ferroelectric thin films vi - cambridge university...

FerroelectricThin Films VI

www.cambridge.org© in this web service Cambridge University Press

Cambridge University Press978-1-107-41348-1 - Materials Research Society Symposium Proceedings: Volume 493:Ferroelectric Thin Films VIEditors: Randolph Edward Treece, Robert E. Jones, Christopher M. Foster,Seshu B. Desu and In K. YooFrontmatterMore information

http://www.cambridge.org/9781107413481

http://www.cambridge.org


MATERIALS RESEARCH SOCIETYSYMPOSIUM PROCEEDINGS VOLUME 4 9 3

FerroelectricThin Films VI

Symposium held November 30-December 4, 1997, Boston, Massachusetts, U.S.A.

EDITORS:

Randolph Edward TreeceSuperconducting Core Technologies, Inc.

Golden, Colorado, U.S.A.

Robert E. JonesMotorola, Inc.

Austin, Texas, U.S.A.

Christopher M. FosterArgonne National Laboratory

Argonne, Illinois, U.S.A.

Seshu B. DesuVirginia Tech

Blacksburg, Virginia, U.S.A.

In K. YooSamsung Advanced Institute of Technology

Suwon, Kyongki, Korea

Materials Research SocietyWarrendale, Pennsylvania






cambridge university press Cambridge, New York, Melbourne, Madrid, Cape Town, Singapore, São Paulo, Delhi, Mexico City

Cambridge University Press32 Avenue of the Americas, New York ny 10013-2473, USA

Published in the United States of America by Cambridge University Press, New York

www.cambridge.orgInformation on this title: www.cambridge.org/9781107413481

Materials Research Society506 Keystone Drive, Warrendale, pa 15086http://www.mrs.org

© Materials Research Society 1998

This publication is in copyright. Subject to statutory exceptionand to the provisions of relevant collective licensing agreements, no reproduction of any part may take place without the written permission of Cambridge University Press.

This publication has been registered with Copyright Clearance Center, Inc.For further information please contact the Copyright Clearance Center,Salem, Massachusetts.

First published 1998 First paperback edition 2013

Single article reprints from this publication are available throughUniversity Microfilms Inc., 300 North Zeeb Road, Ann Arbor, mi 48106

CODEN: MRSPDH

isbn 978-1-107-41348-1 Paperback

Cambridge University Press has no responsibility for the persistence oraccuracy of URLs for external or third-party internet websites referred to inthis publication, and does not guarantee that any content on such websites is,or will remain, accurate or appropriate.






CONTENTS

Preface xiii

Acknowledgments xv

Materials Research Society Symposium Proceedings xvi

PARTI: HIGH PERMITTIVITY DRAM MATERIALS

Leakage Degradation in BST Dielectric Capacitors WithOxide and Metal Electrodes 3

n. Fukushima, K. Abe, M. Izuha, and T. Kawakubo

An Important Failure Mechanism in MOCVD (Ba,Sr)TiO3Thin Films: Resistance Degradation 9

C. Basceri, S.E. Lash, C.B. Parker, S.K. Streiffer, A.I. Kingon,M. Grossmann, S. Hoffmann, M. Schumacher, R. Waser,S. Bilodeau, R. Carl, P.C. Van Buskirk, and S.R. Summerfelt

Investigation of Dielectric Constant and Dispersion inBarium Strontium Titanate Capacitors 15

Sufi Zafar, Peir Chu, T. Remmel, Robert E. Jones, Bruce White,David Gentile, Bo Jiang, Bradley Melnick, Deborah Taylor,Peter Zurcher, and Sherry Gillespie

Stoichiometric Effects of Sputtered Barium StrontiumTitanate Films 21

B.A. Baumert, T-L. Tsai, h-li. Chang, T.P. Remmel, M.L. Kottke,P.L. Fejes, W. Chen, E.P. Ehlert, D.F. Sullivan, C.J. Tracy,and B.M. Melnick

Electrical and Microwave Properties of Mn-lmplanted(Ba,Sr)TiO3 Thin Films 27

J.D. Baniecki, R.B. Laibowitz, T.M. Shaw, P.R. Duncombe,D.A. neumayer, M. Copel, D.E. Kotecki, ti. Shen, and Q.Y. Ma

