fqpf17p06-datasheetz

7/29/2019 FQPF17P06-datasheetz

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May 2001

QFETTM

FQPF17P06

2001 Fairchild Semiconductor Corporation Rev. A2. May 2001

FQPF17P0660V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect

transistors are produced using Fairchilds proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand a high energy pulse in the

avalanche and commutation modes. These devices are

well suited for low voltage applications such as automotive,

DC/DC converters, and high efficiency switching for power

management in portable and battery operated products.

Features

-12A, -60V, RDS(on) = 0.12 @VGS = -10 V

Low gate charge ( typical 21 nC)

Low Crss ( typical 80 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

175C maximum junction temperature rating

Absolute Maximum Ratings TC = 25C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQPF17P06 Units

VDSS Drain-Source Voltage -60 VID Drain Current - Continuous (TC = 25C) -12 A

- Continuous (TC = 100C) -8.5 A

IDM Drain Current - Pulsed (Note 1) -48 A

VGSS Gate-Source Voltage 25 V

EAS Single Pulsed Avalanche Energy (Note 2) 300 mJ

IAR Avalanche Current (Note 1) -12 A

EAR Repetitive Avalanche Energy (Note 1) 3.9 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns

PD Power Dissipation (TC = 25C) 39 W

- Derate above 25C 0.25 W/C

TJ, TSTG Operating and Storage Temperature Range -55 to +175 C

TL

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 C

Symbol Parameter Typ Max Units

RJC Thermal Resistance, Junction-to-Case -- 3.85 C/W

RJA Thermal Resistance, Junction-to-Ambient -- 62.5 C/W

TO-220FFQPF Series

G SD

!!!!

!!!!

!!!!

!!!!

!!!!

!!!!

S

D

G


2/8

FQPF17P06

Rev. A2. May 20012001 Fairchild Semiconductor Corporation

Elerical Characteristics TC = 25C unless otherwise noted

Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 2.4mH, IAS = -12A, VDD = -25V, RG = 25 , Starting TJ = 25C3. ISD -17A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C

4. Pulse Test : Pulse width 300s, Duty cycle 2%5. Essentially independent of operating temperature

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A -60 -- -- V

BVDSS

/ TJBreakdown Voltage TemperatureCoefficient ID = -250 A, Referenced to 25C -- -0.06 -- V/C

IDSSZero Gate Voltage Drain Current

VDS = -60 V, VGS = 0 V -- -- -1 A

VDS = -48 V, TC = 150C -- -- -10 A

IGSSF Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA

On CharacteristicsVGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A -2.0 -- -4.0 V

RDS(on) Static Drain-Source

On-ResistanceVGS = -10 V, ID = -6.0 A -- 0.094 0.12

gFS Forward Transconductance VDS = -30 V, ID = -6.0 A -- 8.7 -- S

Dynamic CharacteristicsCiss Input Capacitance VDS = -25 V, VGS = 0 V,

f = 1.0 MHz

-- 690 900 pF

Coss Output Capacitance -- 325 420 pF

Crss Reverse Transfer Capacitance -- 80 105 pF

Switching Characteristicstd(on) Turn-On Delay Time VDD = -30 V, ID = -8.5 A,

RG = 25

-- 13 35 ns

tr Turn-On Rise Time -- 100 210 ns

td(off) Turn-Off Delay Time -- 22 55 ns

tf Turn-Off Fall Time -- 60 130 ns

Qg Total Gate Charge VDS = -48 V, ID = -17 A,

VGS = -10 V

-- 21 27 nC

Qgs Gate-Source Charge -- 4.2 -- nC

Qgd Gate-Drain Charge -- 10 -- nC

Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- -12 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -48 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -12 A -- -- -4.0 V

trr Reverse Recovery Time VGS = 0 V, IS = -17 A,

dIF / dt = 100 A/s

-- 92 -- ns

Qrr Reverse Recovery Charge -- 0.32 -- C

(Note 4)

(Note 4, 5)

(Note 4, 5)

(Note 4)


3/8

FQPF17P06


0 4 8 12 16 20 240

2

4

6

8

10

12

VDS

= -30V

VDS

= -48V

Note : ID

= -17 A

-VGS,Gate-SourceVoltage[V]

QG, Total Gate Charge [nC]

10-1

100

101

0

200

400

600

800

1000

1200

1400

1600

1800

2000Ciss = Cgs + Cgd (Cds = shorted)

Coss= Cds + Cgd

Crss = Cgd

Notes :

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

C

apacitance[pF]

VDS, Drain-Source Voltage [V]

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.410

-1

100

101

175Notes :

