 9673

BCD Semiconductor Manufacturing Limited

http://www.bcdsemi.com

BCD Semiconductor Manufacturing Limited

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for anyparticular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or useof any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights orother rights nor the rights of others.

- Wafer FabShanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.800 Yi Shan Road, Shanghai 200233, ChinaTel: +86-21-6485 1491, Fax: +86-21-5450 0008

MAIN SITE

REGIONAL SALES OFFICEShenzhen OfficeShanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen OfficeUnit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,China Tel: +86-755-8826 7951Fax: +86-755-8826 7865

Taiwan OfficeBCD Semiconductor (Taiwan) Company Limited4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, TaiwanTel: +886-2-2656 2808Fax: +886-2-2656 2806

USA OfficeBCD Semiconductor Corp.30920 Huntwood Ave. Hayward,CA 94544, USATel : +1-510-324-2988Fax: +1-510-324-2788

- HeadquartersBCD Semiconductor Manufacturing LimitedNo. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, ChinaTel: +86-21-24162266, Fax: +86-21-24162277

general description features applications1.5a step-down/step-up/inverting dc-dc converter az34063u 1...

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