Microstructure Control of (Ba,Sr)TiO3 Films for Gigabit DRAM 33ti. Shen, D.E. Kotecki, R.J. Murphy, M. Zaitz, R.B. Laibowitz,T.M. Shaw, K.L. Saenger, J. Baniecki, G. Beitel, V. Klueppel,and H. Cerva

A Study on the Improvement of Characteristics of BST ThinFilms Fabricated on Iridium Electrode 39

Deok-Sin Kil, Byung-Il Lee, and Seung-Ki Joo

PART II: DOMAINS AND SIZE EFFECTS

Compositional Control of Ferroelectric Domain Structuresin Heteroepitaxial PLZT Thin Films 47

K.S. Lee, Y.M. Kang, and S. Baik






Nanoscale Investigation of Polarization Retention Loss inFerroelectric Thin Films Via Scanning Force Microscopy 53

A. Gruverman, S.A. Prakash, S. Aggarwal, R. Ramesh, O. Auciello,and H. Tokumoto

*The Impact of Domains on the Dielectric andElectromechanical Properties of Ferroelectric Thin Films 59

S. Trolier-McKinstry, P. Aungkavattana, F. Chu, J. Lacey, J-P. Maria,J.F. Shepard, Jr., T. Su, and F. Xu

High-Resolution Optical Microscopy of BaxSri.xTiO3 Films 69C. Hubert, J. Levy, A.C. Carter, W. Chang, J.M. Pond, J.S. tiorwitz,and D.B. Chrisey

Domain-Wall Pinning by Grain Boundaries During Electric-Field Poling of KNbO3 Thin Films 75

Venkatraman Gopalan and Rishi Raj

The Effects of Film Thickness and Texture on the High-and Low-Field Stress Response of Lead Zirconate TitanateThin Films 81

J.F. Shepard, Jr., F. Chu, B. Xu, and S. Trolier-McKinstry

Preparation and Characterization of BST Thin Films WithHybrid Bottom Electrodes 87

Joon-tlyung Ahn, Jeong-tJo Park, Won-Jae Lee, and tio-Gi Kim

Ferroelectric Properties and Crystal Structure ofYBa2Cu3O7/BaxSr(i_X)TiO3 Heterostructures 93

Ch. Schwan, F. Martin, G. Jakob, J.C. Martinez, and H. Adrian

Surface and Size Effects on the Ferroelectric PhaseTransition and Surface Polarization of Thin Films: MonteCarlo Simulations 99

J. Romero and L.F. Fonseca

Formation of Ultrasmooth Bi-Based Ferroelectric Films andTheir Size Effect on Dielectric Constant 105

M. Tabata, T. Yanagita, M. tiamada, and T. Kawai

Polydomain Structure of Epitaxial PbTiO3 Films on MgO I l lS.P. Alpay, A.S. Prakash, S. Aggarwal, R. Ramesh, A.L. Roytburd,P. Shuk, and M. Greenblatt

PART III: BARRIERS AND ELECTRODES

* Investigation of Etch Profiles in Etching of PZT and PtThin Films 119

Chee Won Chung, Inyong Song, and Jong Sig Lee

Invited Paper

VI






The Effect of RuO2/Pt Hybrid Bottom Electrode Structure onthe Microstructure and Ferroelectric Properties of Sol-GelDerived PZT Thin Films 131

Seung-Hyun Kim, J.G. Hong, J.C. Gunter, ti.Y. Lee, S.K. Streiffer,and Angus I. Kingon

Hillock Growth at the Surface of Pt/TiN Electrodes forFerroelectric Capacitors During Annealing in N2/O2Ambient 137

H. Miura, Y. Kumagai, and Y. Fujisaki

'Oxygen-Induced Inhibition of Noble Metal SilicideFormation: Implications for Electrode/Barrier StructuresUsed With Perovskite Materials 143

K.L. Saenger, A. Grill, and D.E. Kotecki

Composition and Electrode Effects on the ElectricalProperties of SrBi2Ta2O9 153

Darin T. Thomas, Norifumi Fujimura, S.K. Streiffer, and Angus I. Kingon

Effects of Sputtered Ir and lrO2 Electrodes on theProperties of PZT Thin Films Deposited by MOCVD 159

