fpix_flip_chip_test module calibration tests november 14 th 2012
TRANSCRIPT
FPIX_flip_chip_test module calibration tests
November 14th 2012
2
Sensor
• 2 SINTEF 2004 1x1 bump bonded– Planar 300 μm thick pixel sensor
• Flip-chipped then reflow• Assembled on a new testboard on November
7th, and 12th 2012• No post-dicing IV was performed for the first
sensor
3
Leakage currentFirst sensor’s before BBM IV was not performed!
4
Full calibration summary – First sensor
ROC pixel alive test
Bump-bonding test
Second sensor has similar calibration
Bias = -150 V
5
Testing bum-bond with forward bias test
• Run pixel alive test • ROC on with sensor at reverse bias• ROC on with sensor at forward bias
• Idea:– Forward bias will saturate the sensor, causing pre-
amplifiers in chip pixels saturate: chip pixels disappear from the pixel alive test map if bump-bonds are in contact
6
Testing bum-bond with forward bias test
SINTEF 2004 1x1 First sensor
NO
BIA
SRE
VERS
E BI
ASFO
RWAR
D B
IAS
SINTEF 2004 1x1 Second sensor
REVERSE BIAS = -150 VFORWARD BIAS = +10 V
7
Radioactive source test (Sr-90)
Bias = -150VMean = 22 ke-MP = 18 ke-285 μm thick
Double pixel hits In one trigger
SINTEF 2004 1x1 Second sensorSINTEF 2004 1x1 First sensor
Bias = -150VMean = 23 ke-MP = 18 ke-285 μm thick
8
Charge collection Charge distribution mean values versus bias voltages Scan not performed for the second sensor
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Summary• Two SINTEF 2004 1x1 sensors bump bonded• Both sensor ROCs work fine
– Good calibrations: Gain, SCurve, Vsf etc– Full calibration
• Forward bias current and standard methods showed that all bump-bonds are in good contact – IV suggest a good ROC to sensor contact established since
ground goes through ROC for sensor HV• Standard bump-bond algorithm implemented in PSI
DAQ software consistent with forward bias test• Source tests showed a good charge collection
10
SINTEF 2011 1x1 SENSORS
11
12
Past design 1x2 in previous production
L1, S1, S2, S3, S5
New in this batch.Maximized pixel area
S8
L2, L3, S6
New in this batch.Removed asimmetry
S4, S7Note: S1, S2 and S3 have slim edges (S1 the slimmest and increasing in S2 and S3)
SINTEF_2011 1x1 sensors
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November 13, 2012
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Sensor: SINTEF_2011_WA15_S5
• Planar 300 μm thick• Bump bonded to a ROC on 11-13-2012
- Flip-chipped then reflown• Assembled on a new testboard on November
13th 2012
15
A15 S5 - Leakage currentBreakdown [V]
On wafer 195Post-dicing 225Module 960
16
A15 S5 - Full calibration summary (-150V)
ROC pixel alive test
Bump-bonding test (this test found 3185 dead bumps)
Bias = -150 V
17
A15 S5 - Full calibration summary (-400V)
ROC pixel alive test
Bump-bonding test (this test found 1 dead bumps)
Bias = -400 V
18
A15 S5 - Testing bum-bond with forward bias test
SINTEF_2011_WA15_S5 pixel alive test at REVERSE BIAS
SINTEF_2011_WA15_S5 pixel alive test at NO BIAS
REVERSE BIAS = -150 VFORWARD BIAS = +10 V
pixel alive test at FORWARD BIASpixel alive test at REVERSE BIAS with LIGHT
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A15 S5 - Radioactive source test (Sr-90)
Source above sensor center Source above sensor edge
Pixel alive map at forward bias Source placed on different locationsabove the sensor No correlation found betweenforward bias pixel alive map andsource hitmap Can we trust forward bias test?
