fqpf2n70 700v n chanel mosfet

7/28/2019 Fqpf2n70 700v n Chanel Mosfet

1/8

2003 Fairchild Semiconductor Corporation Rev. A, March 2003

FQPF2N70QFET

TM

FQPF2N70700V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchilds proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply.

Features

2.0A, 700V, RDS(on) = 6.3 @VGS = 10 V

Low gate charge ( typical 9.0 nC)

Low Crss ( typical 5.0 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

Absolute Maximum Ratings TC = 25C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQPF2N70 Units

VDSS Drain-Source Voltage 700 VID Drain Current - Continuous (TC = 25C) 2.0 A

- Continuous (TC = 100C) 1.3 A

IDM Drain Current - Pulsed (Note 1) 8.0 A

VGSS Gate-Source Voltage 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 140 mJ

IAR Avalanche Current (Note 1) 2.0 A

EAR Repetitive Avalanche Energy (Note 1) 2.8 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation (TC = 25C) 28 W

- Derate above 25C 0.22 W/C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 C

TL

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 C

Symbol Parameter Typ Max Units

RJC Thermal Resistance, Junction-to-Case -- 4.46 C/W

RJA Thermal Resistance, Junction-to-Ambient -- 62.5 C/W

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S

D

G

TO-220FFQPF Series

G SD


2/8

Rev. A, March 2003

FQPF2N70

2003 Fairchild Semiconductor Corporation

Electrical Characteristics TC = 25C unless otherwise noted

Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 45mH, IAS = 2.0A, VDD = 50V, RG = 25 , Starting TJ = 25C3. ISD 2.0A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C

4. Pulse Test : Pulse width 300s, Duty cycle 2%5. Essentially independent of operating temperature

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A 700 -- -- V

BVDSS

/ TJBreakdown Voltage TemperatureCoefficient ID = 250 A, Referenced to 25C -- 0.4 -- V/C

IDSSZero Gate Voltage Drain Current

VDS = 700 V, VGS = 0 V -- -- 10 A

VDS = 560 V, TC = 125C -- -- 100 A

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On CharacteristicsVGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 3.0 -- 5.0 V

RDS(on) Static Drain-Source

On-ResistanceVGS = 10 V, ID = 1.0 A -- 5.0 6.3

gFS Forward Transconductance VDS = 50 V, ID = 1.0 A (Note 4) -- 2.45 -- S

Dynamic CharacteristicsCiss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 270 350 pF

Coss Output Capacitance -- 38 50 pF

Crss Reverse Transfer Capacitance -- 5 7 pF

Switching Characteristicstd(on) Turn-On Delay Time VDD = 350 V, ID = 2.0 A,

RG = 25

(Note 4, 5)

-- -- 30 ns

tr Turn-On Rise Time -- -- 80 ns

td(off) Turn-Off Delay Time -- -- 50 ns

tf Turn-Off Fall Time -- -- 70 ns

Qg Total Gate Charge VDS = 560 V, ID = 2.0 A,

VGS = 10 V

(Note 4, 5)

-- 8.1 11 nC

Qgs Gate-Source Charge -- 1.7 -- nC

Qgd Gate-Drain Charge -- 4.4 -- nC

Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- 2.0 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 8.0 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.0 A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0 V, IS = 2.0 A,

dIF / dt = 100 A/s (Note 4)

-- 260 -- ns

Qrr Reverse Recovery Charge -- 1.09 -- C


3/8

Rev. A, March 2003

FQPF2N70


0 1 2 3 4 50

3

6

9

12

15

VGS

= 20V

VGS

= 10V

Note : TJ= 25

RDS(ON)

[

],

Drain-SourceOn-Resistance

ID, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.410

-1

100

25150

Note :1. V

GS=0V

2. 250 s Pulse Test

IDR,

ReverseDrainCurrent[A]

VSD

, Source-Drain Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

10-1

100

101

10-1

100

VGS

Top : 15.0 V10.0 V8.0 V

7.0 V6.5 V6.0 V

Bottom: 5.5 V

Note :1. 250 s Pulse Test2. T

C= 25

ID,DrainCurrent[A]

VDS

, Drain-Source Voltage [V]