M. Shimizu, H. Fujisawa, S. tlyodo, S. Makashima, H. Mu, H. Okino,and T. Shiosaki

Dielectric Properties of Sputtered BST on Ir Electrodes 165B.E. White, Jr., Peir Y. Chu, Sufi Zafar, V. Balu, D. Gentile,Robert E. Jones, Bo Jiang, Bradley Melnick, Deborah Taylor,Peter Zurcher, and Sherry Gillespie

Microstructure Investigations and Structure-PropertyCorrelations in Ferroelectric Thin-Film Capacitors 171

H. Li, B. Yang, A. Dhote, S. Aggarwal, L. Salamanca-Riba,and R. Ramesh

Synthesis of Photodefinable RuO2 Precursors for ElectrodeContacts 177

E.J. Law and Y.H. Spooner

The Effects of the Addition of CF4, Cl2, and N2 to O2 ECRPlasma on the Etch Rate, Selectivity, and Etched Profile ofRuO2 Film 183

Eung-Jik Lee, Jong-Sam Kim, Jin-Woong Kim, Ki-Ho Baik,and Won-Jong Lee

Characterization of Highly Textured PZT Thin Films Grownon LaNiO3 Coated Si Substrates by MOCVD 189

CM. Lin, B.M. Yen, Haydn Chen, T.B. Wu, H.C. Kuo, and G.E. Stillman

Domain Structures of Epitaxial SrRuO3 Thin Films 195J.C. Jiang, X. Pan, and C.L. Chen

*lnvited Paper

vii






Ir Electrodes for Ferroelectric Capacitors 201Sung Won Jung, Ilhwan Bang, Jaegab Lee, and Jiyoung Kim

PART IV: Bi-LAYERED FERROELECTRICS

Crystallization Mechanism of Ferroelectric SBT Thin Films 209Yuji Ikeda, Katsuyuki Hironaka, and Chiharu Isobe

*(l-x)SrBi2Ta2O9-xBi3Ti(TayNbi..y)O9 Layered Structure SolidSolutions for Ferroelectric Random-Access MemoryDevices 215

P.C. Joshi, S.O. Ryu, S. Tirumala, and S.B. Desu

MOCVD of SrBi2Ta2O9 for Integrated FerroelectricCapacitors 225

Bryan C. Hendrix, Frank Hintermaier, Debra A. Desrochers,Jeffrey F. Roeder, Gautam Bhandah, Maggie Chappuis,Thomas H. Baum, Feter C. Van Buskirk, Christine Dehm, EIke Fritsch,Nikolas Magel, Wolfgang Honlein, and Carlos Mazure

Characterization of New SBT Sol System and Its Thin Filmon the Platinum Electrode for FRAM Application 231

YongSoo Choi, WooSik Kim, ChangEun Kim, WhanSik Yoo,BaeYeon Kim, and tianSang Song

A Thickness Dependent Study of SrBi2Nb2O9 Thin Films 237W. Perez, E. Ching-Prado, A. Reynes-Figueroa, R.S. Katiyar,D. Ravichandran, and A.S. Bhalla

Surface Microstructures of Ferroelectric SrBi2Ta2O9, BaTiO3,and Metallic SrRuO3 Epitaxial Thin Films 243

Q.D. Jiang, Z.J. Huang, C.L. Chen, A. Brazdeikis, P. Jin, H.H. Feng,A. Benneker, and C. W. Chu

Electronic Structure and Surface Properties of SrBi2Ta2O9

and Related Oxides 249J. Robertson and C. W. Chen

Crystallization and Electrical Properties of Bi4Ti3Oi2 FilmsDerived From Bismuth Acetate and Bismuth NitratePrecursor Solutions 255

Chang Jung Kim, C. W. Chung, and Kyu Sang Lee

Ferroelectric Thin Films of Bi-Containing LayeredPerovskites 261

Xiaofeng Du and I-Wei Chen

"Reversible and Irreversible Contributions to thePolarization in SrBi2Ta2O9 Ferroelectric Capacitors 267

