frequency cavity pulling induced by a single semiconductor ...4 instituto de f sica, universidade...

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Frequency cavity pulling induced by a single semiconductor quantum dot. Daniel Valente 2,4 , Jan Suffczy´ nski 1,3 , Tomasz Jakubczyk 3 , Adrien Dousse 1 , Aristide Lemaˆ ıtre 1 , Isabelle Sagnes 1 , Lo¨ ıc Lanco 1 , Paul Voisin 1 , Alexia Auff` eves 2 , * and Pascale Senellart 11 CNRS-LPN Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis, Francee 2 CEA/CNRS/UJF joint team “Nanophysics and Semiconductors”, Institut N´ eel-CNRS, BP 166, 25 rue des Martyrs, 38042 Grenoble Cedex 9, France 3 Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Ho ˙ za 69, PL-00-681 Warszawa, Poland and 4 Instituto de F´ ısica, Universidade Federal de Mato Grosso, Cuiab´ a MT, Brazil We investigate the emission properties of a single semiconductor quantum dot deterministically coupled to a confined optical mode in the weak coupling regime. A strong pulling, broadening and narrowing of the cavity mode emission is evidenced when changing the spectral detuning between the emitter and the cavity. These features are theoretically accounted for by considering the phonon assisted emission of the quantum dot transition. These observations highlight a new situation for cavity quantum electrodynamics involving spectrally broad emitters. Progresses in nanotechnologies allow to efficiently cou- ple solid-state optical resonators such as dielectric cavi- ties or plasmonic antennas to artificial atoms like NV cen- ters in diamond [1], nanocrystals [2] or semi-conductor quantum dots [3–5]. Such optical media benefit from strong light-matter interaction and show single photon sensitivity [6–10], opening the path to scalable quantum information processing on chip. However, despite their similarities with real atoms, artificial ones show very dif- ferent emission properties, due to their coupling to the solid-state environment they are embedded in, whether phononic [11–13] or electrostatic [14–16]. This strong in- teraction leads to a broadening of the emission line which can eventually overcome the cavity line. Although this ”bad emitter regime” has been mostly considered a drawback for practical purposes, recent works have suggested that it could be a resource for quantum light generation. Indeed, coupling a spectrally broadened emitter to a high quality factor resonator in- duces Purcell enhancement of mechanisms resonant with the mode, leading to the intense emission of photons at the resonator frequency, even when the detuning between the mode and the emitter is large. This ”cavity-feeding” effect has been extensively studied for semiconductor quantum dots (QDs) [17–20] and has been proposed to build wavelength stabilized single photon sources [21] or single emitter based lasers [22]. Very recently, these ideas have been exploited to demonstrate a narrowband tun- able single photon source at room temperature with a NV center coupled to an optical fiber based cavity [23]. From the fundamental point of view, this bad emitter limit allows exploring a situation for cavity quantum elec- trodynamics not investigated with real atoms so far. In this framework, semiconductor self-assembled QDs are particularly interesting objects. Recent progresses in technology have allowed to prepare the ideal system of a single QD presenting a controlled coupling with a single mode optical resonator [5, 24]. In the present work, we study the emission of a QD deterministically coupled to a pillar cavity mode of low quality factor and evidence a new effect appearing in this bad emitter regime. Phonon assisted emission leads to a pulling of the cavity emis- sion toward the QD line as well as broadening or nar- rowing depending on the QD-cavity detuning. These ob- servations present similarities with the well-known cavity pulling effect in lasers with thousands of atoms [25–28]. They are here attained with a single emitter in the weak coupling regime. We study the emission of single InGaAs QDs inserted in GaAs/AlGaAs micropillar cavities and present experi- mental results on two QD-pillars cavities, both operating in the weak coupling regime. The first pillar has been obtained without a deterministic technology: it embeds several QDs including QD1 close to spectral resonance with the cavity mode but not located at the maximum of the electric field. The second pillar has been determinis- tically fabricated using the in-situ lithography technique. It embeds QD2, close to spectral resonance with the cav- ity mode, located within 50 nm from its center, ensuring an optimal Purcell effect (see reference [24] for details on the pillars fabrication). Each pillar is non-resonantly excited in the continuous wave regime at 800 nm. The photoluminescence signal is collected from the top of the pillar and analyzed with a spectrometer with a 50-100 μeV spectral resolution. Figure 1b shows the emission spectra as a function of temperature and energy for the cavity non deterministi- cally coupled to QD1. Spectrally narrow emission lines with a strong energy dependence on temperature arise from the QD emission. The broader line presenting a

