IRG4PC40UDINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesFeaturesFeaturesFeaturesFeatures

E

G

n-ch an ne l

C

VCES = 600V

VCE(on) typ. = 1.72V

@VGE = 15V, IC = 20A

Parameter Min. Typ. Max. UnitsRθJC Junction-to-Case - IGBT ------ ------ 0.77RθJC Junction-to-Case - Diode ------ ------ 1.7 °C/WRθCS Case-to-Sink, flat, greased surface ------ 0.24 ------RθJA Junction-to-Ambient, typical socket mount ----- ----- 40Wt Weight ------ 6 (0.21) ------ g (oz)

Thermal Resistance

UltraFast CoPack IGBT

4/17/97

Absolute Maximum Ratings Parameter Max. Units

VCES Collector-to-Emitter Voltage 600 VIC @ TC = 25°C Continuous Collector Current 40IC @ TC = 100°C Continuous Collector Current 20ICM Pulsed Collector Current 160 AILM Clamped Inductive Load Current 160IF @ TC = 100°C Diode Continuous Forward Current 15IFM Diode Maximum Forward Current 160VGE Gate-to-Emitter Voltage ± 20 VPD @ TC = 25°C Maximum Power Dissipation 160PD @ TC = 100°C Maximum Power Dissipation 65TJ Operating Junction and -55 to +150TSTG Storage Temperature Range °C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations• Industry standard TO-247AC packageBenefits• Generation -4 IGBT's offer highest efficiencies available• IGBT's optimized for specific application conditions• HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's

PD 9.1467D

W

TO-247AC

IRG4PC40UD

Parameter Min. Typ. Max. Units ConditionsQg Total Gate Charge (turn-on) ---- 100 150 IC = 20AQge Gate - Emitter Charge (turn-on) ---- 16 25 nC VCC = 400V See Fig. 8Qgc Gate - Collector Charge (turn-on) ---- 40 60 VGE = 15Vtd(on) Turn-On Delay Time ---- 54 ---- TJ = 25°Ctr Rise Time ---- 57 ---- ns IC = 20A, VCC = 480Vtd(off) Turn-Off Delay Time ---- 110 165 VGE = 15V, RG = 10Ωtf Fall Time ---- 80 120 Energy losses include "tail" andEon Turn-On Switching Loss ---- 0.71 ---- diode reverse recovery.Eoff Turn-Off Switching Loss ---- 0.35 ---- mJ See Fig. 9, 10, 11, 18Ets Total Switching Loss ---- 1.10 1.5td(on) Turn-On Delay Time ---- 40 ---- TJ = 150°C, See Fig. 9, 10, 11, 18tr Rise Time ---- 52 ---- ns IC = 20A, VCC = 480Vtd(off) Turn-Off Delay Time ---- 200 ---- VGE = 15V, RG = 10Ωtf Fall Time ---- 130 ---- Energy losses include "tail" andEts Total Switching Loss ---- 1.6 ---- mJ diode reverse recovery.LE Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from packageCies Input Capacitance ---- 2100 ---- VGE = 0VCoes Output Capacitance ---- 140 ---- pF VCC = 30V See Fig. 7Cres Reverse Transfer Capacitance ---- 34 ---- ƒ = 1.0MHztrr Diode Reverse Recovery Time ---- 42 60 ns TJ = 25°C See Fig.

---- 74 120 TJ = 125°C 14 IF = 15AIrr Diode Peak Reverse Recovery Current ---- 4.0 6.0 A TJ = 25°C See Fig.

---- 6.5 10 TJ = 125°C 15 VR = 200VQrr Diode Reverse Recovery Charge ---- 80 180 nC TJ = 25°C See Fig.

---- 220 600 TJ = 125°C 16 di/dt 200A/µsdi(rec)M/dt Diode Peak Rate of Fall of Recovery ---- 190 ---- A/µs TJ = 25°C

During tb ---- 160 ---- TJ = 125°C

Parameter Min. Typ. Max. Units ConditionsV(BR)CES Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.63 ---- V/°C VGE = 0V, IC = 1.0mAVCE(on) Collector-to-Emitter Saturation Voltage ---- 1.72 2.1 IC = 20A VGE = 15V

---- 2.15 ---- V IC = 40A See Fig. 2, 5---- 1.7 ---- IC = 20A, TJ = 150°C

VGE(th) Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µAgfe Forward Transconductance 11 18 ---- S VCE = 100V, IC = 20AICES Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V

---- ---- 3500 VGE = 0V, VCE = 600V, TJ = 150°CVFM Diode Forward Voltage Drop ---- 1.3 1.7 V IC = 15A See Fig. 13

---- 1.2 1.6 IC = 15A, TJ = 150°CIGES Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V

Switching Characteristics @ T J = 25°C (unless otherwise specified)

Electrical Characteristics @ T J = 25°C (unless otherwise specified)

IRG4PC40UD

Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

1

1 0

1 0 0

1 0 0 0

4 6 8 1 0 1 2

CI

, C

olle

ctor

-to-

Em

itter

Cur

rent

(A

)