O. Lohse, D. Bolten, M. Grossmann, R. Waser, W. Hartner,and G. Schindler

*lnvited Paper

VIII






PARTV: Pb-BASED FERROELECTRICS

An Optimized Process and Characterization of Pb(Zr,Ti)O3

Ferroelectric Capacitor for 1T/1C Ferroelectric RAM 281Dong-Won Shin, Soo-Ho Shin, Jin-Woo Lee, Hong-Bae Park,Yoon-Soo Chun, Mi-Hyang Lee, Dong-Jin Jung, Yoo-Sang Hwang,Bon-Jae Koo, Sun-Young Lee, and Kinam Kim

CMOS Compatible Integrated PZT Capacitors 287Joe T. Evans, Jr., Leonard L. Boyer, Robert I. Suizu, and Geri Veiasquez

"Nonvolatile, Reversible Writing of ElectronicNanostructures in Epitaxial Ferroelectric/MetallicOxide Heterostructures Using a Field Effect 291

C.ti. Ahn, T. Tybell, L. Antognazza, K. Char, R.ti. Hammond,M.R. Beasley, 0. Fischer, and J-M. Triscone

Retention Studies on Ferroelectric Media for High Data-Storage Application 299

IK. Yoo, B.M. Kim, D.S. Kim, and S.J. Park

Laser-Assisted Low-Temperature Processing of PZTThin Films 305

Yongfei Zhu, Jinsong Zhu, Y.J. Song, and S.B. Desu

Frequency Spectra of Fatigue of PZT and OtherFerroelectric Thin Films 311

Xiaofeng Du and I-Wei Chen

Suppression of the Tetragonal Distortion in Thin Pb(Zr,Ti)O3

Films Grown on MgO(OOl) 317ti.C. Kang, D.Y. Moh, J.tl. Je, and U.K. Kim

Seeded Epitaxial Growth of PbTiO3 Thin Films on (001)LaAIO3 Using the Chemical Solution Deposition Method 323

J.H. Kim and F.F. Lange

Large-Area PbZri.xTixO3 (PZT) Thin Films Deposited byMOCVD Processes 327

Tingkai Li, Elliot Hartford, Pete Zawadzki, and Richard A. Stall

Correlation Between In situ Optical Emission Spectroscopyin a Reactive O2/Ar rf Magnetron Sputtering Dischargeand PZT Thin Film Composition 333

F. Ayguavives, P. Aubert, B. Ea-Kim, and B. Agius

PART VI: MICROWAVE AND OPTICAL DEVICES

Microwave Tuning Quality and Power Handling of Voltage-Tunable Capacitors: Semiconductor VaractorsVersus Bai-xSrxTiO3 Films 341

D. Gait, T. Rivkina, and M. W. Cromar

*lnvited Paper






The Effects of High-Temperature Annealing andComposition on the Dielectric Properties of ThinFilms of BaxSrzTiO3 347

Adriaan C. Carter, James S. Horwitz, Douglas B. Chrisey,Jeffrey M. Pond, Steven W. Kirchoefer, Wontae Chang,and Patricia Loferski

Dielectric and Structural Properties of (100)KTai.xNbxO3Films Grown on MgO, LaAIO3> and SrTiO3 Substrates byPulsed Laser Deposition 353

Wontae Chang, Adriaan C. Carter, James S. Horwitz,Steven W. Kirchoefer, Jeffrey M. Pond, Kenneth S. Grabowski,and Douglas B. Chrisey

Crystallization of Amorphous Thin BST/MgO(001) FilmsGrown by rf Magnetron Sputtering 359

D.Y. Noh, ti.ti. Lee, J.ti. Je, and ti.K. Kim

Study of KTN Thin Films of Variable Composition Grown byPulsed Laser Deposition 365

F.E. Fernandez, M. Pumaroi, P. Marrero, E. Rodriguez,and H.A. Mourad

Epitaxial Lift-Off of Strontium Titanate Thin Films and theTemperature Dependence of the Low-FrequencyDielectric Properties of the Films 371

M.J. Dalberth, J.C. Price, and C.T. Rogers

The Growth of Nonlinear Optical Thin Films of KTai-xNbxO3

on GaAs by Pulsed Laser Deposition for Integrated Optics 377LA. Knauss, K.S. tiarshavardhan, tf.Y. Zhang, X.tt. Me, Y.ti. Shih,K.S. Grabowski, and D.L. Knies