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Page 1: Frequency cavity pulling induced by a single semiconductor ...4 Instituto de F sica, Universidade Federal de Mato Grosso, Cuiab a MT, Brazil We investigate the emission properties

Frequency cavity pulling induced by a single semiconductor quantum dot.

Daniel Valente2,4, Jan Suffczynski1,3, Tomasz Jakubczyk3, Adrien Dousse1, Aristide Lemaıtre1,

Isabelle Sagnes 1, Loıc Lanco1, Paul Voisin1, Alexia Auffeves2,∗ and Pascale Senellart1†

1 CNRS-LPN Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis, Francee

2 CEA/CNRS/UJF joint team “Nanophysics and Semiconductors”,Institut Neel-CNRS, BP 166, 25 rue des Martyrs, 38042 Grenoble Cedex 9, France

3 Institute of Experimental Physics, Faculty of Physics,University of Warsaw, Hoza 69, PL-00-681 Warszawa, Poland and

4 Instituto de Fısica, Universidade Federal de Mato Grosso, Cuiaba MT, Brazil

We investigate the emission properties of a single semiconductor quantum dot deterministicallycoupled to a confined optical mode in the weak coupling regime. A strong pulling, broadening andnarrowing of the cavity mode emission is evidenced when changing the spectral detuning betweenthe emitter and the cavity. These features are theoretically accounted for by considering the phononassisted emission of the quantum dot transition. These observations highlight a new situation forcavity quantum electrodynamics involving spectrally broad emitters.

Progresses in nanotechnologies allow to efficiently cou-ple solid-state optical resonators such as dielectric cavi-ties or plasmonic antennas to artificial atoms like NV cen-ters in diamond [1], nanocrystals [2] or semi-conductorquantum dots [3–5]. Such optical media benefit fromstrong light-matter interaction and show single photonsensitivity [6–10], opening the path to scalable quantuminformation processing on chip. However, despite theirsimilarities with real atoms, artificial ones show very dif-ferent emission properties, due to their coupling to thesolid-state environment they are embedded in, whetherphononic [11–13] or electrostatic [14–16]. This strong in-teraction leads to a broadening of the emission line whichcan eventually overcome the cavity line.

Although this ”bad emitter regime” has been mostlyconsidered a drawback for practical purposes, recentworks have suggested that it could be a resource forquantum light generation. Indeed, coupling a spectrallybroadened emitter to a high quality factor resonator in-duces Purcell enhancement of mechanisms resonant withthe mode, leading to the intense emission of photons atthe resonator frequency, even when the detuning betweenthe mode and the emitter is large. This ”cavity-feeding”effect has been extensively studied for semiconductorquantum dots (QDs) [17–20] and has been proposed tobuild wavelength stabilized single photon sources [21] orsingle emitter based lasers [22]. Very recently, these ideashave been exploited to demonstrate a narrowband tun-able single photon source at room temperature with aNV center coupled to an optical fiber based cavity [23].

