fab - step 1
DESCRIPTION
confidential. Fab - Step 1. Take SOI Wafer. Si. SiO2 – 2 um. Side view. Si substrate. Top view. confidential. Fab – Step 2. Grow thermal oxide. Si. SiO2 – 2 um. Side view. Si substrate. Top view. confidential. Fab – Step 3. Dry etch thermal oxide from the front of the wafer. - PowerPoint PPT PresentationTRANSCRIPT
Fab - Step 1
Take SOI Wafer
Top view
Side viewSi substrate
SiO2 – 2 um
Si
confidential
Fab – Step 2
Grow thermal oxide
Top view
Side viewSi substrate
SiO2 – 2 um
Si
confidential
Fab – Step 3
Dry etch thermal oxide from the front of the wafer
Top view
Side viewSi substrate
SiO2 – 2 um
Si
confidential
Fab – Step 4
Deposit AlN
Top view
Side view
AlN
Si substrate
SiO2 – 2 um
Si
confidential
Fab – Step 5
Etch AlN to define the structure – Mask 1
Top view
Side view
AlN
Si substrate
SiO2 – 2 um
Si
confidential
Fab – Step 6
Deposit Pt
Top view
Side view
Pt
Si substrate
SiO2 – 2 um
Si
confidential
Fab – Step 7
Etch Pt – Mask 2
Top view
Side view
+ Q
- Q
+/- Q
Si substrate
SiO2 – 2 um
Si
confidential
Fab – Step 8
Etch Si to define the structure – Mask 3
Top view
Side view
+ Q
- Q
+/- Q
Si substrate
SiO2 – 2 um
Si
confidential
Fab – Step 9
Etch buried oxide to define the structure – Mask 3
Top view
Side view
+ Q
- Q
+/- Q
Si substrate
SiO2 – 2 um
Si
confidential
Fab – Step 10
Spin coat protective photoresist and bake it
Top view
Side view
Photoresist
+ Q
- Q
+/- Q
Si substrate
SiO2 – 2 um
Si
confidential
Fab – Step 11
Pattern back oxide to be used as hard mask for back side etch – Mask 4
Top view
Side view
+ Q
- Q
+/- Q
Photoresist
Si substrate
SiO2 – 2 um
Si
confidential
Fab – Step 12
Back side etch of Si – Mask 4
Top view
Side view
+ Q
- Q
+/- Q
Photoresist
Si substrate
SiO2 – 2 um
Si
confidential
Fab – Step 13
Strip photoresist
Top view
Side view
+ Q
- Q
+/- Q
AnchorSi substrate
SiO2 – 2 um
Si
confidential