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Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED High-Efficiency GaN HEMT Power Device To achieve the energy saving, downsizing for all power electronics Marketing Department Power Device Division Fujitsu Semiconductor Limited

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Page 1: GaN Power Device’s Merits - Fujitsu Global I DS[A] 20 20 R ... To achieve the energy saving, downsizing for all power electronics "High-Efficiency GaN HEMT Power Device" Author:

Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED

High-Efficiency GaN HEMT Power DeviceTo achieve the energy saving, downsizing for all power electronics

Marketing DepartmentPower Device Division

Fujitsu Semiconductor Limited

Page 2: GaN Power Device’s Merits - Fujitsu Global I DS[A] 20 20 R ... To achieve the energy saving, downsizing for all power electronics "High-Efficiency GaN HEMT Power Device" Author:

DownsizingEnergy Saving

GaN’s Merit

GaN Power Device’s Merits

Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED

Large Die SizeSi

GaN

Ele

ctro

de

Ele

ctro

de

Ele

ctro

de

Inductor Capacitor

Current Status：The capacitor andthe inductor islarge！！

More CompactEquipment Size

Much Lower Power Consumption

A smaller die size(lower resistance)even for the high

breakdown voltage

GaN’s Merit

Higher switching frequency⇒It is possible to reduce the size of

Capacitor and Inductor

Current Status：The device’s size islarge because of thehigh breakdown voltage

Ele

ctro

de

Page 3: GaN Power Device’s Merits - Fujitsu Global I DS[A] 20 20 R ... To achieve the energy saving, downsizing for all power electronics "High-Efficiency GaN HEMT Power Device" Author:

The Possible Application Fieldof GaN Power Devices

Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED

GaN Power Device can be applied in all areas of Automotive, Industrial and Consumer.

Page 4: GaN Power Device’s Merits - Fujitsu Global I DS[A] 20 20 R ... To achieve the energy saving, downsizing for all power electronics "High-Efficiency GaN HEMT Power Device" Author:

FSL’s GaN Power Device

Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED

Parameters 30V 150V 600V

Drain Current [A] 12 20 20

Threshold voltage [V] 1.8 1.8 1.8

On Resistance [mΩ] 12.5 13 92

Gate Charge [nC] 4 16 12

Package (sample) WLCSP WLCSP TO247

All products’ sample is available

Page 5: GaN Power Device’s Merits - Fujitsu Global I DS[A] 20 20 R ... To achieve the energy saving, downsizing for all power electronics "High-Efficiency GaN HEMT Power Device" Author:

GaN Power Device’sDevelopment and Mass Production

Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED

Fujitsu Semiconductor’sAizuwakamatsu PlantDesign・Evaluation・

Mass Production

Fujitsu LabsResearch and Development

Page 6: GaN Power Device’s Merits - Fujitsu Global I DS[A] 20 20 R ... To achieve the energy saving, downsizing for all power electronics "High-Efficiency GaN HEMT Power Device" Author:

2.5kW Power Supply for ICT System

Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED

80-230VAC

Inductor Output diode

Capacitor

GaN-HEMTSynchronous Rectifier

380V

DC

Page 7: GaN Power Device’s Merits - Fujitsu Global I DS[A] 20 20 R ... To achieve the energy saving, downsizing for all power electronics "High-Efficiency GaN HEMT Power Device" Author:

2.5kW Power Supply for ICT SystemGaN-HEMT vs. Si-MOSFET

Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED

GaNHEMT

MOSFET

IDS[A]

20 31

Ron[mΩ]

80 160# of

device 1 2

Higher efficiency than Si FET was confirmed

Input: 230VAC, output : 380V, Switching Frequency: 75KHz

GaN

MOS

GaN

MOS

効率

損失

Page 8: GaN Power Device’s Merits - Fujitsu Global I DS[A] 20 20 R ... To achieve the energy saving, downsizing for all power electronics "High-Efficiency GaN HEMT Power Device" Author:

Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED

High Frequency PFC Evaluation Board

Compact size due to the higher switching frequency

Page 9: GaN Power Device’s Merits - Fujitsu Global I DS[A] 20 20 R ... To achieve the energy saving, downsizing for all power electronics "High-Efficiency GaN HEMT Power Device" Author:

High Frequency PFC Evaluation BoardGaN-HEMT vs. Si-MOSFET (HV)

Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED

GaNHEMT

SiFET

IDS[A] 20 20

Ron[mΩ] 100 190

GaN power device showed higher efficiency potential at high switching frequency.

Page 10: GaN Power Device’s Merits - Fujitsu Global I DS[A] 20 20 R ... To achieve the energy saving, downsizing for all power electronics "High-Efficiency GaN HEMT Power Device" Author:

High Switching Frequency PFC Board

Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED

Page 11: GaN Power Device’s Merits - Fujitsu Global I DS[A] 20 20 R ... To achieve the energy saving, downsizing for all power electronics "High-Efficiency GaN HEMT Power Device" Author:

DC characteristics

AC characteristics

New Lineup １５０V GaN Power Device

Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED

Item Unit ValueBreakdown Voltage V 150Threshold Voltage V 1.8On - Resistance mΩ 13

Item Unit Value

Input Capacitance(Ciss) pF 950Output capacitance (Coss) pF 550Reverse transfercapacitance (Crss) pF 80

Gate charge capacity (Qg) nC 16

Compare with Si MOSFET,GaN HEMT’s FOM

is less half

13

16

Page 12: GaN Power Device’s Merits - Fujitsu Global I DS[A] 20 20 R ... To achieve the energy saving, downsizing for all power electronics "High-Efficiency GaN HEMT Power Device" Author:

Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED


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