FOUP (Pod) contamination control solutions for 200 mm,

300 mm and 450 mm substrates

Jorgen Lundgren, Senior Applications Engineer ‒ Entegris GmbH

Agenda

• Entegris introduction

• FOUP (Pod) Contamination Control Solution

– Advanced Purge

– EBM Material – EBM Material

• Purge test results

• M200 SMIF pod

• Summary

Entegris at a Glance

• Market leader in contamination control, critical

materials handling and advanced process materials

for semiconductor and other high-tech industries

• Fiscal 2013 pro forma sales of $1.1 billion

• 3,500 employees worldwide

• 618 U.S. patents and 1073 patents in

other countries

• Headquartered in Billerica, MA with a global

infrastructure of manufacturing, service and research

1966 Founded asFluoroware, Inc.

2000 IPO

2005 Merges with Mykrolis, previously part of Millipore

2007 Acquires Surmet’s SemiconductorCoatings Business

2008 Acquires Poco Graphite

2009 Acquires PureLine

Entegris Milestones

infrastructure of manufacturing, service and research

facilities in the U.S., Malaysia, Singapore, Taiwan,

China, Korea, Japan, Israel, Germany and France

• Publicly traded on NASDAQ under ENTG

2012 Acquires EPT

2013 Acquires Jetalon Solutions

2014 Acquires ATMI, a leading provider of advanced materials

Wafer and reticle handling solutions have kept pace

with each advancement in IC manufacturing

700

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Tech

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log

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nm

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SRP reticle pod released

300 mm FOUP

300 mm wafer shipper

RSP200 reticle pod

released

RSP150 reticle pod

1985: 200 mm SMIF pod

1988: SMIF reticle podInnovation

0

100

200

300

400

500

600

1989 1991 1993 1995 1997 1999 2001 2003 2005 2007 2009 2011 2013 2015

Year

Tech

no

log

y N

od

e (

nm

)

Dual opening (manual and FIMS)

300 mm FOSB

RSP150 reticle pod

released

Clarilite® Reticle Solution released

Spectra™ FM4911 approved FOUP

Wafer Environment Control FOUPs, EUV Pod, 450 mm MAC/FOUP

Clarilite® and Spectra™ are trademarks of Entegris, Inc.

Why is Microenvironmental Control Critical?

• Faster chips, greater performance

• New processes and materials

• 45 nm and below processes

• New requirements:

– Achieve very low contaminant levels

(AMCs, O2, RH)

– Maintain low levels for extended period

of time (w/o maintenance purge)

Manufacturing / Development Research

45 nm 32/28 nm 22/20 nm 16/14 nm 10 nm

of time (w/o maintenance purge)

– Better purge uniformity across wafer slots

– Maintain low level when FOUP door is open

• Advantages:

– Higher yield

– Smaller wafer-to-wafer variation

– Higher tool throughput

– More flexible WIP management

(extended queue time)

Why H2O and O2 Control are Critical

Cu + O2 + H2O

F- as catalyst

Oxidized CuRemoved by following

wet cleaning (Cu-loss)

Copper Corrosion*

Defect / Crystal Growth

*Source: T. Kamoshima, et al., "Controlling ambient gas in slot-to-slot space inside FOUP to suppress Cu-loss after dual damascene patterning," IEEE Trans. Semicon. Manufact., vol. 21 (Renesas & Hitachi).© 2008 IEEE – all rights reserved.

Defect / Crystal Growth

AMC + H2O Chemical reaction

HF

HCl

� F2 and Cl2 are common gases used for etching

� Residual F2 and Cl2 will react with H2O and form HF and HCl

that will lead to attack of the edge profile

Excessive Etch

Cl2 HCl

H2O

F2

H2O

HF

Crystal Defects

• Using EBM FOUPs and purge can effectively help with defect reduction

PC FOUP without purging

Moisture reacts with

Defects

moisture

moisture

defect

AMC

Wafers are dirty

and can outgas

Snorkel purge can remove

AMC/moisture away from

wafers and FOUP

Even if there is still AMC inside

FOUP, barrier material can maintain

FOUP within a low moisture

environment for a few hours

No moisture, can ensure

wafers are clean

Entegris barrier material FOUP with snorkel purge

AMC will react with

moisture

Moisture reacts with

contaminant in FOUP and

deposit/condense on wafers

AMC

moisture

N2

AMC

Defect

Free

Is Queue Time Control Enough? Wafers are idling longer on load port during process!

