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    Future Projects onMI Instrument

    May 1, 2006

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    Ul

    timate Goal

    While experiments done on ourUHV/LTSTM provide great insight into chemical

    systems, the operating conditions are notpractical for real world application. The advantages of the MI instrument is

    that it works in an ambient environment(i.e. room temp. and at 1 atm.), whichallows for easy application to industrialprocessing conditions.

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    In situ ST

    M We are unable to achieve

    atomic resolution (except forHOPG) on the MI instrumentdue to the ease with which the

    metal surface can becomecontaminated in air(hydrocarbons and water).

    Sonnenfield and Hansma in1986 were the first to use STMto study a surface immersed ina liquid.1

    In 1990, Magnussen et al.achieved atomic resolution ona metal surface.1

    Figure from Ref. 2

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    D

    evel

    opment of In Situ ST

    M Depended on three advances1:

    The development of the STM by Binnig and Rohrer

    The development of surface preparation methods inambient conditions.

    The development of methods and materials to coatthe STM tip and to couple the STM with a

    biopotentiostat.This technique provides information on surface

    processes such as phase transitions in adlayers on amolecular and atomic level.

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    Comparing UHV and In Situ

    Images of Au (herringbones)

    Image of Au(111) under 0.1 MHClO4 solution1

    Image of Au(111) underUHV

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    Comparing UHV and In Situ

    Images of Au (atomic res.)

    Flame-annealed Au(111) underclean mesitylene3

    Image of Au(111) underUHV

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    Comparing Ambient and In Situ

    Images ofHOPG

    Image ofHO

    PG underphenyloctane2Image ofHOPG in air

    File: 3-9-06HOPG009

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    Comparing Ambient and In Situ

    Images of Molecules on Au

    L-cyseteine molecules on Au(111)under perchlorate solution4

    C10, C12 SAM on Au(111) in air

    File: 3-15-06AuMicaSAMVap028

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    El

    ectroch

    emistry in ST

    M Schematic of a sample molecule

    coadsorbed with referencemolecules on a substrate asprobed by an STM tip.

    RE and CE represent thereference and counter electrodes,respectively.

    Vsub and Vbias are the substratepotential (with respect to thereference electrode) and the tip-substrate bias voltage,respectively, which are controlledindependently by a bipotentiostat.5

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    El

    ectroch

    emistry in ST

    M Because the charge transfer event central to

    electrochemical reactivity occurs within a fewatomic diameters of the electrode surface, thedetailed arrangement of atoms and molecules atthis interface strongly controls the correspondingelectrochemical activity1.

    Cycling the potential causes significant changes

    in th

    e surface topograph

    y, from ch

    angingh

    owmolecules adsorb to the surface to causingreconstructions of the metal atoms themselves.

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    Insul

    atingT

    ips Because the faradaic background from a bare

    metal wire immersed in solution can approach

    several

    mill

    iamps of current wh

    il

    e tunnel

    ingcurrents are typically on the order of nanoamps,the STM tip must be insulated.

    The tip is insulated by coating all but the very

    end with

    an insul

    ator so th

    at th

    e tunnel

    ingcurrent will not be overcome by theelectrochemical background.1

    A variety of materials may be used to coat thetip, specifically wax and nail polish.

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    T

    ipE

    tch

    ing Extremely sharp tips withlow aspect ratios

    are prepared by chemically etching the tip

    in a 1 M basic solution (KOH). The etching current, which depends on the

    area of immersed wire and applied voltage

    is adjusted to an initial value. This process produces a neck shape near

    the air-solution interface.6

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    T

    ipE

    tch

    ing As the etching proceeds,

    the neck-like regionbecomes thinner and

    thinner, and eventuallythe lower portion dropsoff.

    This causes an abruptdecrease in the current.

    A very sh

    arp tip with

    asmall protrusion at theend can be made byswitching off the circuit asthe current abruptlydrops.6

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    W

    ax Insul

    ation ofT

    ips Most common method uses Apiezon-brand wax The sharp etched tips are mounted vertically on

    a manipul

    ator. A copper plate is heated and used to melt thewax.

    A rectangular slit in the plate provides atemperature gradient for the melted wax.

    The tip is brought from underneath the slit bymeans of the manipulator.6

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    W

    ax Insul

    ation ofT

    ips The tip is first moved slowly into the hot

    wax and allowed to attain a thermal

    equilibrium and uniform wetting. The tip is then raised through the wax and

    allowed to break the top surface region ofthe melt.