PZT Electro-optic Waveguide Devices Fabricated bySolid-Phase Epitaxy 383

Keiichi Hashimoto, Shigetoshi Nakamura, tiiroaki Moriyama,Masao Watanabe, and Eisuke Osakabe

PART VII: MATERIALS FOR PIEZOELECTRIC MEMs

Process Optimization for Piezoelectric Films andCoatings 391

M. Sayer, L. Zou, B. Leclerc, M. Lukacs, T. Olding, andJ.fi. Schloss

Thickness Mode Resonance of PZT Coatings on aSubstrate 397

M. Lukacs, T. Olding, M. Sayer, and S. Sherrit

Antiferroelectric Thin Films for Decoupling Capacitor andMicroactuator Applications 403

Baomin Xu, Neelesh G. Pai, Paul Moses, and L. Eric Cross






Thickness Dependence of the Electrical Properties ofSol-Gel Derived Lead Zirconate Titanate Thin Films With(111) and (100) Texture 409

F. Chu, F. Xu, J. Shepard, Jr., and S. Trolier-McKinstry

The Influence of Film Thickness on the Magnitude andAging Behavior of the Transverse Piezoelectric Coefficient(d3i) of PZT Thin Films 415

J.F. Shepard, Jr., F. Chu, F.J. Moses, and S. Trolier-McKinstry

Deposition and Electrical Characterization of EpitaxialPb(Mg1/3Nb2/3)O3-PbTiO3 (70/30) Thin Films 421

J-P. Maria, Wes riackenberger, and S. Trolier-McKinstry

Measurement of Effective Longitudinal PiezoelectricCoefficient of Thin Films by Direct Piezoelectric Effect 427

F. Xu, F. Chu, J.F. Shepard, Jr., and S. Trolier-McKinstry

PZT/PVDF Composite for Actuator/Sensor Application 433W. Kowbel, X. Xia, J.C. Withers, M.J. Crocker, and B.K. Wada

Piezoelectric Properties of Sol-Gel Derived PZT Thin FilmsWith Various Zr/Ti Ratios 439

G. Teowee, K.C. McCarthy, F.S. McCarthy, D.G. Davis, Jr.,J.T. Dawley, B.J.J. Zelinski, and D.R. Uhlmann

Sol-Gel Derived Pb(Zn1/3Nb2/3)O3-PbTiO3 Thin Films 445G. Teowee, K.C. McCarthy, F.S. McCarthy, D.G. Davis, Jr.,J.T. Dawley, B.J.J. Zelinski, and D.R. Uhlrnann

PART VIII: NOVEL FERROELECTRIC DEVICES

Phase Transition and Pyroelectric Properties ofLa-Modified PbTiO3 Thin Films 453

Kenji Iijima and Koichi riiihara

Electrical Properties of MFS-FETs Using SrBi2Ta2O9 FilmsDirectly Grown on Si Substrates by Sol-Gel Method 459

E. Tokumitsu, G. Fujii, and ti. Ishiwara

Strontium Bismuth Tantalate-Based Ferroelectric Gate FieldEffect Transistor With Yttrium Oxide as the Buffer Layer 465

Myoung-flo him, T.S. Kalkur, and Yong-Tae Kim

Effects of Buffer Layer on the Fabrication andCharacteristics of Ferroelectric Thin Films 471

flan Wook Song, Joon Sung Lee, Dae-Weon Kim, Kwang Ho Kim,Tae-tiyun Sung, and Kwangsoo No