From the fundamental point of view, this bad emitterlimit allows exploring a situation for cavity quantum elec-trodynamics not investigated with real atoms so far. Inthis framework, semiconductor self-assembled QDs areparticularly interesting objects. Recent progresses in

technology have allowed to prepare the ideal system of asingle QD presenting a controlled coupling with a singlemode optical resonator [5, 24]. In the present work, westudy the emission of a QD deterministically coupled toa pillar cavity mode of low quality factor and evidence anew effect appearing in this bad emitter regime. Phononassisted emission leads to a pulling of the cavity emis-sion toward the QD line as well as broadening or nar-rowing depending on the QD-cavity detuning. These ob-servations present similarities with the well-known cavitypulling effect in lasers with thousands of atoms [25–28].They are here attained with a single emitter in the weakcoupling regime.

We study the emission of single InGaAs QDs insertedin GaAs/AlGaAs micropillar cavities and present experi-mental results on two QD-pillars cavities, both operatingin the weak coupling regime. The first pillar has beenobtained without a deterministic technology: it embedsseveral QDs including QD1 close to spectral resonancewith the cavity mode but not located at the maximum ofthe electric field. The second pillar has been determinis-tically fabricated using the in-situ lithography technique.It embeds QD2, close to spectral resonance with the cav-ity mode, located within 50 nm from its center, ensuringan optimal Purcell effect (see reference [24] for detailson the pillars fabrication). Each pillar is non-resonantlyexcited in the continuous wave regime at 800 nm. Thephotoluminescence signal is collected from the top of thepillar and analyzed with a spectrometer with a 50-100µeV spectral resolution.

Figure 1b shows the emission spectra as a function oftemperature and energy for the cavity non deterministi-cally coupled to QD1. Spectrally narrow emission lineswith a strong energy dependence on temperature arisefrom the QD emission. The broader line presenting a

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FIG. 1. a: System under investigation: a single QD is cou-pled to the confined optical mode of a micropillar cavity. Theemission from the cavity channel is measured. We study twopillars: the first one embeds QD1 non deterministically cou-pled to the mode, whereas the second one is deterministicallyand optimally coupled to QD2. Both pillars operate in theweak coupling regime. b: Emission spectra measured for var-ious temperatures on QD1, presenting a poor coupling to thepillar mode. The two narrow emission lines corresponds tothe single QD emission lines and the broad emission to thecavity mode. The red and blue lines are lorentzian fits to theexperimental data. c-e: Characteristics of the QD and cavitysystem deduced from emission spectroscopy: Energy (c), In-tensity (d) and Linewidth (e) of the QD (black) emission lineand the cavity (red) emission line.

smaller energy variation with temperature correspondsto the emission within the cavity mode. This emissionobserved even when the detuning between the QD andthe mode is large is the so-called ”cavity feeding”[17, 18],namely the Purcell enhancement of broadband ”back-ground” emission. When several QDs are inserted in thecavity without deterministic positioning, this emissionpartially arises from non resonant QDs [17, 19] whichbehave as internal white sources and allow to measurethe intrinsic characteristics of the mode. The propertiesof the QD1-cavity system are extracted by routinely fit-ting the experimental curves with a sum of two lorentzianpeaks, one for the QD lines (blue), the other for the cav-ity emission line (red). The line positions, intensitiesand linewidths are shown as a function of temperaturein figure 1c. The QD and cavity emission lines contin-uously shift to lower energies with temperature. TheQD emission slightly increases at resonance because of asmall Purcell effect while the cavity line intensity doesnot show changes related to the QD resonance. Last, thecavity linewidth slightly varies across the resonance, butonly in the range of 20%. Note that in all experimentsreported here, the measured QD emission linewidth is

limited by the experimental setup resolution.

Figure 2 reports significantly different features, ob-served on the deterministically coupled QD2-cavity de-vice. Figure 2a shows the emission intensity as a functionof energy and temperature for QD2 where three emis-sion lines (charged exciton (CX), neutral exciton (X) andbiexciton (XX)) are successively brought into resonancewith the cavity mode through temperature tuning. Fig-ure 2b and 2c present two emission spectra for two de-tunings (vertical white lines in figure 2a) where a cavityemission linewidth differing by almost a factor 2 is ob-served, showing a strong dependence of the mode prop-erties on the QD transitions-cavity detuning.