REVERSE BIAS = -150 VFORWARD BIAS = +10 V
20
A15 S5 - Radioactive source test (Sr-90)
Bias = -150VMean = 25 ke-MP = 21.5 ke-Thickness = 300 μm
Double pixel hits In one trigger
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Sensor: SINTEF_2011_WA15_S6
• Planar 300 μm thick• Bump bonded to a ROC on 11-13-2012
- Flip-chipped then reflow• Assembled on a new testboard on November
13th 2012
22
A15 S6 - Leakage currentBreakdown [V]
On wafer 360Post-dicing 370Module 835
23
A15 S6 - Full calibration summary (-150V)
ROC pixel alive test
Bump-bonding test (this test found 2488 dead bumps)
Bias = -150 V
24
A15 S6 - Full calibration summary (-300V)
ROC pixel alive test
Bump-bonding test (this test found 6 dead bumps)-400 V has also identical results
Bias = -300 V
25
A15 S6 - Testing bum-bond with forward bias test
SINTEF_2011_WA15_S6 pixel alive test at REVERSE BIAS
SINTEF_2011_WA15_S6 pixel alive test at FORWARD BIAS
SINTEF_2011_WA15_S6 pixel alive test at NO BIAS
~1200 pixels
Forward bias: 1200 dead bumpsPSI software test: 2488 dead bumps
REVERSE BIAS = -150 VFORWARD BIAS = +10 V
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A15 S6 - Radioactive source test (Sr-90)
Bias = -150VMean = 20.7 ke-MP = 17.5 ke-Thickness = 300 μm
Source hit map
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Summary• SINTEF 2011 S5 and S6 sensors bump bonded on 11-13-2012• Both sensor ROCs work fine
– Good calibrations: Gain, SCurve, Vsf etc– Full calibration with minimum effort
• Sensor breakdown voltages increased after assembly– No breakdown observed up to 800 V
• Bump-bond tests– Forward bias method: 1000 (S5), 1200 (S6) dead bumps – PSI method: 3185 (S5), 2488 (S6) dead bumps
• Source tests showed a good charge collection– Double hits in one trigger needs to removed from analysis– S6 will be retested with source
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November 14, 2012
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Sensor: SINTEF_2011_WA15_S7
• Planar 300 μm thick• Bump bonded to a ROC on 11-14-2012
- Flip-chipped then reflow• Assembled on a new testboard on November
14th 2012• IVs on wafer, before and after BBM, and on
testboard measured
30
A15 S7 - Leakage currentBreakdown [V]
On wafer 310Before BBM 320BBM 945Testboard >1100
31
A15 S7 - Full calibration summary
ROC pixel alive test
Bump-bonding test
Bias = -200 V
32
A15 S7 - Testing bum-bond with forward bias + light test
SINTEF_2011_WA15_S6 pixel alive test at REVERSE BIAS
pixel alive test at FORWARD BIAS
SINTEF_2011_WA15_S6 pixel alive test at NO BIAS
pixel alive test at REVERSE BIAS with LIGHT
REVERSE BIAS = -200 VFORWARD BIAS = +10 V
33
A15 S7 - Radioactive source test (Sr-90)
Bias = -200VMean = 25 ke-MP = 21.7 ke-Thickness = 300 μm
Source hit map
34
Sensor: SINTEF_2011_WA15_S8
• Planar 300 μm thick• Bump bonded to a ROC on 11-14-2012
- Flip-chipped then reflow• Assembled on a new testboard on November
14th 2012• IVs on wafer, before and after BBM, and on
testboard measured