So, LP purge is needed to protect your wafers

Queue time Cycle time

Process

tool #1Process

tool #2

AMC/moisture/oxygen has

caused damage to wafers

1. Wafers can be idle for 1–2 hours on single

processing tool and defects can be formed

during this time on load port

2. Therefore, N2/CDA protected environment is

strongly recommended

Load port

tool #1tool #2

Wafers might have been damaged while waiting

for other wafers to be processed, so no matter

how you control the queue time, it might not work

Advanced Purge TechnologyAdvanced Purge TechnologyFor an effective purge

Traditional purge cannot meet your advanced

process needs

• Some purge gas will either flow directly from inlet to outlet or leak out from door,

some dead zones are created

• Purge gas is difficult to go into the space between wafers, where RH/O2 control is

most needed

1 inlet/1 outlet (front purge)

Dead corner where N2is difficult to fill

• Do you have particle issues?– On top wafer– Back of FOUP

door

FOUP (1 inlet, 1 outlet = front purge)

FOUP (2 inlet, 2 outlet)

door

Traditional purge cannot meet your advanced

process needs

Improved Design: 2 inlets/2 outlets (rear purge)

FOUP (2 inlet, 2 outlet)

• Flow is smoother → less parOcle trap

• 2 inlets/2 outlets can meet most of the

application need

High N2

No snorkel =

2 inlets from the back

• N2 will not easily fill the spaces

between wafers

With snorkel

• N2 can fill in the space between

wafers faster

Basic Purge versus Advanced Snorkel Purge

High N2

Snorkel can help drive purge gas into the space between wafers

Low N2

Preliminary Door open Purge test results

with XCDA® 50 L/min per diffuser

POR Gen-2

Data for slot 13, front left

XCDA® is a trademark of Entegris, Inc.

Four Port vs. Two Port Door Off Purging

Slot 1

Slot 13

Slot 25

EBM Material FOUP for High End EBM Material FOUP for High End

ProcessesMaintain the purge results and extend queue time

EBM Material – Water Absorption Of Different

Polymer Materials

• Materials that can absorb

excessive amounts of water

(PC, PEI or PEEK™), will

heavily impact moisture

recovery in a FOUP 0.30

0.40

0.50

0.60

O A

bso

rpti

on

(%

)

H2O Absorption of Polymers

• As a result, for purge

application, constant or

frequent purge is required if

you want to keep the FOUP

environment dry

0.00

0.10

0.20

PEI PC PEEK/CF EBM

H2O

Ab

sorp

tio

n (

%)

Material

PEEK™ is a trademark of Victrex plc.

How EBM can help = low moisture and low AMC

• EBM FOUP + purge can effectively extend queue time due to:

– Moisture level can be maintained low (<15%) for more than 18 hrs after purge

– HF/HCl/AMC absorption/desorption is much less in EBM FOUP than PC FOUP

Queue time can be extended and defect level can be kept low

EBM desorbs much less HCl than PC

PC

EBM

Moisture

M200 SMIF pod updateM200 SMIF pod update

200 mm SMIF pods EBM and purge optionsStandard 200 SMIF pod developed in 1985 using PC material

M200 style SMIF pod

A200 style SMIF pod

Advanced EBM/CNT Advanced EBM/CNT

dome

EBM Amber dome

(M200 SMIF pod)

E200 purgeable SMIF

pod door

(EBM inner door)

Inlet Outlet

RH and Purge test setup

Results – POR (PC) vs. EBM SMIF pod

• Advanced (EBM)Entegris

Barrier Materials

• Purge options standard or

advanced diffuser

• Purge application using N2,

Summary contamination control solutions EBM material and purge

300 mm FOUP450 mm FOUP

• Purge application using N2,

CDA or XCDA

– Extend low moisture and low

AMC environment control

– Critical process steps/control

wafer environment/yield

– Proposed FOUP and pod

environment control solution

for your high end process 200 mm SMIF pod

Thank you for listeningThank you for listening