This dependence is confirmed in figure 2d-f present-ing the emission properties deduced by fitting each spec-trum by a sum of lorentzian peaks. We only plot thefit results for detunings where the two lines are well re-solved spectrally. Unlike in Fig. 1c, the mode energydisplays a S-like temperature dependence (figure 2d) inbetween two spectral resonance between the QD tran-sition line. Figure 2e presents the spectrally integratedintensity emission of the QD and cavity lines. For eachspectral resonance, the increase in the QD emission in-tensity corresponds to a significant decrease of the modeintensity. Finally, the cavity emission linewidth shownin figure 2f presents strong variations with detuning, ex-ceeding a factor 2.5: the cavity line is broader when themode stands in between two QD lines.

Observing these new features has been made possiblethanks to a full control in the QD-cavity coupling: thecavity distortion is observed on every deterministicallycoupled QD-pillar device [24] with quality factor around1000-5000, the lower the Q, the larger the distortion. Inan ideally coupled QD-cavity system, the cavity emissionis expected to arise mostly from phonon sidebands in thesmall detuning range [29]. In the following, the emissionspectra of a single QD exciton weakly coupled to a cav-ity mode and to the phonon bath continuum [29, 30] iscalculated using Fermi’s golden rule. Contrary to recentworks [31, 32], no direct incoherent pumping of the modeis introduced: we show that the cavity distortion indeedarises from cavity pulling effects when the QD phononsidebands mainly participate to cavity feeding.

The coupling of a QD discrete state to acousticphonons leads to the appearance of emission sidebandswhich spread over a few meV spectral range [12, 13].They result from the emission of a photon assisted byacoustic phonon emission or absorption. The initial stateis the excited quantum dot with a given thermal distri-bution for the acoustic phonon bath. It decays towardsa continuum of electromagnetic and phononic modes.The emission spectrum SQD(ω, T ) of a QD in bulk attemperature T is analytically calculated by exact diago-nalization of the independent boson model Hamiltonian(see supplementary materials). At low temperatures, thespontaneous emission spectrum is given by SQD(ω, T ) =

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FIG. 2. a: Emission intensity as a function of energy and temperature for the pillar coupled to QD2. b,c: emission spectraextracted from the temperature flow presented in a, corresponding to the two vertical white lines. Black symbols: experimentalpoints. Black lines: fit with the sum of three lorentzian peaks. Red line: cavity peak. Blue lines: CX and XX peaks. d-f:Characteristics of the QD2-pillar device deduced by fitting the spectra with sums of lorentzian peaks: Energy (top), Intensity(middle) and linewidth (bottom) of the QD (black) emission line and the cavity (red) emission lines. The QD linewidth whichis below the spectral resolution for all temperature is not shown. g: Calculated energies of the apparent QD (black) and mode(red) lines as a function of temperature. The red dotted line in the bare cavity mode energy. h: Normalized emission intensityof the QD line (black) and the mode line (red) as a function of temperature. i: Calculated width of the apparent cavity line asa function of temperature.

ΓZPL(ω) + Γ1PL(T, ω). The first term ΓZPL(ω) describesthe QD zero-phonon line (ZPL), proportional to a Diracdelta function, which is phenomenologically substitutedhere by a lorentzian. The second term accounts for thetemperature dependent one phonon line (1PL), given byΓ1PL(T, ω) = (n(ω, T ) + 1)Γ1PL(ω) + n(ω, T )Γ1PL(ω),where the first term corresponds to the emission of aphonon and the second term to absorption. Γ1PL(ω) isthe one phonon line at zero temperature, Γ1PL(ω) its mir-ror function with respect to the ZPL central energy andn(ω, T ) is the Bose-Einstein average number of phononswith frequency ωq = ω0 − ω.