    The tip is moved sideways out of the slitso as to leave the very end of the tipunperturbed.6

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    Procedure forWax Insulation of

    Tips

    From Ref. 6

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    Images ofW

    axC

    oatedT

    ips

    SE

    M image ofEC

    ST

    M tips, insul

    ated with

    doubl

    e (a

    ) andsingle (b) pulling methods7

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    N

    ail

    Pol

    ish

    Insul

    ation ofT

    ips Multiple articles cited using nail polish to

    coat their tips, however the exact coating

    procedure could not be found.

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    Reconstructions Metal surfaces in UHV reconstruct in order

    to minimize their surface energy. The extent of reconstruction is strongly

    dependent on the work function of themetal.

    Th

    e el

    ectroch

    emical

    environment offers anopportunity to systematically vary theelectronic state of a surface, through theapplication of potential and the influence of

    adsorbed species in solution.1

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    Adsorption

    Adsorption induces changes in the workfunction modifications of the surface dipolarlayer

    particularly if significant charge transfer occursbetween the adsorbate and surface

    measurements of yield critical information

    on the degree of charge reorganization uponadsorption

    = adsorbate covered - clean

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    Au Reconstructions Reconstructions can be removed electrochemically by

    placing the electrode at sufficiently positive potential. The removal of reconstruction can be attributed to the

    adsorption of electrolyte anions at higher potentials. Cycling the potential to a region where the herringbone

    reconstruction is removed and then back revealschanges in the shape of the step edges on the surface,showing that the extra material required in thecompressed structure is taken from and returns to thestep edges.1

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    Images of Au Reconstructions

    TypicalAu(111) 23 X 3 reconstruction pattern.The image was obtained for Au under purewater at 0 mV.8

    Typical image of Au(111) after thetransformation. The image was obtained for Auunder water after the surface potential was

    raised to 400 mV.8

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    Sul

    fate on Au (111) Sulfate is known to form a (3 x 7)R19.1 structure on

    Au(111) The coadsorption ofH3O+ ions is necessary to stabilize

    the ordered oxoanion adlattices. Both species in H2SO4, sulfate (10%) and bisulfate

    (90%) have 3 free oxygen atoms to interact with thesurface. The distance between them (2.47 ) is of thesame order of magnitude as the distance between Auatoms (2.88 ), so their geometrical arrangementmatches that of the Au (111) surface.9

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    Sul

    fate on Au (111) The reason for the presence of non-

    uniform anion-anion distances is the

    formation ofH-bridge bonds between theoxygen atoms of the oxoanions and thecoadsorbed H3O+ ions.9

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    Images of Sul

    fate on Au(111) In situ STM image (10x10 nm2) of a

    Au(111) electrode in 0.1 M H2SO4showing both the (3 x 7)R19.1sulfate structure, (upper and lower

    parts) and the (1x1) substrate (middlepart).

    The potential was switched from 0.80to 0.65 V and then back to 0.80 V atthe points marked by the arrows.

    The triangles and circles drawn on themiddle part of the image represent thepositions of the sulfate and hydroniumions, respectively.9

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    Images of Sul

    fate on Au(111) (B) Model of the(3 x

    7)R19.1 sulfatestructure on Au(111) in

    0.1 M H2SO4 The H3O+ ions are placed

    on top of the Au atoms. Every H3O+ adsorbed can

    form 3 H-bridge bondswith the oxygen atoms ofsurrounding sulfate ions.9

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    Intro.T

    oC

    ycl

    icV

    ol

    tammetry The voltage is swept

    between two values

    at a fixed rate, whenthe voltage reachesV2 the scan isreversed and the

    voltage is swept backto V1.11

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    Intro.T

    oC

    ycl

    icV

    ol

    tammetry In the forward sweep, as the voltage is swept

    further to the right (to more reductive values) acurrent begins to flow and eventually reaches apeak before dropping. To rationalize thisbehavior we need to consider the influence ofvoltage on the equilibrium established at theelectrode surface. If we consider electrochemicalreduction, the rate of electron transfer is fast incomparison to the voltage sweep rate.11 (i.e.Fe3+ Fe2+)

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    Intro.T

    oC

    ycl

    icV

    ol

    tammetry When the scan is

    reversed we simply moveback through the

    equilibrium positionsgradually convertingelectrolysis product backto reactant.(Fe2+ Fe3+)The current flow is now

    from the solution speciesback to the electrode andso occurs in the oppositesense to the forwardsweep.11

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    Cyclic voltammogram of Au(111) in

    0.1 M H2SO4 The peak at 0.55 V is

    attributed to the lifting ofthe (23 x 3)

    reconstruction th

    at takesplace in the lowerpotential region.