2 4 6 8 1010

-1

100

Note1. V

DS= 50V

2. 250 s Pulse Test

-55

150

25

ID,DrainCurrent[A]

VGS

, Gate-Source Voltage [V]

10-1

100

101

0

100

200

300

400

500C

iss= C

gs+ C

gd(C

ds= shorted)

Coss

= Cds

+ Cgd

Crss

= Cgd

Note ;1. V

GS

= 0 V2. f = 1 MHzCrss

Coss

Ciss

Capacitances[pF]

VDS

, Drain-Source Voltage [V]

0 2 4 6 8 100

2

4

6

8

10

12

VDS

= 350V

VDS

= 140V

VDS

= 560V

Note : ID= 2 A

VGS,G

ate-SourceVoltage[V]

QG, Total Gate Charge [nC]


4/8

Rev. A, March 2003

FQPF2N70


100

101

102

103

10-2

10-1

100

101

1 ms

DC

100 ms10 ms

100s

Operation in This Areais Limited by R

DS(on)

Notes :

1. TC

= 25oC

2. TJ= 150

oC

3. Single Pulse

ID,DrainCurrent[A]

VDS, Drain-Source Voltage [V]

25 50 75 100 125 1500.0

0.5

1.0

1.5

2.0

ID,DrainCurrent[A]

TC, Case Temperature []

10-5

10-4

10-3

10-2

10-1

1 00

1 01

1 0-2

1 0-1

1 00

Notes :1. Z

JC( t ) = 4.46 / W M a x .

2 . Du ty Fac to r , D= t1/t

2

3. TJM

- TC

= PDM

* Z JC

(t)

s ing le pu l se

D = 0 . 5

0 . 0 2

0 .2

0 . 0 5

0 .1

0 . 0 1

Z

J

C(t),Therm

alResponse

t1, S q u a r e W a v e P u l s e D u r a ti o n [ s e c ]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Transient Thermal Response Curve

t1

PDM

t2

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

Note :1. V

GS=0V

2. ID=250A

BVDSS,(Normalized)

Drain-SourceBreakdownVoltage

TJ, Junction Temperature [

oC]

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

Note:1. V

GS= 10 V

2. ID= 3.1 A

RDS(ON),(Normalized)

Drain-SourceOn-Resistance

TJ, Junction Temperature [

oC]


5/8

Rev. A, March 2003

FQPF2N70


Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

Charge

VGS

10V

Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K

200nF12V

Same Type

as DUT

Charge

VGS

10V

Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K

200nF12V

Same Type

as DUT

VGS

VDS

10%

90%

td(on)

tr

t on t off

td(off) t

f

VDD

10V

VDSRL

DUT

RG

VGS

VGS

VDS

10%

90%

td(on)

tr

t on t off

td(off) t

f

VDD

10V

VDSRL

DUT

RG

VGS

EAS = L IAS2----

2

1--------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

tp

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

L

I D

tp

EAS = L IAS2----

2

1EAS = L IAS

2----2

1----2

1--------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

tp

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

LL

I DI D

tp


6/8

Rev. A, March 2003

FQPF2N70


Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

Driver

RG

Same Typeas DUT

VGS dv/dt controlled by RG ISD controlled by pulse period

VDD

L

I SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period--------------------------

DUT

VDS

+

_

Driver

RG

Same Typeas DUT

VGS dv/dt controlled by RG ISD controlled by pulse period

VDD

LL

I SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period--------------------------D =Gate Pulse Width

Gate Pulse Period--------------------------


7/8

Rev. A, March 20032003 Fairchild Semiconductor Corporation

FQPF2N70

Dimensions in Millimeters

Package Dimensions

(7.00) (0.70)

MAX1.47

(30

)

#1

3.

30

0.

10

15.

80

0.

20

15.

87

0.

20

6.

68

0.

20

9.

75

0.

30

4.

70

0.

20

10.16 0.20

(1.00x45)

2.54 0.20

0.80 0.10

9.40 0.20

2.76 0.200.35 0.10

3.18 0.10

2.54TYP

[2.54 0.20]

2.54TYP

[2.54 0.20]

0.50+0.100.05

TO-220F


8/8


DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I2

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fqpf2n70 700v n chanel mosfet

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