GE

T = 25°C

T = 150°C

J

J

V , Gate-to-Emitter Voltage (V)

A

V = 10V5µs PULSE WIDTH

C C

1

1 0

1 0 0

1 0 0 0

0.1 1 1 0

CE

CI

, C

olle

ctor

-to-

Em

itter

Cur

rent

(A

)

V , Collector-to-Emitter Voltage (V)

T = 150°C

T = 25°C

J

J

V = 15V20µs PULSE WIDTH

G E

A

0

1 0

2 0

3 0

0.1 1 1 0 1 0 0

f, F req ue ncy (kH z)

Loa

d C

urr

en

t (A

)

A

6 0 % o f ra te d v o lta g e

Du ty c ycle: 5 0%T = 1 2 5 °CT = 90 °CGa te d r ive a s sp e cif iedTu rn -on lo sses in clu deeffe cts of reve rse rec ov ery

sin kJ

Pow e r D issipa tion = 3 5W

IRG4PC40UD

Fig. 5 - Collector-to-Emitter Voltage vs.Junction Temperature

Fig. 4 - Maximum Collector Current vs.Case Temperature

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

1.0

1 .5

2 .0

2 .5

-60 -40 -20 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0

CE

V

,

Col

lect

or-t

o-E

mitt

er V

olta

ge (

V) V = 15V

80µs PULSE WIDTHG E

A

I = 40A

I = 20A

I = 10A

T , Junction Temperature (°C)J

C

C

C

0

1 0

2 0

3 0

4 0

2 5 5 0 7 5 1 0 0 1 2 5 1 5 0

Max

imum

DC

Col

lect

or C

urre

nt (

A)

T , Case Temperature (°C)C

V = 15V G E

A

0.01

0 .1

1

0 .00001 0 .0001 0 .001 0 .01 0 .1 1 10

t , Rectangular Pulse Duration (sec)1

thJC

D = 0 .50

0.01

0.02

0 .05

0.10

0.20

SIN GLE P ULSE(TH ER MA L R E SP ONS E )T

herm

al R

espo

nse

(Z

)

P

t 2

1t

DM

N otes: 1 . D u ty fac to r D = t / t

2 . P ea k T = P x Z + T

1 2

J D M thJC C

IRG4PC40UD

Fig. 7 - Typical Capacitance vs.Collector-to-Emitter Voltage

Fig. 8 - Typical Gate Charge vs.Gate-to-Emitter Voltage

Fig. 9 - Typical Switching Losses vs. GateResistance

Fig. 10 - Typical Switching Losses vs.Junction Temperature

0

1 0 0 0

2 0 0 0

3 0 0 0

4 0 0 0

1 1 0 1 0 0

CE

C,

Cap

aci

tanc

e (

pF)

V , Collector-to-Em itter V oltage (V)

A

V = 0V , f = 1M HzC = C + C , C S HO RTE DC = CC = C + C

G Eies ge gc ceres gcoes ce gc

C ies

C res

C oes

0

4

8

1 2

1 6

2 0

0 2 0 4 0 6 0 8 0 1 0 0 1 2 0

GE

V

, G

ate

-to

-Em

itter

Vol

tage

(V

)

gQ , Total Gate Charge (nC)

A

V = 400V I = 20A

C E

C

1.0

1.2

1 .4

1 .6

1 .8

0 1 0 2 0 3 0 4 0 5 0 6 0

G

Tota

l Sw

itchi

ng L

osse

s (m

J)

R , Gate Resistance ( Ω)

A

V = 480V V = 15V T = 25°C I = 20A

C C

G E

C

C

0.1

1

1 0

-60 -40 -20 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0

Tot

al S

wit

chin

g Lo

sses

(m

J)

R = 10Ω V = 15V V = 480V

A

I = 40A

I = 20A

I = 10A

G

G E

C C

C

C

C

T , Junct ion Temperature (°C)J

IRG4PC40UD

Fig. 11 - Typical Switching Losses vs.Collector-to-Emitter Current

Fig. 12 - Turn-Off SOA

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

1

10

100

0.8 1.2 1.6 2.0 2.4

FM

FIn

sta

nta

ne

ou

s F

orw

ard

Cu

rre

nt

- I

(

A)

Fo rward Vo ltage Drop - V (V)

T = 150°C

T = 125°C

T = 25 °C

J

J

J

1

10

100

1000

1 10 100 1000C

C E

G E

V , Collecto r-to-Em itter Voltage (V )

I ,

Col

lect

or-to

-Em

itter

Cur

rent

(A)

S A FE O P E R A TING A RE A

V = 20V T = 125°C

G EJ

0.0

1.0

2 .0

3 .0

4 .0

5 .0

0 1 0 2 0 3 0 4 0 5 0

C

Tot

al S

wit

chin

g Lo

sses

(m

J)

R = 10 Ω T = 150°C V = 480V V = 15V

G

C

C C

G E

I , Col lector-to-Emitter Current (A)