When inserted in a cavity, the QD interact withan ensemble of electromagnetic mode whose density isgiven by the cavity normalized spectrum Scav(ω) =κ2π [(κ/2)2 + (ωc − ω)2]−1, where κ is the bare cavitylinewidth and ωc its frequency. The normalized spon-taneous emission spectrum of the QD weakly coupledto a cavity is S(ω) = Scav(ω) × SQD(ω, T )/Γ whereΓ =

∫dω Scav(ω) SQD(ω, T ). S(ω) is obtained exper-

imentally by collecting the emission through the cavitychannel (Fig.1a). The emission spectrum presents two

terms arising from the QD ZPL and 1PL. Since the cavitylinewidth is much larger than the ZPL linewidth, the firstterm is given by Scav(ω) × ΓZPL(ω) ≈ ΓZPL(ω). It cor-responds to the QD like emission line in the experiment.The second term stems from the QD phonon sidebandfiltered by the cavity mode Scav(ω) × Γ1PL(T, ω). It isthis term that gives rise to the cavity like emission, whosebehavior is now theoretically analysedIt corresponds tothe cavity like emission in the experiment.

Figure 3a shows the calculated spectra for a cavitymode with quality factor Q=1000, positively detuned by1 meV from the QD ZPL, at 40 K. The green line in figure3a presents the QD emission spectrum SQD(ω, T ). Themain peak corresponds to the ZPL. The phonon sidebandis almost symmetrical on both sides of the ZPL becausea significant phonon population. The red line representsthe cavity spectrum Scav(ω, T ). The black curve is thecalculated emission spectrum S showing two peaks witha cavity emission line pulled toward the QD line. More-over, the cavity emission linewidth is significantly nar-rower than the bare cavity spectrum.

To elucidate the influence of various parameters on

Page 4: Frequency cavity pulling induced by a single semiconductor ...4 Instituto de F sica, Universidade Federal de Mato Grosso, Cuiab a MT, Brazil We investigate the emission properties

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FIG. 3. Cavity pulling induced by the QD phonon bath: a:Calculated emission spectra for a QD-cavity detuning of 1meV at 40K for a bare cavity of Q=1000. Green line: calcu-lated emission spectrum SQD of the QD state coupled to thephonon bath. Red line: cavity spectral function Scav. Blackcurve: calculated emission spectrum S of the coupled QD-cavity system. b-d: Calculated emission characteristic for thecavity emission line as a function of detuning with the QDline for T=20K. b: Energy of the cavity line with respect tothe QD energy. c: Intensity of the cavity line d: Linewidthof the cavity line (log scale). Three bare cavity quality fac-tors are considered: Q=1000 (black), Q=3000 (red), Q=5000(green). In b, the case of Q=5000 is not shown for clarityand the black (resp. blue) solid line is the bare QD (resp.cavity) frequency. The dotted lines are the linear approxima-tions (equation 1). In d, the horizontal lines show the barecavity linewidth. Lines in c are the normalized intensity ofthe cavity-filtered 1PL:

∫Scav(ω) × Γ1PL(T, ω)dω/Γ .

the cavity distortion, S is calculated as a function ofthe detuning. The apparent cavity energy, intensity andlinewidth are extracted from a multi-lorentzian fit tomimic the experimental procedure. Figure 3c presentsthese parameters as a function of detuning for three barecavity quality factors Q = ωc/κ. The displaced modeenergy is plotted with respect to the QD ZPL. The blueline represents the bare cavity mode. Figure 3b showsthat the cavity emission is pulled toward the QD energy.This pulling is strongest when the mode Q is low.

It can be shown that the emission maximum is ob-tained at a frequency given by

κ ωQD + κ1PL ωcκ+ κ1PL

(1)

approximating the 1PL with a lorentzian shape oflinewidth κ1PL and considering the small detuningsrange |ωc − ωQD| << κ1PL, κ. Note that this simpleequation is very similar to the one giving the pulled fre-quency in atomic gas laser [26]. It is plotted in figure

3.b (dotted lines) for κ1PL = 1.5meV and gives a goodapproximation of the cavity pulling effect for small de-tunings. In particular, the cavity like behavior followsthe bare cavity behavior when the Q is high. This corre-sponds to a case where phonon assisted mechanisms actas a built in white light source inside the resonator. Onthe contrary, strong cavity pulling is expected when theQ is low, as observed in Fig. 3a and in Fig.2.