35
A15 S8 - Leakage currentBreakdown [V]
On wafer 310Before BBM 220BBM >1100Testboard 995
36
A15 S8 - Full calibration summary
ROC pixel alive test
Bump-bonding test
Bias = -200 V
37
A15 S8 - Testing bum-bond with forward bias + light test
SINTEF_2011_WA15_S6 pixel alive test at FORWARD BIAS
SINTEF_2011_WA15_S6 pixel alive test at REVERSE BIAS
REVERSE BIAS = -200 VFORWARD BIAS = +10 V
SINTEF_2011_WA15_S6 pixel alive test with LIGHT at REVERSE BIAS
38
A15 S8 - Radioactive source test (Sr-90)
Bias = -200VMean = 26 ke-MP = 22.2 ke-Thickness = 300 μm
Source hit map
39
Sensor: SINTEF_2011_WA17_S5
• Planar 300 μm thick• Bump bonded to a ROC on 11-15-2012
- Flip-chipped then reflow• Assembled on a new testboard on November
15th 2012• IVs on wafer, before and after BBM, and on
testboard measured
40
A17 S5 - Leakage currentBreakdown [V]
On wafer 205Before BBM 185BBM >1000Testboard >1000
41
A17 S5 - Full calibration summary
ROC pixel alive test
Bump-bonding test (found 67 dead bumps)
Bias = -200 V
42
A17 S5 - Testing bum-bond with forward bias + light test
SINTEF_2011_WA17_S5 pixel alive test at FORWARD BIAS
SINTEF_2011_WA17_S5 pixel alive test at REVERSE BIAS
REVERSE BIAS = -200 VFORWARD BIAS = +10 V
SINTEF_2011_WA17_S5 pixel alive test with LIGHT at REVERSE BIAS
43
A17 S5 - Radioactive source test (Sr-90)
Bias = -200VMean = 22.3 ke-MP = 19.7 ke-Thickness = 300 μm
Source hit map
44
Sensor: SINTEF_2011_WA17_S6
• Planar 300 μm thick• Bump bonded to a ROC on 11-15-2012
- Flip-chipped then reflow• Assembled on a new testboard on November
15th 2012• IVs on wafer, before and after BBM, and on
testboard measured
45
A17 S6 - Leakage currentBreakdown [V]
On wafer 210Before BBM 185BBM >1000Testboard >1000
46
A17 S6 - Full calibration summary
ROC pixel alive test
Bump-bonding test (found 6 dead bumps)
Bias = -200 V
47
A17 S6 - Testing bum-bond with forward bias + light test
SINTEF_2011_WA17_S6 pixel alive test at FORWARD BIAS
SINTEF_2011_WA17_S6 pixel alive test at REVERSE BIAS
REVERSE BIAS = -200 VFORWARD BIAS = +10 V
SINTEF_2011_WA17_S6 pixel alive test with LIGHT at REVERSE BIAS
48
A17 S6 - Radioactive source test (Sr-90)
Bias = -200VMean = 26 ke-MP = 21.2 ke-Thickness = 300 μm
Source hit map
49
Sensor: SINTEF_2011_WA17_S7
• Planar 300 μm thick• Bump bonded to a ROC on 11-15-2012
- Flip-chipped then reflow• Assembled on a new testboard on November
15th 2012• IVs on wafer, before, and on testboard
measured
50
A17 S7 - Leakage currentBreakdown [V]
On wafer 405Before BBM 310Testboard 830
51
A17 S7 - Full calibration summary
ROC pixel alive test
Bump-bonding test (found 15 dead bumps)
Bias = -200 V
52
A17 S7 - Testing bum-bond with forward bias + light test
SINTEF_2011_WA17_S7 pixel alive test at FORWARD BIAS
SINTEF_2011_WA17_S7 pixel alive test at REVERSE BIAS
REVERSE BIAS = -200 VFORWARD BIAS = +10 V
SINTEF_2011_WA17_S7 pixel alive test with LIGHT at REVERSE BIAS
53
A17 S7 - Radioactive source test (Sr-90)
Bias = -200VMean = 27 ke-MP = 21.4 ke-Thickness = 300 μm
