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ECE 3120 Microelectronics II Dr. Suketu Naik
Chapter 9
Frequency Response
PART C:
High Frequency
Response
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ECE 3120 Microelectronics II Dr. Suketu Naik
Discrete Common Source (CS) Amplifier
Goal: find high cut-off frequency, fH
fH is dependent on
internal capacitances
Vo
Load Resistance
will affect fH
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ECE 3120 Microelectronics II Dr. Suketu Naik
9.5.1 High Frequency Model of CS Amplifier
Goal: find high cut-off frequency, fH
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ECE 3120 Microelectronics II Dr. Suketu Naik
Miller Effect or Miller Multiplier K
Impedance Z can be replaced with two impedances:
Z1 connected between node 1 and ground = Z/(1-K)
Z2 connected between node 2 and ground = Z/(1-1/K)
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ECE 3120 Microelectronics II Dr. Suketu Naik
High-frequency model
C1 = Cgd(1-K), C2 = Cgd(1-1/K)
K =small signal gain= V0/Vgs=1+gmRLโ; RLโ=ro||RD||RL
Vo
Vo
Miller
Effect
Miller Effect or Miller Multiplier K
๐น๐๐๐โฒ=Rsig||RG
๐น๐ณโฒ = ๐๐| ๐น๐ซ |๐น๐ณ
input
resistance output
resistance
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ECE 3120 Microelectronics II Dr. Suketu Naik
Estimating fH
๐น๐๐๐โฒ = ๐น๐๐๐||๐น๐ฎ
๐ช๐๐ = ๐ช๐๐+ ๐ช๐๐ช๐ = ๐ช๐๐ ๐ + ๐๐๐น๐ณ
โฒ
๐น๐ณโฒ = ๐๐| ๐น๐ซ |๐น๐ณ
๐จ๐ด = โ๐น๐ฎ
๐น๐ฎ + ๐น๐๐๐๐๐๐น๐ณ
โฒ
AM
fH: First Estimate (Millerโs Approximation)
Miller Effect
๐๐ฏ =๐
๐๐ ๐ช๐๐๐น๐๐๐โฒ
Mid-band Gain
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ECE 3120 Microelectronics II Dr. Suketu Naik
Ex9.8
Compare AM and fH with the ones found in example 9.3
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ECE 3120 Microelectronics II Dr. Suketu Naik
9.5.2 Analysis Using Millerโs Theorem
High-frequency model with Load Capacitance CL
What is Load
Capacitance?
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ECE 3120 Microelectronics II Dr. Suketu Naik
Estimating fH
AM
fH: Second Estimate (Millerโs Theorem)
๐๐ฏ =๐
๐๐๐๐๐
๐+๐
๐๐๐๐๐๐
๐/๐
๐๐๐๐ =๐
๐๐ ๐ช๐๐๐น๐๐๐โฒ๐๐๐๐๐ =
๐
๐๐ ๐ช๐ณโฒ๐น๐ณโฒ
๐น๐๐๐โฒ = ๐น๐๐๐||๐น๐ฎ
๐ช๐๐ = ๐ช๐๐+ ๐ช๐๐ ๐ + ๐๐๐น๐ณโฒ
๐น๐ณโฒ = ๐๐| ๐น๐ซ |๐น๐ณ
๐ช๐ณโฒ = ๐ช๐ณ+ ๐ช๐๐ ๐ + ๐/(๐๐๐น๐ณโฒ )
C1 C2
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ECE 3120 Microelectronics II Dr. Suketu Naik
Example 9.5
Transfer function
First approximation
Second
approximation
Exact Value
-3 dB frequency
= 9537 rad/s
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ECE 3120 Microelectronics II Dr. Suketu Naik
Estimating fH
AM
fH: Third Estimate (Open Circuit Time Constants)
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ECE 3120 Microelectronics II Dr. Suketu Naik
P9.60, P9.61: CS Amp
Omit the % contribution. Just calculate fH
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ECE 3120 Microelectronics II Dr. Suketu Naik
Discrete Common Emitter (CE) Amplifier
Vo
Goal: find high cut-off frequency, fH
fH is dependent on
internal capacitances
Load Resistance
will affect fH