Structure and Physical Properties of B i ^ O ^ Thin FilmsPrepared by APMOCVD and RTA 477

ti. Wang, Z. Wang, S.X. Shang, and M. Wang






(Mn,Sb) Doped-PZT/YBci2Cu3O7-y Heterostructure for IRDetector Array 481

Y.Q. Xu, N.J. Wu, D. Liu, and A. Ignatiev

A Study on the Responsivity of Four-Layer PyroelectricSensors 487

Vladimir B. Samoilov, Seong Jun Kang, Dong tioon Chang,and Yung Sup Yoon

A Multi-Technique Analysis of MOCVD-Grown LeadLanthanum Titanate (Pbi-xLax)TiO3 Thin Films on QuartzSubstrates 493

ti.Y. Chen, J. Lin, K.L. Tan, Z.C. Feng, B.S. Kwak, and A. Erbil

Properties of PTO/YBCO Heterostructure on Bare SiCSubstrates 499

M. Duan, J. Linnros, C.S. Petersson, and K.V. Rao

MOCVD of Alkaline Earth Titanates for Integrated rfCapacitors 503

Q.T. Stauf, C. Seegel, R.K. Watts, and ti.M. O'Bryan

Orientation Effects on Pyroelectric Properties ofSolution-Derived Bismuth Titanate Films 509

Tran D. Khang and Relva C. Buchanan

Direct Wafer Bonding and Layer Transfer: An InnovativeWay for the Integration of Ferroelectric Oxides Into SiliconTechnology 517

M. Alexe, St. Senz, A. Pignolet, J.F. Scott, D. Hesse, and U. Qosele

Author Index 523

Subject Index 527

XII






PREFACE

This symposium was the sixth in a series of Materials Research Society(MRS) symposia on ferroelectric thin films. These have been a very well-received and attended series of symposia. There has been a steady increase,from the 1990 MRS Spring Meeting to the 1996 MRS Spring Meeting, in thenumber of papers submitted, number of symposium days, and in thenumber of papers presented. This year was no exception. We had recordnumbers of abstracts submitted (>180) and papers presented (>145). Oralpresentations covered all five days and poster presentations were present inall four evenings of the 1997 MRS Fall Meeting. The strong and increasinginterest in ferroelectric thin films, both domestic and foreign, indicates theworldwide importance of this class of materials.

The "Ferroelectric Thin Films VI" symposium presented a wide range oftopics spanning basic academic research to applied integration issues. Thesetopics covered fundamental materials studies, new growth methods, deviceand materials integration research, and developments in designing andgrowing new materials, all involving epitaxial, polycrystalline, and nano-crystalline ferroelectric thin films.

Since ULSI chip manufacturers are seriously considering incorporatingferroelectric DRAM technology into existing fabrication facilities, theindustrial interest and resulting research is causing an explosion in ferro-electrics. In addition, there continues to be growth in the development offerroelectric nonvolatile memories. Ferroelectrics span such a broad range ofproperties that this conference also covered very low-loss electro-opticalfilms, high-response pyroelectric materials, variable capacitance oxidescapable of tuning RF circuits, micromachines, and basic materials researchon all of the compounds that make these applications possible.

This symposium proceedings presents the latest technical information onferroelectric thin films from academia, government organizations, andindustry. It highlights advancements made during the past 18 months, sincethe last symposium on ferroelectric thin films was held during the 1996 MRSSpring Meeting, and provides insight into the current trends emerging for thisexciting technology.

The papers in this proceedings volume were presented at the symposiumon ferroelectric thin films, held during the 1997 MRS Fall Meeting in Boston,Massachusetts, on December 1-5, 1997.

Randolph Edward TreeceRobert E. JonesChristopher M. FosterSeshu B. DesuIn K. Yoo

March 1998

xiii






ACKNOWLEDGMENTS

The symposium chairs are pleased to acknowledge the contributing andinvited authors for the outstanding quality of their presentations and theircontributions to the symposium proceedings.

In addition, the chairs wish to thank the session chairs for their efforts inoverseeing the sessions and guiding subsequent discussions.

The biggest "thanks" go to the manuscript reviewers who tirelesslypoured over the submitted papers. The high quality of these proceedings isdue in large part to their efforts.

The chairs also wish to express their appreciation to the followingorganizations which provided financial support enabling us to present the"Ferroelectric Thin Films VI" symposium:

Blake Industries, Inc.Inorgtech

MKS Instruments, Inc.Motorola, Inc.

Samsung Advanced Institute of Technology

The chairs acknowledge the efforts of Evelyn Cribbs of SCT, whosesignificant efforts to pull together the reviewers' comments, correctedmanuscripts, and tables, made this volume possible.