Source hit map
54
Sensor: SINTEF_2011_WA17_S8
• Planar 300 μm thick• Bump bonded to a ROC on 11-15-2012
- Flip-chipped then reflow• Assembled on a new testboard on November
15th 2012• IVs on wafer, before, and on testboard
measured
55
A17 S8 - Leakage currentBreakdown [V]
On wafer 325Before BBM 330Testboard 810
56
A17 S8 - Full calibration summary
ROC pixel alive test
Bump-bonding test (found 2 dead bumps)
Bias = -200 V
57
A17 S8 - Testing bum-bond with forward bias + light test
SINTEF_2011_WA17_S8 pixel alive test at FORWARD BIAS
SINTEF_2011_WA17_S8 pixel alive test at REVERSE BIAS
REVERSE BIAS = -200 VFORWARD BIAS = +10 V
SINTEF_2011_WA17_S8 pixel alive test with LIGHT at REVERSE BIAS
58
A17 S8 - Radioactive source test (Sr-90)
Bias = -200VMean = 25.5 ke-MP = 21 ke-Thickness = 300 μm
Source hit map
59
Sensor: SINTEF_2011_WA16_S5
• Planar 300 μm thick• Bump bonded to a ROC on 11-16-2012
- Flip-chipped then reflow• Assembled on a new testboard on November
16th 2012• IVs on wafer, before, and on testboard
measured
60
A16 S5 - Leakage currentBreakdown [V]
On wafer 210Before BBM 185After BBM >1000Testboard 950
61
A16 S5 - Full calibration summary
ROC pixel alive test
Bump-bonding test (found 2 dead bumps)
Bias = -200 V
62
A16 S5 - Testing bum-bond with forward bias + light test
SINTEF_2011_WA16_S5 pixel alive test at FORWARD BIAS
SINTEF_2011_WA16_S5 pixel alive test at REVERSE BIAS
REVERSE BIAS = -200 VFORWARD BIAS = +10 V
SINTEF_2011_WA16_S5 pixel alive test with LIGHT at REVERSE BIAS
63
A16 S5 - Radioactive source test (Sr-90)
Bias = -200VMean = 26.7 ke-MP = 21.7 ke-Thickness = 300 μm
Source hit map
64
Sensor: SINTEF_2011_WA16_S6
• Planar 300 μm thick• Bump bonded to a ROC on 11-16-2012
- Flip-chipped then reflow• Assembled on a new testboard on November
16th 2012• IVs on wafer, before, and on testboard
measured
65
A16 S6 - Leakage currentBreakdown [V]
On wafer 345Before BBM 190After BBM 835Testboard 825
66
A16 S6 - Full calibration summary
ROC pixel alive test
Bump-bonding test (found 13 dead bumps)
Bias = -200 V
67
A16 S6 - Testing bum-bond with forward bias + light test
SINTEF_2011_WA16_S6 pixel alive test at FORWARD BIAS
SINTEF_2011_WA16_S6 pixel alive test at REVERSE BIAS
REVERSE BIAS = -200 VFORWARD BIAS = +10 V
SINTEF_2011_WA16_S6 pixel alive test with LIGHT at REVERSE BIAS
68
A16 S6 - Radioactive source test (Sr-90)
Bias = -200VMean = 27 ke-MP = 22.6 ke-Thickness = 300 μm
Source hit map
69
Sensor: SINTEF_2011_WA16_S7
• Planar 300 μm thick• Bump bonded to a ROC on 11-16-2012
- Flip-chipped then reflow• Assembled on a new testboard on November
16th 2012• IVs on wafer, before, and on testboard
measured
70
A16 S7 - Leakage currentBreakdown [V]
On wafer 345Before BBM 190Testboard 980
71
A16 S7 - Full calibration summary
ROC pixel alive test
Bump-bonding test (found 5 dead bumps)
Bias = -200 V
72
A16 S7 - Testing bum-bond with forward bias + light test
SINTEF_2011_WA16_S7 pixel alive test at FORWARD BIAS
