gbpc2510

7/28/2019 GBPC2510

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GBP

C 1 2

,1

5 ,2 5

, 3 5 S E RI E

S

GBPC 12, 15, 25, 35 SERIES , Rev. C2001 Fairchild Semiconductor Corporation

GBPC 12, 15, 25, 35 SERIES

Bridge Rectifiers (Glass Passivated)

Absolute Maximum Ratings* T A = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Features

• Integrally molded heatsinkprovided very low thermalresistance for maximumheat dissipation.

• Surge overload rartingsfrom 300 amperes to400 amperes.

• Isolated voltage from caseto lead over 2500 volts.

• UL certified, UL #E96005.

Suffix "W"Wire Lead Structure

Suffix "M"Terminal LocationFace to Face

–

+

~

~

+ ~

~ –

Symbol Pa ra me te r Va lue Units0 0 5 0 1 0 2 0 4 0 6 0 8 1 0

V RR M Maximu m Repet i t ive Reverse Vol tage 50 100 200 400 600 800 1000 V

V RM S M ax i m u m R M S B r i dg e In p u t Vo l tag e 3 5 7 0 1 4 0 2 8 0 4 2 0 5 6 0 7 0 0 V

V R DC Reverse Vol tage (Rated V R ) 5 0 1 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 V

IF ( AV )

A ve ra g e R ect ifi ed F o rw ar d C u rr en t@ T A = 5 5 °C G B P C 1 2

G B P C 1 5G B P C 2 5G B P C 3 5

1 21 52 53 5

A A A A

IFS M

Non-repet i t ive Peak Forward SurgeCurrent G B P C 1 2 , 1 5 , 2 5

8 .3 ms S ingle Hal f-S ine-Wav eG B P C 3 5

30 0

40 0

A

AT st g S torage Tempe rature Range -55 to +150 °C

T J Operat ing Junct ion Tempe rature -55 to +150 °C

GBPC

GBPC-W

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GBP

C 1 2

,1

5 ,2 5

, 3 5 S E RI E

S

GBPC 12, 15, 25, 35 SERIES , Rev. C2001 Fairchild Semiconductor Corporation

Bridge Rectifiers (Glass Passivated)(continued)

Typical Characteristics

Ambient Temperature [ºC] A v e r a g e

R e c

t i f i e d F o r w a r d

C u r r e n

t , I F [ A ]

1 2 5 10 20 50 10020

50

100

200

400

Number of Cycles at 60Hz

P e a

k F o r w a r d

S u r g e

C u r r e n

t , I F

S M [ A

]

GBPC12-GBPC25

GBPC35

0.6 0.8 1 1.2 1.4 1.6 1.8 20.1

1

10

100

200

Forward Voltage, V F [V]

F o r w a r d

C u r r e n

t , I F [ A ]

Pulse Width = 300 µµµµs2% Duty Cycle

T = 25 CºA

GBPC12-GBPC15

GBPC25

GBPC35

0 20 40 60 80 100 120 1400.1

1

10

100

Percent of Rated Peak Reverse Voltage [%]

R e v e r s e

C u r r e n

t , I R [ m

A ]

T = 25 CºA

T = 125 CºA

Electrical Characteristics T A = 25°C unless otherwise noted

Symbol Parameter Device UnitsVF Forward Voltage Drop, per bridge

@ 6.0 A GBPC12@ 7.5 A GBPC15@ 12.5 A GBPC25@ 17.5 A GBPC35

1.1 V

IR Reverse Current, per leg@ rated V R T A = 25 °C

T A = 125 °C5.0500

µ Aµ A

I2t rating for fusingt < 8.3 ms GBPC12, 15, 25

GBPC35 375660

A 2Sec A 2Sec

C T Total Capacitance, per legVR = 4.0 V, GBPC12, 15, 25 f = 1.0 MHz GBPC35

180200

pFpF

Symbol Parameter Value UnitsP D Power Dissipation 83.3 W

R θJL Thermal Resistance, Junction to Lead 1.5

°C/W

Thermal Characteristics

Figure 1. Forward Current Derating CurveFigure 2. Non-Repetitive Surge Current

Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs Reverse Voltage

1 2 5 10 20 50 10020

50

100

200

400

Number of Cycles at 60Hz

P e a

k F o r w a r d

S u r g e

C u r r e n

t , I F

S M [ A

]

GBPC12-GBPC25

GBPC35

0 25 50 75 100 125 150 1750

10

20

30

40

GBPC12

GBPC15

GBPC25

GBPC35

SINGLE PHASE

HALF WAVE60Hz

RESISTIVE ORINDUCTIVE LOAD

LENGTHS

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to the

user.

2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for product development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Formative or In Design

First Production

Full Production

Not In Production

OPTOLOGIC™OPTOPLANAR™PACMAN™POP™Power247™PowerTrenchQFET™QS™QT Optoelectronics™Quiet Series™SILENT SWITCHER

FASTFASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™

Rev. H4

®

ACEx™Bottomless™CoolFET™CROSSVOLT ™DenseTrench™DOME™EcoSPARK™E 2CMOS TM

EnSigna TM

FACT™FACT Quiet Series™

SMART START™STAR*POWER™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET®

®

®

STAR*POWER is used under license

VCX™

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