1. VGS

= 0V

2. 250 s Pulse Test

25

-IDR,ReverseDrainCurrent[A]

-VSD

, Source-Drain Voltage [V]

0 20 40 60 800.00

0.04

0.08

0.12

0.16

0.20

0.24

0.28

0.32

0.36

Note : TJ= 25

VGS

= - 20V

VGS

= - 10V

RDS(on)

[],

Drain-SourceOn-Resistance

-ID

, Drain Current [A]

2 4 6 8 1010

-1

100

101

175

25

-55 Notes :1. V

DS= -30V

2. 250 s Pulse Test

-ID

,DrainCurrent[A]

-VGS

, Gate-Source Voltage [V]

10-1

100

101

100

101

VGS

Top : - 15.0 V

- 10.0 V

- 8.0 V- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

Bottom: - 4.5 V

Notes :

1. 250 s Pulse Test

2. TC

= 25

-ID,DrainCurrent[A]

-VDS

, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics


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FQPF17P06


1 0-5

1 0-4

1 0-3

1 0-2

1 0-1

1 00

1 01

1 0-2

1 0-1

1 00

N o t e s :

1. Z JC

( t ) = 3 .85 / W M a x .

2 . D u t y F a c t o r , D = t1/t

2

3. TJM

- TC

= PDM

* Z JC

(t )

s i n g l e p u l s e

D = 0 . 5

0 . 0 2

0 .2

0 . 0 5

0 .1

0 . 0 1

Z

JC(

t),Therm

alResponse

t1, S q u a r e W a v e P u l s e D u r a t io n [ s e c ]

25 50 75 100 125 150 1750

2

4

6

8

10

12

-ID,DrainCurrent[A]

TC, Case Temperature [

]

100

101

102

10-1

100

101

102

100 ms

DC

10 ms

1 ms

Operation in This Area

is Limited by RDS(on)

Notes :

1. TC

= 25oC

2. TJ= 175

oC

3. Single Pulse

-ID,DrainCurrent[A]

-VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

Notes :

1. VGS

= -10 V

2. ID

= -8.5 A

RDS(ON),(Normalized)

Drain-SourceOn-Resistance

TJ, Junction Temperature [

oC]

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

Notes :

1. VGS

= 0 V

2. ID

= -250A

-BVDSS,(Normalized)

Drain-SourceBreakdownVoltage

TJ, Junction Temperature [

oC]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Transient Thermal Response Curve

t1

PDM

t2


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FQPF17P06


Charge

VGS

-10V

Qg

Qgs Qgd

-3mA

VGS

DUT

VDS

300nF

50K

200nF12V

Same Type

as DUT

Charge

VGS

-10V

Qg

Qgs Qgd

-3mA

VGS

DUT

VDS

300nF

50K

200nF12V

Same Type

as DUT

VDS

VGS10%

90%

td(on)

tr

ton

toff

td(off) t

fVDD

-10V

VDSRL

DUT

RG

VGS

VDS

VGS10%

90%

td(on)

tr

ton

toff

td(off) t

fVDD

-10V

VDSRL

DUT

RG

VGS

EAS = L IAS2----

2

1--------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

tp

VDD

IAS

VDS (t)

ID (t)

Time

-10V DUT

RG

L

I D

tp

EAS = L IAS2----

2

1EAS = L IAS

2----2

1----2

1--------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

tp

VDD

IAS

VDS (t)

ID (t)

Time

-10V DUT

RG

LL

I DI D

tp

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms


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FQPF17P06


Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

Driver

RG

Compliment of DUT(N-Channel)

VGS dv/dt controlled by RG ISD controlled by pulse period

VDD

L

I SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDDBody Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period--------------------------

DUT

VDS

+

_

Driver

RG

Compliment of DUT(N-Channel)

VGS dv/dt controlled by RG ISD controlled by pulse period

VDD

LL

I SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDDBody Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period--------------------------D =Gate Pulse Width

Gate Pulse Period--------------------------


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FQPF17P06


Package Dimensions

(7.00) (0.70)

MAX1.47

(30)

#1

3.

30

0.

10

15.

80

0.

20

15.8

7

0.

20

6.

68

0.

20

9.7

5

0.

30

4.

70

0.

20

10.16 0.20

(1.00x45)

2.54 0.20

0.80 0.10

9.40 0.20

2.76 0.200.35 0.10

3.18 0.10

2.54TYP

[2.54 0.20]

2.54TYP

[2.54 0.20]

0.50+0.100.05

TO-220F


8/8

2001 Fairchild Semiconductor Corporation Rev. H2

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intended to be an exhaustive list of all such trademarks.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

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