A special thanks is reserved for the Materials Research Society staff, aswell as the 1997 MRS Fall Meeting Chairs for the development of anotheroutstanding conference.

XV






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 467—Amorphous and Microcrystalline Silicon Technology—1997, M. Hack,E.A. Schiff, S. Wagner, R. Schropp, I. Shimizu, 1997, ISBN: 1-55899-371-1

Volume 468— Gallium nitride and Related Materials II, C.R. Abernathy, H. Amano,J.C. Zolper, 1997, ISBN: 1-55899-372-X

Volume 469— Defects and Diffusion in Silicon Processing, T. Diaz de la Rubia, S. Coffa,P.A. Stolk, C.S. Rafferty, 1997, ISBN: 1-55899-373-8

Volume 470— Rapid Thermal and Integrated Processing VI, T.J. Riley, J.C. Qelpey,F. Roozeboom, S. Saito, 1998, ISBN: 1-55899-374-6

Volume 471— Flat Panel Display Materials III, R.T. Fulks, Q.N. Parsons, D.E. Slobodin,T.H. Yuzuriha, 1997, ISBN: 1-55899-375-4

Volume 472— Polycrystalline Thin Films—Structure, Texture, Properties and Applications III,S.M. Yalisove, B.L. Adams, J.S. Im, Y. Zhu, F-R. Chen, 1997, ISBN: 1-55899-376-2

Volume 473— Materials Reliability in Microelectronics VII, J.J. Clement, R.R. Keller,K.S. Krisch, J.E. Sanchez, Jr., Z. Suo, 1997, ISBN: 1-55899-377-0

Volume 474— Epitaxial Oxide Thin Films III, D.Q. Schlom, C-B. Eom, M.E. Hawley,CM. Foster, J.S. Speck, 1997, ISBN: 1-55899-378-9

Volume 475— Magnetic Ultrathin Films, Multilayers and Surfaces—1997, J.Q. Tobin,D.D. Chambliss, D. Kubinski, K. Barmak, P. Dederichs, W.J.M. de Jonge,T. Katayama, A. Schuhl, 1997, ISBN: 1-55899-379-7

Volume 476— Low-Dielectric Constant Materials III, C. Case, P. Kohl, T. Kikkawa, W.W. Lee,1998, ISBN: 1-55899-380-0

Volume 477— Science and Technology of Semiconductor Surface Preparation, Q.S. Higashi,M. Hirose, S. Raghavan, S. Verhaverbeke, 1997, ISBN: 1-55899-381-9

Volume 478— Thermoelectric Materials—New Directions and Approaches, T.M. Tritt,M.Q. Kanatzidis, H.B. Lyon, Jr., Q.D. Mahan, 1997, ISBN: 1-55899-382-7

Volume 479— Materials for Optical Limiting II, R. Sutherland, R. Pachter, P. Hood, D. Hagan,K. Lewis, J. Perry, 1997, ISBN: 1-55899- 383-5

Volume 480— Specimen Preparation for Transmission Electron Microscopy of Materials IV,R.M. Anderson, S.D. Walck, 1997, ISBN: 1-55899-384-3

Volume 481— Phase Transformation and Systems Driven Far From Equilibrium, E. Ma,P. Bellon, M. Atzmon, R. Trivedi, 1998, ISBN: 1-55899-386-X

Volume 482— Nitride Semiconductors, F.A. Ponce, S.P. DenBaars, B.K. Meyer, S. Nakamura,S. Strite, 1998, ISBN: 1-55899-387-8

Volume 483— Power Semiconductor Materials and Devices, S.J. Pearton, R.J. Shul,E. Wolfgang, F. Ren, S. Tenconi, 1998, ISBN: 1-55899-388-6

Volume 484— Infrared Applications of Semiconductors II, S. Sivananthan, M.O. Manasreh,R.H. Miles, D.L. McDaniel, Jr., 1998, ISBN: 1-55899-389-4

Volume 485— Thin-Film Structures for Photovoltaics, E.D. Jones, R. Noufi, B.L. Sopori,J. Kalejs, 1998, ISBN: 1-55899-390-8

Volume 486— Materials and Devices for Silicon-Based Optoelectronics, J.E. Cunningham,S. Coffa, A. Polman, R. Soref, 1998, ISBN: 1-55899-391-6