A

IRG4PC40UD

Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt

1

10

100

100 1000fd i /d t - (A /µs )

I

-

(A)

IRR

M

I = 5.0A

I = 15A

I = 30AF

F

F

V = 2 00VT = 12 5°CT = 25 °C

R

J

J

0

200

400

600

800

100 1000fd i /d t - (A/µs)

RR

Q

-

(nC

)

I = 30A

I = 15A

I = 5 .0A

F

F

F

V = 2 00VT = 12 5°CT = 25 °C

R

J

J

100

1000

100 1000fd i /dt - (A/µs)

di(

rec)

M/d

t -

(A

/µs)

I = 5 .0A

I = 15A

I = 30AF

F

F

V = 200 VT = 1 25 °CT = 2 5°C

R

J

J

20

40

60

80

100

100 1000fdi /dt - (A/µs)

t -

(ns

)rr

I = 30A

I = 15A

I = 5.0AF

F

F

V = 200VT = 125°CT = 25°C

R

J

J

IRG4PC40UD

t1

Ic

V ce

t1 t2

90% Ic10% V ce

td (o ff) tf

Ic

5% Ic

t1+ 5µ SV ce ic d t

90% V ge

+ V ge

∫E of f =

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningEoff, td(off), tf

∫ V ce ie d tt2

t1

5% V ce

IcIpkV cc

10% Ic

V ce

t1 t2

D U T V O LT A G EA N D C U R R E N T

G A T E V O LT A G E D .U .T .

+ V g10% +V g

90% Ic

trtd (on)

D IO D E R E V E R S ER E C O V E R Y E N E R G Y

tx

E on =

∫E rec =t4

t3V d id d t

t4t3

D IO D E R E C O V E R YW A V E FO R M S

Ic

V pk

10% V cc

Irr

10% Irr

V cc

trr ∫Q rr =trr

tx id d t

Same typedevice asD .U.T.

D .U .T.

430µF80%of Vce

Fig. 18a - Test Circuit for Measurement ofILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,Defining Eon, td(on), tr

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,Defining Erec, trr, Qrr, Irr

IRG4PC40UD

V g G A T E S IG N A LD E V IC E U N D E R T E S T

C U R R E N T D .U .T .

V O LT A G E IN D .U .T .

C U R R E N T IN D 1

t0 t1 t2

D.U.T.

V *c

50V

L

1000V

6000µ F 100 V

Figure 19. Clamped Inductive Load TestCircuit

Figure 20. Pulsed Collector CurrentTest Circuit

RL=480V

4 X IC @25°C0 - 480V

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

IRG4PC40UD

D im en s ion s in M il lim e te rs a nd (Inches )CONFORM S TO J EDEC OU TLIN E TO-2 47AC (TO-3P)

- D -5 .3 0 (.2 0 9 )4 .7 0 (.1 8 5 )

3 .6 5 ( .1 4 3 )3 .5 5 ( .1 4 0 )

2.5 0 ( .0 8 9)1.5 0 ( .0 5 9)

4

3 X0 .8 0 ( .0 3 1 )0 .4 0 ( .0 1 6 )

2 .6 0 ( .1 0 2 )2 .2 0 ( .0 8 7 )3 .4 0 ( .1 3 3 )

3 .0 0 ( .1 1 8 )

3 X

0.2 5 ( .0 1 0 ) M C A S

4 .3 0 ( .1 7 0 )3 .7 0 ( .1 4 5 )

- C -

2X5.5 0 ( .2 1 7)4.5 0 ( .1 7 7)

5 .5 0 (.2 17 )

0 .2 5 ( .0 1 0 )

1 .4 0 ( .0 56 )1 .0 0 ( .0 39 )

DM MB- A -

1 5 .9 0 ( .6 2 6 )1 5 .3 0 ( .6 0 2 )

- B -

1 2 3

2 0 .3 0 (.8 0 0 )1 9 .7 0 (.7 7 5 )

1 4 .8 0 (.5 8 3 )1 4 .2 0 (.5 5 9 )

2 .4 0 (.0 9 4 )2 .0 0 (.0 7 9 )

2 X

2 X

5 .4 5 ( .2 1 5 )

*

N O T E S : 1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 14 .5M , 1 98 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL LIM E T E R S (IN C H E S ). 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 4 7A C .

L E A D A S S IG N M E N T S 1 - G A T E 2 - C O L L E C T O R 3 - E M IT T E R 4 - C O L L E C T O R

* LO N G E R LE A D E D (2 0m m ) V E R S IO N A V A IL A B L E (T O -2 47 A D )T O O R D E R A D D "-E " S U F F IXT O P A R T N U M B E R

Case Outline TO-247AC

Notes:Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature

(figure 20)

VCC=80%(VCES), VGE=20V, L=10µH, RG= 10Ω (figure 19)

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

Pulse width 5.0µs, single shot.

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IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371http://www.irf.com/ Data and specifications subject to change without notice. 4/97