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ECE 3120 Microelectronics II Dr. Suketu Naik
High Frequency Model of CE Amplifier
Goal: find high cut-off frequency, fH
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ECE 3120 Microelectronics II Dr. Suketu Naik
High-frequency model
Vo
Miller Effect or Miller Multiplier K
๐น๐๐๐โฒ=Rsig||RG
๐น๐ณโฒ = ๐๐| ๐น๐ช |๐น๐ณ
input
resistance output
resistance
C1 C2
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ECE 3120 Microelectronics II Dr. Suketu Naik
Estimating fH
๐จ๐ด
= โ๐น๐ฉ
๐น๐ฉ+ ๐น๐๐๐
๐๐ ๐น๐ฉ||๐น๐๐๐ + ๐๐ + ๐๐
๐๐๐น๐ณโฒ
AM
fH: First Estimate (Millerโs Approximation)
Miller Effect
๐๐ฏ =๐
๐๐ ๐ช๐๐๐น๐๐๐โฒ
Mid-band Gain
๐น๐๐๐โฒ =
๐๐ ||[๐๐+ (๐น๐ฉ| ๐น๐๐๐ ]
๐ช๐๐ = ๐ช๐ + ๐ช๐
๐ช๐ = ๐ช๐ ๐ + ๐๐๐น๐ณโฒ
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ECE 3120 Microelectronics II Dr. Suketu Naik
Ex9.10
Note the trade-off between gain and bandwidth
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ECE 3120 Microelectronics II Dr. Suketu Naik
9.5.2 Analysis Using Millerโs Theorem
High-frequency model with Load Capacitance CL
What is Load
Capacitance?
Vo
C1
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ECE 3120 Microelectronics II Dr. Suketu Naik
Estimating fH
AM
fH: Second Estimate (Millerโs Theorem)
๐๐ฏ =๐
๐๐๐๐๐
๐+๐
๐๐๐๐๐๐
๐/๐
๐๐๐๐ =๐
๐๐ ๐ช๐๐๐น๐๐๐โฒ ๐๐๐๐๐ =๐
๐๐ ๐ช๐ณโฒ๐น๐ณโฒ
๐น๐ณโฒ = ๐๐| ๐น๐ช |๐น๐ณ
๐ช๐ณโฒ = ๐ช๐ณ + ๐ช๐ ๐ + ๐/(๐๐๐น๐ณโฒ )
C1
C2
๐น๐๐๐โฒ =
๐๐ ||[๐๐+ (๐น๐ฉ| ๐น๐๐๐ ]
๐ช๐๐ = ๐ช๐ + ๐ช๐ ๐ + ๐๐๐น๐ณโฒ
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ECE 3120 Microelectronics II Dr. Suketu Naik
Estimating fH
AM
fH: Third Estimate (Open Circuit Time Constants)
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ECE 3120 Microelectronics II Dr. Suketu Naik
P9.64, 9.65: CE Amp
Omit the % contribution. Just calculate fH
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ECE 3120 Microelectronics II Dr. Suketu Naik
Summary
Low Frequency Response:
The coupling and bypass capacitors cause the amplifier gain
to fall off at low frequencies
The low cut-off frequency can be estimated by considering
each of these capacitors separately
High Frequency Model:
Both MOSFET and the BJT have internal capacitive effects
that can be modeled by augmenting the device hybrid-ฯ
model with capacitances.
Transition Frequency indicates the speed of the transistor
MOSFET: fT = gm/2ฯ(Cgs+Cgd)
BJT: fT = gm/2ฯ(Cฯ+Cฮผ)
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ECE 3120 Microelectronics II Dr. Suketu Naik
A figure-of-merit for the amplifier is the gain-bandwidth product
(GB = AMfH): tradeoff between gain and bandwidth while
keeping GB
High Frequency Response:
The internal capacitances of the MOSFET and the BJT cause the
amplifier gain to fall off at high frequencies.
An estimate of the amplifier bandwidth is provided by the
frequency fH at which the gain drops 3dB below its value at mid-
band (AM).
The high-frequency response of the CS and CE amplifiers is
severely limited by the Miller effect
Three methods: 1) Millerโs Approximation, 2) Millerโs Theorem,
3) Open-circuit Time Constants
Summary