    The two sharp peaksaround 1.0 V are due tothe formation of an

    ordered sulfate structureat more positivepotentials.10

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    UnderpotentialDeposition

    The electrodeposition of a metal on a foreignmetal at potentials less negative than theequilibrium potential of the deposition reaction.

    Such a process is energetically unfavorable andit can occur only because of a strong interactionbetween the two metals, with their interactionenergy changing the overall energetics tofavorable. Consequently, only one (very seldomtwo) monolayer can be deposited this way, andthis is a very convenient way to produce well-controlled monolayer deposits.12

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    UnderpotentialDeposition

    Upd monolayers are formed by the deposition oflow work function metals onto high work functionmetals.

    The monolayer originates from a relativelystrong adatom-substrate bond formed using lessenergy than required for adatom-adatom bondsformed during bulk deposition.

    One of the most intriguing aspects of upd is theanion dependence, which derives fromcoadsoprtion of the anion and the adatom.1

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    UnderpotentialDeposition ofCu on

    Au (111) One of the first examples of atomic

    resolution in the electrochemical

    environment was Cu monolayers on Au(111) in H2SO4.

    Three different structures are seen before

    bulk Cu deposition.1

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    Images ofUnderpotential

    Deposition ofCu on Au (111) At positive potentials

    (+300 mV), the bare

    Au(111) surface isseen.1

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    Images ofUnderpotential

    Deposition ofCu on Au (111) Ordered adlayer with

    (3 x 3)R30

    structure, ascribed tocoadsorbed sulfate.

    Formed between 200and 100 mV.1

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    Images ofUnderpotential

    Deposition ofCu on Au (111) FullCu monolayer in

    registry (1x1) with

    Au(111).1 At 5 mV

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    UnderpotentialDeposition ofCu on

    Au (111) Different solutions of anions give rise to different

    structures on the electrode surface.

    Cl- anions form both (2 x 2) and (5 x 5)incommensurate structures depending on theconc. of the anion.

    On otherlow Miller index faces of Au, Cu doesnot exhibit the pronounced dependence on thetype and conc. of anion.1

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    Conclusions

    In situ STM allows for atomic resolution under ambientconditions.

    Electrochemical STM can be used to understand theelectrochemical double layer and to correlate detailedstructure of the electrode surface with the double-layerstructure and ultimately with electrochemical response.

    Studies of the upd processes reveal a rich structural andreactive chemistry, the detailed nature of which isdependent on potential, available anions, substrateorientation, and substrate identity.1

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    References

    1) Gewirth, A. A.; Niece, B. K. Chem. Rev. 1997, 97, 1129-1162.2) De Feyter, S.; Gesquiere, A.; Abdel-Mottaleb, M. M.; Grim, P. C.; De Schryver, F. C.; Meiners,

    C.; Sieffert, M.; Valiyaveettil, S.; Mullen, K. Acc. Chem. Res. 2000, 33, 520-531.3) Han, W.; Li, S.; Lindsay, S. M.; Gust, D.; Moore, T. A.; Moore, A. L. Langmuir. 1996, 12, 5742-

    5744.4) Dakkouri, A. S.; Kolb, D. M.; Edelstein-Shima, R.; Mandler, D. Langmuir. 1996, 12, 2849-2852.5) Tao, N. J. Phys. Rev. Lett. 1996, 76, 4066-4069.6) Nagahara, L. A.; Thundat, T.; Lindsay, S. M. Rev. Sci. Instrum. 1989, 60, 3128-3130.7) Kazinczi, R.; Szocs, E.; Kalman, E.; Nagy, P. Appl. Phys. A. 1998, 66, S535-S538.8) Tao, N.J.; Lindsay, S. M. J. Appl. Phys. 1991, 70, 5141-5143.9) Cuesta, A.; Kleinert, M.; Kolb, D. M. Phys. Chem. Chem. Phys. 2000, 2, 5684-5690.10) Climent, V.; Coles, B. A.; Compton, R. G. J. Phys. Chem. B 2001, 105, 10669-10673.

    11) http://www.cartage.org.lb/en/themes/sciences/Chemistry/Electrochemis/Electrochemical/CyclicVoltammetry/CyclicVoltammetry.htm

    12) http://www.corrosion-doctors.org/Dictionary/Dictionary-U.htm