Volume 487— Semiconductors for Room-Temperature Radiation Detector Applications II,R.B. James, T.E. Schlesinger, P. Siffert, M. Cuzin, M. Squillante, W. Dusi,1998, ISBN: 1-55899-392-4






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 488— Electrical, Optical, and Magnetic Properties of Organic Solid-State MaterialsIV, J.R. Reynolds, A. K-Y. Jen, L.R. Dalton, M.F. Rubner, L.Y. Chiang, 1998,ISBN: 1-55899-393-2

Volume 489— Materials Science of the Cell, B. Mulder, V. Vogel, C. Schmidt, 1998,ISBN: 1-55899-394-0

Volume 490— Semiconductor Process and Device Performance Modeling, J.S. Nelson,CD. Wilson, S.T. Dunham, 1998, ISBN: 1-55899-395-9

Volume 491— Tight-Binding Approach to Computational Materials Science, P.E.A. Turchi,A. Qonis, L. Colombo, 1998, ISBN: 1-55899-396-7

Volume 492— Microscopic Simulation of Interfacial Phenomena in Solids and Liquids,S.R. Phillpot, P.D. Bristowe, D.Q. Stroud, J.R. Smith, 1998, ISBN: 1-55899-397-5

Volume 493— Ferroelectric Thin Films VI, R.E. Treece, R.E. Jones, S.B. Desu, CM. Foster,I.K. Yoo, 1998, ISBN: 1-55899-398-3

Volume 494— Science and Technology of Magnetic Oxides, M. Hundley, J. Nickel, R. Ramesh,Y. Tokura, 1998, ISBN: 1-55899-399-1

Volume 495— Chemical Aspects of Electronic Ceramics Processing, P.N. Kumta, A.F. Hepp,D.N. Beach, J.J. Sullivan, B. Arkles, 1998, ISBN: 1-55899-400-9

Volume 496— Materials for Electrochemical Energy Storage and Conversion II—Batteries,Capacitors and Fuel Cells, D.S. Qinley, D.H. Doughty, T. Takamura, Z. Zhang,B. Scrosati, 1998, ISBN: 1-55899-401-7

Volume 497— Recent Advances in Catalytic Materials, N.M. Rodriguez, S.L. Soled, J. Hrbek,1998, ISBN: 1-55899-402-5

Volume 498— Covalently Bonded Disordered Thin-Film Materials, M.P. Siegal, J.E. Jaskie,W. Milne, D. McKenzie, 1998, ISBN: 1-55899-403-3

Volume 499— High-Pressure Materials Research, R.M. Wentzocovitch, R.J. Hemley,W.J. Nellis, P.Y. Yu, 1998, ISBN: 1-55899-404-1

Volume 500— Electrically Based Microstructural Characterization II, R.A. Qerhardt, M.A. Alim,S.R.Taylor, 1998, ISBN: 1-55899-405-X

Volume 501— Surface-Controlled Nanoscale Materials for High-Added-Value Applications,K.E. Qonsalves, M-I. Baraton, J.X. Chen, J.A. Akkara, 1998, ISBN: 1-55899-406-8

Volume 502— In Situ Process Diagnostics and Intelligent Materials Processing,P.A. Rosenthal, W.M. Duncan, J.A. Woollam, 1998, ISBN: 1-55899-407-6

Volume 503— Nondestructive Characterization of Materials in Aging Systems, R.L. Crane,S.P. Shah, R. Gilmore, J.D. Achenbach, P.T. Khuri-Yakub, T.E. Matikas, 1998,ISBN: 1-55899-408-4

Volume 504— Atomistic Mechanisms in Beam Synthesis and Irradiation of Materials,J.C Barbour, S. Roorda, D. Ila, 1998, ISBN: 1-55899-409-2

Volume 505— Thin-Films—Stresses and Mechanical Properties VII, R.C. Cammarata,E.P. Busso, M. Nastasi, W.C Oliver, 1998, ISBN: 1-55899-410-6

Prior Materials Research Society Symposium Proceedings available by contacting Materials Research Society






ferroelectric thin films vi - cambridge university...

Documents