The symbols in figure 3c show that the mode intensitydecreases when approaching the resonance with the QDline, as observed experimentally. The normalized cavity-filtered 1PL emission

∫Scav(ω)×Γ1PL(T, ω)dω/Γ is also

plotted (thin solid lines). A good agreement is foundwith the intensity deduced from the lorentzian fit. Last,figure 3d shows the calculated cavity linewidth as a func-tion of detuning (symbols). For small quality factors,the phonon sideband mainly leads to a narrowing of thecavity line, i.e. an apparent increase of Q. For larger Qboth apparent reduction or increase of Q are predicted,depending on the slope of the phonon sideband spectrumat a given detuning.

Our theoretical framework allows to account for mostof the experimental observations as displayed in figure2.g-i. The QD-cavity emission properties are calculatedfor several QD lines coupled to the cavity mode. To sim-plify, the QD-cavity detuning is assumed linear with de-tuning. The measured spectrum is the average of spectracorresponding to the QD being either in the X, CX or XXstate. Here, equal occupation probability of the states isassumed. Each QD line experiences the optimal couplingto the cavity mode and to the phonons. As observed infigure 2d-f, the calculated cavity mode is pulled towardthe closest QD transition. In between two transitions, themode is fed by the phonon sidebands of both QD lines,resulting in significant slope changes in the line energyand in cavity line broadening. Finally, close to each res-onance, the increase in the QD emission corresponds toa decrease in the cavity line intensity, as observed exper-imentally. Indeed, the QD emits a single photon eitherin the 1PL or in the ZPL, with a fraction depending onthe Purcell effect of each line. When the ZPL is on res-onance, the ZPL Purcell enhancement is larger than forthe 1PL: the single photon is mainly emitted in the ZPL,at the expense of the 1PL, feeding the cavity line.

While most experimental observations are well ac-counted theoretically, we note that our experiments showadditional features very close to each QD line resonancewhere the cavity line presents an avoided crossing withthe mode. This mode pushing is especially clear for theCX resonance (see figure 2d). These features are not re-produced theoretically using the bulk phonon dispersion.Since the cavity probes the phonon sideband emission,the avoiding crossing at resonance indicates the presenceof discrete phonon modes. The existence of such con-fined phonon modes has recently been proposed in III-Vmicropillars cavities [33].

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In conclusion, we have evidenced cavity pulling effectsfor a single artificial atom coupled to a microcavity inthe weak coupling regime. These observations, obtainedthanks to a full control of the emitter-cavity coupling,show a strong distortion of the cavity spectrum inducedby the phonon sideband. We note that emission spec-troscopy is commonly used to measure the properties ofa cavity mode coupled to a solid state single emitter,whether the emitter is a self assembled QD, a NV centerin diamond or a colloidal QD. However, our work showsthat this techniques can lead to strong uncertainties onboth the deduced cavity linewidth and spectral position:the coupling to the solid state environment induces newphenomena appearing in the bad emitter limit for cavityquantum electrodynamics.

Acknowledgments

This work was partially supported by the FrenchANR P3N DELIGHT, ANR P3N CAFE, the Fon-dation Nanosciences de Grenoble, the ERC start-ing grant 277885 QD-CQED, the CHISTERA projectSSQN, the National Science Center in Poland (DEC-2011/01/N/ST3/04536 ), and a “Lider” grant fromThe National Center for Research and Development inPoland. The authors thank Dario Gerace, Robson Fer-reira, Claude Fabre, Jacqueline Bloch, Thomas Coudreauand Piotr Kossacki for discussions.

[email protected][email protected]

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