SINTEF_2011_WA16_S7 pixel alive test at REVERSE BIAS
REVERSE BIAS = -200 VFORWARD BIAS = +10 V
SINTEF_2011_WA16_S7 pixel alive test with LIGHT at REVERSE BIAS
73
A16 S7 - Radioactive source test (Sr-90)
Bias = -200VMean = 29 ke-MP = 25 ke-Thickness = 300 μm
Source hit map
74
Sensor: SINTEF_2011_WA16_S8
• Planar 300 μm thick• Bump bonded to a ROC on 11-16-2012
- Flip-chipped then reflow• Assembled on a new testboard on November
16th 2012• IVs on wafer, before, and on testboard
measured
75
A16 S8 - Leakage currentBreakdown [V]
On wafer 345Before BBM 325After BBM 970Testboard >1000
76
A16 S8 - Full calibration summary
ROC pixel alive test
Bump-bonding test (found 13 dead bumps)
Bias = -200 V
77
A16 S8 - Testing bum-bond with forward bias + light test
SINTEF_2011_WA16_S8 pixel alive test at FORWARD BIAS
SINTEF_2011_WA16_S8 pixel alive test at REVERSE BIAS
REVERSE BIAS = -200 VFORWARD BIAS = +10 V
SINTEF_2011_WA16_S8 pixel alive test with LIGHT at REVERSE BIAS
78
A16 S8 - Radioactive source test (Sr-90)
Bias = -200VMean = 25.6 ke-MP = 21.3 ke-Thickness = 300 μm
Source hit map
79
Sensor: SINTEF_2011_WA18_S5
• Planar 300 μm thick• Bump bonded to a ROC on 11-17-2012
- Flip-chipped then reflow• Assembled on a new testboard on November
17th 2012• IVs on wafer, before, and on testboard
measured
80
A18 S5 - Leakage currentBreakdown [V]
On waferBefore BBMTestboard
81
A18 S5 - Full calibration summary
ROC pixel alive test
Bump-bonding test (found 493 dead bumps)Not repeatable and degrades at higher biases
Bias = -200 V
82
A18 S5 - Testing bum-bond with forward bias + light test
SINTEF_2011_WA18_S5 pixel alive test at FORWARD BIAS
SINTEF_2011_WA18_S5 pixel alive test at REVERSE BIAS
REVERSE BIAS = -200 VFORWARD BIAS = +10 V
SINTEF_2011_WA18_S5 pixel alive test with LIGHT at REVERSE BIAS
83
A18 S5 - Radioactive source test (Sr-90)
Bias = -200VMean = 27.6 ke-MP = 22.5 ke-Thickness = 300 μm
Source hit map
84
Sensor: SINTEF_2011_WA18_S6
• Planar 300 μm thick• Bump bonded to a ROC on 11-17-2012
- Flip-chipped then reflow• Assembled on a new testboard on November
17th 2012• IVs on wafer, before, and on testboard
measured
85
A18 S6 - Leakage currentBreakdown [V]
On waferBefore BBMTestboard
86
A18 S6 - Full calibration summary
ROC pixel alive test
Bump-bonding test (found 1 dead bumps)
Bias = -200 V
87
A18 S6 - Testing bum-bond with forward bias + light test
SINTEF_2011_WA18_S6 pixel alive test at FORWARD BIAS
SINTEF_2011_WA18_S6 pixel alive test at REVERSE BIAS
REVERSE BIAS = -200 VFORWARD BIAS = +10 V
SINTEF_2011_WA18_S6 pixel alive test with LIGHT at REVERSE BIAS
88
A18 S6 - Radioactive source test (Sr-90)
Bias = -200VMean = 30 ke-MP = 25 ke-Thickness = 300 μm
Source hit map
89
November 27, 2012
90
Noise study
• SCurve tests performed at– 22 °C– Vbias [-V] = 25, 50, 75, 100, 125, 150, 175, 200,
250, and 300– Almost no noise date at Vbias = -25 V
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SINTEF 2011 WA15
92
SINTEF 2011 WA16
93
SINTEF 2011 WA17